Mosfets Prod Guide Datasheet by Toshiba Semiconductor and Storage

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- TO 5 H I BA Leading Innovation )) PRODUCT GUIDE MOSFETS SEMICONDUCTOR
PRODUCT GUIDE
MOSFETs
2009-9
http://www.semicon.toshiba.co.jp/eng
SEMICONDUCTOR
SEMICONDUCTORSEMICONDUCTOR
1 Features and Structures .......................................................................3
2
Toshiba’s MOSFET Product Lines and Part Numbering Schemes
........
4
2-1 MOSFET Product Lines ...................................................................................4
2-2 Part Numbering Schemes................................................................................5
3 Selection Guide (By Absolute Maximum Ratings) .............................6
4 Low-VDSS MOSFETs (in Small SMD Packages) .................................16
4-1 Packaging Options .........................................................................................16
• SSM Series
TPC Series
4-2 Application Examples and Block Diagrams....................................................17
• Cell Phone (Power Supply Circuit)
• Notebook PC (Power Supply Circuit)
• Lithium-Ion Secondary Battery (Battery Protection Circuits)
• Motor Driver (Power Driver Circuit)
4-3 Low-VDSS MOSFET Roadmaps .....................................................................19
• Roadmap for Trench MOSFETs
• Package Options
4-4 Low-VDSS, High-Speed MOSFETs .................................................................21
• Synchronous Rectification DC-DC Converters
– Block Diagram, Timing Chart and Power Loss Factors
Summary Results of Power Loss Simulation and Key Parameters for MOSFETs
Efficiency Improvement by Thermally Enhanced Package and New Process Technology
– MOSBD (MOSFET with SBD)
• High-Speed MOSFET Offerings
4-5 Low-VDSS, Low-RDS(ON) MOSFETs (for Lithium-Ion Battery Protection).........26
• Lithium-Ion Battery Protection Circuit Trend
• MOSFET Roadmap
• Low-ON-resistance N-Channel Power MOSFETs
• Low-ON-resistance P-Channel Power MOSFETs
4-6 Semi-Power MOSFET Offerings ....................................................................28
• Semi-Power P-Channel Single MOSFETs
• Semi-Power N-Channel Single MOSFETs
• Semi-Power Dual MOSFETs
• MOSFET with a Schottky Barrier Diode
VS-6 Series … [Part Number: TPC6xxx]
VS-8 Series … [Part Number: TPCF8xxx]
• PS-8 Series … [Part Number: TPCP8xxx]
• Chip LGA Series ... [Part Number: TPCL4xxx]
• STP2 Series ... [Part Number: TPCT4xxx]
TSON Advance Series … [Part Number: TPCC8xxx]
TSSOP Advance Series … [Part Number: TPCM8xxx]
• SOP-8 Series … [Part Number: TPC8xxx]
• SOP Advance Series … [Part Number: TPCA8xxx]
• DPAK Series ... [Part Number: TKxxPxxxM1]
4-7 Standard MOSFET Series (ID < 500 mA).......................................................36
Single MOSFETs
Dual MOSFETs
5 Low-VDSS, High-Qg MOSFETs .............................................................37
5-1 TO-220SM(W) Series.....................................................................................37
5-2 U-MOS (Trench Type) Series .........................................................................38
5-3 U-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V)............39
6 Mid- and High-VDSS MOSFETs .............................................................40
6-1 π-MOSVII Series (VDSS = 450 V to 650 V) .....................................................40
6-2 Super-Junction DTMOS Series (VDSS = 600 V, 650 V)...................................41
6-3 High-speed π-MOS Series (VDSS = 450 V to 600 V).......................................42
6-4 π-MOS Series.................................................................................................43
7 MOSFET Part Numbers........................................................................46
7-1 Alphanumeric Index of Part Numbers ............................................................46
8 Product Obsolescence........................................................................53
8-1 End-of-Life Products ......................................................................................53
9 Packaging .............................................................................................55
9-1 Compact Surface-Mount Packages................................................................55
9-2 Through-Hole Packages.................................................................................66
CONTENTS
Toshiba’s MOSFET devices
meet the needs of a wide range
of ultra-high-density applications.
2
Features and Structures
1
Trench Structure
Gate
Drain
n+
n+
PP
n+
n
Source
Gate
Drain
n+
n+
PP
n+
n
Source
Double-Diffusion Structure
Super-Junction Structure
Gate
Drain
n+
n
Source
PP
n+n+
Toshiba MOSFETs have the following additional features:
Structures of Toshiba MOSFETs
1) No carrier storage effect; superior frequency and switching characteristics
2) Rugged and no current concentration
3) Voltage-controlled device, hence low drive power
4) Easy parallel connection
1) Guaranteed avalanche capability................. Allows an absorber circuit to be simplified
2) Improved functioning of built-in diodes ........ Enhanced circuit design flexibility
3) High ruggedness .......................................... Increased margin for circuit design
4) High-speed switching ................................... Higher speed in end-product’s operation
5) Low R(DS)ON ................................................... Reduced end-product’s power consumption
6) Smaller packages ......................................... Reduced end-product size
7) Low drive loss ............................................... Reduced end product’s power
π-MOS
Toshiba Power MOSFETs use a double-diffusion MOS (D-MOS) structure, which
produces high-withstand voltage, to form channels. This structure is especially well
suited to high-withstand voltage and high-current devices.
A high level of integration yields a high-performance Power MOSFET with low
ON-resistance and low power loss.
U-MOS
Higher channel density is achieved by connecting channels vertically to form a
U-groove at the gate region, a structure that yields a lower ON-resistance than
other MOSFET structures.
DTMOS
The super-junction structure, which has P-type pillar layers as shown left,
realizes high withstand voltage and ON-resistance lower than the conventional
theoretical limit of silicon.
3
Applications
Switching power supplies AC adapters
Motor drivers
The super-junction DTMOS Series achieves low ON-resistance and low gate charge
(Qg) due to the use of the latest super-junction structure.
Applications
Switching power supplies AC adapters
Applications
Motor drivers Solenoids and lamp drivers
The new High-Speed π-MOS Series achieves higher switching speed than the
well-proven π-MOS Series. Two series are available: high-speed switching series
and high-speed diode series.
Applications
Inverters Switching power supplies
Motor drivers AC adapters
Applications
Switching power supplies AC adapters
Motor drivers
Fabricated using a trench technology, the U-MOS Series is ideal for synchronous
rectification on the secondary side of power supply circuits.
The latest addition to the π-MOS portfolio, the π-MOSVII Series offers reduced
capacitances due to optimized chip design and is available with a greatly wider
range of electrical characteristics.
The TO-220SM package, which uses Cu connectors and a wide source terminal,
realizes low ON-resistance and a high current-carrying capability.
High integration is achieved using a trench technology. Low-voltage drive (VGS = 4 V)
is possible due to ultra-low ON-resistance.
Applications
Lithium-ion secondary battery protection circuits
Notebook PCs Portable electronic devices
DC-DC converters
The SOP and TSON Series are compact and thin, and require only a small mounting area.
They are suitable for lithium-ion secondary battery protection circuits and notebook PCs.
Applications
Lithium-ion secondary battery protection circuits
The LGA and STP Series are housed in an ultra-small and thin package and are
suitable for use in lithium-ion secondary battery protection circuits in various portable
electronic devices.
Applications
Cell phones Notebook PCs
Portable electronic devices
Very compact and thin, the VS and PS Series are suitable for use in various
electronic devices.
Applications
Motor drivers Switching power supplies
Very compact and thin, the SSM Series is suitable for use in various electronic devices.
The SSM Series is available in a wide range of packages and features low voltage drive.
Applications
Cell phones Notebook PCs
Portable electronic devices Small-signal switching
2-1 MOSFET Product Lines
VS and PS Series (VDSS = 12 V to 40 V)
SSM Series (VDSS = 12 V to 60 V)
Chip LGA and STP Series (VDSS = 20 V to 30 V)
SOP and TSON Series (VDSS = 20 V to 250 V)
TO-220SM(W) Series (VDSS = 40 V to 150 V)
Low-VDSS, High-Qg U-MOS Series (VDSS = 40 V to 100 V)
U-MOS Series for Synchronous Rectification (V
DSS
= 60 V to 150 V)
New π-MOSVII Series (VDSS = 450 V to 650 V)
High-Speed π-MOS Series (VDSS = 450 V to 600 V)
Super-Junction DTMOS Series (VDSS = 600, 650 V)
Toshiba’s MOSFET Product Lines and Part Numbering
2
4
SSM3 K101 TU b TPCM8 0 01 -H TK 55 A 10 J1 23K ——'[—[ ‘E __ T _I: _|:
Small-Signal MOSFET (SSM) Series
SSM 3 K 101 TU
Multi-Pin Series
Serial number of the products
0: N-channel, single
1: P-channel, single
2: N-channel, dual
3: P-channel, dual
4: N-channel and P-channel, dual
A: N-channel and SBD
B: P-channel and SBD
J: P-channel and NPN
TPCM8 0 01 -H
TPC6: VS-6 Series
TPCF8: VS-8 Series
TPCP8: PS-8 Series
TPCC8: TSON Advance Series
TPCS8: TSSOP-8 Series
TPCM8: TSSOP Advance Series
TPC8: SOP-8 Series
TPCA8: SOP Advance Series
TPCT4: STP Series
TPCL4: Chip LGA
H: High-speed type
None: Low-ON-resistance type
New Series
Additional information
1: Low-capacitance type
3: Low-ON-resistance type
5: Fast body diode type
Voltage: 10% of the VDSS
Current rating
TK: N-channel
TJ: P-channel
Package
A: TO-220SIS
D: TO-220(W)
F: TO-220SM(W)
J: TO-3P(N)
X: TFP
P: DPAK
Q: New PW-Mold2
Series
C: π-MOSVI
D: π-MOSVII
J: U-MOSIII
M: U-MOSVI
K: U-MOSIV
T: DTMOSI
U: DTMOSII
TK 55 A 10 J 1
Conventional Series
N-channel MOS
P-channel MOS
2SK ✽✽✽✽
2SJ ✽✽✽✽
2-2 Part Numbering Schemes
Package
<4-pin><3-pin> <6-pin>
F: S-Mini
FU: USM
FS: SSM
FV: VESM
T: TSM
TU: UFM
CT: CST3
CTB: CST3B
CT: CST4
<5-pin>
F: SMV
FU: USV
FE: ESV
TU: UFV
FU: US6
FE: ES6
TU: UF6
CTD: CST6D
Serial number of the products
Pin count
Small-Signal MOSFET
Polarity and internal configuration
K: N-channel, single
J: P-channel, single
N: N-channel, dual
P: P-channel, dual
L: N-channel and P-channel (dual)
E: N-channel and P-channel
(pre-wired as a load switch)
H: N-channel and SBD
G: P-channel and SBD
Schemes
5
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Legend
V
DSS
(V)
I
D
(A)
20 24 30 40 50 60 100
150
180 200 250 400 450 500 525 550 600 650
12
0.5
0.65
0.72
0.77
0.8
0.18
0.2
0.25
0.33
0.4
0.05
0.1
0.5
0.65
0.72
0.77
0.8
0.18
0.2
0.25
0.33
0.4
0.05
0.1
V
DSS
(V)
I
D
(A)
2SK3302 (18)
2SK2998 (20)
2SK3471 (18)
2SJ343(50)
SSM5P16FE(45)
SSM3K35FS(20)
SSM6L35FE(20)
SSM6N35FE(20)
SSM6L35FU(20)
SSM6N35FU(20)
SSM3K35CT(20)
SSM3K35MFV(20)
2SJ344(50)
SSM3K04FU(12)
SSM5P15FE(32)
SSM3K44FS(7)
SSM3K44MFV(7)
SSM6N44FU(7)
SSM6N44FE(7)
SSM5N15FE(7)
SSM6P15FE(32)
SSM6N15FE(7)
SSM5P15FU(32)
SSM5N15FU(7)
SSM6P15FU(32)
SSM3J15CT(32)
SSM3K17FU(40)
SSM6N17FU(40)
SSM3K15CT(7)
SSM3J15FV(32)
SSM3K15FV(7)
SSM3J15FS(32)
SSM3K15FS(7)
SSM3J15FU(32)
SSM3K15FU(7)
SSM3J15F(32)
SSM3K15F(7)
SSM3K16FU(15)
SSM3J16FU(45)
SSM3K04FS(12)
SSM3K16FS(15)
SSM3J16FS(45)
SSM3J35FS(44)
SSM3K03FV(12)
SSM3K04FV(12)
SSM3K16FV(15)
SSM3J16FV(45)
SSM3J35MFV(44)
SSM3K16CT(15)
SSM3J16CT(45)
SSM3J35CT(44)SSM6N15FU(7)
SSM6N16FU(15)
SSM6P16FU(45)
SSM6P35FU(44)
SSM6N03FE(12)
SSM6N16FE(15)
SSM6P16FE(45)
SSM6L16FE(15)
SSM6P35FE(45)
SSM5N16FU(15)
SSM5P16FU(45)
SSM5N03FE(12)
SSM5N16FE(15)
SSM6N7002FU(3.3)
SSM6N37CTD(5.6)
SSM3J36TU(3.6)
SSM6P36
FE
(3.6)
SSM6L05FU(1.2)
SSM6L09FU(1.2)
SSM3K09FU(1.2)
SSM6N09FU(1.2)
SSM5N05FU(1.2)
SSM4K27CT(0.205)
SSM6L36FE(1.52)
SSM6N43FU(1.52)
SSM3K43FS(1.52)
SSM6J205FE(0.234)
SSM6P28TU(0.234)
SSM6N29TU(0.143)
SSM6L13TU(0.143)
SSM6N36FE(1.52)
SSM3K36TU(1.52)
SSM3K36MFV(1.52)
SSM3K36FS(1.52)
SSM6L36TU(1.52)
SSM6K25FE(0.145)
SSM6J26FE(0.23)
SSM6L12TU(0.145)
SSM6K24FE(0.145)
SSM6J25FE(0.26)
SSM6P26TU(0.23)
SSM6P25TU(0.26)
SSM6N36TU(1.52)
SSM6N25TU(0.145)
SSM6N24TU(0.145)
SSM6L11TU(0.145)
SSM6L10TU(0.145)
SSM3K05FU(1.2)
SSM6N05FU(1.2)
SSM6P36TU(3.6)
SSM3J36MFV(3.6)
SSM3J36FS(3.6)
SSM6J07FU(0.8)
SSM6J06FU(0.5)
SSM6N7002AFU(3.3)
SSM6N04FU(12)
SSM3K7002BF(3.3)
2SJ168(2)
2SK1062(1)
SSM6N7002BFU(3.3)
SSM5P05FU(4)
SSM6P05FU(4)
SSM3J05FU(4)
2SJ305(4)
SSM6P09FU(4.2)
SSM3J09FU(4.2)
2SK2009(2)
SSM6P41FE(0.3)
SSM6N42FE(0.26)
SSM3K7002F(3.3)
SSM3K7002AF(3.3)
SSM3K7002FU(3.3)
SSM3K7002AFU(3.3)
SSM3K7002BFS(3.3)
SSM6N7002BFE(3.3)
P = P-ch
CN = Complementary N-ch
CP = Complementary P-ch
NS = N-ch + SBD
PS = P-ch + SBD
[ ] = Under development
PD = P-ch + Driver
(load switch)
Notes:
( ) = R
DS(ON)
max
$ = 10-V drive
# = 2.5-V drive
= 1.8-V drive
= High-speed diode
N = N-ch
Package
Product series
PW-Mini
TO-220NIS TO-220SM(W)
TO-92MOD DP
PW-Mold
TO-220AB TO-220FL/SM
TSON Advance TSSOP-8
TFP
SOP-8
TO-3P(N)ISTO-3P(N) TO-3P(L) Chip LGA
TPS
VS-6
PS-8VS-8
SOP-8 Lead Clamp
S-Mini TSM USM UFM VESM CST3 CST3B CST4 SMV US6 CST6D USV UFV ESVSSM
TO-220SIS
SOP Advance
: π-MOSIII
: U-MOS
: L2-π-MOSVI
: π-MOSV
: π-MOSVI
: L2-π-MOSV
: π-MOSVII
: π-MOSIV
: DTMOSI
: DTMOSII
STP TSSOP Advance
New PW-Mold2New PW-Mold
TO-220(W)
ES6UF6
3
Selection Guide (By Absolute Maximum Ratings)
76
A A A 0 A A . A A n A . ,, A A . . A n v . A . v . A A . A A A A A A A A A A . . A A A A . A A A A A . . . . A . A . A . A A A A 0 . A A A A A A A . A . . A A A . A A . A A A /\ A Q A . A A A x x x x | x A A, A A A . n . AAA, . A n n A Pr) 1- H a A . A A A A A A A A. m A. A A O O A V (d H V i? 1 § D s I Bi 0 D 734 A A A A . A A
V
DSS
(V)
I
D
(A)
20 24 30 40 50 60 100 150 180 200 250 400 450 500 525 550 600 800 900 1000
12
V
DSS
(V)
I
D
(A)
1
1.3
1.4
1.5
1.6
1.1
1.2
1.7
1.8
1.9
2
2.5
2.6
2.1
2.7
2.8
2.9
3
3.5
3.6
3.8
3.9
3.4
3.2
3.3
4
2.2
2.3
2.4
2SJ680 (2.0)
2SK4022 (1.7)
2SJ507 (0.7)
2SJ360 (0.73)
2SK2961 (0.3)
2SK2615 (0.3)
2SK3658 (0.3)
2SJ338 (5.0)
2SK2162 (5.0)
2SJ313 (5.0)
2SK2013 (5.0)
2SK3670 (1.7)
TPCS8009-H (0.35)
2SK1119 (3.8)
2SK1930 (3.8)
2SK2603 (3.6)
2SK2883 (3.6)
TPCS8004-H (0.8)
TPC8012-H (0.4)
2SK2992 (3.5)
TPCS8007-H (0.45)
2SK3498 (5.5)
2SK3798 (3.5)
2SK2608 (4.3)
2SK2719 (4.3)
2SK3564 (4.3)
2SK3566 (6.4)
2SK3301 (20)
2SK2845 (9)
2SK2733 (9.0)
2SK3472 (4.6)
2SK3757 (2.45)
2SK3766 (2.45)
2SK3374 (4.6)
2SK4023 (4.6)
2SK4018 (0.35)
TPCP8003-H (0.18)
TPC8214-H (0.18)
2SK2962 (0.7)
2SJ509 (1.9)
2SK2963 (0.7)
2SJ508 (1.9)
2SK2200 (0.35)
2SK2201 (0.35)
2SJ567 (2.0)
TK4A50D (2.0)
2SK2862 (3.2)
2SK2599 (3.2)
2SK3373 (3.2)
2SK4026 (9)
2SK4003 (2.2)
2SK4002 (5)
TK2Q60D (4.3)
2SK3085 (2.2)
2SK3567 (2.2)
TK4A55DA (2.45)
TK4A55D (1.9)
TK4A60DA (2.2)
TK4A60D (1.7)
2SK2846 (5.0)
2SK3767 (4.5)
TK3A60DA (2.8)
2SK3371 (9)
2SK2865 (5.0)
(Short lead)
2SK3975 (2.2)
TPCP8403 (0.070)
TPC6006-H (0.075)
1
1.3
1.4
1.5
1.6
1.2
1.7
1.8
1.9
2
2.5
2.6
2.1
2.7
2.8
2.9
3
3.5
3.6
3.8
3.9
3.4
3.3
3.2
4
2.2
2.3
2.4
1.1
SSM3J110TU (0.094)
SSM3J304T (0.127)
SM3J312T (0.091)
SSM3J13T (0.07)
SSM3K318T (0.145)
SSM6J23FE (0.16)
PD
SSM6E01TU (0.16)
SSM6K32TU (0.44)
SSM6K407TU (0.44)
SSM6J21TU (0.05)
SSM6J51TU (0.054)
2SJ610 (2.55)
TPCS8008-H (0.58)
TPCA8008-H (0.58)
2SK3462 (1.7)
TPC8404(2.55)
CP
TPC8404(1.7)
CN
SSM5H03TU (0.3)
NS
SSM6E03TU (0.144)
PD
SSM5G09TU (0.13)
PS
Legend
P = P-ch
CN = Complementary N-ch
CP = Complementary P-ch
NS = N-ch + SBD
PS = P-ch + SBD
[ ] = Under development
PD = P-ch + Driver
(load switch)
Notes:
( ) = R
DS(ON)
max
$ = 10-V drive
# = 2.5-V drive
= 1.8-V drive
= High-speed diode
N = N-ch
Package
Product series
PW-Mini
TO-220NIS TO-220SM(W)
TO-92MOD DP
PW-Mold
TO-220AB TO-220FL/SM
TSON Advance TSSOP-8
TFP
SOP-8
TPC8218-H (0.057)
TO-3P(N)ISTO-3P(N) TO-3P(L) Chip LGA
TPS
VS-6
PS-8VS-8
SOP-8 Lead Clamp
S-Mini TSM USM UFM VESM CST3 CST3B CST4 SMV US6 CST6D USV UFV ESVSSM
TO-220SIS
SOP Advance
: π-MOSIII
: U-MOS
: L2-π-MOSVI
: π-MOSV
: π-MOSVI
: L2-π-MOSV
: π-MOSVII
: π-MOSIV
: DTMOSI
: DTMOSII
STP TSSOP Advance
New PW-Mold2New PW-Mold
TO-220(W)
ES6UF6
SSM5G04TU (0.24)
PS
SSM5G02TU (0.16)
PS
TPC6105 (0.11)
TPCF8301 (0.11)
TPCF8B01 (0.11)
TPCF8103 (0.11)
TPCF8201 (0.049)
TPCF8A01 (0.049)
TPCF8302 (0.059)
TPCF8303 (0.058)
SSM3K104TU (0.056)
SSM3K121TU (0.048)
TPCP8303 (0.04)
SSM3J120TU (0.038)
SSM3J111TU (0.48)
SSM3K106TU (0.53)
SSM6K06FU (0.16)
SSM3K107TU (0.41)
SSM3J113TU (0.169)
SSM3J109TU (0.13)
SSM3J115TU (0.098)
SSM3K101TU (0.103)
SSM3K102TU (0.071)
SSM3K122TU (0.123)
SSM6J08FU (0.18)
SSM3K301T (0.056)
SSM3J327F (0.095)
SSM3J317T (0.107)
SSM3J46CTB (0.103)
SSM6K31FE (0.54)
SSM6K30FE (0.42)
SSM6K22FE (0.17)
SSM6J206FE (0.13)
SSM6K204FE (0.126)
SSM6K203FE (0.061)
SSM6K211FE (0.047)
SSM6J212FE (0.0434)
SSM6P54TU (0.228)
SSM6P39TU (0.213)
SSM6K405TU (0.126)
SSM6J50TU (0.064)
SSM6K404TU (0.055)
SSM3J325F (0.155)
SSM6K18TU (0.04)
SSM5H07TU (0.54)
NS
SSM5H05TU (0.16)
NS
SSM5H08TU (0.16)
NS
SSM6K08FU (0.105)
SSM6N39TU (0.119)
SSM6L39TU (0.119)
TPCP8AA1 (0.105)
NS
SSM5H10TU (0.119)
NS
SSM6N42FE (0.252)
SSM3J114TU (0.149)
SSM3J108TU (0.158)
SSM6J53FE (0.136)
SSM6E02TU (0.136)
PD
TPCP8BA1 (0.18)
PS
TPCF8402 (0.077)
TPCF8304 (0.072)
TPCF8402 (0.05)
TPCP8404 (0.05)
TPCP8402 (0.072)
TPCP8404 (0.05)
SSM3J118TU (0.48)
SSM3K128TU (0.36)
SSM3J112TU (0.79)
SSM6K07FU (0.22)
SSM3J117TU (0.225)
SSM3K105TU (0.2)
SSM3K124TU (0.12)
SSM3K119TU (0.074)
SSM3K127TU (0.123)
SSM3K116TU (0.1)
SSM3J02T (0.5)
SSM3J01T (0.4)
SSM3J305T (0.477)
SSM3K12T (0.175)
SSM3K02T (0.2)
SSM3J14T (0.17)
SSM3K303T (0.12)
SSM3K01T (0.12)
SSM3K316T (0.065)
SSM3K14T (0.067)
SSM3J314T (0.1)
SSM3J306T (0.225)
SSM6J207FE (0.491)
SSM6K210FE (0.371)
SSM6K208FE (0.133)
SSM6K202FE (0.085)
SSM6P40TU (0.403)
SSM6J402TU (0.225)
SSM6J401TU (0.145)
SSM6K34TU (0.077)
SSM5G01TU (0.8)
PS
SSM3J313T (0.268)
SSM6N40TU (0.182)
SSM6L40TU (0.182)
SSM5H11TU (0.182)
NS
SSM5H12TU (0.133)
NS
SSM5G10TU (0.213)
PS
SSM5G11TU (0.403)
PS
SSM5H01TU (0.45)
NS
SSM5H14F (0.078)
NS
3
Selection Guide (By Absolute Maximum Ratings)
98
A m . cm 4. A o m n m n A + m u. u A . x A j . v o . A o o a x m A n w . . a wax u A ,1 <2 v="" a="" m="" m="" a="" ,="" ,="" px="" 9.="" ¢="" fl="" w="" n="" w="" a="" p.="" n="" ‘="" a="" +="" a="" +="" ,="" a~="" m.="" m="" n!="" m!="" x)="" w="" m="" '="" m="" +="" m="" m="" na:="" na="" .="" a="" a="" n="" a="" a="" u)="" no="" v="" 0="" mr="" n.="" o="" m="" m="" a="" ,="" pm="" ha="" x="" pp="" x="" nx="" m="" us.="" m="" v="" max="" m.="" m="" +="" mx="" my="" ni="" a="" n.="" o="" a="" m="" cu="" m="" u="" u="" m="" up="" m="" m="" u»="" o="" a="" n.="" .="" w="" n="" m="" n="" .="" a="" u="" m="" 0="" s="" o="" a="" «a="" m="" ms.="" 6="" n4="" n0="" 9="" o="" u="" u="" u="" .="" n="" p.="" ;="" u="" .="" o="" n="" -="" o="" u="" p.="" u="" a="" .="" a="" o="" a="" nix]="" d="" u="" 0="" d="" c="" o="" 0="" m=""><> v 6) fl v 1;» < x="" r)=""> a I a; a ~> D a a V i + . A + A o o A +
Legend
TPCS8209 (0.05)
I
D
(A)
20 24 30 40
TPC8208 (0.05)
TPCS8209 (0.03)
TPCS8210 (0.03)
TPCS8302 (0.035)
50 60 100 150 180 200 250 400 450 500 525 550 600 650 700 800 900 100012
TPC6111 (0.04)
TPCT4201 (0.031)
TPCT4203 (0.031)
I
D
(A)
4.5
4.6
5
5.2
5.5
7
7.2
7.5
8
8.5
8.3
9
10
6
6.5
4.2
4.4
4.7
4.8
5.6
4.5
4.6
5
5.2
5.5
7
7.2
7.5
8
8.5
8.3
9
9.5 9.5
10
6
6.5
4.2
4.4
4.7
4.8
5.6
2SK2989 (0.15)
2SJ537 (0.19)
TPCP8301 (0.031)
TPCP8302 (0.033)
TPCP8202 (0.023)
TPC8401 (0.038)
TPC6103 (0.035)
TPC8211 (0.036)
TPC8104-H (0.065)
TPCS8303 (0.021)
TPC8A01 (0.018)
TPC8210 (0.015)
TPC8021-H (0.017)
SSM3J130TU (0.0258)
SSM6K403TU (0.028)
SSM3J129TU (0.046)
SSM6K406TU (0.0385)
SSM3K123TU (0.028)
TPCF8101 (0.028)
TPCF8001 (0.023)
TPCP8001-H (0.016)
TPCP8004 (0.009)
TPCF8001 (0.032)
TPC6004 (0.024)
TPC8207 (0.02)
SSM6J409TU (0.0221)
TPCS8211 (0.024)
TPCS8204 (0.017)
TPCS8102 (0.02)
TPCS8302 (0.035)
TPCS8212 (0.024)
TPCS8208 (0.017)
TPCS8213 (0.013)
TPCF8102 (0.030)
TPCT4202 (0.038)
TPCT4204 (0.038)
TPC6011 (0.020)
TPC6005 (0.028)
2SK4017 (0.1)
2SJ681 (0.17)
2SK4019 (0.23)
2SK4020 (0.8)
TPC6107 (0.055)
SSM3K309T (0.031)
SSM3J307T (0.031)
SSM3K310T (0.028)
TPC6109-H (0.059)
TPCP8101 (0.030)
TPCP8201 (0.05)
TPCP8402 (0.077)
TPC6108 (0.06)
TPC8405 (0.033)
TPC6007-H (0.054)
TPC8213-H (0.05)
TPCF8002 (0.023)
TPC8216-H (0.020)
2SK3205 (0.52)
2SJ438 (0.19)
2SJ378 (0.19)
2SK2400 (0.23)
2SK2229 (0.16)
2SJ669 (0.17)
TPCA8009-H (0.35)
2SJ516 (0.8)
2SK2417 (0.5)
2SK2350 (0.4)
2SK2914 (0.5)
2SK3633 (1.7)
2SK2607 (1.2)
2SK2606 (1.2)
2SK3880 (1.7)
2SK4115 (2.0)
2SK2847 (1.4)
2SK3017 (1.25)
2SK3473 (1.6)
2SK3878 (1.3)
2SK2613 (1.7)
2SK1365 (1.8)
2SK2274 (1.7)
2SK3700 (2.5)
2SK1359 (3.8)
2SK2884 (2.2)2SK3565 (2.5)
2SK3742 (2.5)
2SK4013 (1.7)2SK4014 (2.0)
TK5A50D (1.5)
TK6A50D (1.48)
TK5A65D (1.45)
TK6A53D (1.3)
2SK2381 (0.8)
2SJ407 (1.0)2SJ512 (1.25)
2SK2835 (0.8)
2SK2991 (1.5)
2SK3466 (1.5)
2SK3868 (1.7)
TK5A55D (1.88)
TK6A55DA (1.48)
TK8A55DA (1.07)
TK8A60DA (1.0)
TK8A65D (0.84)
TK9A55DA (0.86)
TPCA8010-H (0.45)
TPCP8006 (0.01)
2SK3799 (1.3)
2SK3879 (1.7)
2SK2542 (0.85)
2SK2776 (0.85)
2SK3538 (0.85)
TK8A50D (0.85)
2SK4042 (0.97)
2SJ668 (0.17)
2SK2399 (0.23)
2SK4033 (0.1)
2SK2920 (0.8)
2SK3342 (1.0)
2SK4103 (1.5)
2SK3863 (1.5)
TK6P53D (1.3)
TPCP8403 (0.040)
TPCP8203 (0.040)
TPC8406-H (0.027)
TPC8110 (0.025)
TPC8116-H (0.03)
TPC8022-H (0.027)
TPC8406-H (0.03)
TPCA8020-H (0.027)
TPCA8107-H (0.03)
TPCP8103-H (0.040)
TPCP8102 (0.018)
2SK4021 (1.0)
TPC8A05-H (0.012)
TPC8053-H (0.0225)
2SK3669 (0.125)
2SK3265 (1.0)
TPC8109 (0.02)
TPC8119 (0.012)
TPC8115 (0.01)
2SK3438 (1.0)
TK6A65D (1.11)
2SK2602 (1.25)
2SK2777 (1.25)
TK6A60D (1.25)
2SK3947 (1.4)
2SK3312 (1.25)
2SK2866 (0.75)
2SK2889 (0.75)
2SK2952 (0.55)
2SK2838 (1.2)
2SK2679 (1.2)
2SK2841 (0.55)
2SK2949 (0.55)
2SJ200 (0.83)
2SK1529 (0.83)
2SK3497 (0.15)
2SJ618 (0.37)
2SK3310 (0.65)
2SK3437 (1.0)
2SK3399 (0.75)
2SK3453 (1.0)
2SK2968 (1.25)
2SK2601 (1.0)
TK10A60D (0.75)
TK10A50D (0.72)
2SK4015 (0.86)
2SK3309 (0.65)
2SK3869 (0.68)
2SK3417 (1.8)
SSM3K320T (0.077)
TPCL4203 (0.036)
TPCL4201 (0.031)
SSM3J326T (0.0457)
SSM3J321T (0.046)
TPC8212-H (0.021)
TPCP8J01 (0.035) (-32V)
TPCS8214 (0.135)
TPC8405 (0.026)
TPC8A01 (0.025)
TPCF8104 (0.028)
TPCL4202 (0.04)
SSM3K131TU (0.0415)
SSM3K315T (0.0415)
P = P-ch
CN = Complementary N-ch
CP = Complementary P-ch
NS = N-ch + SBD
PS = P-ch + SBD
[ ] = Under development
PD = P-ch + Driver
(load switch)
Notes:
( ) = R
DS(ON)
max
$ = 10-V drive
# = 2.5-V drive
= 1.8-V drive
= High-speed diode
N = N-ch
Package
Product series
PW-Mini
TO-220NIS TO-220SM(W)
TO-92MOD DP
PW-Mold
TO-220AB TO-220FL/SM
TSON Advance TSSOP-8
TFP
SOP-8
TO-3P(N)ISTO-3P(N) TO-3P(L) Chip LGA
TPS
VS-6
PS-8VS-8
SOP-8 Lead Clamp
S-Mini TSM USM UFM VESM CST3 CST3B CST4 SMV US6 CST6D USV UFV ESVSSM
TO-220SIS
SOP Advance
: π-MOSIII
: U-MOS
: L2-π-MOSVI
: π-MOSV
: π-MOSVI
: L2-π-MOSV
: π-MOSVII
: π-MOSIV
: DTMOSI
: DTMOSII
STP TSSOP Advance
New PW-Mold2New PW-Mold
TO-220(W)
ES6UF6
SSM3J132TU (0.0178)
V
DSS
(V)
V
DSS
(V)
Selection Guide (By Absolute Maximum Ratings)
3
1110
Na N' N. pa px px N» N. Pa we no No no use N» (“.0 o .e gamut: N* m: n P0 P0 m m? N33 no ”co m «Emma N5“ MK} No on N x) NSOY N a w N1 N: M N0 N! we No Nsm Po N No No NZ? ND Ns< n»="" n="">< nb="" «co="" m="" .00="" fawn="" m="" *0="" guy:="">
Legend
NS
TPCA8A05-H (0.0129)
N
TPC8050-H (0.0145)
N
TPC8048-H (0.0069)
2SJ304 (0.12)
2SJ312 (0.12)
NS
TPCC8A01-H (0.0099)
2SK2614 (0.046)
N
TPCA8052-H (0.0115)
NS
TPC8A02-H (0.0056)
N
TPC8032-H (0.0065)
N
TPC8047-H (0.0076)
N
TPC8033-H (0.0053)
N
TPC8039-H (0.006)
NS
TPC8A03-H (0.0056)
P
TPC8123 (0.0090)
3020 5040 60 75 80 100 150 200 250 300 450 500 525 550 600 900/1000
20
21
16
18
14
15
13
12
12.5
11
V
DSS
(V)
I
D
(A)
V
DSS
(V)
I
D
(A)
23
22
17
19
2SJ380 (0.21)
2SK2382 (0.18)
2SK2401 (0.18)
2SJ201 (0.625)
2SK1530 (0.625)
2SK2508 (0.25)
2SK2598 (0.25)
2SK3994 (0.105)
2SK2993 (0.105)
2SK3445 (0.105)
2SK3544 (0.4)
2SK2882 (0.12)
2SK3387 (0.12)
2SJ619 (0.21)
2SJ412 (0.21)
2SK2391 (0.085)
20
21
16
18
14
15
13
12
12.5
11
23
22
17
19
N
TPC8027 (0.0027)
N
TPC8028 (0.0043)
N
TPC8029 (0.0038)
N
TPC8042 (0.0034)
N
TPC8049-H (0.0107)
N
TPC8051-H (0.0097)
N
TPC8052-H (0.0115)
NS
TPC8A04-H (0.0036)
N
TPC8034-H (0.0035
)
P
TPC8114 (0.0045)
P
TPC8117 (0.0039)
N
TPC8045-H (0.0039)
N
TPC8046-H (0.0057)
2SJ349 (0.045)
2SJ401 (0.045)
2SK2782 (0.055)
2SK3403 (0.4)
2SK3743 (0.4)
2SK3905 (0.31)
2SK3904 (0.26)
2SK3907 (0.23)
2SK2699 (0.65)
TK12J55D (0.57)
TK16J55D (0.37)
2SK3903 (0.44)
TK15J60U (0.3)
TK15J50D (0.4)
2SK2953 (0.4)
2SK2916 (0.4)
2SK2917 (0.27)
2SK3314 (0.49)
N
TPC8041 (0.007)
N
TPC8037-H (0.0114)
N
TPC8038-H (0.0114)
NS
TPC8A06-H (0.0101)
2SJ464 (0.12)
2SJ620 (0.09)
TPCA8006-H (0.067)
TPCA8053-H (0.0223)
TPCA8022-H (0.026)
2SK3398 (0.52)
2SK3068 (0.52)
2SK3313 (0.62)
TK12A50D (0.52)
TK13A50DA (0.47)
TK13A50D (0.4)
TK13A45D
(0.46)
TK11A55D (0.63)TK11A60D (0.65)
2SK2965 (0.26)
P
TPC8111 (0.012)
N TPC8014 (0.014)
N
TPC8021-H (0.017)
N TPC8025 (0.009)
P TPC8121 (0.012)
P
TPC8113 (0.01)
N
TPC8030 (0.0095)
N
TPC8031-H (0.0133)
N
TPCP8005-H (0.0129)
2SK1489 (1.0)
1000V:
2SK4016 (0.5)
TK14A55D (0.37)
TK13A60D (0.43)
TK15A50D (0.3)
TK18A50D (0.27)
TK15A60U (0.3)
TK15A60D (0.37)
2SK3935 (0.25)
P
TPCS8105 (0.0135)
P
TPCS8104 (0.012)
2SK3936 (0.25)
2SK4207 (0.95)
900V:
2SK3911 (0.32)
TK20J60U (0.19)
TK20J50D (0.27)
2SK3906 (0.33)
TK20A60U (0.19)
TK20D60U (0.19)
TK12J60U (0.4)
TK12D60U (0.4)
TK12A60U (0.4)
TK12A53D (0.58)
TK12X53D (0.58)
TK12A60D (0.55)
TK15D60U (0.3)
TJ20A10M3 (0.090)
N
TPCC8003-H (0.0169)
P
TPC8120 (0.0032)
N
TPC8036-H (0.0045)
N
TPC8035-H (0.0032)
N
TPC8060-H (0.0037)
P = P-ch
CN = Complementary N-ch
CP = Complementary P-ch
NS = N-ch + SBD
PS = P-ch + SBD
[ ] = Under development
PD = P-ch + Driver
(load switch)
Notes:
( ) = R
DS(ON)
max
$ = 10-V drive
# = 2.5-V drive
= 1.8-V drive
= High-speed diode
N = N-ch
Package
Product series
PW-Mini
TO-220NIS TO-220SM(W)
TO-92MOD DP
PW-Mold
TO-220AB TO-220FL/SM
TSON Advance TSSOP-8
TFP
SOP-8
TO-3P(N)ISTO-3P(N) TO-3P(L) Chip LGA
TPS
VS-6
PS-8VS-8
SOP-8 Lead Clamp
S-Mini TSM USM UFM VESM CST3 CST3B CST4 SMV US6 CST6D USV UFV ESVSSM
TO-220SIS
SOP Advance
: π-MOSIII
: U-MOS
: L2-π-MOSVI
: π-MOSV
: π-MOSVI
: L2-π-MOSV
: π-MOSVII
: π-MOSIV
: DTMOSI
: DTMOSII
STP TSSOP Advance
New PW-Mold2New PW-Mold
TO-220(W)
ES6UF6
P TPC8107 (0.007)
N
TPC8026 (0.0066)
P TPC8112 (0.006)
P TPC8118 (0.007)
N
TPC8040-H (0.0097)
P
TPCC8103 (0.012)
N
TPCA8040-H (0.0094)
N
TPCM8003-H (0.0129)
N
TPCM8001-H (0.0095)
NS
TPCM8A05-H (0.0129)
N
TPCC8001-H (0.0083)
N
TPCC8002-H (0.0083)
P
TPCC8102 (0.0189)
N
TPCC8006-H (0.008)
3
Selection Guide (By Absolute Maximum Ratings)
1312
.. renal: a. 9 AC‘ w»: m<1>
Legend
TK55D10J1 (0.0105)
TK80D08K3 (0.0045)
3020 5040 60 75 80 100 150 200 250 300 450 500 525 550 600 900/1000
27
28
30
32
35
36
38
40
44
45
46
60
70
75
100
120
130
150
50
55
25
26
V
DSS
(V)
I
D
(A)
34
V
DSS
(V)
I
D
(A)
24
2SK2967 (0.068)
2SK2995 (0.068)
2SK3444 (0.082)
2SK3176 (0.052)
2SK3443 (0.055)
TK50X15J1
(0.03)
TK40X10J1 (0.020)
2SK2789 (0.085)
2SK2314 (0.085)
2SK1382 (0.020)
2SK1381 (0.032)
2SK2886 (0.02)
2SK3844 (0.0058)
2SK2232 (0.046)
2SK2507 (0.046)
2SK3846 (0.016)
2SK2311 (0.046)
2SJ334 (0.038)
2SK2385 (0.03)
2SK3662 (0.0125)
2SJ402 (0.038)
2SK3847 (0.016)
$2SK3506 (0.02)
2SK3843 (0.0035)
TK80X04K3
(0.0035)
$2SK2551 (0.011)
2SK2745 (0.0095)
TK70J04J3 (0.0038)
$
2SK2550
(0.03)
$
2SK2744
(0.02)
2SK2233 (0.03)
2SK2266 (0.03)
2SK2376 (0.017)
$2SK2398 (0.03)
$2SK2445 (0.018)
2SK2173 (0.017)
2SK4034
(0.0058)
TK70X06K3
(0.008)
2SK3842
(0.0058)
80
27
28
30
32
35
36
38
40
44
45
46
60
70
75
100
120
130
150
50
55
25
26
34
24
80
2SK3845 (0.0058)
2SK2313 (0.011)
2SK2267 (0.011)
$
2SK3051
(0.03)
N
TPCC8005-H (0.0064)
2SK1486 (0.095)
2SK1544 (0.2)
2SK3132 (0.09)
TK40J60T (0.08)
2SK3131 (0.11)
2SK3625 (0.082)
NS
TPCA8A02-H (0.0053)
NS
TPCA8A08-H (0.0042)
N
TPCA8024 (0.0043)
N
TPCA8012-H (0.0049)
N
TPCA8025 (0.0036)
N
TK40P03M1
(0.0108)
N
TK50P03M1 (0.0075)
N
TK40P04M1 (0.011)
NS
TPCA8A04-H
(0.0032)
N
TPCA8015-H
(0.0054)
N
TPCA8046-H (0.0054)
N
TPCA8047-H (0.0073)
N
TPCA8030-H (0.011)
N
TPCA8031-H (0.011)
N
TPCA8036-H (0.0038)
N
TPCM8006 (0.007)
N
TPCM8004-H (0.011)
P
TPCM8102 (0.0077)
N
TPCA8018-H (0.0062)
N
TPCA8039-H (0.0057)
N
TPCM8002-H (0.0062)
N
TPCA8014-H
(0.009)
N
TPCA8027-H
(0.010)
N TPCA8016-H (0.021)
N TPCA8049-H (0.0104)
N TPCA8048-H (0.0066)
N TPCA8051-H (0.0094)
N TPCA8050-H (0.0142)
P
TPCA8104
(0.016)
P
TPCA8108 (0.0095)
NTPCA8011-H (0.0035)
P
TPCA8102 (0.006)
P
TPCA8103 (0.0042)
P
TPCA8106 (0.0037)
N
TPCA8019-H
(0.0031)
N
TPCA8026
(0.0022)
N
TPCA8042
(0.0033)
N TPCA8060-H (0.0034)
N
TPCA8045-H (0.0036)
N
TPCA8028-H
(0.0028)
N
TK50P04M1
(0.0087)
TK70A06J1 (0.0064)
TK25A10K3 (0.040)
TJ70A06J3 (0.008)
TK100F06K3
(0.005)
TK50F15J1 (0.03)
TK130F06K3 (0.0034)
TJ120F06J3 (0.008)
TK150F04K3
(0.0021)
TK150F04K3L
(0.0021)
TK70X04K3
(0.0056)
TK70X04K3L
(0.0056)
TK100F04K3
(0.003)
TK100F04K3L
(0.003)
TK60A08J1 (0.0078)
TK40A08K3 (0.009)
TK40A10K3 (0.015)
TK80A08K3 (0.0045)
TK30A06J3A (0.026)
TK40D10J1 (0.015)
TK40A10J1 (0.015)
TK55A10J1 (0.0105)
TK60D08J1 (0.0078)
TK70D06J1
(0.0064)
P = P-ch
CN = Complementary N-ch
CP = Complementary P-ch
NS = N-ch + SBD
PS = P-ch + SBD
[ ] = Under development
PD = P-ch + Driver
(load switch)
Notes:
( ) = R
DS(ON)
max
$ = 10-V drive
# = 2.5-V drive
= 1.8-V drive
= High-speed diode
N = N-ch
Package
Product series
PW-Mini
TO-220NIS TO-220SM(W)
TO-92MOD DP
PW-Mold
TO-220AB TO-220FL/SM
TSON Advance TSSOP-8
TFP
SOP-8
TO-3P(N)ISTO-3P(N) TO-3P(L) Chip LGA
TPS
VS-6
PS-8VS-8
SOP-8 Lead Clamp
S-Mini TSM USM UFM VESM CST3 CST3B CST4 SMV US6 CST6D USV UFV ESVSSM
TO-220SIS
SOP Advance
: π-MOSIII
: U-MOS
: L2-π-MOSVI
: π-MOSV
: π-MOSVI
: L2-π-MOSV
: π-MOSVII
: π-MOSIV
: DTMOSI
: DTMOSII
STP TSSOP Advance
New PW-Mold2New PW-Mold
TO-220(W)
ES6UF6
N
TPCC8007 (0.0046)
N
TPCC8008 (0.0068)
DPAK
3
Selection Guide (By Absolute Maximum Ratings)
1514
C 1 J ( ’ > ( J I 3 W @’ @7. ‘%~ - ‘5 - Q. Q. Q)? Q. @9
5.0
4.4
6.0
0.4 1.27
3.3
3.1
3.3
0.3 0.65
3.5
3.65
4.65
0.25 0.8
Unit: mmUnit: mm Unit: mm Unit: mm Unit: mm
5.0
5.0
6.0
0.4 1.27
3.0
4.4
6.4
0.25 0.65
Unit: mm
2.9
2.4
2.8
0.33
0.65
Unit: mmUnit: mm Unit: mm
2.9
1.5
1.9
0.3
0.65
2.9
1.6
2.8
0.3
0.95
Unit: mm
1.6
3.4
3.8
0.3
φ0.3
1.59
1.59
0.65
Unit: mmUnit: mm Unit: mm
Thickness:
0.38 typ.
Thickness:
0.7 typ.
Thickness:
0.9 typ.
Thickness:
0.48 typ.
Thickness:
1.1 typ.
Thickness:
0.7 typ.
Thickness:
0.5 typ.
Thickness:
0.7 typ.
Thickness:
1.1 typ.
Thickness:
0.7 typ.
Thickness:
0.38 typ.
Thickness:
0.38 typ.
Thickness:
0.9 typ.
Thickness:
0.55 typ.
Thickness:
0.55 typ.
Thickness:
0.9 typ.
Thickness:
0.7 typ.
Unit: mmUnit: mm
0.6
1.0
0.15 0.35
1.2
0.8
1.2
0.22
0.8
2.0
1.25
2.1
0.3
1.3
1.6
0.8
1.6
0.2
1.0
0.8
1.2
0.25 0.45
2.0
1.25
2.1
0.2
0.65
Unit: mm Unit: mm
2.0
1.7
2.1
0.3
0.65
Unit: mmUnit: mm Unit: mmUnit: mm Unit: mm
2.0
1.7
2.1
0.3
1.3
1.6
1.2
1.6
0.2
0.5
2.9
1.5
2.5
0.4
1.9
2.9
1.6
2.8
0.4
1.9
0.8
1.2
0.2 0.5
Typical product: TPCC8005-H
Very Thin & Small, 6-pin
Typical product: TPC6003
Chip-Scale Package, Transfer Molded, 3-Pin
Typical product: SSM3K35CT
Ultra-Super-mini, 6-pin
Typical product: SSM6N15FU
Ultra-super-Mini Flat lead
Typical product: SSM3J130TU
TSON Advance
VS-6
CST3
US6 (SOT-353)(SC-88A)
UFM
USV (SOT-353)(SC-88A)
Ultra-Super-mini, 5-pin
Typical product: SSM5N15FU
2.0
1.25
2.1
0.2
0.65
Typical product: TPCM8001-H
P
rogressive &
S
mall
8
-pin Series
Typical product: TPCP8402
Very Extreme Super-Mini
Typical product: SSM3K35MFV
Thin Super-Mini
Typical product: SSM3J304T
Super-Mini, 5-pin
Typical product: SSM5H14F
TSSOP Advance
PS-8
VESM (SOT-723)
TSM
SMV (SOT-25)(SC-74A)
2.9
1.6
2.8
0.4
0.95
SOP-8
Chip LGA
SSM (SOT-416)(SC-75)
CST4
CST6D
Typical product: TPC8035-H
Land Grid Array
Typical product: TPCL4201
Small Super-Mini
Typical product: SSM3K35FS
Chip-Scale Package, Transfer Molded, 4-Pin
Typical product: SSM4K27CT
Chip-Scale Package, Transfer Molded, 6-Pin, D-Type
Typical product: SSM6N37CTD
1.0
0.9
0.15 0.35
SOP Advance
STP2
USM (SOT-323)(SC-70)
ESV (SOT-553)
ES6 (SOT-563)
1.6
1.2
1.6
0.2
0.5
Typical product: TPCA8028-H
Small Thin Package
Typical product: TPCT4204
Ultra-Super-Mini
Typical product: SSM3K15FU
Extreme Super-mini, 5-pin
Typical product: SSM5N15FE
Extreme Super-mini, 6-pin
Typical product: SSM6N36FE
Unit: mm Unit: mm Unit: mm Unit: mmUnit: mm
TSSOP-8
VS-8
CST3B
UF6
S-Mini (SOT-346)(SC-59)
UFV
Typical product: TPCS8208
Very Thin & Small, 8-pin
Typical product: TPCF8101
Chip-Scale Package, Transfer Molded, 3-Pin, B-Type
Typical product: SSM3J46CTB
Ultra Super mini Flat lead 6-pin
Typical product: SSM6J409TU
Super-Mini
Typical product: SSM3K15F
Ultra-super-mini, Flat lead, 5-pin
Typical product: SSM5H12TU
Thickness:
0.75 typ.
Thickness:
0.85 typ.
Thickness:
0.8 typ.
Thickness:
0.9 typ.
Thickness:
0.8 typ.
Thickness:
0.75 typ.
Thickness:
0.25 typ.
Thickness:
1.6 typ.
Thickness:
0.65 typ.
Thickness:
0.95 typ.
2.0
1.7
2.1
0.3
1.3
4-1 Packaging Options
The SSM Series comes in small, thin packages suitable for portable devices. Chip-scale packages (1006 size) help reduce system size.
SSM Series
The TPC Series comes in small, thin packages suitable for portable devices. The latest TSON Advance package allows the maximum permissible
power dissipation equivalent to SOP-8, but occupies 64% less board space.
TPC Series
Low-VDSS MOSFETs (in Small SMD Packages)
4
16
Power management switches , 7 4a Ada ter w 7 7 V I" pm P-cn, TPcam Hana/5123 P F8104 P N-ch. 1120303015023 1 J I 19 V \_| \_| sMsKmazF T T v , \_1 T J T ’J 4' ‘ L T ,; Charger HS, TPCFBGDS-H , \_1 LS TPCPBDGS-H HS, TPcsoa7-H J DuaL TFCBZIS-H 1 J LS TPcao37-H % fl ’ y—\ CMSIE , —‘ HS, TPcsoa7-H T J LS TPcao37-H _ 1.8V Banery1 ’ 1 HS, TPcsoa7-H I J LS TPcao37-H U 1.5 v T L —> r 1.:— M 1 HS, TPcsoa7-H T J LS TPcao37-H H 1.05 v
Power management switches
P-ch: SSM3J114TU
P-ch: SSM3J115TU
Adapter
Input
19 V
Battery 1
Battery 2
VGA
DDR
3.3 V/5 V
1.5 V
1.05 V
1.8V
Charger
V-Core
HS: TPCA8030-H
LS: TPCA8036-H
LS: TPCA8028-H
LS: TPCA8A04-H
CPU
HS: TPCA8030-H
LS: TPCA8036-H
LS: TPCA8028-H
LS: TPCA8A04-H
HS: TPC8037-H
LS: TPC8037-H
TPC8A03-H
HS: TPC8037-H
LS: TPC8037-H
HS: TPC8037-H
LS: TPC8037-H
HS: TPC8037-H
LS: TPC8037-H
HS: TPC8037-H
LS: TPC8037-H
HS: TPCP8005-H
LS: TPCP8005-H
Dual: TPC8216-H
P-ch: TPC6111 / TPCF8104
N-ch: TPC6011 / TPCF8002
P-ch: SSM3J117T / SSM3J321T
N-ch: SSM3K315T / SSM3K7002F
CMS16
P-ch: TPC8121 / 8118 / 8123
N-ch: TPC8030 / 8028
Power management switches
DC-DC converters
Load switches
LDO
LDO
Li-ion battery
Battery charger
USB charging
Control IC PA
CCD camera
module
Load switches
P-ch: SSM3J120TU
P-ch: SSM6J51TU
P-ch: SSM3J46CTB
Load switches
P-ch: SSM3J130TU
P-ch: SSM3J409TU
P-ch: SSM3J120TU
DC-DC converters
HS: SSM5G10TU
(P-ch + Schottky Barrier Diode)
LS: SSM5H12TU
(N-ch + Schottky Barrier Diode)
BB-IC
Power supply
IC
4-2 Application Examples and Block Diagrams
Cell Phone (Power Supply Circuit)
Notebook PC (Power Supply Circuit)
17
Ca t h MOSFET enes al) A Ii. H P/N-ch complemenla ~ VS Series (dual) ~ PS Series (dual) ~ SOP Selies (dual)
Notebook PCs
(Example using P-channel MOSFETs)
Cell Phones
Control IC
P+ P-
Dual N-ch MOSFET
• STP2 Series
• PS-8 (dual)
• Chip LGA
P- P+
Control IC
Microcontroller
Single P-ch MOSFET x 2
• SOP Advance
• SOP-8
TSON Advance
Single N-ch MOSFET x 2
• SOP Advance
• SOP-8
TSON Advance
Motors
P/N-ch complementary MOSFET
VS Series (dual)
PS Series (dual)
SOP Series (dual)
Controller
Interface
Power driver circuit
M
Protection
circuit
Pre-driver
4-2 Application Examples and Block Diagrams
Lithium-Ion Secondary Battery (Battery Protection Circuits)
Motor Driver (Power Driver Circuit)
Low-VDSS MOSFETs (in Small SMD Packages)
4
18
mar—c _ . / 2005 2005 2007 was 200 Drain Current (A) Foolprmt Area (mmz)
2005 2006 2007 2008 2009 2010
Ron*A (mOhm*mm2)
U-MOSIV
U-MOSV
U-MOSVI
U-MOSIII
U-MOSIV
5
10
15
20
25
30
0
U-MOSVI
Pch
Nch
Qsw (nC)
1015
N-ch, VDSS = 30 V
RDS(ON) (mΩ)
U-MOSIII-H
U-MOSV-H
U-MOSVI-H
U-MOSVII-H
1
10
30
3
0.1
1
10
100
001
01 1
0.1
Drain Current (A)
Footprint Area (mm2)
SOP-8
VS-6
VS-8
SOP Advance
STP
PS-8
TSSOP Advance
TSON Advance
STP2
TSSOP-8
S-Mini
SMV
USVESVCST3
CST6D
CST4 VESM SSM USM
TSM
UFV
UFM
UF6
US6
ES6
CST3B
Chip LGA
4-3 Low-VDSS MOSFET Roadmaps
Roadmap for Trench MOSFETs
High-Speed, Low-VDSS U-MOS Low-Ron Trench MOSFETs
Package Options
19
SH 4+ 'qmm Elm T ‘emmW I i H “w. *4 Hum
5 mm
6 mm
6 mm
5 mm 3.5 mm
4.65 mm
3.3 mm
3.3 mm
2.9 mm
0.65 mm
1.9 mm
2.9 mm
0.95 mm
2.8 mm
2.9 mm
0.65 mm
2.8 mm
2.1 mm
0.2 mm
2.0 mm
2.1 mm
0.425 mm
2.0 mm
2.1 mm
0.425 mm
2.0 mm
2.1 mm
0.425 mm
2.0 mm
1.6 mm
0.4 mm
1.6 mm
1.2 mm
0.2 mm
1.2 mm
2.1 mm
0.2 mm
2.0 mm
2.1 mm
0.2 mm
2.0 mm
1.59 mm
1.59 mm
0.6 mm
1.0 mm
0.8 mm
1.2 mm
0.8 mm
1.2 mm
2.8 mm
0.6 mm
2.9 mm
1.6 mm
0.2 mm
1.6 mm
1.6 mm
0.2 mm
1.6 mm
0.9 mm
1.0 mm
2.5 mm
0.5 mm
2.9 mm
2.8 mm
0.6 mm
2.9 mm
Thermally Enhanced Packages Compact Packages
Thermally-Enhanced Compact Packages
Ultra-Small Packages
S-Mini USM SSM VESM CST3 US6 USV ESV CST6D
0.2 W
7.3 mm2
0.2 W
4.2 mm2
0.1 W
2.6 mm2
SMV
8.1 mm2
0.15 W
1.4 mm2
0.1 W
0.6 mm2
0.2 W
4.2 mm2
0.2 W
4.2 mm2
0.15 W
2.6 mm2
0.14 W
1.4 mm 1.1 mm 0.9 mm 0.55 mm 0.4 mm 1.1 mm 1.1 mm 0.6 mm 0.4 mm
0.9 mm2
TSM UF6 UFV UFM ES6 CST3B CST4
8.1 mm24.2 mm24.2 mm24.2 mm22.6 mm21.0 mm2
0.75 W0.7 W 0.5 W 0.5 W 0.5 W 0.5 W 1.0 W 0.4 W
1.4 mm0.85 mm 0.75 mm 0.75 mm 0.75 mm 0.6 mm 0.5 mm 0.4 mm
1.0 mm2
Footprint
Area
Permissible Power
Dissipation
Height
(MAX)
Footprint
Area
Permissible Power
Dissipation
(Note)
(Note)
Height
(MAX)
Footprint
Area
Permissible Power
Dissipation
Height
2.8 W
(+47%)
1.0 mm
(–47%)
1.9 W
1.9 mm
2.3 W
(+21%)
0.8 mm
(–58%)
30 mm2
SOP Adv. SOP-8
TSSOP Adv.
TSON Adv.
30 mm216.3 mm2
(−46%)
1.9 W
0.9 mm
(–53%)
10.9 mm2
(−64%)
Footprint
Area
Permissible Power
Dissipation
Height
2.5 W
(+14%)
0.85 mm
2.2 W
0.85 mm
1.68 W
(–24%)
0.85 mm
5.5 mm2
(–32%)
VS-8 VS-6 PS-8
8.1 mm28.1 mm2
0.25 mm
(–71%)
Chip LGA
2.56 mm2
(–68%)
(Percentage relative to VS-6)
(Percentage relative to SOP-8)
Note: Mounted on FR4 Boad (25.4 x 25.4 mm)
Note: Mounted on FR4 Boad (25.4 x 25.4 mm)
Low-VDSS MOSFETs (in Small SMD Packages)
4
20
Control IC-side
(switch and high-side)
MOSFETs
Synchronous-side
(low-side)
MOSFET
Load
Vin Vout
L
Vcc
DS
SC
G
G
D
Control
IC
ton(High)
T
ton(Low)
Dead time 1 Dead time 2
VGS(High)
VDS(High)
IDS(High)
IDS(Low)
ISBD(SBD)
VDS
(Low+SBD)
VGS(Low)
High-side MOSFET: Turn-off loss
High-side MOSFET: Conducting loss
High-side MOSFET: Turn-on loss
Low-side MOSFET: Self-turn-on loss
Dead time: Diode loss
Key Parameters to Improve Efficiency
Synchronous-side MOSFET
Very low RDS (ON)
Reduction of the self-turn-on losses
Low Qrr
Low Cgd, Cgd/Cgs
Low rg
Optimized Vth
Shoot-through current control
Low Qg
Switch-side MOSFET
High-speed switching
Low Qsw
Low rg
Low RDS (ON)
Low-side MOSFET: Conducting loss
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
Power Dissipation (W)
Output Current (A)
Synchronous-side
(low-side) MOSFET
Switch-side
(high-side) MOSFET
51020
Conditions
• Input Voltage: 19 V
• Output Voltage: 1.5 V
• Frequency: 1 MHz
Efficiency
82.49%
Efficiency
85.13%
Efficiency
83.20%
Others (drive loss, etc.)
Conducting loss
Dead time loss (off)
Self-turn-on loss
Dead time loss (on)
Turn-on loss
Conducting loss
Turn-on loss
4-4 Low-VDSS, High-Speed MOSFETs
Synchronous Rectification DC-DC Converters – Block Diagram, Timing Chart and Power Loss Factors
Synchronous Rectification DC-DC Converters – Summary Results of Power Loss Simulation and Key Parameters for MOSFETs
Block Diagram Timing Chart
21
HHHH HHHH Htjtjtj Htjtjtj mnnm uuuu Efflclency Characterlstlcs l: 300 kHz, V\N= 19.5 V, Vow: 1.1 V so an as M 52 an 73 75 74 One low-slde MOSFET nigh-nu- uosm Lmtaidl umerT —TPCAEuaurH Up) npommw ml —TPCAEUSUVH Up) +TPCABDG€>H up) . —TPCA50237H Up) +TPCAaomH up) 5 u) 15 20 Output Current (A)
Efficiency Characteristics
f = 300 kHz, VIN = 19.5 V, VOUT = 1.1 V
Output Current (A)
74
76
78
80
82
84
86
88
90
0 5 10 15 20 25
TPCA8030-H (1p) + TPCA8028-H (1p)
TPCA8030-H (1p) + TPCA8036-H (1p)
TPCA8023-H (1p) + TPCA8019-H (1p)
High-side MOSFET Low-side MOSFET
One low-side MOSFET
6.0
5.0
1.0 Max
6.0
5.0
1.9 Max
SOP-8 SOP Advance
74
76
78
80
82
84
86
88
90
0 5 10 15 20 25
Output Current (A)
Efficiency (%)
Efficiency (%)
TPCA8030-H (1p) + TPCA8028-H (2p)
TPCA8030-H (1p) + TPCA8036-H (2p)
TPCA8023-H (1p) + TPCA8019-H (2p)
High-side MOSFET Low-side MOSFET
New
device
Conventional
device
New
device
Conventional
device
Two low-side MOSFETs
Synchronous Rectification DC-DC Converters – Efficiency Improvement by Thermally Enhanced Package and New Process Technology
Thermally Enhanced Package
New Process Technology
RDS(ON) Typ. @4.5 V (mΩ)
2.3
3.1
4.8
rg Typ. (Ω)
1.0
1.0
2.4
Cgd/Cgs Typ. (%)
6.8
6.6
12.7
Toshiba has developed the SOP Advance package with the same footprint area as the standard SOP-8 package. With an external
heatsink on the bottom, the SOP Advance package offers enhanced thermal characteristics, realizing a high power dissipation and
thus high-current capability. Unit: mm
Note 1: When mounted on a glass-epoxy board (25.4 mm x 25.4 mm x 0.8 mm) Note 2: Without chip resistance
Same footprint area as the SOP-8
Low profile, Thinner by 0.9 mm
High power dissipation
High current-carrying capacity
Low package resistance
30
1.9
65.8
18
1.6
30
1.0
44.6
40
0.5
(mm2)
(mm)
(˚C / W)
(A)
(mΩ)
Toshiba has developed a new process technology to further reduce an internal gate resistance (rg) and gate capacitance ratio
(Cgd/Cgs) for minimizing the self-turn-on loss while maintaining both the low ON-resistance and low gate charge characteristics.
Footprint Area
Total height (max)
Rth(ch-a) (t = 10
s)
(Note 1)
Current rating
Package resistance(Note 2)
Features of the SOP AdvanceSOP-8 SOP Advance
TPCA8028-H
(New generation)
TPCA8019-H
(One gen. ago)
TPCA8004-H
(Two gen. ago)
Low-VDSS MOSFETs (in Small SMD Packages)
22
4
I Lowrswde MOSFET turned on 0 Dead t MusFEr chum-l gun-m Endy mun. cuml 591 an L5: LA 05 nH Em army 1%) g E 8 34 Output cunem w
Current Current
Large lrr
LA
LS
Current
LA
LS
Low-side MOSFET turned on Dead time High-side MOSFET turned on
Using External SBD MOSFET with SBD (MOSBD)
20
10
0.0
-10
-20
691.01μ691.04μ691.07μ
time (s)
SBD current
MOSFET channel current
Body diode current
691.10μ
LS = LA= 0.5 nH
20
10
0.0
-10
-20
691.01μ691.04μ691.07μ
time (s)
SBD current
MOSFET channel current
Body diode current
691.10μ
LS = LA= 0.01 nH
Efficiency Characteristics
f = 300 kHz, VIN = 19.5 V, VOUT = 1.1 V
Efficiency (%)
74
76
78
80
82
84
86
88
90
0 5 10 15 20 25
Output Current (A)
TPCA8030-H (1p) + TPCA8A04-H (2p)
TPCA8030-H (1p) + TPCA8A02-H (2p)
TPCA8030-H (1p) + TPCA8019-H (2p)
High-side MOSFET Low-side MOSFET
Two low-side MOSFETs
Efficiency (%)
74
76
78
80
82
84
86
88
90
0 5 10 15 20 25
Output Current (A)
TPCA8030-H (1p) + TPCA8A04-H (1p)
TPCA8030-H (1p) + TPCA8019-H (1p)
High-side MOSFET Low-side MOSFET
MOSBD
Standard
MOSFET
One low-side MOSFET
MOSBD (For heavy-load
applications)
MOSBD (For light-load
applications)
Standard MOSFET
Synchronous Rectification DC-DC Converters – MOSBD (MOSFET with SBD)
When an SBD is added externally, the SBD can’t function fully
due to the influence of wire inductances (Ls and LA); thus a body
diode current during the dead time becomes larger and causes
the following penalties.
A MOSFET with SBD using a monolithic structure reduces a wire inductance (LA) and a parasitic inductance (LS). This structure makes
it possible for the SBD to function fully and to reduce losses.
MOSFET with SBD (MOSBD)
1: Increase in the conducting loss of the body diode.
2: Increase in the reverse recovery loss due to high di/dt.
3: Induces a self-turn-on phenomenon.
Current Waveform Simulation
External SBD
23
TPCA8011-H
TPC6007-H
TPC6109-H
TPC8216-H
TPCP8005-H
TPCC8003-H
TPCM8003-H
TPCM8004-H
TPCM8002-H
TPC8021-H
TPC8031-H
TPC8037-H
TPC8038-H
TPC8032-H
TPC8033-H
TPC8039-H
TPC8034-H
TPC8036-H
TPC8035-H
TPCA8023-H
TPCA8030-H
TPCA8031-H
TPCA8018-H
TPCA8039-H
TPCA8036-H
TPCA8012-H
TPCA8019-H
TPCA8028-H
TPC6006-H
TPC8022-H
TPCA8020-H
TPCA8014-H
TPCA8027-H
TPCA8015-H
20
30
–30
30
40
40
5
–5
6.4
11
22
22
22
±20
26
13
12
21
24
30
11
11
12
12
15
17
17
18
18
18
21
24
24
30
34
38
40
45
50
3.9
7.5
7.5
30
30
35
N-ch Single
P-ch Single
N-ch Dual
N-ch Single
SOP Advance
VS-6
SOP-8
PS-8
SOP-8
SOP Advance
VS-6
SOP Advance
3.57.5
79
83
23.0
15.7
19.3 16.9 4.2
15.7
13.4
8.2
25
16.1
13.9
13.9
8.6
7.2
6.9
4.5
5.1
3.6
15.7
13.4
13.4
8.2
6.6
4.8
6.8
4.1
3.2
100
35
35
14
7.9
10
54
16
1.8
4.8
3.4
5.0
5.0
5.0
9.3
3.6
5
5
5
8.4
8.5
16
17
5.0
5
5
9.3
8.6
13
11.0
15.5
20
1.3
3.5
3.5
7.4
8.1
13
13
9.6
59
20
12.9
12.9
11
6.2
6.5
6.0
3.5
3.2
12.9
11.0
11.0
6.2
5.7
4.2
4.9
3.1
2.8
75
27
27
9
5.4
4.5
5.3
17
13.3
11.4
11.4
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSVI-H
U-MOSV-H
U-MOSVI-H
TPCC8001-H 10.6 8.3 7.1 U-MOSV-H
TPCC8002-H TSON Advance 10.6 8.3 7.1 U-MOSV-H
TPCC8006-H 9.3 8.0 7.4 U-MOSVI-H
TPCC8005-H 7.4 6.4 9.1 U-MOSVI-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
TPC8040-H 13 11.1
5.1
9.7 U-MOSVI-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
24 13.4 5
11.0
U-MOSV-H
TPCA8040-H 23 10.8 5.79.4
U-MOSVI-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSVI-H
U-MOSVI-H
TPCA8060-H 45
±12
3.9 17
3.4 U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
TSSOP Advance
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSIII-H
U-MOSIII-H
TPC8052-H 13.3 6.6
11.5
TPC8047-H 16 SOP-8 8.8 11
7.6
TPC8046-H 18 6.6 15
5.7
TPC8045-H 18 4.4 23
3.9
U-MOSIII-H
TPCA8052-H 20 13.1 6.611.3 U-MOSVI-H
U-MOSIII-H
U-MOSIII-H
TPCA8047-H 32 8.5 7.3 13 U-MOSVI-H
U-MOSIII-H
TPCA8046-H 38 6.3 15
5.4 U-MOSVI-H
TPCA8045-H 46 4.1 23
3.6 U-MOSVI-H
Absolute Maximum Ratings
Part Number Circuit
Configuration Package
RDS(ON)
Max (m
Ω)
4.5 V
2.5 V
10 V
Qsw Typ.(nC)
@VDS =
VDSS
x 0.8
Series
VDSS
(V)
VGSS
(V)
ID(A)
: No protection Zener diode between gate and source
High-Speed MOSFET Offerings
Low-VDSS MOSFETs (in Small SMD Packages)
4
24
TPC8406-H
TPC8218-H
TPCA8016-H
TPCP8003-H
TPC8214-H
TPCA8022-H
TPCA8009-H
TPCA8010-H
TPCA8008-H
TPC8A03-H
TPC8A04-H
TPCA8A02-H
TPCA8A04-H
TPCP8103-H
TPC8116-H
TPCA8107-H
60
80
100
150
200
250
30
–40
40
–40
N-ch Dual
N-ch Dual
N-ch Single
N-ch Single
MOSBD
P-ch Single
N-ch/P-ch Dual
SOP-8
PS-8
SOP-8
SOP Advance
SOP Advance
SOP Advance
SOP Advance
SOP-8
SOP Advance
PS-8
SOP-8
SOP Advance
SOP-8
56
26
190
190
7.0
4.5
6.7
4.1
54
37
37
35
37
2.9
6.6
2.0
2.0
14
3.7
3.7
3.7
8.4
13.4
13.4
3.5
8.6
6.5
9.7
9.7
9.7
50
21
26
180
180
350
450
580
5.6
3.6
5.3
3.2
40
30
30
30
27
TSON Advance
U-MOSIII-H
TPC8053-H 24.2 6.722.5
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
TPC8050-H 15.6 9.2
14.5
TPC8049-H 11.5 13
10.7
TPC8048-H 7.4 17
6.9
TPCA8053-H 24 6.9
22.3
TPCA8050-H 15.3 1014.2
U-MOSIII-H
TPCA8049-H
SOP Advance
11.2 13
10.4
U-MOSVI-H
TPCA8048-H 7.1 19
6.6
U-MOSVI-H
TPC8051-H SOP-8 10.1 16
9.7
U-MOSVI-H
TPCA8051-H SOP Advance 9.8 18
9.4
U-MOSVI-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
π-MOSV
π-MOSV
π-MOSV
TPCP8A05-H PS-8 21.9 2.7
17.5
U-MOSV-H
TPCC8A01-H 12.6 4.1
9.9
U-MOSV-H
TPC8A05-H 17.6 3.713.3
U-MOSV-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSV-H
U-MOSV-H
TPCA8A05-H 17.2 3.712.9
U-MOSV-H
U-MOSV-H
TPCA8A08-H 5.1 11
3.9
U-MOSV-H
U-MOSV-H
TSSOP Advance
TPCM8A05-H
–6.5
3.8
25
2.2
2.2
22
7
5.5
4
17
TPC8A06-H 12.9 4.510.1
U-MOSV-H
12
18
34
44
–4.8
–7.5
–7.5
6.5
9
TPC8213-H
64 2.6
57
U-MOSVI-H
5
11
13
16
15
24
28
35
13
28
8
21
10
20
38
20
±20
17.2 3.7
12.9 U-MOS
V
-H
Absolute Maximum Ratings
Part Number Circuit
Configuration Package
RDS(ON)
Max (m
Ω)
4.5 V 10 V
Qsw Typ.(nC)
@VDS
=
VDSS
x 0.8
Series
VDSS (V) VGSS
(V)
I
D
(A)
: No protection Zener diode between gate and source
25
Control IC
LiB
PCM
Lithium-Ion Secondary
Battery Protection
2003
2004
2006
TSSOP-8 (6.4 mm x 3.3 mm x 0.9 mm)
4.0-
3.5 mm
3.0-
3.5 mm
3.0 mm
STP (3.8 mm x 2.0 mm x 0.6 mm)
STP2 (3.8 mm x 1.6 mm x 0.6 mm)
SOP-8
STP
For Laptop PCs
For Cell Phones, Digital Cameras
and PVC
2003 2004 2005 2006 2007 2008 2009 2010
SOP Advance
PS-8
TSSOP-8
P-ch U-MOSIV U-MOSVU-MOSVI
U-MOSIV U-MOSVIU-MOSV
Chip LGA
N-ch
TSSOP Advance
STP2
MOSFET + Control IC
U-MOSVIU-MOSIV
N-ch
TSON Advance
Lithium-Ion Battery Protection Circuit Trend
MOSFET Roadmap
4-5 Low-V
DSS
, Low-R
DS(ON)
MOSFETs (for Lithium-Ion Battery Protection)
26
Low-VDSS MOSFETs (in Small SMD Packages)
4
TPCA8026
TPCA8042
TPCA8025
TPCA8024
TPC8210
TPC8211
TPC8207
TPC8208
TPC8027
TPC8042
TPC8029
TPC8028
TPC8026
TPC8041
TPC8030
TPC8025
TPCP8202
TPCT4204
TPCT4203
N-ch Dual
N-ch Dual
N-ch Dual
N-ch Single
N-ch Single
N-ch Single
SOP-8
SOP Advance
TSON Advance
TSON Advance
PS-8
STP2
Chip LGA
49
52
39
70
30
32
39
24
14.5
17
13.5
10
8
7
6.5
5.5
50
44
20
7.8
6.0
5.7
4.5
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIV
20
30
30
30
30
30
30
30
30
30
30
20
20
30
30
30
30
30
30
6
6
5.5
11
11
13
13
18
18
18
18
5
6
5.5
8
35
40
45
45
Absolute Maximum Ratings
Package
Circuit
Configuration
RDS(ON) Max (mΩ)
2.5 V 4 V 4.5 V
4.5 V
10 V Series
VDSS (V) VGSS (V) ID(A)
: No protection Zener diode between gate and source
: Under development
TPC8115
TPCA8105
TPCA8106
TPCA8103
TPCM8102
TPC8405
TPC8117
TPC8114
TPC8118
TPC8122
TPC8113
TPC8111
TPC8121
TPC8119
–10
–10
–11
–11
–11
–12
–13
–18
–18
–18
6
–4.5
–25
–25/+20
–25/+20
–6
–40
–40
P-ch Single
N-ch/P-ch Dual
P-ch Single
SOP-8
SOP Advance
TSSOP Advance
14
51
28
24
18
18
16.5
15
6.8
7.9
33
42
16
33
6.8
7.8
10 —
13
12
12
10
8
7
4.5
3.9
26
33
7.7
4.2
3.7
U-MOSIV
U-MOSV
U-MOSV
U-MOSIV
U-MOSIV
U-MOSV
12.5 9 U-MOSVI
U-MOSV
U-MOSIV
U-MOSV
U-MOSIII
U-MOSIV
U-MOSV
U-MOSIV
U-MOSIV
U-MOSV
–20
–30
–30
–30
–30
–30
TPC8123 –11
–30
–30
–30
–30
TPC8120
4.2 3.2 U-MOSVI
–30
30
–30
–30
–12
–30
–30
Absolute Maximum Ratings
Part Number
Part Number
Package
Circuit
Configuration
RDS(ON) Max (mΩ)
2.5 V 4 V 10 V Series
VDSS (V) VGSS (V) ID(A)
: No protection Zener diode between gate and source
TPCL4201 52 31 U-MOSV
20 6
TPCL4203 55 36 U-MOSV
24 6
TPCL4202 64 40 U-MOSV
30 6
23
8.5
22 U-MOSV
–30 –18 12
33.2 U-MOSV
–30 –15
— 18.9
U-MOSIV
30 25 12.8 6.8
TPCC8007
TPCC8008
TPCC8102
TPCC8103
(4.6) U-MOSIV
20 27 (8.7)
9
TPCP8006 10 U-MOSIV
20 9.1 13.7 —
TPCP8004 14 U-MOSIV
30 8.3
9
7
6.6
4.3
3.8
3.4
2.7
36
15
4.3
3.5
3.3
2.2
20
±12
±12
±12
±12
±12
±20
±12
±12
±12
±25
±20
±20
±20
±25
±20
±20
±20
±20
±20
±20
±12
±12
±20
±20
±20
±20
±20
±20
±8
±20
±20
±20
±20
±20
±20
±20
±20
±20
±8
±20
±20
±20
±20
Low-ON-resistance N-Channel Power MOSFETs
Low-ON-resistance P-Channel Power MOSFETs
27
E (SOT-563) E2153 .6 ass 20 n7 T‘ffi’fi qum
ES6
(SOT-563)
1.6
1.6
0.55
UFM
2.0
2.1
0.7
UF6
2.0
2.1
0.7
US6(SOT-363)
2.0
2.1
0.9
2.9
2.8
0.7
TSM
CST3B
0.8
1.2
0.48
1.35
1.0
0.45
0.5
0.3
0.5
0.5
0.65 0.65
1.9
0.8
0.8
1.9
0.65
0.45
0.65
0.8
0.95 0.95
2.4
1.0
0.8
0.95 0.95
2.4
1.0
2.9 ±0.2 1.1
2.5
S-Mini
TOP VIEW
0.65
0.25
0.25
0.7
0.45
0.65
D
GS
Part NumberPackage
RDS(ON) Max (mΩ)Ciss
(pF)
*Internal
Connections
Series Land Pattern
Example
VDSS
(V)
VGSS
(V)
ID
(A)
SSM6J212FE
SSM6J53FE
SSM6J206FE
SSM6J205FE
SSM6J26FE
SSM6J23FE
SSM6J25FE
SSM6J207FE
SSM3J132TU
SSM3J130TU
SSM3J120TU
SSM3J129TU
SSM3J115TU
SSM3J110TU
SSM3J109TU
SSM3J114TU
SSM3J108TU
SSM3J113TU
SSM3J111TU
SSM3J117TU
SSM3J118TU
SSM3J112TU
SSM6J409TU
SSM6J51TU
SSM6J50TU
SSM6J21TU
SSM6J401TU
SSM6J402TU
SSM6J08FU
SSM6J06FU
SSM6J07FU
SSM3J307T
SSM3J321T
SSM3J326T
SSM3J13T
SSM3J312T
SSM3J304T
SSM3J317T
SSM3J313T
SSM3J01T
SSM3J02T
SSM3J314T
SSM3J14T
SSM3J306T
SSM3J305T
SSM3J327F
SSM3J325F
–20
–20
–20
–20
–20
–12
–20
–30
–12
–20
–20
–20
–20
–12
–20
–20
–20
–20
–20
–30
–30
–30
–20
–12
–20
–12
–30
–30
–20
–20
–30
–20
–20
–30
–12
–12
–20
–20
–20
–30
–30
–30
–30
–30
–30
–20
–20
±8
±8
±8
±8
±8
±8
±12
±20
±5
±8
±8
±8
±8
±8
±8
±8
±8
±12
±12
±20
±20
±20
±8
±8
±10
±12
±20
±20
±12
±12
±20
±8
±8
±12
±8
±8
±8
±8
±8
±10
±10
±20
±20
±20
±20
±8
±8
–3.3
–1.8
–2.0
–0.8
–0.5
–1.2
–0.5
–1.4
–5.0
–4.4
–4.0
–4.6
–2.2
–2.3
–2.0
–1.8
–1.8
–1.7
–1.0
–2.0
–1.4
–1.1
–9.5
–4.0
–2.5
–3.0
–2.5
–2.0
–1.3
–0.65
–0.8
–5.0
–5.2
–5.6
–3.0
–2.7
–2.3
–3.6
–1.6
–1.7
–1.5
–3.5
–2.7
–2.4
–1.7
–3.5
–2.0
108
364
40.4
63.2
140
137
353
526
72.3
150
83
137
242
362
73.7
204
320
460
980
28.3
41.1
78
88
193
240
300
321
363
46.3
85
205 (@2.0V)
460 (@2.0V)
56
88
115
180 (@2.0V)
237
297
306
640
170
252
45.6
136
186
306
330
210
430
21.7
31
49
62
125
145
172
199
230
249
680
30.2
54
100
88
260
700
40
62
62.5
95
142
169
144
396
600
700
125
191
43.4(@4.5V)
130
234
230
160
260
491
17.8(@4.5V)
25.8(@4.5V)
38
46(@4.5V)
98
94
130
149
158
169
480
225
480
790
22.1(@4.5V)
64 (@4.5V)
50
145
225
180
500
800
31(@4.5V)
46(@4.5V)
45.7(@4.5V)
70
91
127
107(@4.5V)
268
400
500
100
170
225
477
95(@4.5V)
155(@4.5V)
834
568
335
250
250
420
218
137
2700
1800
1484
640
568
550
335
331
250
370
160
280
137
86
1100
1700
800
1300
730
280
370
160
130
1170
640
640
890
550
335
390
170
240
150
505
413
280
137
290
226
U-MOSVI
U-MOSIV
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSII
U-MOSVI
U-MOSVI
U-MOSIV
U-MOSV
U-MOSIV
U-MOSIII
U-MOSIII
U-MOSIV
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSII
U-MOSII
U-MOSII
U-MOSV
U-MOSIV
U-MOSIV
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSII
π-MOSVI
π-MOSVI
U-MOSV
U-MOSV
U-MOSVI
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
π-MOSVI
π-MOSVI
U-MOSIII-H
U-MOSII
U-MOSII
U-MOSII
U-MOSVI
U-MOSVI
SSM3J46CTB –20 ±8 –2.0 250 178 133 103
(@4.5 V) 290 U-MOSVI
VGS =
l 1.5 V l
VGS =
l 1.8 V l
VGS =
l 2.5 V l
VGS =
l 4.0 V l
Unit: mm
:Under development
Semi-Power P-Channel Single MOSFETs
4-6 Semi-Power MOSFET Offerings
* The internal connection diagrams only show the general configurations of the circuits.
Low-VDSS MOSFETs (in Small SMD Packages)
4
28
1.35
1.0
0.45
0.5
0.3
0.5
0.5
0.65 0.65
1.9
0.8
0.8
0.95 0.95
2.4
1.0
0.8
1.9
0.65
0.45
0.65
TOP VIEW
S
DD
G
0.5
0.2
0.3
0.75
ES6
(SOT-563)
1.6
1.6
0.55
UFM
2.0
2.1
0.7
TSM
2.9
2.8
0.7
2.0
2.1
0.7
UF6
2.0
2.1
0.9
US6(SOT-363)
CST4
0.8
1.2
0.38
Part NumberPackage
R
DS(ON)
Max (mΩ)Ciss
(pF)
*Internal
Connections
Series Land Pattern
Example
VDSS
(V)
VGSS
(V)
ID
(A)
SSM6K211FE
SSM6K203FE
SSM6K202FE
SSM6K204FE
SSM6K208FE
SSM6K25FE
SSM6K24FE
SSM6K22FE
SSM6K210FE
SSM6K30FE
SSM6K31FE
SSM3K123TU
SSM3K121TU
SSM3K104TU
SSM3K119TU
SSM3K102TU
SSM3K122TU
SSM3K101TU
SSM3K127TU
SSM3K116TU
SSM3K131TU
SSM3K124TU
SSM3K105TU
SSM3K128TU
SSM3K107TU
SSM3K106TU
SSM6K403TU
SSM6K404TU
SSM6K405TU
SSM6K18TU
SSM6K406TU
SSM6K34TU
SSM6K407TU
SSM6K32TU
SSM6K08FU
SSM6K06FU
SSM6K07FU
SSM3K310T
SSM3K309T
SSM3K301T
SSM3K316T
SSM3K01T
SSM3K02T
SSM3K315T
SSM3K14T
SSM3K320T
SSM3K303T
SSM3K12T
SSM3K318T
20
20
30
20
30
20
30
20
30
20
20
20
20
20
30
20
20
20
30
30
30
30
30
30
20
20
20
20
20
20
30
30
60
60
20
20
30
20
20
20
30
30
30
30
30
30
30
30
60
±10
±10
±12
±10
±12
±12
±12
±12
±20
±20
±20
±10
±10
±12
±12
±12
±10
±12
±12
±12
±20
±20
±20
±20
±20
±20
±10
±10
±10
±12
±20
±20
±20
±20
±12
±12
±20
±10
±12
±12
±12
±10
±10
±20
±20
±20
±20
±20
±20
3.2
2.8
2.3
2.0
1.9
0.5
0.5
1.4
1.4
1.2
1.2
4.2
3.2
3.0
2.5
2.6
2.0
2.2
2.0
2.2
6.0
2.4
2.1
1.5
1.5
1.2
4.2
3.0
2.0
4.0
4.4
3.0
2.0
2.0
1.6
1.1
1.5
5.0
4.7
3.5
4.0
3.2
2.5
6.0
4.0
4.2
2.9
3.0
2.5
118
153
307
66
140
304
66
147
307
66
82
106
145
214
296
395
43
93
110
134
154
211
230
286
43
100
214
210 (@2.0 V)
43
47
110
131
59
76
101
164
177
190
180
230
32
63
74
90
99
161
138
167
135
32
70
164
54
140
210
32
35
74
87
150
250
47(@4.5 V)
61
85
126
133
145
145
170
371
420
540
28
48
56
74
71
123
103
123
100
41.5(@4.5 V)
120
200
360
410
530
28
55
126
40
38.5 (@4.5 V)
77 (@4.5 V)
440
440
105
160
220
28
31
56
65(@4.5 V)
120
200
41.5(@4.5 V)
67
77(@4.5 V)
120
175
145(@4.5 V)
510
400
270
195
123
268
245
125
57
60
36
1010
400
320
270
268
195
125
123
245
450
180
102
57
60
36
1050
400
195
1100
490
470
150
140
306
125
102
1120
1020
320
270
152
115
450
460
190
180
120
235
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
π-MOSVII
π-MOSVII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIV
π-MOSVII
π-MOSVI
U-MOSIII
π-MOSVII
π-MOSVII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIV
U-MOSIII
π-MOSV
π-MOSV
U-MOSII
π-MOSVI
π-MOSVI
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
π-MOSVI
π-MOSVI
U-MOSIV
U-MOSII
U-MOSIV
π-MOSVII
π-MOSVII
U-MOSIV
SSM4K27CT 20 ±12 0.5 390 260 205 174 U-MOSIII
V
GS =
l 1.5 V l
V
GS =
l 1.8 V l
V
GS =
l 2.5 V l
V
GS =
l 4.0 V l
Unit: mm
Semi-Power N-Channel Single MOSFETs
* The internal connection diagrams only show the general configurations of the circuits.
29
ES6
(SOT-563)
1.35
1.0
0.45
0.5
0.3
0.5
1.6
1.6
0.55
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
0.8
1.9
0.65
0.45
0.65
2.0
2.1
0.7
UF6
0.8
1.9
0.65
0.45
0.65
2.0
2.1
0.7
UFV
Part NumberPolarityPackage
RDS(ON) Max (mΩ)Ciss
(pF)
*Internal
Connections
Series Land Pattern
Example
VDSS
(V)
VGSS
(V)
ID
(A)
SSM6N39TU
SSM6N29TU
SSM6N25TU
SSM6N24TU
SSM6N40TU
SSM6P54TU
SSM6P39TU
SSM6P28TU
SSM6P26TU
SSM6P25TU
SSM6P40TU
20
20
20
30
30
–20
–20
–20
–20
–20
–30
20
–20
20
–20
20
–20
20
–20
30
–20
30
–30
±10
±12
±12
±12
±20
±8
±8
±8
±8
±12
±20
±10
±8
±12
±8
±12
±8
±12
±12
±12
±12
±20
±20
1.6
0.8
0.5
0.5
1.6
–1.2
–1.5
–0.8
–0.5
–0.5
–1.4
1.6
–1.5
0.8
–0.8
0.5
–0.5
0.5
–0.5
0.5
–0.5
1.6
–1.4
247
555
247
190
235
395
350
430
460
980
190
430
235
460
395
980
395
139
178
190
180
228
294
306
330
430
139
294
178
306
190
330
190
430
180
430
119
143
145
145
182
213
234
230
260
403
119
213
143
234
145
230
145
260
145
260
182
403
260
268
268
245
180
331
250
250
250
218
120
260
250
268
250
268
250
268
218
245
218
180
120
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIV
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
SSM6L39TU
SSM6L13TU
SSM6L10TU
SSM6L11TU
SSM6L12TU
SSM6L40TU
SSM6P41FE –20P-ch x 2
N-ch x 2
P-ch x 2
N-ch + P-ch
P-ch + N-ch
(Load Switch)
±8 –0.72 1040 670 440 300
(@4.5 V)
110 U-MOSV
SSM6N42FE20
N-ch x 2 ±10 0.77 630 460 340 260
(@4.5 V)
95 U-MOSIII
VGS =
l 1.5 V l
VGS =
l 1.8 V l
VGS =
l 2.5 V l
VGS =
l 4.0 V l
Part Number
Polarity
Package RDS(ON) Max (mΩ)
SBDMOSFET
Ciss
(pF)
*Internal
Connections
Series
VDSS
(V)
VR
(V)
IO
(A)
VF Max (V)
@I
F
(A)
VGSS
(V)
ID
(A)
SSM5G09TU
SSM5G02TU
SSM5G10TU
SSM5G04TU
SSM5G11TU
SSM5G01TU
SSM5H10TU
SSM5H12TU
SSM5H05TU
SSM5H08TU
SSM5H03TU
SSM5H11TU
SSM5H01TU
SSM5H07TU
–12
–12
–20
–12
–30
–30
20
30
20
20
12
30
30
20
±8
±12
±8
±12
±20
±20
±10
±12
±12
±12
±12
±20
±20
±20
–1.5
–1.0
–1.5
–1.0
–1.4
–1.0
1.6
1.9
1.5
1.5
1.4
1.6
1.4
1.2
247
430
190
296
200
240
294
420
139
177
220
220
130
160
213
240
403
800
119
133
160
160
300
182
450
540
550
310
250
170
120
86
260
123
125
125
125
180
106
36
U-MOSII
U-MOSII
U-MOSIII
U-MOSII
U-MOSIII-H
U-MOSII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSII
U-MOSIII
U-MOSII
π-MOSVII
P-ch+
SBD
N-ch+
SBD
VGS =
l 1.5 V l
VGS =
l 1.8 V l
VGS =
l 2.5 V l
VGS =
l 4.0 V l
12
12
20
12
30
20
20
30
12
20
12
30
20
12
0.5
0.5
0.7
0.5
0.7
0.5
0.7
0.7
0.5
0.5
0.5
0.7
0.5
0.5
0.43
0.43
0.39
0.43
0.41
0.45
0.39
0.41
0.43
0.45
0.43
0.41
0.45
0.43
0.5
0.5
0.5
0.5
0.5
0.3
0.5
0.5
0.5
0.3
0.5
0.5
0.3
0.5
MOSFET with a Schottky Barrier Diode
Land Pattern
Example
Unit: mm
:Under development * The internal connection diagrams only show the general configurations of the circuits.
* The internal connection diagrams only show the general configurations of the circuits.
Unit: mm
Semi-Power Dual MOSFETs
–20
20
–20
20
±8
±10
±8
±10
–1.8
0.1
–1.8
0.1
364
15
Ω
15
Ω
204
335
136
4
Ω
180
4
Ω
3
Ω
144
3
Ω
568
9.3
335
9.3
U-MOSIV
π-MOSVI
U-MOSIII
π-MOSVI
SSM6E02TU
SSM6E03TU
SSM6E01TU
12
20
±12
10
1.0
0.05
240
10 Ω
160
310
11
U-MOSIII
π-MOSVI
30
Low-VDSS MOSFETs (in Small SMD Packages)
4
flu @
SMV
1.0
2.4
0.95 0.95
0.8
0.6
0.8
2.9
2.8
1.1
Features
• Zener diode between gate and source for all products
• Thin package, with a board mounting height as low as 0.85 mm (max)
Part Number
Polarity
Package
R
DS(ON) Max (m
Ω)
SBD
MOSFET
Ciss
(pF)
*Internal
Connections
Series
Land Pattern
Example
V
DSS
(V)
VR
(V)
IO
(A)
VF Max (V)
@IF
(A)
V
GSS
(V)
I
D
(A)
SSM5H14F 30 ±12 3.0 138 94 78 270 U-MOSIII 45 0.1 0.6 0.1
N-ch+
SBD
VGS =
l 1.5 V l
VGS =
l 1.8 V l
VGS =
l 2.5 V l
VGS =
l 4.0 V l
Product Offerings
—2432
37 17 1400 S2C
14 640 S2L
20 32
—28
79
35
41
19 1420
2.8 240
S2E
S2G
110 160 300 6470 S3E
—55
100 180 9.8 680 S3G
40
TPC6004
TPC6011
TPC6005
TPC6007-H
TPC6103
TPC6105
TPC6107
TPC6111
59
60
83
100
57 80
7.2
13
471
570
S3J
S3H
TPC6108
TPC6109-H
N-ch
Single
P-ch
Single
U-MOSIII
U-MOSIII
U-MOSIII-H
20
30
30
30
–20
–12
–20
–20
–30
–30
40
6
6±20
±12
±12
±12
±20
±20
±20
±20
±8
±8
±8
6
5
–2.7
–5.5
–4.5
–5.5
–5
–4.5
3.9 75
54
100
2.4 251 S2F
TPC6006-H U-MOSIII-H
U-MOSIII
35 55 90 20 1520 S3C U-MOSIII
U-MOSIV
10 700 S3L U-MOSV
U-MOSIII-H
U-MOSIV
U-MOSIV
VDSS (V) VGSS (V) ID (A) 10 V 4.5 V 2.5 V 2.0 V 1.8 V Marking SeriesPart Number Absolute Maximum Ratings
Circuit
Configuration
RDS(ON) Max (mΩ)Ciss Typ.
(pF)
Qg Typ.
(nC)
VS-6 Series … [Part Number: TPC6xxx]
: No protection Zener diode between gate and source : Under development
: No protection Zener diode between gate and source
VS-8 Series … [Part Number: TPCF8xxx]
• Ultra-low ON-resistance achieved by employing the U-MOS process
• Thin package, with a board mounting height as low as 0.85 mm (max)
• 32% reduction in mounting area compared with the VS-6 (TSOP-6) Series, due to the use of
a high-density flat package
• PD = 2.5 W @ t = 5 s when the device is mounted on a glass epoxy board
Product Offerings
Features
±20
±20
±10
±12
±8
±8
±20
±20
±20
±12
±8
±8
±8
±8 U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIV
U-MOSIII
U-MOSIII
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIII
U-MOSIV
U-MOSIV
U-MOSIII
U-MOSIII
TPCF8002
N-ch Single
23 31 — —
TPCF8101 —2840 85 18 1600
TBD TBD
F3A
F2B
TPCF8103 110 160 — 300 6470 F3C
TPCF8102 —3041 90 19 1550 F3B
TPCF8104 28 38 34 1760 F3D
TPCF8201
N-ch Dual
49 66 100 7.5 590 F4A
TPCF8301 110 160 — 300 6 470 F5A
TPCF8302 59 95 200 11 800 F5B
TPCF8303 58 87 250 11 860 F5C
TPCF8304 72 105 14 600 F5D
50 77 ——10 470
72 105
14 600
TPCF8A01
N-ch + SBD
49 66 7.5 590 F7A
TPCF8B01
30
–12
–20
–20
–30
20
–20
–20
–20
–30
30
–30
20
–20
6
–6
–2.7
–6
–6
3
–2.7
–3
–3
–3.2
4
–3.2
3.0
–2.7
P-ch + SBD
110 160
100
300 6470 F8A
P-ch Dual
TPCF8402 F6B
N-ch + P-ch
P-ch Single
10 V 4.5 V 2.5 V 2.0 V 1.8 V Marking SeriesPart Number Absolute Maximum Ratings
Circuit
Configuration
VDSS (V) VGSS (V) ID (A)
RDS(ON) Max (mΩ)Ciss Typ.
(pF)
Qg Typ.
(nC)
Unit: mm
* The internal connection diagrams only show the general configurations of the circuits.
MOSFET with a Schottky Barrier Diode
31
• Same mounting area as for the VS-6 (TSOP-6) Series
• Using flat leads and the latest U-MOS process (U-MOSIV), the PS-8 Series offers a 70% reduction in
RDS(ON) compared with the VS-6 Series.
PS-8 Series … [Part Number: TPCP8xxx]
Chip LGA Series ... [Part Number: TPCL4xxx]
Chip-scale package for high-density board assembly (58% reduction in mounting area compared
with the STP2 package)
Product Offerings
Features
: No protection Zener diode between gate and source
TPCP8201 30 4.2 50 77 U-MOSIII
U-MOSIII
U-MOSIII
TPCP8401 20 0.1 —— 4Ω
TPCP8402
–12 –5.5 —38
77
58 103
TPCP8J01
30 4.2 50
–30 –3.4 72 105 U-MOSIV
U-MOSV
–32 –5.5 35
U-MOSIV
50 0.1
——
U-MOSIV + Bip-Tr
N-ch/P-ch
Load Switch
TPCP8202 30 5.5 —23 39— U-MOSIV
N-ch Dual
TPCP8203 40 4.7 40 60 U-MOSIII
TPCP8301 –20 –5 —31 60— U-MOSIV
TPCP8302 –20 –5 —— 45 95 U-MOSIV
TPCP8303 –20 –3.8 —40 57—
P-ch Dual
P-ch Single
TPCP8006 20 9.1 — 13.7
N-ch Single
N-ch Single
MOSBD
MOSBD
TPCP8001-H 30 7.2
30 8.3
30 11
16 25
10
—— U-MOSIII-H
U-MOSIV
8.5 14.5 — — U-MOSIV
12.9 15.7 U-MOSV-H
TPCP8101
TPCP8103-H
–20 –5.6
–4.8 40 54 U-MOSIII-H
——30 41 90 U-MOSIII
TPCP8004
TPCP8005-H
30 8 17.5 21.9 U-MOSV-H
TPCP8A05-H
TPCP8003-H 100 2.2 180 190
—— U-MOSIII-H
TPCP8102 –20 –7.2 —18 30—
U-MOSIV
N-ch + P-ch
U-MOSIII
TPCP8403 60 —
40 4.7 40
–40
–40
–3.4 70 105 U-MOSIII
N-ch + P-ch
P-ch + NPN
π-MOSVI
VDSS (V) VGSS (V) ID (A)
RDS(ON) Max (mΩ)
10 V 4.5 V 2.5 V
U-MOSIV
TPCP8404 100 —
30 4 50
–30 –4 50 100
3Ω
49
105
180
33
4 V
——
10
20
10
14
34
28
16
20
20
10
22
11
26
20
19
19
16
7.5
33
16
15
4.6
13
470
1520
470
600
1760
2150
770
1500
1500
640
1480
640
1270
1433
800
1550
1300
360
2560
770
680
190
510 U-MOSV
N-ch + P-ch
1.8 V SeriesPart Number Absolute Maximum Ratings Circuit
Configuration
Product Offerings
Features
TPCL4201
TPCL4203
20
24
6
6
U-MOSV
N-ch Dual
TPCL4202 30 6
52
(55)
(64)
11.5
(10)
(10)
720
(685)
(780) U-MOSV
U-MOSV
VDSS (V) VGSS (V) ID (A)
RDS(ON) Max (mΩ)
33
(42)
(38)
4 V
31
(40)
(36)
4.5 V 2.5 V
44
(46)
(50)
3.1 V SeriesPart Number Absolute Maximum Ratings Circuit
Configuration
Ciss Typ.
(pF)
Qg Typ.
(nC)
Ciss Typ.
(pF)
Q
g
Typ.
(nC)
±8
±20
±20
±20
±12
±12
±12
±8
±20
±20
±20
±20
±20
±12
±12
±8
±10
±20
±20
±20
±20
±20
±20
±12
±12
±12
±12
±12
±20
STP2 Series ... [Part Number: TPCT4xxx]
Features
• The combination of a new chip design using Toshiba U-MOSIV process technology and a new small
pump-structured package, offers low ON-resistance.
Product Offerings
VSSS (V) VGSS (V) IS (A)
RSS(ON) Max (mΩ)Ciss Typ.
(pF)
QgTyp.
(nC)
2.5 V 4 V 4.5 V
TPCT4203 49 32 790 U-MOSIV
U-MOSIV
TPCT4204
20
30
6
65239
31
38
11
12 780
N-ch Dual
SeriesPart Number Absolute Maximum Ratings Circuit
Configuration
TPCP8BA1 –20 ±12 –1.3 260 U-MOSII
TPCP8AA1 20 ±12 1.6 140 U-MOSII
: No protection Zener diode between gate and source : Under development
32
Low-VDSS MOSFETs (in Small SMD Packages)
4
SOP-8 Series … [Part Number: TPC8xxx]
TSSOP Advance Series … [Part Number: TPCM8xxx]
Product Offerings
Product Offerings
Features
Low ON-resistance and high-speed-switching series are available.
Low ON-resistance series: UMOSIV/V/VI
High-speed-switching series: U-MOSIII-H and U-MOSV-H
ON-resistance reduction through the use of an AI strap structure
VGSS (V)
TPCM8001-H 30 20 9.5 14 19 1130 U-MOSIII-H
TPCM8003-H 30 21 12.9 15.7 11 1433 U-MOSV-H
TPCM8004-H 30 24 11 13.4 11 1433 U-MOSV-H
TPCM8006 30 25 7.0 13.5 26 1270 U-MOSIV
N-ch Single
TPCM8002-H 30 30 6.2 8.2 18 2270 U-MOSV-H
TPCM8A05-H 30 20 12.9 17.2 7.4 1300 U-MOSV-H
TPCM8102 –30 –25 7.7 — 60 2450 U-MOSV
P-ch Single
MOSBD
VDSS (V) ID(A)
RDS(ON) Max (mΩ)Ciss Typ.
(pF)
Qg Typ.
(nC)
10 V 4.5 V
16
4 V SeriesPart Number Absolute Maximum Ratings Circuit
Configuration
: No protection Zener diode between gate and source
: No protection Zener diode between gate and source
640
TPC8021-H 30 11 17 25 11
30
30
15
17
11
11
TPC8026
30
13 6.6 10 —42 1800 U-MOSIV
8.5 17 U-MOSIV
TPC8025
TPC8030
30 914.5 —26 1270
24 1140
U-MOSIV
30
TPC8041 13 713.5 —27 1270 U-MOSIV
30
N-ch
Single
TPC8032-H
TPC8033-H
10 V 4.5 V 4 V 2.5 V SeriesPart Number Absolute Maximum Ratings Circuit
Configuration
Qg Typ.
(nC)
Ciss Typ.
(pF)
U-MOSIII-H
6.5 8.6 — 17 2270 U-MOSV-H
5.3 7.2 — 22 2900 U-MOSV-H
30
30
12
12
TPC8037-H
TPC8038-H
11.4 13.9 — 11 1433 U-MOSV-H
11.4 13.9 — 11 1433 U-MOSV-H
30 17
TPC8039-H 5.7 6.6 — 18 2600 U-MOSVI-H
VDSS (V) VGSS (V) ID(A)
RDS(ON) Max (mΩ)
TSON Advance Series … [Part Number: TPCC8xxx]
The small thermally enhanced package gives a 64% reduction in mounting area compared with
SOP-8, yet an equivalent maximum permissible power dissipation.
Features
TPCC8007 ✩✽
TPCC8008
N-ch Single
P-ch Single
TPCC8102
TPCC8103
Product Offerings
: No protection Zener diode between gate and source : Under development
U-MOSIV
U-MOSV
U-MOSIV
U-MOSV
U-MOSVI-H
U-MOSV-H
U-MOSVI-H
U-MOSVI-H
U-MOSV-H,
rg=3.2Ω(Typ.)
U-MOSV-H
TPCC8002-H
TPCC8A01-H
TPCC8006-H
TPCC8005-H
MOSBD
TPCC8003-H
TPCC8001-H
20
30
–30
–30
30
30
30
30
30
30
27
25
–15
–18
22
21
22
26
13
22
18.9
6.8
12
8.3
9.9
8.0
6.4
16.9
8.3
(4.6)
12.8
10.6
12.6
9.3
7.4
19.3
10.6
14.3
10.1
15.0
19.0
8.6
14.3
TBD
30
26
38
1900
1430
1700
2200
990
TBD
1600
1200
1600
1900
(8.7)
N-ch Single
10 V 4.5 V
33.2
22
4 V 2.5 V SeriesPart Number Absolute Maximum Ratings Circuit
Configuration
VDSS (V) VGSS (V) ID (A)
RDS(ON) Max (mΩ)Ciss Typ.
(pF)
Qg Typ.
(nC)
±20
±12
±25
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±25
±20
±20
±20
TPC8040-H 13 9.7 11.1 —12 1700 U-MOSVI-H
30 ±20
±20
±20
±20
±20
33
Product Offerings
30 18
200 1.8 400 — 11 440
20 5 50 70 9.5 780 U-MOSIII
20 6 20 30 22 2010 U-MOSIII
30 5.5 36 44 — — 25 1250 U-MOSIII
30 6 21 27 — — 16 840
30 8 15 20 — — 75 3530 U-MOSIII
60 5 50 56 — 6 625 U-MOSIII-H
100 2.2 180 190 — 4.5 360 U-MOSIII-H
18 U-MOSIV
30
18
4.3 8
45 1800
U-MOSIV
30
18
3.4 6.5 —
56 2900
U-MOSIV
30 3.8 7 49 2200
13 — 28 40 1560 U-MOSV
N-ch
Single
N-ch
Dual
–30 –10
–30 –11 12 — 24 — 42 1770 U-MOSV
–30 –11 12 18 — 107 5710 U-MOSIV
–30 –11 10 18 — 107 4500 U-MOSIV
–30 –12 8— —16.5 62 2450
68 2940
U-MOSV
–30 –11–25/+20
–25/+20
9 12.5 U-MOSVI
–13 7— 15 65 2700 U-MOSV
–30
–18 4.5 6.8 — 180 7480 U-MOSIV
–30
–30 –18 3.9 7.9 — 130 4600 U-MOSV
–20 –10 10 14 115 9130 U-MOSIV
–30 –18 3.2 4.2 — 180 7420 U-MOSVI
–40 –8 25 —35 —48 2180 U-MOSIII
–40 –7.5 30 37 — 27 1190
P-ch
Single
π-MOSV
80 13 9.7 — —
60 16 6.9 — —
60 13 10.7 — —
60 11 14.5 — —
60 9 22.5 — —
40 18 3.9 — —
40 18 5.7 — —
40 16 7.6 — —
40 12 11.5
10.1
7.4
11.5
15.6
24.2
4.4
6.6
8.8
13.3
43
46
29
21
13
48
31
23
13
5800
5800
3545
2590
1620
5800
3545
2590
1620——
30 6.4 20 23 — 7.6 900 U-MOSVI-H
40 7.5 27 35 — — 11 650
10 V 4.5 V 4 V 2.5 V SeriesPart Number
Absolute Maximum Ratings
Circuit
Configuration
Qg Typ.
(nC)
Ciss Typ.
(pF)
3.5 4.5 — 35 4614 U-MOSV-H
30
30 18
18
4.5 5.1 — 26 3500 U-MOSVI-H
3.2 3.6 44 6000 U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
VDSS (V) VGSS (V) ID(A)
RDS(ON) Max (mΩ)
30 12/1 10.1 12.9 9.6 1400
30 6 26 33 — — 27 1240 U-MOSIII
–30 –4.5 33 42 — 40 1540 U-MOSIV
30 625 30 — 17 940
30 8.5/1 18 21 — 49 2295 U-MOSIII
N-ch/
N-ch + SBD
MOSBD
40 6.5 27 35 — 11 650
–40 –6.5 30 37 — 27 1190
N-ch/P-ch
Dual
U-MOSIII-H
U-MOSIII-H
U-MOSV-H
30 17/1 5.6 7 — 19 2640 U-MOSV-H
30 18/1 3.6 4.5 29 4400 U-MOSV-H
U-MOSIII
: No protection Zener diode between gate and source
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±12
±12
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±8
±20
±20
±20
±20
±20
±20
±20
250 1.1 1.7 —— —10 267
–250 –0.9 2.55 — 12 381
π-MOSV
π-MOSV
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
TPC8012-H
TPC8208
TPC8207
TPC8211
TPC8212-H
TPC8210
TPC8213-H
60 3.8 57 64 — 5.7 640 U-MOSVI-H
±20
TPC8218-H
TPC8214-H
TPC8028
TPC8029
TPC8042
TPC8119
TPC8121
TPC8122
TPC8111
TPC8113
TPC8123
TPC8118
TPC8114
TPC8117
TPC8034-H
TPC8115
TPC8120
TPC8110
TPC8116-H
TPC8051-H
TPC8048-H
TPC8049-H
TPC8050-H
TPC8053-H
TPC8045-H
TPC8046-H
TPC8047-H
TPC8052-H
TPC8216-H
TPC8022-H
TPC8036-H
TPC8035-H
TPC8A06-H
30 10/1 13.3 17.6 7.4 1300 U-MOSV-H
±20
TPC8A05-H
TPC8405
TPC8A01
TPC8406-H
TPC8A03-H
TPC8A04-H
TPC8404
TPC8027 2.7 5.5 113 420030 18 U-MOSIV
±20
±20
34
Low-VDSS MOSFETs (in Small SMD Packages)
4
3.7 — 7.8 120 4600
3.5 — 32 2900
914
22 1365
21 26 — 22 1375
67 —
12 780
26 38 2330
450 10 600
600580 —
10
4.2 — 6.8 184 7880
1600——33 18
16 — 24
7.5
51
27 35 — 11 650
——
5.4 7.9 37 2155
——
350 10 600——
30 37 —
27 1190——
92
— 90 4300
9.5 — 100 4820
P-ch
Single
N-ch
Single
6.2 8.2 18 2270
——
4.9 6.8 22 2900
——
3.1 4.1 34 4614
——
3.5 6.0 49 2200——
2.2 4.5 113 4200
——
2.8 3.2 46 6000——
5.3 6.7 19 2640
——
MOSBD
12.9 17.2 7.4 1300——
4.3 7.8 45 1800——
3.2 4.1 30 4400
11.3 13.1 13 1620
——
7.3 8.5 23 2590
——
10 — 23 1430
——
10.4 —
11.2 29 3545
6.6 46 58007.1
9.4 47 58009.8 — —
5.4 6.3 29 3545
3.6 4.1 47 5800
22.3 — 13 1620
24
14.2 21 259015.3 — —
4.2 5.3 24 3500
3.3 5.7 56 2900
3.4 3.9 34 4600
4.2 4.8 26 3500
5.7 6.6 19 2600
11.0 13.4 83 1433
–30
20
40
60
100
100
200
250
–30
–12
–60
40
40
150
–40
–40
30
30
30
30
30
30
30
30
30
30
40
40
40
60
60
80
40
40
60
60
30
30
30
30
30
30
30
–40
40
30
25
18
22
5.5
4
–40
–6
–40
7.5
35
7
–7.5
–40
30
40
45
40
45
50
34
10
35
42
20
32
30
28
35
28
38
46
15
24
38
45
45
38
34
24
24 11.0 13.4 83 1433
U-MOSV
U-MOSIV
U-MOSIII
U-MOSIV
U-MOSIII
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSIV
U-MOSIV
U-MOSVI-H
U-MOSV-H
U-MOSV-H
U-MOSIV
U-MOSIII-H
U-MOSIII-H
U-MOSV-H
U-MOSIII-H
U-MOSVI-H
U-MOSIII-H
U-MOSVI-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
π-MOSVII
π-MOSV MACHII
π-MOSV MACHII
π-MOSV MACHII
U-MOSIII-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSV-H
U-MOSIV
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSV-H
U-MOSV-H
TPCA8011-H
TPCA8014-H
TPCA8016-H
TPCA8006-H
TPCA8022-H
TPCA8010-H
TPCA8008-H
TPCA8106
TPCA8103
TPCA8105
TPCA8104
TPCA8020-H
TPCA8015-H
TPCA8009-H
TPCA8107-H
TPCA8108
TPCA8018-H
TPCA8012-H
TPCA8019-H
TPCA8025
TPCA8026
TPCA8028-H
TPCA8A02-H
TPCA8A05-H
TPCA8024
TPCA8052-H
TPCA8047-H
TPCA8027-H
TPCA8049-H
TPCA8048-H
TPCA8051-H
TPCA8046-H
TPCA8045-H
TPCA8053-H
TPCA8050-H
TPCA8A04-H ✽✩
TPCA8A08-H
TPCA8042
TPCA8060-H
TPCA8036-H
TPCA8039-H
TPCA8030-H
TPCA8031-H
±12
±20
9.4 10.8 11.7 1700
30 23 U-MOSVI-H
TPCA8040-H ±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±8
±20
±20
±20
±20
±20
±20
±20
±20
±20
SOP Advance Series … [Part Number: TPCA8xxx]
Product Offerings
Features
• Low ON-resistance and high-speed-switching series are available.
Low ON-resistance series: UMOSIV/V
High-speed-switching series: U-MOSIII-H, U-MOSV-H and U-MOSVI-H
• High-current, thin and thermally enhanced package
DPAK Series ... [Part Number: TKxxPxxxM1]
Product Offerings
Features
• High-current, thermally enhanced package
10 V 4.5 V 4 V 2.5 V Series
Part Number Absolute Maximum Ratings
Circuit
Configuration
Qg Typ.
(nC)
Ciss Typ.
(pF)
VDSS (V) VGSS (V) ID(A)
RDS(ON) Max (mΩ)
1.8 V
: No protection Zener diode between gate and source : Under development
: No protection Zener diode between gate and source
9.4 1150
TK40P03M1
N-ch
Single
VDSS (V) VGSS (V) ID(A)
Part Number Absolute Maximum Ratings
Circuit
Configuration
RDS(ON) Max (mΩ)Q
g
Typ.
(nC)
C
iss
Typ.
(pF) Series
38 2600
TK50P04M1
U-MOSVI-H
13.3 1700
TK50P03M1
30
40
30
40
40
50
50
40
10.8
10 V
8.7
7.5
10.3
14.4
4.5 V
10.2
9.8
13.4 29 1920
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
TK40P04M1
±20
±20
±20
±20
35
Polarity
Polarity
**: Built-in 1-MΩ gate-source resistor
Absolute Maximum Ratings
Absolute Maximum Ratings
Package
Package
R
DS(ON)
Typ.
(Max)
(Ω)
V
DSS
(V)
V
GSS
(V)
I
D
(mA)
SSM3K15F
2SK2009
2SK1062
SSM3K7002F
SSM3K7002AF
SSM3K7002BF
SSM3J15F
2SJ305
2SJ343
2SJ168
SSM3K16FU
**SSM3K04FU
SSM3K05FU
SSM3K15FU
SSM3K09FU
SSM3K17FU
SSM3K7002FU
SSM3K7002AFU
SSM3K7002BFU
SSM3J16FU
SSM3J05FU
SSM3J15FU
SSM3J09FU
2SJ344
SSM3K36TU
SSM3J36TU
SSM3K35FS
SSM3K16FS
SSM3K36FS
SSM3K43FS
**SSM3K04FS
SSM3K15FS
SSM3K44FS
SSM3K7002BFS
SSM3J35FS
SSM3J16FS
SSM3J36FS
SSM3J15FS
SSM3K35MFV
SSM3K16FV
SSM3K36MFV
SSM3K03FV
**SSM3K04FV
SSM3K15FV
SSM3K44MFV
SSM3J35MFV
SSM3J16FV
SSM3J36MFV
SSM3J15FV
SSM3K35CT
SSM3K16CT
SSM3K15CT
SSM3J35CT
SSM3J16CT
SSM3J15CT
20
20
20
20
20
20
20
30
30
30
30
50
60
60
60
60
20
20
20
20
30
30
30
50
60
±10
±10
±10
±10
10
10
±12
±20
±20
±20
±20
±7
±20
±20
±20
±20
±10
±10
±8
±12
±20
±20
±20
7
±20
180
100
500
500
100
100
400
100
100
200
400
100
200
200
200
200
100
100
330
200
100
200
200
50
200
0.4 to 1.0
0.6 to 1.1
0.35 to 1.0
0.35 to 1.0
0.7 to 1.3
0.7 to 1.3
0.6 to 1.1
0.8 to 1.5
0.8 to 1.5
0.5 to 1.5
1.1 to 1.8
0.9 to 1.5
2.0 to 3.5
1.0 to 2.5
1.0 to 2.5
1.5 to 3.1
–0.4 to –1.0
–0.6 to –1.1
–0.3 to –1.0
–0.6 to –1.1
–1.1 to –1.7
–0.5 to –1.5
–1.1 to –1.8
–0.8 to –2.5
–2.0 to –3.5
5 (20)
5.2(15)
0.95 (1.52)
0.95 (1.52)
4 (12)
4 (12)
0.85 (1.20)
4.0 (7.0)
4.0 (7.0)
1.2 (2.0)
0.8 (1.2)
22 (40)
0.6 (1.0)
2.2 (3.3)
1.8 (3.3)
2.1 (3.3)
11 (44)
18 (45)
2.23 (3.6)
3.2 (4.0)
14 (32)
2.4 (4.0)
3.3 (4.2)
20 (50)
1.3 (2.0)
1.2
1.5
1.5
1.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
2.5
10
4.5
4.5
4.5
1.2
1.5
1.5
2.5
2.5
2.5
4.0
4.0
10
S-Mini
(SOT-346)
2925 size, 3-pin
USM
(SOT-323)
2021 size, 3-pin
UFM
2021 size, 3-pin
SSM
(SOT-416)
1616 size, 3-pin
VSEM
(SOT-723)
1212 size, 3-pin
CST3
1006 size, 3-pin
N-ch
P-ch
V
th
(V)
V
GS
(V)
Constituent
Devices
**: Built-in 1-MΩ gate-source resistor
RDS(ON)
Typ.
(Max)
(
Ω)
VDSS
(V)
VGSS
(V)
ID
(mA)
SSM6N35FU
SSM6N16FU
SSM6N43FU
**SSM6N04FU
SSM6N05FU
SSM6N15FU
SSM6N44FU
SSM6N09FU
SSM6N17FU
SSM6N7002FU
SSM6N7002AFU
SSM6N7002BFU
SSM6P35FU
SSM6P16FU
SSM6P05FU
SSM6P15FU
SSM6P09FU
SSM6L35FU
SSM6L05FU
SSM6L09FU
SSM5N16FU
SSM5N05FU
SSM5N15FU
SSM5P16FU
SSM5P05FU
SSM5P15FU
SSM6N35FE
SSM6N16FE
SSM6N36FE
SSM6N03FE
SSM6N15FE
SSM6N44FE
SSM6N7002BFE
SSM6P35FE
SSM6P16FE
SSM6P36FE
SSM6P15FE
SSM6L35FE
SSM6L16FE
SSM6L36FE
SSM5N16FE
SSM5N03FE
SSM5N15FE
SSM5P16FE
SSM5P15FE
SSM3K35FS×2
SSM3K16FU×2
SSM3K36FS×2
SSM3K43FS×2
SSM3K03FE×2
SSM3K04FU×2
SSM3K05FU×2
SSM3K15FU×2
SSM3K44FS×2
SSM3K09FU×2
SSM3K17FU×2
SSM3K7002FU×2
SSM3K7002AFU×2
SSM3K7002BFU×2
SSM3J35FS×2
SSM3J16FU×2
SSM3J36FS×2
SSM3J05FU×2
SSM3J15FU×2
SSM3J09FU×2
SSM3K35FS
+SSM3J35FS
SSM3K16FS
+SSM3J16FS
SSM3K36FS
+SSM3J36FS
SSM3K05FU
+SSM3J05FU
SSM3K09FU
+SSM3J09FU
SSM6N37CTD
SSM6N36TU
SSM6P36TU
SSM6L36TU
0.4 to 1.0
0.6 to 1.1
0.35 to 1.0
0.35 to 1.0
0.35 to 1.0
0.7 to 1.3
0.7 to 1.3
0.6 to 1.1
0.8 to 1.5
0.8 to 1.5
1.1 to 1.8
0.9 to 1.5
1.0 to 2.5
1.0 to 2.5
1.5 to 3.1
–0.4 to –1.0
–0.6 to –1.1
–0.3 to –1.0
–0.6 to –1.1
–1.1 to –1.7
–1.1 to –1.8
0.4 to 1.0
–0.4 to –1.0
0.6 to 1.1
0.6
to –
1.1
0.35 to 1.0
–0.3 to –1.0
0.6 to 1.1
–0.6 to –1.1
1.1 to 1.8
–1.1 to –1.8
20
20
20
20
20
20
20
20
30
30
30
50
60
60
60
–20
–20
–20
–20
–30
–30
20
–20
20
–20
20
–20
20
–20
30
–30
±10
±10
±10
±10
±10
10
10
±12
±20
±20
±20
±7
±20
±20
±20
±10
±10
±8
±12
±20
±20
±10
±10
±10
±10
±10
±8
±12
±12
±20
±20
180
100
250
500
500
100
100
400
100
100
400
100
200
200
200
–100
–100
–330
–200
–100
–200
180
–100
100
–100
500
–330
400
–200
400
–200
5 (20)
5.2 (15)
3.07 (5.6)
0.95 (1.52)
0.95 (1.52)
4 (12)
4 (12)
0.85 (1.2)
4.0 (7.0)
4.0 (7.0)
0.8 (1.2)
22 (40)
2.2 (3.3)
1.8 (3.3)
2.1 (3.3)
11 (44)
18 (45)
2.23 (3.6)
3.2 (4.0)
14 (32)
3.3 (4.2)
5 (20)
11 (44)
5.2 (15)
18 (45)
0.95 (1.52)
2.23 (3.6)
0.85 (1.2)
3.2 (4.0)
0.8 (1.2)
3.3 (4.2)
1.2
1.5
1.5
1.5
1.5
2.5
2.5
2.5
2.5
2.5
4.0
2.5
4.5
4.5
4.5
–1.2
–1.5
–1.5
–2.5
–2.5
–4.0
1.2
–1.2
1.5
–1.5
1.5
–1.5
2.5
–2.5
4.0
–4.0
US6
(SOT-363)
2021 size, 6-pin
UF6
2021 size, 6-pin
USV
(SOT-353)
2021 size, 5-pin
ES6
(SOT-563)
1616 size, 6-pin
ESV
(SOT-553)
1616 size, 5-pin
CST6D
1009 size, 6-pin
N-ch×2
P-ch×2
N-ch+
P-ch
Vth
(V)
VGS
(V)
Single MOSFETs
Dual MOSFETs
4-7 Standard MOSFET Series (ID < 500 mA)
36
Low-VDSS MOSFETs (in Small SMD Packages)
4
<Previous>TO-220SM
Front View
<New>TO-220SM(W)
<TO-220SM> <TO-220SM(W)>
Low ON-resistance
Low package inductance
Low thermal resistance
Cu connectors
250
200
150
100
50
00 20 40 60 80 100 120 140 160
Drain Current, ID(A)@180 Seconds
Source Lead Temperature (@180 Seconds)
Predecessors
TO-220SM(W)
Comparison of the Source Lead Temperature
Approx. twofold
current drive
capability
Package
Features
Product Offerings
TJ120F06J3
11500 258
TK100F04K3 4500 102
TK150F04K3
TK100F04K3L
TK150F04K3L
7500 166
TK100F06K3 4500 98
TK130F06K3 8400 170
TK50F15J1
–60
40
40
60
60
150
–120
100
150
100
130
50
8
3
2.1
5
3.4
30
4300 75
RDS(ON) Max (mΩ)
ID (A)
VDSS (V) VGSS (V) VGS = 10 V VGS =6 V
Absolute Maximum Ratings Series
Part Number Qg Typ.
(nC)
Ciss Typ.
(pF)
U-MOSIII
U-MOSIII
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIV
±20
±20
±20
9400 19040 150 2.1 3.2 U-MOSIV
±20
4980 10540 100 3 4.5 U-MOSIV
±20
±20
±20
±20
Characteristics of the WARP Series
• Achieves low ON-resistance, low package inductance and low thermal resistance due to the use of Cu connectors.
• Achieves a high current-carrying capability due to the use of a wide source terminal (ID (DC) = 150 A max)
• AEC-Q101-qualified at a channel temperature (Tch) of 175˚C
• Thin package: 3.7-mm (max) thick, much thinner than the previous TO-220SM package with a thickness of 4.7 mm (max)
The TO-220SM(W) package, which uses Cu connectors and a wide source terminal, realizes low ON-resistance and a
high current-carrying capability.
5-1 TO-220SM(W) Series
37
Low-VDSS, High-Qg MOSFETs
5
17“ ::
Drain
Source Gate
Poly Si
PPP
N
NNN N
N+
Source Gate
Poly Si
Drain
P P P
N
N+N+N+
N+
N+
Planar Structure Trench (U-MOS) Structure
Product Offerings
Features
motor drive
Solenoids
Lamp drivers
DC-DC converters
motor drive
Solenoids
Lamp drivers
DC-DC converters
LCD backlight inverter
LCD backlight inverter
Applications Part
Number
2SJ668
2SK3662
2SK3842
2SK3844
2SK3845
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
PW-Mold
TO-220NIS
TO-220SIS
TFP
TO-220NIS
TO-3P(N)
2SJ681 New PW-Mold2
2SJ669 TPS
TPCA8104 SOP Advance
2SK3846 TO-220NIS
2SK3847 TO-220SM
TO-220SM(W)
TO-220SM(W)
TK70J04J3
2SK4017 New PW-Mold2
2SK4033 New PW-Mold
TK30A06J3A
TO-220SIS
TK25A10K3
2SK3940 TO-3P(N)
2SK4034 TFP
TFP
2SK3843
TO-3P(N)
2SK3754 TO-220NIS
TJ120F06J3 TO-220SM(W)
TJ20A10M3
60
60
60
–60
60
–60
–60
–60
40
40
40
60
60
60
100
75
60
40
30
–60
–100
–5
35
75
45
70
–5
–5
–40
26
32
75
5
5
30
25
70
75
70
5
–120
–20
20
35
125
45
125
20
1.2
45
25
30
20
20
25
25
150
125
125
150
25
300
35 TO-220SIS
12.5
170
5.8
5.8
5.8
170
170
16
16
16
100
100
26
40
7.0
5.8
3.5
3.8
89
8.0
8.0
90
8.0
28
28
35
10
8.3
99
10
19
250
8.0 —
5.6 —
5.6 —
250
250
24
150
150
20 — —
30 — —
15
15
15
90
91
210
±20 TFP
TK70X04K3
Z
40 70 80
±20 TFP
TK70X04K3 40 70 80
40
40
15
15
36
34
200
196
210
62
62
±20
TK100F04K3 40 100 200
±20
TK150F04K3 40 150 300
3.0 —
3.5 —
3.0 4.5
2.1 3.2
102
2.1 — 166
±20
TO-220SM(W)
TFP
TK150F04K3L TO-220SM(W)40 150 300 190
±20
TK80X04K3 40 80 125
±20
TK100F04K3L 40 100 200
100
105
196
TK70X06K3 ±20 TFP60 70 80 62
196
2.5
258
±20
TJ70A06J3 TO-220SIS–60 –70 54 246
120
196
RDS(ON) Max (mΩ)
ID(A) PD(W)VDSS (V) 10 V 6 V 4.5 V 4 VVGSS (V) Package Series
Absolute Maximum Ratings Qg Typ.
(nC)
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSVI
U-MOSIV
U-MOSIV
±20 TO-220SM(W)
TK50F15J1 150 50 300 75
±20 TFP
TK40X10J1 100 40 125 59
U-MOSIII
U-MOSIV
U-MOSIV
Fabricated using a trench structure, the U-MOS Series ultra-high integration density and thus
• High density through the use of submicron technology
• 60% reduction in RDS (ON) by per unit area (as compared with the maximum RDS (ON) of L2-π-MOSV)
• Guaranteed avalanche capability and improved di/dt rate
: No protection Zener diode between gate and source
5-2 U-MOS (Trench Type) Series
38
Low-VDSS, High-Qg MOSFETs
5
90.5
90.0
89.5
89.0
88.5
88.0 01234567
Pout (W)
Efficiency (%)
U-MOSIV TK80A08K3
U-MOSIII-H TK60A08J1
3 paralleled 100-V/30-A Schottky barrier diodes
PFC
MAIN
Synchronous
Rectifier
VIN
VOUT
TK60A08J1
vs
TK80A08K3
+
+
+
130-W(19.5-V/6.7-A)
Flyback Converter
VIN = 100 Vac
Efficiency Test Circuit
Characteristic
Gate leakage current
Drain cut-off current
Drain-source
breakdown voltage
Gate threshold voltage
Drain-source
ON-resistance
Input capacitance
Reverse transfer
capacitance
Forward voltage
Test Conditions
VGS condition*, VDS = 0 V
VGS condition*, VDS = 0 V
VDS = 75 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = –20 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 40 A
VDS = 10 V, VGS = 0 V
f = 1 MHz
IDR = 80 A, VGS = 0 V
Symbol
+IGSS
-IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
Ciss
Crss
VDSF
Min
75
50
Typ.
–0.9
Max
1
–1
10
–1.2
Min
75
60
1.1
Typ.
6.2
5450
320
–0.9
Max
10
–10
10
2.3
7.8
–1.2
Unit
V
V
V
mΩ
pF
pF
V
TK80A08K3 TK60A08J1
Product Offerings
5.1
6.2
6.2
11.5
6.4
7.8
7.8
15
87
86
86
76
30
27
27
25
TK70D06J1
TK60D08J1
TK60A08J1
TK40D10J1
TO-220(W)
5.1 6.4 87 30
TK70A06J1 TO-220SIS
TO-220(W)
TO-220SIS
7.0 9.0 80
TK40A08K3 TO-220SIS
3.6 4.5 175 80
TK80A08K3 TO-220SIS
11.5 15 85 40
TK40A10K3 TO-220SIS
3.6 4.5 175 80
TK80D08K3 TO-220(W)
TO-220(W)
11.5 15 76 25
TK40A10J1 TO-220SIS
15 20 59 25
TK40X10J1 TFP
8.4 10.5 110 33
TK55D10J1 TO-220(W)
8.4 10.5 110 33
TK55A10J1 TO-220SIS
22 30 75 33
60
75
75
100
60
75
75
100
75
100
100
100
100
150
TK50X15J1
70
60
60
40
70
40
80
40
80
40
40
55
55
50
140
140
45
100
45
42
40
40
100
40
125
140
45
125 TFP
RDS(ON) (mΩ)@VGS = 10 V
Qsw (nC) Typ.
ID (A)VDSS (V)
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
VGSS (V) VDS = VDSS x 0.8, ID = ID (DC)PD (W) Typ. Max
Qg (nC) Typ. Package Series
Absolute Maximum Ratings
Part Number
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
Comparisons Between Synchronous Rectification MOSFETs
Features
Efficiency approx. 1% higher than Schottky barrier diodes
*: Test conditions: TK80A08K3: VGS = ± 20 V, TK60A08J1: VGS = ±16 V
μA
μA
μA
U-MOSIV
U-MOSIV
U-MOSIV
U-MOSIV
• Low ON-resistance achieved by high density through the use of submicron technology
• Guaranteed avalanche capability
• High power dissipation achieved by having the series housed in the TO-220(W) package with an
exposed heatsink on the bottom of the package
2.0 —
3.6
8200
770
4.0
4.5
5-3 U-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V)
39
76%
78%
80%
82%
84%
86%
88%
90%
020 40 60 80 100 120 140
2SK3569
TK10A60D
Pout (W)
Efficiency
Efficiency greater than a π-MOSVI MOSFET
Rg = 47 Ω
Rg = 47 Ω
Rg = 4.7 Ω
Rg = 4.7 Ω
PFC
MAIN
Synchronous
Rectifier
VIN
VOUT
2SK3569
vs
TK10A60D
+
+
+
120-W (20-V/6-A)
Flyback Converter
VIN = 100 Vac, VGS = +10, −0 V
π-MOSVII
TK10A60D
600 V/10 A
TO-220SIS
π-MOSVI
2SK3569
600 V/10 A
TO-220SIS
Characteristic Symbol
±I
GSS
IDSS
VDSF
Qg
RDS(ON)
V(BR)DSS
Vth
Series
Part Number
Ratings
Package
Test Conditions
VGS condition*, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = +10 mA, VGS = 0 V
IDR =10 A, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDD = 400 V, VGS = 10 V, ID = 10 A
Min Typ. Max
± 1
— 100
600 —
2.0 —
4.0
25
— –1.7
— 0.75
Min Typ. Max Unit
± 10 μA
— 100 μA
600 — V
2.0
4.0 V
—42—nC
— –1.7 V
0.75 Ω
*: Test conditions: TK10A60D: VGS = ± 30 V, 2SK3569: VGS = ± 25 V
Efficiency Test Circuit
Product Offerings
RDS(ON) (Ω)
ID (A)VDSS (V)
Package
Absolute Maximum
Ratings Equivalent
π-MOSVI
Part
Part Number
VGS = 10 V
TK13A45D
TK4A50D
TK5A50D
TK6A50D
TK7A50D
TK8A50DA
TK8A50D
TK10A50D
TK11A50D
TK12A50D
TK13A50DA
TK13A50D
TK15J50D
TK15A50D
TK18A50D
TK20J50D
TK4A53D
TK5A53D
TK6A53D
TK6P53D
TK12A53D
TK12X53D
TK4A55DA
TK4A55D
TK5A55D
TK6A55DA
450
500
525
550
0.46
2.0
1.5
1.4
1.2
1.0
0.85
0.72
0.6
0.52
0.47
0.4
0.4
0.3
0.27
0.27
1.7
1.5
1.3
1.3
0.58
0.58
2.45
1.9
1.7
1.48
13
4
5
6
7
7.5
8
10
11
12
12.5
13
15
15
18
20
4
5
6
6
12
12
3.5
4
5
5.5
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
TO-220SIS
TO-220SIS
TO-3P(N)
TO-220SIS
TO-220SIS
TO-220SIS
D-PAK
TO-220SIS
TFP
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
2SK3743
2SK3563
2SK3561
2SK3568
2SK4012
2SK4107
2SK3934
2SK4108
2SK3563
2SK3398
RDS(ON) (Ω)
ID (A)VDSS (V)
Package
Absolute Maximum
Ratings Equivalent
π-MOSVI
Part
Part Number
VGS = 10 V
TK8A55DA
TK9A55DA
TK11A55D
TK12A55D
TK12J55D
TK13A55DA
TK14A55D
TK16A55D
TK16J55D
TK2Q60D
TK3A60DA
TK4A60DA
TK4A60DB
TK4A60D
TK6A60D
TK8A60DA
TK10A60D
TK11A60D
TK12A60D
TK13A60D
TK15A60D
TK5A65D
TK6A65D
TK8A65D
TK12A65D
550
600
650
1.07
0.86
0.63
0.57
0.57
0.48
0.37
0.33
0.37
5.0
2.8
2.2
2
1.7
1.25
1
0.75
0.65
0.55
0.43
0.37
1.43
1.11
0.84
0.50
7.5
8.5
11
12
12
12.5
14
16
16
2
2.5
3.5
3.7
4
6
7.5
10
11
12
13
15
5
6
8
12
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
New PW-Mold 2
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
2SK4002
2SK3567
2SK3562
2SK3667
2SK3569
2SK3797
: Under development
6-1 π-MOSVII Series (VDSS = 450 V to 650 V)
The latest addition to the π-MOS portfolio, the π-MOSVII Series offers reduced capacitances due to optimized chip
design and is available with a greatly wider range of electrical characteristics.
Performance Comparisons Between
π-MOSVII and π-MOSVI Devices (600 V/10 A)
Features
• 40% reduction in Qg from π-MOSVI due to optimized chip design
• Available in 50-V steps of VDSS and in finer steps of RDS(ON).
• Rated avalanche and reverse recovery current capabilities
Gate leakage current
Drain cut-off current
Gate threshold voltage
Total gate charge
Diode forward voltage
Drain-source breakdown voltage
Drain-source ON-resistance
40
6
Mid- and High-VDSS MOSFETs
09 m. 400w mam 251: Avalanche Breakdown Vm): gov, L: I mH Vas: mm Rg=25 9,251: Runxaamnm m ‘Rnn X an ‘s allgmtntrmem me: (arms memng speed at MOSFEYs s N mMOSW D1MOSI DTMOSII Inlnrnal Dlodn Roi/aria Recovery Von: 400 v, am: 500 ms m = 2a A, V55 = u M1501: stSg 2 Via a'ncl'nlv K; was: 100 V/div quip/51h: Ves~2n Vldlv wow-r—y—op—q— ' vbs: W v/fiiv Mas ’ l: mu nudlv Mex damaged a . 5w Alps msonc llF:2‘0N;1iv I nsnnn Vldlv
Qg
VDD: 400 V, ID = 20 A, 25˚C
Internal Diode Reverse Recovery
VDD = 400 V, di/dt = 500 A/μs
IDR = 20 A, VGS = 0 V, 150˚C
Avalanche Breakdown
VDD = 90 V, L = 1 mH
VGS = ±15 V, Rg = 25 Ω, 25˚C
VDS: 100 V/div
ID: 10 A/div
VGS: 2 V/div
Qg: 4 nC/div
t: 100 ns/div
IF: 20 A/div
VDS:100 V/div
t: 10 μs/div
VGS: 20 V/div
20 A VDS: 200 V/div
Not damaged at
500 A/μs @150°C
Qg: 27nC
0DTMOS
I
DTMOS
II
Ron x Q
g
(
Ω
·nC)
π-MOS
VI
2
4
6
8
10
12
14
62%
reduction
15%
reduction
*Ron x Qg is a figure-of-merit index for the switching speed
of MOSFETs.
*: Test conditions: TK20J60U: VGS = ± 30 V, 2SK3911: VGS = ± 25 V
Performance Characteristics of the New DTMOS Series
TK20A60U Electrical Characteristics
Performance Comparisons Between the New DTMOS and Conventional
MOSFET (π-MOSVI) Devices (600 V/20 A)
Figure-of-Merit (FOM) Comparison
Ron x Qg, the product of ON-resistance
and total gate charge, is reduced by 62%,
compared with the conventional MOSFETs
with the same chip size.
: Under development
Product Offerings
Features
R
DS(ON)
Max (Ω)
ID (A)
VDSS (V)
Absolute Maximum Ratings
Part Number Package Series
Qg Typ.
(nC)
Ciss Typ.
(pF)
600
650
40
15
50
13
0.3
0.08
0.065
0.38
67
21
70
17
3900
12 0.4 14 720
1200
20 0.19 30 1580
4300
950
TO-3P(N)
TO-220SIS
TO-3P(N)
TO-220(W)
TO-3P(N)
TO-220SIS
TO-220(W)
TO-220(W)
TO-3P(N)
TO-220SIS
TO-220(W)
TO-220SIS
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-220SIS
TK15J60T
TK12J60U
TK15A60U
TK40J60T
TK12D60U
TK12A60U
TK15D60U
TK15J60U
TK20D60U
TK20D60T
TK20J60T
TK20A60U
TK20J60U
TK20A60T
TK50J60U
TK13A65U
15 0.3 17 950
20 0.19 27 1470
DTMOSII
DTMOSII
DTMOSI
DTMOSI
DTMOSI
DTMOSII
DTMOSII
DTMOSII
VGS = 10 V
Series
Part Number
Ratings
DTMOSII
TK20J60U
600 V/20 A
π-MOSVI
2SK3911
600 V/20 A
VDSF
Symbol
±I
GSS
IDSS
Qg
Vth
Test Conditions
VGS condition*, VDS = 0 V
VDS = 600 V, VGS = 0 V
V(BR)DSS ID = 10 mA, VGS = 0 V
I
DR
= 20 A, VGS = 0 V
VDS = 10 V, ID = 1 mA
RDS(ON) V
GS
= 10 V, I
D
= 10 A
V
DD
= 400 V, VGS = 10 V
I
D
= 20 A
Min Typ. Max
± 1
— 100
600 —
3.0 — 5.0
27
— –1.7
0.165 0.19
Min Typ. Max Unit
± 10 μA
100 μA
600 — V
2.0 — 4.0 V
—60nC
— –1.7 V
0.22 0.32 Ω
• Low ON-resistance TK40J60T: 80 mΩ (max) @VGS = 10 V, ID = 20 A
• Low gate charge TK20A60U: Qg = 27 nC typ., 600 V / 20 A
• The rugged internal drain-source diode is not damaged at di/dt = 500 A/μs (@VDS = 400 V, 150˚C).
6-2 Super-Junction DTMOS Series (VDSS = 600 V, 650 V)
The DTMOS devices employ a new super-junction structure that enables an ultra-low ON-resistance with the maximum
VDSS rating of 600 V. The DTMOS Series helps reduce the power consumption and size of electronic equipment.
Characteristic
Gate leakage current
Drain cut-off current
Gate threshold voltage
Total gate charge
Diode forward voltage
Drain-source
breakdown voltage
Drain-source
ON-resistance
41
4“ swam 5mg: zskzuz (sum-m Semi) In = mm 2m Maw
2SK2842 (Standard Series)
2SK3313 (High Speed)
0
200 ns/div
ID= 10 A/div
200 ns/div
0
ID= 10 A/div
Standard Series
600-V MACH-II 2SK3911
VDS: 100 V/div
VGS: 2 V/div
10 nC/div
Qg = 92 nC
VDS: 100 V/div
VGS: 2 V/div
10 nC/div
Qg = 56 nC
40% Qg
reduction
Higher Speed
Characteristics of the MACHII Series
40% reduction in Qg losses
Characteristics of the High-Speed Diode Series
Faster internal diode
• High-Speed Diode Series (HSD Series)
Product Offerings
• MACH Series
2SK3310
2SK3309
2SK3743
2SK3403
2SK3312
2SK3437
2SK3911
2SK3907
2SK3399
0.65
0.65
0.4
0.4
1.25
1
0.32
0.23
0.75
450
450
450
450
600
600
600
500
600
10
10
13
13
6
10
20
23
10
2SK3126
2SK2777
2SK2996
2SK2866
TO-220NIS
TO-220FL/SM
TO-220NIS
TO-220FL/SM
TO-220FL/SM
TO-220FL/SM
TO-3P(N)
TO-3P(N)
TO-220FL/SM
Absolute Maximum Ratings
AC adapters
Switching power
supplies
10
10
10
10
10
10
10
10
10
VGS
(V)
ID (A)
5
5
6
6
3
5
10
11.5
5
ID
(A)
40
65
65
40
100
80
150
150
100
PD (W)VDSS (V)
RDS(ON)
Max
(Ω)
23
23
34
34
25
28
60
60
35
Qg
Typ.
(nC)
Standard Type
Package
Applications Part Number Series
MACH-I
MACH-II
Absolute Maximum Ratings
Motor control
Inverters
Switching power
supplies
VGS
(V)
ID (A) ID
(A)
PD (W)VDSS (V)
RDS(ON)
Max
(Ω)
trr
Typ.
(ns) Standard Type
Package
Applications Part Number
2SK3313
2SK3314
2SK3131
2SK4016
2SK3868
2SK4015
2SK3906
2SK3936
2SK3947
2SK4042
2SK3417
TO-220NIS
TO-220SIS
TO-3P(N)
TO-3P(L)
TO-220SIS
TO-220SIS
TO-3P(N)
TO-3P(N)
TO-220SIS
TO-220SIS
TO-220FL/SM
0.62
1.7
0.49
0.11
0.50
0.86
0.33
0.25
1.4
0.97
1.8
35
40
150
250
50
45
150
150
40
40
50
500
500
500
500
600
600
600
500
600
500
500
12
5
15
50
13
10
20
23
6
8
5
10
10
10
10
10
10
10
10
10
10
10
6
2.5
7
25
6.5
5
10
11.5
3
4
2.5
90
150
105
105
160
170
400
380
150
185
60
2SK3563
2SK2842
2SK2698
2SK3132
2SK3797
2SK3569
2SK3911
2SK3907
2SK3562
2SK3561
2SK2991
To support the development of high-efficiency equipment, Toshiba has developed two series of high-speed power
MOSFETs: a high-speed switching series for AC adapters and switching power supplies; and a high-speed diode series for
motor controllers and inverter circuits.
• MACH Series: Achieves a higher switching speed than the existing π-MOS Series, which is currently well established in the market.
• High-Speed Diode Series: Achieves a higher internal diode speed by using lifetime control.
6-3 High-speed π-MOS Series (VDSS = 450 V to 600 V)
42
Mid- and High-VDSS MOSFETs
6
L2-π-MOSV and VI Series (VDSS = 30 V to 100 V)
π-MOSIV Series (VDSS = 800 V to 900 V)
π-MOSVI Series (VDSS = 450 V to 600 V)
VDSS
(V)
ID
(A)
PD
(W)
RDS(ON) (Ω)RDS(ON) (Ω)Qg Typ.
(nC)
Typ. Max Typ. Max
VGS (V) ID (A) VGS (V) ID (A)
PackagePart Number
2SK2614
2SK2507
2SK2886
2SK2744
2SK2550
2SK2551
2SK3051
2SK2745
2SK2989
2SK3506
2SJ360
2SJ378
2SJ438
2SJ349
2SJ401
2SJ334
2SJ402
2SJ508
2SJ509
2SJ380
2SJ619
2SJ620
2SJ464
2SJ412
2SJ537
2SJ507
0.032
0.034
0.014
0.015
0.024
0.0072
0.024
0.007
0.12
0.016
0.55
0.16
0.16
0.033
0.033
0.029
0.029
1.34
1.34
0.15
0.15
0.063
0.064
0.15
0.16
0.5
0.046
0.046
0.02
0.02
0.030
0.011
0.03
0.0095
0.15
0.02
0.73
0.19
0.19
0.045
0.045
0.038
0.038
1.9
1.9
0.21
0.21
0.09
0.09
0.21
0.19
0.7
10
10
10
10
10
10
10
10
10
10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
0.055
0.058
0.027
0.011
0.24
0.86
0.24
0.24
0.05
0.05
0.046
0.046
1.68
1.68
0.25
0.25
0.085
0.085
0.25
0.27
0.72
0.08
0.08
0.036
0.016
0.33
1.2
0.28
0.28
0.09
0.09
0.06
0.06
2.5
2.5
0.32
0.32
0.12
0.12
0.32
0.34
1.0
4
4
4
4
4
–4
–4
–4
–4
–4
–4
–4
–4
–4
–4
–4
–4
–4
–4
–4
–4
5
6
25
25
1.3
–0.5
–2.5
–2.5
–10
–10
–15
–15
–0.5
–0.5
–6
–6
–9
–9
–6
–1.3
–0.5
25
25
66
68
36
130
36
130
6.5
39
6.5
22
22
90
90
110
110
6.3
6.3
48
48
140
140
48
18
5.6
20
25
45
45
45
50
45
50
5
45
–1
–5
–5
–20
–20
–30
–30
–1
–1
–12
–16
–18
–18
–16
–5
–1
40
30
40
125
100
150
40
150
0.9
100
0.5
1.2
25
45
100
45
100
1.5
0.9
35
75
25
45
60
0.9
0.9
DP
TO-220NIS
TO-220NIS
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-220FL/SM
TO-3P(N)
LSTM
TO-3P(N)
PW-Mini
TPS
TO-220NIS
TO-220NIS
TO-220FL/SM
TO-220NIS
TO-220FL/SM
PW-Mini
LSTM
TO-220NIS
TFP
TFP
TO-220NIS
TO-220FL/SM
LSTM
LSTM
10
12
25
25
25
25
25
25
2.5
25
–0.5
–2.5
–2.5
–10
–10
–15
–15
–0.5
–0.5
–6
–6
–9
–9
–6
–2.5
–0.5
Equivalent
Predecessor Part PackagePart Number
Series
π-
MOS
VI
2SK3757
2SK3766
2SK3869
2SK3935
2SK3904
2SK3563
2SK3863
2SK4103
2SK3561
2SK3568
2SK4012
2SK3934
2SK4107
2SK3905
2SK4108
2SK3767
2SK3567
2SK3562
2SK3667
2SK3569
2SK3797
2SK3903
2SK3543
2SK3543
2SK3407
2SK2662
2SK3863
2SK2543
2SK2842
2SK2698
2SK2837
2SK3067
2SK2750
2SK2545
2SK2996
2SK2843
2
2
10
17
19
5
5
5
8
12
13
15
15
17
20
2
3.5
6
7.5
10
13
14
2.45
2.45
0.68
0.25
0.26
1.5
1.5
1.5
0.85
0.52
0.4
0.3
0.4
0.31
0.27
4.5
2.2
1.25
1.0
0.75
0.43
0.44
9
8
28
62
62
16
16
16
28
42
50
62
48
62
70
9
17
28
33
42
62
62
330
270
1050
3100
3100
550
550
550
1050
1500
2400
3100
2450
3100
3400
320
550
1050
1300
1500
3150
3100
450
500
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
TO-220SIS
DP
New Pw-Mold
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
V
DSS
(V) V
GS
= 10 VI
D
(A)
R
DS(ON)
Max (
Ω
)Q
g
Typ.
(nC)
C
iss
Typ.
(pF)
Absolute Maximum Ratings
600
Equivalent
Predecessor Part PackagePart NumberSeries
V
DSS
(V) V
GS
= 10 VI
D
(A)
R
DS(ON)
Max (
Ω
)QgTyp.
(nC)
Ciss Typ.
(pF)
Absolute Maximum Ratings
π-
MOS
IV
800
900
2SK3633
2SK3879
2SK3880
2SK4013
2SK3566
2SK3564
2SK3798
2SK3565
2SK3742
2SK3700
2SK4014
2SK4115
2SK3799
2SK3473
2SK3878
2SK4207
7
6.5
6.5
6
2.5
3
4
5
5
5
6
7
8
9
9
13
1.7
1.7
1.7
1.7
6.4
4.3
3.5
2.5
2.5
2.5
2.0
2.0
1.3
1.6
1.3
0.95
35
35
35
45
12
17
26
28
25
28
45
45
60
38
60
45
1500
1500
1500
1400
470
700
800
1150
1150
1150
1400
1650
2200
1450
2200
2790
2SK2746
2SK2718
2SK2700
2SK2717
2SK2717
2SK2610
2SK2749
2SK2611
TO-3P(N)
TO-220FL/SM
TO-3P(N)IS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
TO-220SIS
TO-3P(N)
TO-220SIS
TO-3P(N)
TO-3P(N)
TO-3P(N)
50
50
50
50
50
50
50
50
50
30
–50
–60
–60
–60
–60
–60
–60
–60
–100
–100
–100
–100
–100
–100
–100
–60
6-4 π-MOS Series
43
π-MOSV Series (VDSS = 150 V to 250 V)
V
DSS
(V)
I
D
(A)
P
D
(W)
R
DS(ON)
(Ω)R
DS(ON)
(Ω)
Qg Typ.
(nC)
Typ. Max Typ. Max
V
GS
(V) I
D
(A) V
GS
(V) I
D
(A)
60 1045 100 TO-3P(N) 0.022 0.03 25 0.04 0.055 4 15 60
60 1045 65 TO-220FL/SM 0.022 0.03 25 0.04 0.055 4 15 60
60 1045 100 TO-220FL/SM 0.013 0.017 25 0.019 0.025 4 25 110
60 10
45 100 TO-3P(N) ———0.022 0.03 25 60
60 1050 125 TO-3P(N) 0.013 0.017 25 0.019 0.025 4 25 110
60 1050 125 — — — — 110
TO-3P(N) 0.014 0.018 25
10100 1 0.9 LSTM 0.5 0.7 0.5 0.65 0.95 4 0.5 6.3
PW-Mini
100 101 0.5 0.5 0.7 0.5 0.65 0.95 4 0.5 6.3
1060 60 150 0.008 0.011 30 0.012 0.015 4 30 170
TO-3P(L)
60 1060 150 0.008 0.011 30 0.012 0.015 4 30 170
TO-3P(N)
TPS
100 103 1.3 0.28 0.35 2 0.36 0.45 4 2 13.5
10100 3 20 New PW-Mold 0.28 0.35 2 0.36 0.45 4 2 13.5
10100 3 20 New PW-Mold2 0.28 0.35 2 0.35 0.45 4 2 13.5
New PW-Mold
100 105 20 0.17 0.23 2.5 0.22 0.3 4 2.5 22
100 105 1.2 TPS 0.17 0.23 2.5 0.22 0.3 4 2.5 22
100 10
520New PW-Mold2 0.17 0.23 2.5 0.22 0.3 4 2.5 22
TO-220NIS
100 1020 35 0.068 0.085 10 0.09 0.13 4 10 50
100 1027 75 TO-220AB 0.066 0.085 15 0.09 0.13 4 15 50
TO-220FL/SM
100 1027 60 0.066 0.085 15 0.09 0.13 4 15 50
150 1018 100 TFP 0.08 0.12 9 0.09 0.18 4 9 57
LSTM 5.860 0.2 0.27 10 1 0.26 0.38 4 12 0.9
60 0.23 0.3 10 0.33 0.44 4 1 62 0.5 PW-Mini 1
2.560 0.12 0.16 10 0.2 0.3 4 1.3 12
5 1.2 TPS
60 0.039 0.055 10 10 0.06 0.090 4 5 2520 40 DP
TO-220NIS
60 0.036 0.046 10 12 0.057 0.08 4 12 3825 35
TO-220FL/SM 0.036 0.046 10 12 0.057 0.08 4 12 3860 25 40
TO-220NIS
2SK2233
2SK2266
2SK2376
2SK2398
2SK2173
2SK2445
2SK2962
2SK2963
2SK2267
2SK2313
2SK2200
2SK2201
2SK4018
2SK2399
2SK2400
2SK4019
2SK2391
2SK2314
2SK2789
2SK3387
2SK2961
2SK2615
2SK2229
2SK2782
2SK2232
2SK2311
2SK2385 60 0.022 0.03 10 18 0.04 0.055 4 15 6036 40
PackagePart Number
V
GS
(V)
P
D
(W)
R
DS(ON)
(
Ω
)
V
DSS
(V)
I
D
(A)
I
D
(A)
Qg
Typ.
(nC)
Typ. Max
Package
Absolute Maximum Ratings
Applications Part Number
DC-DC converters
Monitors
Motor controllers
2SJ618
2SJ407
2SJ567
2SJ676
2SJ680
2SJ610
2SJ512
2SJ516
2SK3670
2SK3205
2SK2882
2SK3497
2SK2992
2SK2835
2SK2381
2SK2920
2SK4020
2SK2350
2SK2965
2SK2382
2SK2401
2SK3625
2SK3444
2SK3176
2SK3462
2SK4022
2SK3342
2SK4021
2SK2417
2SK2914
2SK2508
2SK2598
2SK2993
2SK3994
2SK3388
2SK3445
2SK2967
2SK2995
0.8
1.6
1.6
1.6
1.85
1.0
0.6
1.0
0.36
0.08
2.2
0.56
0.56
0.56
0.52
0.26
0.15
0.13
0.13
0.065
0.067
0.038
1.2
1.2
0.8
0.8
0.42
0.42
0.18
0.18
0.082
0.090
0.082
0.09
0.048
0.048
TO-3P(N)
TO-220NIS
New PW-Mold
TPS
New PW-Mold2
PW-Mold
TO-220NIS
TO-220NIS
LSTM
PW-Mold
TO-220NIS
TO-3P(N)
PW-Mini
TPS
TO-220NIS
New PW-Mold
New PW-Mold2
TO-220NIS
TO-220NIS
TO-220NIS
TO-220FL/SM
TO-220FL/SM
TFP
TO-3P(N)
New PW-Mold
New PW-Mold2
New PW-Mold
New PW-Mold2
TO-220NIS
TO-220AB
TO-220NIS
TO-220FL/SM
TO-220FL/SM
TO-220NIS
TFP
TFP
TO-3P(N)
TO-3P(N)IS
130
30
20
1.3
20
20
30
35
0.9
20
45
130
1.5
1.3
25
20
20
30
35
45
75
100
125
150
20
20
20
20
30
20
45
60
100
45
125
125
150
90
–180
–200
–200
–200
–200
–250
–250
–250
150
150
150
180
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
–10
–5
–2.5
–2.5
–2.5
–2
–5
–6.5
0.67
5
18
10
1
5
5
5
5
8.5
11
15
15
25
25
30
3
3
4.5
4.5
7.5
7.5
13
13
20
20
20
20
30
30
0.37
1.0
2.0
2.0
2.0
2.55
1.25
0.8
1.7
0.5
0.12
0.15
3.5
0.8
0.8
0.8
0.8
0.4
0.26
0.18
0.18
0.082
0.082
0.052
1.7
1.7
1.0
1.0
0.5
0.5
0.25
0.25
0.105
0.105
0.105
0.105
0.068
0.068
–10
–10
–10
–10
–10
–10
–10
–10
4
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
18
20
10
10
10
24
22
29
4.6
12
57
3
10
10
10
10
17
30
40
40
44
44
125
12
12
10
10
20
20
40
40
100
45
100
45
132
132
–5
–2.5
–1.5
–1.5
–1.5
–1.0
–2.5
–3
0.5
2.5
9
5
0.5
2.5
2.5
2.5
2.5
5
5.5
10
10
12.5
12.5
15
1.5
1.5
2.5
2.5
3.5
3.5
6.5
6.5
10
10
10
10
15
15
6
Mid- and High-VDSS MOSFETs
44
π-MOSΙΙΙ Series (VDSS = 800 V to 1000 V)
π-MOSV Series (VDSS = 400 V to 700 V)
RDS(ON) (Ω)
PD(W)VDSS (V) ID(A)
Package
Typ. Max VGS(V) ID(A)
Absolute Maximum Ratings
Applications
Qg
Typ.
(nC)
2SK2603
2SK2746
2SK2607
2SK2884
2SK3301
2SK2733
2SK2608
2SK2719
2SK2847
2SK2883
2SK2845
2SK3017
2SK2606
2SK2613
2SK2968
3.0
3.0
1.9
1.3
1.0
1.0
15
8.0
8.0
3.73
3.7
1.05
1.2
1.05
1.4
3.6
3.6
2.2
1.7
1.2
1.2
20
9.0
9.0
4.3
4.3
1.25
1.4
1.25
1.7
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1.5
15
3.0
3.5
4.0
4.0
0.5
0.5
0.5
1.5
1.5
4.0
4.0
4
8.0
TO-220AB
TO-3P(N)
TO-3P(N)
TO-220FL/SM
PW-Mold
TO-220AB
TO-220AB
TO-3P(N)
TO-3P(N)IS
TO-220FL/SM
DP
TO-3P(N)IS
TO-3P(N)IS
25
25
34
55
68
68
6
15
15
25
25
58
70
70
65
TO-3P(N)
3
5
7
9
1
1
3
3
8
3
1
8.5
8
8
10 TO-3P(N)
800
800
800
800
900
900
900
900
900
800
900
900
800
1000
900
100
150
150
100
20
60
100
125
85
75
40
90
85
150
150
Qg
Typ.
(nC)
ID
(A)
VDSS
(V)
PD
(W) Typ. Max VGS
(V)
ID
(A)
RDS(ON)
(Ω)
Package
Absolute Maximum Ratings
Applications Part Number
2SK3498
2SK2838
2SK2679
2SK2952
2SK2841
2SK2949
2SK3499
2SK3472
2SK3374
2SK4023
2SK3544
2SK2998
2SK3302
2SK3471
2SK2599
2SK3373
2SK2862
2SK2991
2SK3466
2SK2542
2SK2776
2SK3538
2SK2601
2SK3068
2SK3398
2SK2916
2SK2917
2SK3132
2SK3371
2SK4026
2SK2846
2SK2865
2SK4002
2SK4003
2SK3975
2SK3085
2SK3130
2SK2777
2SK2602
2SK3312
2SK3438
2SK2889
2SK2866
2SK2699
2SK2953
2SK3265
2SK3453
400
400
400
400
400
400
400
450
450
450
450
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
20
40
35
40
80
80
80
20
20
20
100
0.9
1.3
0.5
1.3
20
25
50
50
80
65
65
125
100
100
80
90
250
20
20
1.3
20
20
20
20
75
40
65
125
65
80
100
125
150
90
45
80
PW-Mold
TO-220FL/SM
TO-220NIS
TO-220NIS
TO-220AB
TO-220FL/SM
TFP
New PW-Mold
TPS
New PW-Mold2
TFP
LSTM
TPS
PW-Mini
TPS
New PW-Mold
TO-220NIS
TO-220FL/SM
TO-220FL/SM
TO-220AB
TO-220FL/SM
TFP
TO-3P(N)
TO-220FL/SM
TFP
TO-3P(N)IS
TO-3P(N)IS
TO-3P(L)
New PW-Mold
New PW-Mold2
TPS
New PW-Mold
New PW-Mold2
New PW-Mold2
New PW-Mold
TO-220AB
TO-220NIS
TO-220FL/SM
TO-3P(N)
TO-220FL/SM
TFP
TO-220FL/SM
TO-220AB
TO-3P(N)
TO-3P(N)IS
TO-220NIS
TO-3P(N)IS
4.2
0.84
0.84
0.4
0.4
0.4
0.4
4.0
3.7
4.0
0.29
10
10
10
2.9
2.9
2.9
1.35
1.35
0.75
0.75
0.75
0.56
0.4
0.4
0.35
0.21
0.07
6.4
6.4
4.2
4.2
4.2
1.7
1.7
1.7
1.26
0.9
0.9
0.95
0.78
0.54
0.54
0.5
0.31
0.72
0.72
5.5
1.2
1.2
0.55
0.55
0.55
0.55
4.6
4.6
4.6
0.4
18
18
18
3.2
3.2
3.2
1.5
1.5
0.85
0.85
0.85
1.0
0.52
0.52
0.4
0.27
0.095
9.0
9
5.0
5.0
5
2.2
2.2
2.2
1.55
1.25
1.25
1.25
1.0
0.75
0.75
0.65
0.4
1.0
1.0
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
0.5
3
3
5
5
5
5
0.5
5
0.5
6
0.25
0.25
0.25
1
1
1
2.5
2.5
4
4
4
5
6
6
7
10
25
0.5
0.5
1
1
1
1.5
1.5
1.8
3
3
3
3
5
5
5
6
8
5
5
5.7
17
17
34
34
34
34
5
5
5
34
3.8
3.8
3.8
9
9
9
17
17
30
30
30
30
45
45
58
80
280
9
9
9
9
9
20
20
20
30
30
30
22
28
45
45
58
80
53
53
1
5.5
5.5
8.5
10
10
10
1
1
1
13
0.5
0.5
0.5
2
2
3
5
5
8
8
8
10
12
12
14
18
50
1
1
2
2
2
3
3
3.5
6
6
6
6
10
10
10
10
12
10
10
115-Vac
switching power supplies
Ballast inverters
Motor controllers
45
Part Number
Series Package Page
Main Characteristics
RDS(ON)
Max
(Ω)
VDSS
(V)
ID
(A)
Part Number
Series Package Page
Main Characteristics
RDS(ON)
Max
(Ω)
VDSS
(V)
ID
(A)
2SK2162
2SK2173
2SK2200
2SK2201
2SK2229
2SK2232
2SK2233
2SK2266
2SK2267
2SK2274
2SK2311
2SK2313
2SK2314
2SK2350
2SK2376
2SK2381
2SK2382
2SK2385
2SK2391
2SK2398
2SK2399
2SK2400
2SK2401
2SK2417
2SK2445
2SK2467
2SK2507
2SK2508
2SK2542
2SK2550
2SK2551
2SK2598
2SK2599
2SK2601
2SK2602
2SK2603
2SK2606
2SK2607
2SK2608
2SK2613
2SK2614
2SK2615
2SK2679
2SK2699
2SK2719
2SK2733
2SK2744
2SK2745
2SK2776
2SK2777
2SK2782
2SK2789
2SJ168
2SJ200
2SJ201
2SJ304
2SJ305
2SJ312
2SJ313
2SJ334
2SJ338
2SJ343
2SJ344
2SJ349
2SJ360
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ438
2SJ440
2SJ464
2SJ507
2SJ508
2SJ509
2SJ512
2SJ516
2SJ537
2SJ567
2SJ610
2SJ618
2SJ619
2SJ620
2SJ668
2SJ669
2SJ676
2SJ680
2SJ681
2SK1062
2SK1119
2SK1359
2SK1365
2SK1381
2SK1382
2SK1486
2SK1489
2SK1529
2SK1530
2SK1544
2SK1930
2SK2009
2SK2013
π
-
MOSII
L2-
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
π
-
MOSII.5
L2-
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
π
-
MOSV
L2-
π
-
MOSV
π
-
MOSV
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
π
-
MOSV
π
-
MOSV
L2-
π
-
MOSV
π
-
MOSII
L2-
π
-
MOSV
π
-
MOSV
π
-
MOSV
L2-
π
-
MOSV
L2-
π
-
MOSV
π
-
MOSV
π
-
MOSV
π
-
MOSV
π
-
MOSV
π
-
MOSIII
π
-
MOSIII
π
-
MOSIII
π
-
MOSIII
π
-
MOSIII
L2-
π
-
MOS