BFR30, BFR31 Datasheet by NXP USA Inc.

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DATA SHEET
Product specification
Supersedes data of April 1991 1997 Dec 05
DISCRETE SEMICONDUCTORS
BFR30; BFR31
N-channel field-effect transistors
1997 Dec 05 2
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
Low level general purpose amplifiers in thick and
thin-film circuits.
PINNING - SOT23
Note
1. Drain and source are interchangeable.
PIN SYMBOL DESCRIPTION
1 d drain(1)
2 s source(1)
3ggate
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling.
Fig.1 Simplified outline and symbol.
Marking codes:
BFR30: M1p.
BFR31: M2p.
handbook, halfpage
12
gd
s
3
Top view
MAM385
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 25 V
VGSO gate-source voltage open drain 25 V
Ptot total power dissipation Tamb 40 C250 mW
IDSS drain current VGS =0; V
DS =10V
BFR30 4 10 mA
BFR31 1 5 mA
yfscommon-source transfer admittance ID=1mA; V
DS =10V; f=1kHz
BFR30 1 4 mS
BFR31 1.5 4.5 mS
1997 Dec 05 3
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 25 V
VDGO drain-gate voltage open source 25 V
VGSO gate-source voltage open drain 25 V
IDdrain current 10 mA
IGforward gate current (DC) 5mA
Ptot total power dissipation Tamb 40 C; note 1; see Fig.2 250 mW
Tstg storage temperature 65 +150 C
Tjoperating junction temperature 150 C
Fig.2 Power derating curve.
handbook, halfpage
0
Tamb (°C)
Ptot
(mW)
300
200
100
040 200
80 120 160
MDA245
THERMAL CHARACTERISTICS
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 430 K/W
1997 Dec 05 4
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
CHARACTERISTICS
Tj=25C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IGSS gate cut-off current VDS =0; V
GS =10 V 0.2 nA
IDSS drain current VGS =0; V
DS =10V
BFR30 4 10 mA
BFR31 1 5 mA
VGS gate-source voltage ID=1mA; V
DS =10V
BFR30 0.7 3V
BFR31 0 1.3 V
VGS gate-source voltage ID=50A; VDS =10V
BFR30 4V
BFR31 2V
VGSoff gate-source cut-off voltage ID=0.5nA; V
DS =10V
BFR30 5V
BFR31 2.5 V
yfscommon-source transfer admittance ID=1mA; V
DS =10V; f=1kHz;
Tamb =25C
BFR30 1 4 mS
BFR31 1.5 4.5 mS
yfscommon-source transfer admittance ID=200A; VDS =10V; f=1kHz;
Tamb =25C
BFR30 0.5 mS
BFR31 0.75 mS
yoscommon source output admittance ID=1mA; V
DS =10V; f=1kHz
BFR30 40 S
BFR31 25 S
yoscommon source output admittance ID=200A; VDS =10V; f=1kHz
BFR30 20 S
BFR31 15 S
Cis input capacitance VDS =10V; f=1MHz
ID=1mA 4pF
ID=0.2nA 4pF
Crs feedback capacitance VDS =10V; f=1MHz; T
amb =25C
ID=1mA 1.5 pF
ID=200A1.5 pF
Vnequivalent input noise voltage ID=200A; VDS =10V;
B=0.6to100Hz
0.5 V
1997 Dec 05 5
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.3 Input characteristics.
BFR30.
VDS =10V; T
j=25C.
handbook, halfpage
4
10
8
2
6
4
0
320
max
typ
min
VGS (V)
ID
(mA)
1
MDA657
Fig.4 Output characteristics; typical values.
BFR30.
Tj=25C.
handbook, halfpage
010
10
0
2
4
6
8
2468
MDA658
VDS (V)
ID
(mA)
VGS = 0 V
0.5
1.0
1.5
2.0
Fig.5 Input characteristics.
BFR31.
VDS =10V; T
j=25C.
handbook, halfpage
50
5
0
1
2
3
4
4321
MDA659
max
typ
min
VGS (V)
ID
(mA)
Fig.6 Output characteristics; typical values.
BFR31.
Tj=25C.
handbook, halfpage
010
5
0
1
2
3
4
2468
MDA660
VDS (V)
ID
(mA)
VGS = 0 V
0.2
0.4
0.6
0.8
1
1.2
1997 Dec 05 6
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.7 Drain current as a function of junction
temperature; typical values.
BFR30.
VDS =10V.
handbook, halfpage
25 50 75 125
ID
(mA)
6
4
2
0100
MDA661
Tj (°C)
VGS = 0 V
0.5
1.0
1.5
2.0
Fig.8 Drain current as a function of junction
temperature; typical values.
BFR31.
VDS =10V.
handbook, halfpage
1
1.2
25 50 75 125
ID
(mA)
6
4
2
0100
MDA662
Tj (°C)
0.2
0.4
0.6
0.8
VGS =
0 V
Fig.9 Gate cut-off current as a function of junction
temperature; typical values.
VGS =10 V; VDS =0.
handbook, halfpage
20010050
IGSS
(nA)
0 150 Tj (°C)
10
1
101
102
103
MDA656
Fig.10 Gate-source cut-off voltage as a function of
drain current; typical values.
ID= 0.5 nA; VDS =10V; V
GS =0; T
j=25C.
handbook, halfpage
010
6
0
2
4
2IDSS (mA)
VGS(off)
(V)
468
MDA663
BFR31
BFR30
\\ EFRSO
1997 Dec 05 7
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.11 Common source transfer admittance as a
function of drain current; typical values.
VDS =10V; f=1kHz; T
amb =25C.
handbook, halfpage
0
7.5
5
2.5
02ID (mA)
46
MDA664
yfs
(mA/V)
BFR30
BFR31
Fig.12 Common source output admittance as a
function of drain current; typical values.
VDS =10V; f=1kHz; T
amb =25C.
handbook, halfpage
0
75
50
25
02ID (mA)
46
BFR30
BFR31
MDA665
yos
(μA/V)
Fig.13 Common source output admittance as a
function of drain-source voltage;
typical values.
f=1kHz; T
amb =25C.
(1) ID=4mA. (2) ID=1mA.
handbook, halfpage
30
(2) BFR30
BFR31
01020
VDS (V)
104
103
102
10
MDA666
|yos|
(μA/V)
(1)
Fig.14 Input capacitance as a function of
gate-source voltage; typical values.
VDS =10V; f=1MHz; T
amb =25C.
handbook, halfpage
05
5
0
1
2
3
4
123
Cis
(pF)
VGS (V)
4
MDA667
1997 Dec 05 8
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.15 Feedback capacitance as a function of
gate-source voltage; typical values.
VDS =10V; f=1MHz; T
amb =25C.
handbook, halfpage
05
1
0
0.2
0.4
0.6
0.8
123
Crs
(pF)
VGS (V)
4
MDA668
Fig.16 Equivalent noise voltage source as a function of frequency; typical values.
VDS =10V; T
amb =25C.
(1) BFR31; ID=1mA.
(2) BFR30; ID=4mA.
handbook, full pagewidth
10
4
10
3
10
2
10
1
10 10
2
10
3
10
4
f (Hz)
10
5
10
6
MDA669
(1)
(2)
e
n
(nV/ Hz)
1997 Dec 05 9
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.17 Equivalent noise current source as a function of frequency; typical values.
handbook, full pagewidth
10
4
10
3
10
2
10
1
10 10
2
10
3
10
4
f (Hz)
10
5
10
6
MDA670
i
n
(fA/ Hz)
(1)
(2)
VDS =10V; T
amb =25C.
(1) BFR31; ID=1mA.
(2) BFR30; ID=4mA.
Law J ‘ ‘ @7544 E@ W
1997 Dec 05 10
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
1997 Dec 05 11
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
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charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
1997 Dec 05 12
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
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Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
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Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
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product for such automotive applications, use and
specifications, and (b) whenever customer uses the
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Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
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© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/02/pp13 Date of release: 1997 Dec 05

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