AOT260L/AOB260L Datasheet by Alpha & Omega Semiconductor Inc.

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ALPH! l: OMEGA SEMICONDUCTOR
AOT260L/AOB260L
60V
N-Channel MOSFET
General Description Product Summary
VDS
ID (at VGS=10V) 140A
RDS(ON) (at VGS=10V) < 2.5mW
RDS(ON) (at VGS =6V) < 2.9mW
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RqJC
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient A D
0.35
65
0.45
Power Dissipation A
W
TA=70°C
330
1.2
TA=25°C
Continuous Drain
Current
819
20
128
Avalanche energy L=0.1mH C
W
A
TA=70°C
500
Pulsed Drain Current C
Continuous Drain
Current G
140
110
TC=25°C
TC=100°C
Drain-Source Voltage
60
The AOT(B)260L uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body
diode.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
60V
mJ
Avalanche Current C
16
A
V
±2 0
Gate-Source Voltage
A
TA=25°C
°C
Thermal Characteristics
Units
Maximum Junction-to-Ambient A
°C/W
12
54
15
Parameter
Typ
Max
TC=25°C
1.9
165
TC=100°C
Junction and Storage Temperature Range
-55 to 175
Power Dissipation B
G
D
S
TO220
Top View Bottom View
G
G
S
D
D
S
D
D
TO-263
D2PAK
Top View
Bottom View
D
D
S
G
G
S
AOB260L
AOT260L
Rev.2.0 : November 2013 www.aosmd.com Page 1 of 6
u , 0A dth=500AJ s
Symbol Min Typ Max Units
BVDSS 60 V
VDS=60V, VGS=0V 1
TJ=55°C 5
IGSS 100 nA
VGS(th) Gate Threshold Voltage 2.2 2.7 3.2 V
ID(ON) 500 A
2 2.5
TJ=125°C 3.1 3.9
2.2 2.9
mW
1.7 2.2
mW
1.9 2.5
mW
gFS 68 S
VSD 0.65 1 V
VSD 0.85 1.3 V
IS140 A
Ciss 9400 11800 14200 pF
Coss 1090 1360 1770 pF
Crss 32 40 68 pF
Rg0.5 1 1.5 W
Qg(10V) 120 150 180 nC
Qgs 28 40 52 nC
Qgd 915 25 nC
tD(on) 30 ns
tr27 ns
tD(off) 74 ns
tf12 ns
trr 22 32 42 ns
Qrr 140 200 260 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Diode Forward Voltage
IS=75A,VGS=0V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
RDS(ON)
Static Drain-Source On-Resistance
VGS=6V, ID=20A
TO263
Diode Forward Voltage
IS=1A,VGS=0V
VDS=5V, ID=20A
VGS=10V, ID=20A
TO263
TO220
Forward Transconductance
VGS=6V, ID=20A
TO220
Drain-Source Breakdown Voltage
On state drain current
ID=250mA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=20A
mW
Total Gate Charge
VGS=10V, VDS=30V, ID=20A
Gate Source Charge
Gate Drain Charge
Turn-Off DelayTime
mA
VDS=VGS ID=250mA
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Body Diode Reverse Recovery Charge
IF=20A, dI/dt=500A/ms
Turn-On Rise Time
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/ms
VGS=10V, VDS=30V, RL=1.5W,
RGEN=3W
Turn-Off Fall Time
Maximum Body-Diode Continuous CurrentG
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Reverse Transfer Capacitance
VGS=0V, VDS=30V, f=1MHz
SWITCHING PARAMETERS
Gate resistance
f=1MHz
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
Rev.2.0 : November 2013 www.aosmd.com Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
20
40
60
80
100
2 2.5 3 3.5 4 4.5 5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
2
4
6
0 5 10 15 20 25 30
RDS(ON) (mW)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS (A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=6V
ID=20A
VGS=10V
ID=20A
0
1
2
3
4
5
2 4 6 8 10
RDS(ON) (mW)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
VDS=5V
VGS=6V
VGS=10V
ID=20A
25°C
125°C
0
20
40
60
80
100
0 1 2 3 4 5
ID (A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4V
6V
10V
Vgs=3.5V
Rev.2.0 : November 2013 www.aosmd.com Page 3 of 6
:5 =19.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
2
4
6
8
10
0 40 80 120 160
VGS (Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
3000
6000
9000
12000
15000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
200
300
400
500
600
700
800
900
1000
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
ZqJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Coss
Crss
VDS=30V
ID=20A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZqJC.RqJC
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TC=25°C
10ms
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID (Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10ms
10ms
1ms
DC
RDS(ON)
TJ(Max)=175°C
100ms
RqJC=0.45°C/W
Rev.2.0 : November 2013 www.aosmd.com Page 4 of 6
HHIMI
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100 1000
ZqJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZqJA.RqJA
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
100
200
300
400
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°C)
Figure 13: Power De-rating (Note F)
0
30
60
90
120
150
0 25 50 75 100 125 150 175
Current rating ID(A)
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
10
100
1000
0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
TA=25°C
RqJA=65°C/W
10
100
1000
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA (ms)
Figure 12: Single Pulse Avalanche capability (Note
C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
Rev.2.0 : November 2013 www.aosmd.com Page 5 of 6
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
ton
td(off) tf
toff
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs -
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
AR
AR
trr
Rev.2.0 : November 2013 www.aosmd.com Page 6 of 6

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