SIP32413/14 Datasheet by Vishay Siliconix

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Vishay Siliconix
SiP32413, SiP32414, SiP32416
Document Number: 71437
S11-2472-Rev. B, 19-Dec-11
www.vishay.com
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Dual 2 A, 1.2 V, Slew Rate Controlled Load Switch
DESCRIPTION
SiP32413, SiP32414 and SiP32416 are slew rate controlled
load switches that is designed for 1.1 V to 5.5 V operation.
The devices guarantee low switch on-resistance at 1.2 V
input. SiP32413 and SiP32414 feature a controlled soft-on
slew rate of typical 150 µs that limits the inrush current for
designs of capacitive load or noise sensitive loads. SiP32416
features a longer slew rate of typical 2.5 ms to keep the peak
of the inrush current even lower.
The devices feature a low voltage control logic interface
(On/Off interface) that can interface with low voltage digital
control without extra level shifting circuit. The SiP32414 and
SiP32416 also integrate output discharge switches that
enable fast shutdown load discharge. When the switches are
off, they provide the reverse blocking to prevent high current
flowing into the power source.
All SiP32413, SiP32414 and SiP32416 are available in
TDFN8 2 mm x 2 mm package. Each switch in each device
can support over 2 A of continuous current.
FEATURES
Halogen-free according to IEC 61249-2-21
definition
1.1 V to 5.5 V operation voltage range
•62 m typical from 2 V to 5 V
•Low R
ON down to 1.2 V
Slew rate controlled turn-on:
150 µs at 3.6 V for SiP32413, SiP32414
2.5 ms at 3.6 V for SiP32416
Fast shutdown load discharge for SiP32414 and
SiP32416
Low quiescent current
< 1 µA when disabled
6.7 µA at VIN = 1.2 V
Switch off reversed blocking
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Cellular phones
Portable media players
Digital camera
•GPS
Computers
Portable instruments and healthcare devices
TYPICAL APPLICATION CIRCUIT
Figure 1 - SiP32413, SiP32414, SiP32416 Typical Application Circuit
SiP32413, SiP32414, SiP32416
(for one switch)
INVOUT
OUT
VIN
GND
GND
GND
CNTRL
CNTRL
C
4.7 µF
INC
0.1 µF
OUT
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Document Number: 71437
S11-2472-Rev. B, 19-Dec-11
Vishay Siliconix
SiP32413, SiP32414, SiP32416
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note:
GE4 denotes halogen-free and RoHS compliant
Notes:
a. Device mounted with all leads and power pad soldered or welded to PC board, see PCB layout.
b. Derate 10.5 mW/°C above TA = 70 °C, see PCB layout.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Temperature Range Package Marking Part Number
- 40 °C to 85 °C TDFN8
2 mm x 2 mm
AA SiP32413DNP-T1-GE4
AB SiP32414DNP-T1-GE4
AG SiP32416DNP-T1-GE4
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Supply Input Voltage (VIN) - 0.3 to 6
V
Enable Input Voltage (VEN) - 0.3 to 6
Output Voltage (VOUT)- 0.3 to 6
Maximum Continuous Switch Current (Imax.)2.4 A
Maximum Pulsed Current (Pulsed at 1 ms, 10 % Duty Cycle) 3
ESD Rating (HBM) 4000 V
Storage Temperature (Tstg)- 65 to 150 °C
Thermal Resistance (JA)a95 °C/W
Power Dissipation (PD)a, b 580 mW
RECOMMENDED OPERATING RANGE
Parameter Limit Unit
Input Voltage Range (VIN) 1.1 to 5.5 V
Operating Junction Temperature Range (TJ) - 40 to 125 °C
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Document Number: 71437
S11-2472-Rev. B, 19-Dec-11
www.vishay.com
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Vishay Siliconix
SiP32413, SiP32414, SiP32416
This document is subject to change without notice.
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Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For VIN outside this range consult typical EN threshold curve.
d. Not tested, guarantee by design.
SPECIFICATIONS
Parameter Symbol
Test Conditions Unless Specified
VIN = 5 V, TA = - 40 °C to 85 °C
(Typical values are at TA = 25 °C)
Limits
- 40 °C to 85 °C
Unit
Min.a Typ.bMax.a
Operating VoltagecVIN 1.1 - 5.5 V
Quiescent Current IQ
VIN = 1.2 V, CNTRL = active - 6.7 14
µA
VIN = 1.8 V, CNTRL = active - 14 24
VIN = 2.5 V, CNTRL = active - 25 40
VIN = 3.6 V, CNTRL = active - 40 60
VIN = 4.3 V, CNTRL = active - 52 75
VIN = 5 V, CNTRL = active - 71 99
Off Supply Current IQ(off) CNTRL = inactive, OUT = open - - 1
Off Switch Current IDS(off) CNTRL = inactive, OUT = 0 - - 1
Reverse Blocking Current IRB VOUT = 5 V, VIN = 1.2 V, VEN = inactive --10
On-Resistance RDS(on)
VIN = 1.2 V, IL = 100 mA, TA = 25 °C - 66 76
m
VIN = 1.8 V, IL = 100 mA, TA = 25 °C - 62 72
VIN = 2.5 V, IL = 100 mA, TA = 25 °C - 62 72
VIN = 3.6 V, IL = 100 mA, TA = 25 °C -6272
VIN = 4.3 V, IL = 100 mA, TA = 25 °C - 62 72
VIN = 5 V, IL = 100 mA, TA = 25 °C -6272
On-Resistance Temp.-Coefficient TCRDS - 3900 - ppm/°C
CNTRL Input Low VoltagecVIL
VIN = 1.2 V - - 0.3
V
VIN = 1.8 V - - 0.4d
VIN = 2.5 V - - 0.5d
VIN = 3.6 V - - 0.6d
VIN = 4.3 V - - 0.7d
VIN = 5 V - - 0.8d
CNTRL Input High VoltagecVIH
VIN = 1.2 V 0.9d--
VIN = 1.8 V 1.2d--
VIN = 2.5 V 1.4d--
VIN = 3.6 V 1.6d--
VIN = 4.3 V 1.7d--
VIN = 5 V 1.8 - -
EN Input Leakage ISINK VEN = 5.5 V - - 1 µA
Output Pulldown Resistance RPD
CNTRL = inactive, TA = 25 °C
(SiP32414 and SiP32416 only) - 217 280
Output Turn-On Delay Time SiP32413,
SiP32414
td(on)
VIN = 3.6 V, RLOAD = 10 ,
CLOAD = 0.1 µF, TA = 25 °C
- 140 210
µsOutput Turn-On Rise Time t(on) 80 150 220
Output Turn-Off Delay Time td(off) -0.271
Output Turn-On Delay Time
SiP32416
td(on) -2-
msOutput Turn-On Rise Time t(on) 1.2 2.5 3.8
Output Turn-Off Delay Time td(off) - - 0.001
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Document Number: 71437
S11-2472-Rev. B, 19-Dec-11
Vishay Siliconix
SiP32413, SiP32414, SiP32416
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PIN CONFIGURATION
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
Figure 2 - TDFN8 2 mm x 2 mm Package
8
7
6
5
1
2
3
4
OUT1
GND
GND
OUT2
IN1
CNTRL1
CNTRL2
IN2
Bottom View
PIN DESCRIPTION
Pin Number Name Function
1 IN1 This is the input pin of the switch side 1
2 CNTRL1 This is the control pin of the switch side 1
3 CNTRL2 This is the control pin of the switch side 2
4 IN2 This is the input pin of the switch side 2
5 OUT2 This is the output pin of the switch side 2
6 GND Ground connection
7 GND Ground connection
8 OUT1 This is the output pin of the switch side 1
TRUTH TABLE SiP32413
CNTRL1 CNTRL2 SW1 SW2
00ONOFF
0 1 ON ON
10OFFOFF
11OFFON
TRUTH TABLE SiP32414, SiP32416
CNTRL1 CNTRL2 SW1 SW2
00OFFOFF
01OFFON
10ONOFF
1 1 ON ON
Figure 3 - Quiescent Current vs. Input Voltage
V
IN
(V)
I
Q
- Quiescent Current (µA)
0
20
40
60
80
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Figure 4 - Quiescent Current vs. Temperature
Temperature (°C)
IQ - Quiescent Current (µA)
- 40 - 20 0 20 40 60 80 100
0
10
20
30
40
50
60
70
80
90
VIN = 5 V
VIN = 3.6 V
VIN = 1.2 V
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Document Number: 71437
S11-2472-Rev. B, 19-Dec-11
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SiP32413, SiP32414, SiP32416
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TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
Figure 5 - SiP32413 Off Supply Current vs. VIN
Figure 7 - SiP32414 and SiP32416 Off Supply Current vs. VIN
Figure 9 - Off Switch Current vs. Input Voltage
VIN (V)
IQ(off) - Off Supply Current (nA)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
SiP32413
VIN
(V)
I
Q(OFF)
- Off Supply Current (nA)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
SiP32414
SiP32416
V
IN
(V)
I
DS(off)
- Off Switch Current (nA)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Figure 6 - SiP32414 Off Supply Current vs. Temperature
Figure 8 - SiP32414 and SiP32416 Off Supply Current
vs. Temperature
Figure 10 - Off Switch Current vs. Temperature
Temperature (°C)
I
Q(off)
- Off Switch Current (nA)
- 40 - 20 0 20 40 60 80 100
0.001
0.01
0.1
1
10
100
SiP32413
V
IN
= 5 V
V
IN
= 3.6 V
V
IN
= 1.2 V
Temperature (°C)
I
Q(OFF)
- Off Supply Current (nA)
- 40 - 20 0 20 40 60 80 100
0.001
0.01
0.1
1
10
100
1000
SiP32414
SiP32416
V
IN
= 1.2 V
V
IN
= 3.6 V
V
IN
= 5 V
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Document Number: 71437
S11-2472-Rev. B, 19-Dec-11
Vishay Siliconix
SiP32413, SiP32414, SiP32416
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
Figure 11 - RDS(on) vs. Input Voltage
Figure 13 - SiP32414 and SiP32416 Output Pull Down
vs. Input Voltage
Figure 15 - Reverse Blocking Current vs. Output Voltage
VIN (V)
RDS - On-Resistance (mΩ)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
60
62
64
66
68
70
72
IO = 2 A
IO = 1.5 A IO = 1 A
IO = 0.5 A IO = 0.1 A
VIN
(V)
R
PD
- Output Pulldown Resistance (Ω)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
100
150
200
250
300
350
400
450
500
550
SiP32414 and SiP32416 only
V
IN
= V
OUT
V
OUT
(V)
I
IN
- Input Current (nA)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0.01
0.1
1
10
100
1000
V
IN
= 1.2 V
V
CNTRL
= inactive
Figure 12 - RDS(on) vs. Temperature
Figure 14 - SiP32414 and SiP32416 Output Pull Down
vs. Temperature
Figure 16 - Reverse Blocking Current vs. Temperature
Temperature (°C)
RDS - On-Resistance (mΩ)
- 40 - 20 0 20 40 60 80 100
40
45
50
55
60
65
70
75
IO = 0.1 A
VIN = 5 V
Temperature (°C)
R
PD
- Output Pulldown Resistance (Ω)
- 40 - 20 0 20 40 60 80 100
205
210
215
220
225
230
235
SiP32414 and SiP32416 only
V
OUT
= V
IN
= 5 V
Temperature (°C)
IIN - Input Current (nA)
- 40 - 20 0 20 40 60 80 100
10
100
1000
VIN = 1.2 V
VOUT = 5 V
VCNTRL = inactive
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SiP32413, SiP32414, SiP32416
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Document Number: 71437
S11-2472-Rev. B, 19-Dec-11
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TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
Figure 17 - CNTRL Threshold Voltage vs. Input Voltage
Figure 19 - SiP32413 and SiP32414 Rise Time
vs. Temperature
Figure 21 - SiP32416 Turn-On Delay Time vs. Temperature
VIN (V)
CNTRL - Threshold Voltage (V)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIH
VIL
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Temperature (°C)
t
(on)
- Turn-On Rise Time (µs)
130
140
150
160
170
180
190
200
210
220
- 40 - 20 0 20 40 60 80 100
V
IN
= 5 V
C
L
= 0.1 µF
R
L
= 10 Ω
SiP32413, SiP32414
Temperature (°C)
t
d(on)
- Turn-On Delay Time (ms)
- 40 - 20 0 20 40 60 80 100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
IN
= 5 V
C
L
= 0.1 µF
R
L
= 10 Ω
Figure 18 - SiP32413 and SiP32414 Turn-On Delay Time
vs. Temperature
Figure 20 - SiP32413 and SiP32414 Turn-Off Delay Time
vs. Temperature
Figure 22 - SiP32416 Rise Time vs. Temperature
Temperature (°C)
t
d(on)
- Turn-On Delay Time (µs)
60
70
80
90
100
110
120
130
140
150
160
- 40 - 20 0 20 40 60 80 100
V
IN
= 5 V
C
L
= 0.1 µF
R
L
= 10 Ω
SiP32413, SiP32414
Temperature (°C)
t
d(off)
- Turn-Off Delay Time (µs)
0.10
0.12
0.14
0.16
0.18
0.20
0.22
- 40 - 20 0 20 40 60 80 100
V
IN
= 5 V
C
L
= 0.1 µF
R
L
= 10 Ω
SiP32413, SiP32414
Temperature (°C)
tR - Rise Time (ms)
- 40 - 20 0 20 40 60 80 100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VIN = 5 V
CL = 0.1 µF
RL = 10 Ω
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Document Number: 71437
S11-2472-Rev. B, 19-Dec-11
Vishay Siliconix
SiP32413, SiP32414, SiP32416
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
TYPICAL WAVEFORMS
Figure 23 - SiP32416 Turn-Off Delay Time vs. Temperature
Temperature (°C)
t
d(off)
- Turn-Off Delay Time (µs)
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
- 40 - 20 0 20 40 60 80 100
V
IN
= 5 V
C
L
= 0.1 µF
R
L
= 10 Ω
Figure 24 - SiP32413 Channel 1 Switching
(VIN = 3.6 V, RL = 7.2 )
Figure 26 - SiP32413 Channel 1 Switching
(VIN = 5 V, RL = 10 )
VCNTRL
(2 V/div.)
VOUT (1 V/div.)
IOUT (200 mA/div.)
Time (100 µs/div.)
RL = 7.2 Ω
CL = 0.1 µF
VCNTRL
(2 V/div.)
IOUT (200 mA/div.)
Time (100 µs/div.)
RL = 10 Ω
CL = 0.1 µF
VOUT (2 V/div.)
Figure 25 - SiP32413 Channel 1 Turn-Off
(VIN = 3.6 V, RL = 7.2 )
Figure 27 - SiP32413 Channel 1 Turn-Off
(VIN = 5 V, RL = 10 )
VCNTRL (2 V/div.)
VOUT (1 V/div.)
IOUT (200 mA/div.)
Time (1 µs/div.)
RL = 7.2 Ω
CL = 0.1 µF
VCNTRL (2 V/div.)
IOUT (200 mA/div.)
Time (1 µs/div.)
RL = 10 Ω
CL = 0.1 µF
VOUT (2 V/div.)
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Figure 28 - SiP32413 Channel 2 and SiP32414 Switching
(VIN = 3.6 V, RL = 7.2 )
Figure 30 - SiP32413 Channel 2 and SiP32414 Switching
(VIN = 5 V, RL = 10 )
Figure 32 - SiP32416 Switching
(VIN = 3.6 V, RL = 7.2 )
VCNTRL
(2 V/div.)
VOUT (1 V/div.)
IOUT (200 mA/div.)
Time (100 µs/div.)
RL = 7.2 Ω
CL = 0.1 µF
VCNTRL
(2 V/div.)
IOUT (200 mA/div.)
Time (100 µs/div.)
RL = 10 Ω
CL = 0.1 µF
VOUT (2 V/div.)
VCNTRL
(2 V/div.)
RL = 7.2 Ω
CL = 0.1 µF
VOUT (1 V/div.)
IOUT (200 mA/div.)
Time (2 ms/div.)
Figure 29 - SiP32413 Channel 2 and SiP32414 Turn-Off
(VIN = 3.6 V, RL = 7.2 )
Figure 31 - SiP32413 Channel 2 and SiP32414 Turn-Off
(VIN = 5 V, RL = 10 )
Figure 33 - SiP32416 Turn-Off
(VIN = 3.6 V, RL = 7.2 )
VCNTRL (2 V/div.)
IOUT (200 mA/div.)
Time (1 µs/div.)
RL = 7.2 Ω
CL = 0.1 µF
VOUT (1 V/div.)
VCNTRL (2 V/div.)
IOUT (200 mA/div.)
Time (1 µs/div.)
RL = 10 Ω
CL = 0.1 µF
VOUT (2 V/div.)
VCNTRL
(2 V/div.)
RL = 7.2 Ω
CL = 0.1 µF
VOUT (1 V/div.)
IOUT (200 mA/div.)
Time (1 µs/div.)
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Document Number: 71437
S11-2472-Rev. B, 19-Dec-11
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SiP32413, SiP32414, SiP32416
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BLOCK DIAGRAM
PCB LAYOUT
Figure 34 - SiP32416 Switching
(VIN = 5 V, RL = 10 )
VCNTRL
(2 V/div.)
RL = 10 Ω
CL = 0.1 µF
VOUT (2 V/div.)
IOUT (200 mA/div.)
Time (2 ms/div.)
Figure 35 - SiP32416 Turn-Off
(VIN = 5 V, RL = 10 )
VCNTRL
(2 V/div.)
RL = 10 Ω
CL = 0.1 µF
VOUT (2 V/div.)
IOUT (200 mA/div.)
Time (1 µs/div.)
Figure 36 - Functional Block Diagram
+
-
-
+
IN1
CNTRL1
CNTRL2
IN2
OUT1
GND
OUT2
SiP32414 and SiP32416
only
Reverse
Blocking
Reverse
Blocking
Charge
Pump
Charge
Pump
Logic
Control
Logic
Control
Turn On
Slew Rate
Control
Turn On
Slew Rate
Control
Top Bottom
Figure 37 - PCB Layout for TDFN8 2 mm x 2 mm (type: FR4, size: 1.2" x 1.3", thickness: 0.062", copper thickness: 2 oz.)
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DETAILED DESCRIPTION
SiP32413, SiP32414 and SiP32416 are dual n-channel
power MOSFETs designed as high side load switch with
slew rate control to prevent in-rush current. Once enable the
device charges the gate of the power MOSFET to 5 V gate
to source voltage while controlling the slew rate of the turn on
time. The mostly constant gate to source voltage keeps the
on resistance low through out the input voltage range. For
SiP32414, when disable the output discharge circuit turns on
to help pull the output voltage to ground more quickly. For all
parts, in disable mode, the reverse blocking circuit is
activated to prevent current from going back to the input in
case the output voltage is higher than the input voltage. Input
voltage is needed for the reverse blocking circuit to work
properly, it can be as low as VIN(min.).
APPLICATION INFORMATION
Input Capacitor
While bypass capacitors on the inputs are not required,
2.2 µF or larger capacitors for CIN is recommended in almost
all applications. The bypass capacitors should be placed as
physically close as possible to the device’s input to be
effective in minimizing transients on the input. Ceramic
capacitors are recommended over tantalum because of their
ability to withstand input current surges from low impedance
sources such as batteries in portable devices.
Output Capacitor
A 0.1 µF capacitor or larger across VOUT and GND is
recommended to insure proper slew operation. COUT may be
increased without limit to accommodate any load transient
condition with only minimal affect on the turn on slew rate
time. There are no ESR or capacitor type requirement.
Control
The CNTRL pins are compatible with both TTL and CMOS
logic voltage levels.
Protection Against Reverse Voltage Condition
SiP32413, SiP32414 and SiP32416 contain reverse blocking
circuitries to protect the current from going to the input from
the output in case where the output voltage is higher than the
input voltage when the main switch is off. Supply voltages as
low as the minimum required input voltage are necessary for
these circuitries to work properly.
Thermal Considerations
All three parts are designed to maintain constant output load
current. Due to physical limitations of the layout and
assembly of the device the maximum switch current is 2.4 A,
as stated in the Absolute Maximum Ratings table. However,
another limiting characteristic for the safe operating load
current is the thermal power dissipation of the package. To
obtain the highest power dissipation (and a thermal
resistance of 95) the power pad of the device should be
connected to a heat sink on the printed circuit board.
The maximum power dissipation in any application is
dependant on the maximum junction temperature,
TJ(max.) = 125 °C, the junction-to-ambient thermal resistance
for the TDFN4 1.2 mm x 1.6 mm package, J-A = 95 °C/W,
and the ambient temperature, TA, which may be formulaically
expressed as:
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to about
580 mW.
So long as the load current is below the 2.4 A limit, the
maximum continuous switch current becomes a function two
things: the package power dissipation and the RDS(ON) at the
ambient temperature.
As an example let us calculate the worst case maximum load
current at TA = 70 °C. The worst case RDS(ON) at 25 °C
occurs at an input voltage of 1.2 V and is equal to 75 m. The
RDS(ON) at 70 °C can be extrapolated from this data using
the following formula:
RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x T)
Where TC is 3400 ppm/°C. Continuing with the calculation
we have
RDS(ON) (at 70 °C) = 75 m x (1 + 0.0034 x (70 °C - 25 °C))
= 86.5 m
The maximum current limit is then determined by
which in case is 2.6 A, assuming one switch turn on at a time.
Under the stated input voltage condition, if the 2.6 A current
limit is exceeded the internal die temperature will rise and
eventually, possibly damage the device.
To avoid possible permanent damage to the device and keep
a reasonable design margin, it is recommended to operate
the device maximum up to 2.4 A only as listed in the Absolute
Maximum Ratings table.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71437.
95
125
(max.)
(max.)
A
A
J
A
J T
TT
P
-
=
-
=
-
θ
) (
(max.)
(max.)
ON DS
LOAD
R
P
I <
) — V VISHAY. .com/drm791000 www.msha
Package Information
www.vishay.com Vishay Siliconix
Revison: 29-Jun-15 1Document Number: 67493
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Case Outline for TDFN8 2 x 2
Note
(1) All dimensions are in millimeters which will govern.
(2) Max. package warpage is 0.05 mm.
(3) Max. allowable burrs is 0.076 mm in all directions.
(4) Pin #1 ID on top will be laser/ink marked.
(5) Dimension applies to meatlized terminal and is measured
between 0.20 mm and 0.25 mm from terminal tip.
(6) Applied only for terminals.
(7) Applied for exposed pad and terminals.
Top View
Side View
Bottom View
KK
L
D2
Pin 1 Indicator
(Optional)
8
7
6
5
1
2
3
4
b(5)
e
E2
1
2
3
4
8
7
6
5
D
E
A
A3
A1
(7)
(6)
0.05 C
Index Area
(D/2 x E/2)
MILLIMETERS INCHES
DIM. MIN. NOM. MAX. MIN. NOM. MAX.
A 0.50 0.55 0.60 0.020 0.022 0.024
A1 0.00 - 0.05 0.000 - 0.002
A3 0.152 REF 0.006 REF
b 0.18 0.23 0.28 0.007 0.009 0.011
D 1.95 2.00 2.05 0.077 0.079 0.081
D2 0.75 0.80 0.85 0.030 0.031 0.033
e 0.50 BSC 0.020 BSC
E 1.95 2.00 2.05 0.077 0.079 0.081
E2 1.40 1.45 1.50 0.055 0.057 0.059
K - 0.25 - - 0.010 -
L 0.30 0.35 0.40 0.012 0.014 0.016
ECN: T15-0301-Rev. B, 29-Jun-15
DWG: 5997
— VISHAY. V
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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