IXFN100N50Q3 Datasheet by IXYS

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© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 500 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 82 A
IDM TC= 25°C, Pulse Width Limited by TJM 300 A
IATC= 25°C 100 A
EAS TC= 25°C5J
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
PDTC= 25°C 960 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~
IISOL 1mA, t = 1s 3000 V~
MdMounting Torque for Base Plate 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 500 V
VGS(th) VDS = VGS, ID = 8mA 3.5 6.5 V
IGSS VGS = ±30V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 2.5 mA
RDS(on) VGS = 10V, ID = 50A, Note 1 49 mΩ
HiperFETTM
Power MOSFET
Q3-Class
IXFN100N50Q3 VDSS = 500V
ID25 = 82A
RDS(on)
49mΩΩ
ΩΩ
Ω
trr
250ns
DS100308(03/11)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
zInternational Standard Package
zLow Intrinsic Gate Resistance
zminiBLOC with Aluminum Nitride
Isolation
zLow Package Inductance
zFast Intrinsic Rectifier
zLow RDS(on) and QG
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zTemperature and Lighting Controls
Advance Technical Information
miniBLOC
E153432
G
D
S
S
G = Gate D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
IXFN100N50Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 50A, Note 1 40 65 S
Ciss 13.8 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1690 pF
Crss 177 pF
RGi Gate Input Resistance 0.12 Ω
td(on) 40 ns
tr 20 ns
td(off) 50 ns
tf 15 ns
Qg(on) 255 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 50A 110 nC
Qgd 115 nC
RthJC 0.13 °C/W
RthCS 0.05 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 100 A
ISM Repetitive, Pulse Width Limited by TJM 400 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 3.5 μC
IRM 30.0 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RG = 0.5Ω (External)
IF = 50A, -di/dt = 200A/μs
VR = 100V, VGS = 0V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
an 82552 ‘ imam $.35 ‘ 2 as 04 m 2n 5n VDS - les $25592 ‘ £32m © 2011 \XVS CORPOHA‘HON‘ Au ngms Resewed
© 2011 IXYS CORPORATION, All Rights Reserved
IXFN100N50Q3
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8
V
7
V
6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7
V
9
V
8
V
6
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
90
100
01234567891011
V
DS
- Volts
I
D
- Amperes
6
V
7V
5V
V
GS
= 10V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 50A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 100A
I
D
= 50A
Fig. 5. R
DS(on)
Normalized to I
D
= 50A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
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IXFN100N50Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
- 40ºC
25ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
0 20 40 60 80 100 120 140
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
V
SD
- Volts
I
S
- Amperes
T
J
= 12C
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 50A
I
G
= 10mA
Fig. 11. Capacitance
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
10 100 1,000
VDS - Volts
ID - Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
R
DS(on)
Limit
250µs
© 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_100N50Q3(Q9)02-24-11
IXFN100N50Q3
Fig. 13. Maximum Transient Thermal Impedance
0.0001
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS A Lillelluse Tecnnumgy
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