2PB710A Datasheet by NXP USA Inc.

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DATA SHEET
Product data sheet
Supersedes data of 1999 Apr 23
1999 May 31
DISCRETE SEMICONDUCTORS
2PB710A
PNP general purpose transistor
db
ook, halfpage
M3D114
1999 May 31 2
NXP Semiconductors Product data sheet
PNP general purpose transistor 2PB710A
FEATURES
High current (max. 500 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in an SC-59 plastic package.
NPN complement: 2PD602A.
MARKING
PINNING
TYPE NUMBER MARKING CODE
2PB710AQ DQ
2PB710AR DR
2PB710AS DS
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SC-59) and symbol.
handbook, halfpage
12
1
3
2
3
MAM322
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − −60 V
VCEO collector-emitter voltage open base − −50 V
VEBO emitter-base voltage open collector − −5 V
ICcollector current (DC) − −500 mA
ICM peak collector current − −1 A
IBM peak base current − −200 mA
Ptot total power dissipation Tamb 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 May 31 3
NXP Semiconductors Product data sheet
PNP general purpose transistor 2PB710A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 60 V − −10 nA
IE = 0; VCB = 60 V; Tj = 150 °C− −5μA
IEBO emitter cut-off current IC = 0; VEB = 5 V − −10 nA
hFE DC current gain IC = 150 mA; VCE = 10 V; note 1
2PB710AQ 85 170
2PB710AR 120 240
2PB710AS 170 340
DC current gain IC = 500 mA; VCE = 10 V; note 1 40
VCEsat collector-emitter saturation voltage IC = 300 mA; IB = 30 mA; note 1 − −600 mV
VBEsat base-emitter saturation voltage IC = 300 mA; IB = 30 mA; note 1 − −1.5 V
Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 15 pF
fTtransition frequency IC = 50 mA; VCE = 10 V;
f = 100 MHz; note 1
2PB710AQ 100 MHz
2PB710AR 120 MHz
2PB710AS 140 MHz
2mm scale DIMENSIONS (mm are lhe original dimensions) UNIT A A‘ by c D E e e, HE 13 01 can 026 31 17 30 as 033 "‘m In oma 035 010 27 13 ‘9 “95 25 02 023 “2 02 REFERENCES OUTLINE EUROPEAN VEHS'O" IEC JEDEC EIAJ PROJECTION 'SSUE DATE SOT346 T0236 $059 a @ 98707717 1999 May 31
1999 May 31 4
NXP Semiconductors Product data sheet
PNP general purpose transistor 2PB710A
PACKAGE OUTLINE
UNIT A
1
b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.50
0.35 0.26
0.10 3.1
2.7 1.7
1.3 0.95
e
1.9 3.0
2.5 0.33
0.23 0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346 TO-236 SC-59
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0 1 2 mm
scale
A
1.3
1.0 0.1
0.013
c
X
12
3
Plastic surface mounted package; 3 leads SOT34
6
98-07-17
1999 May 31 5
NXP Semiconductors Product data sheet
PNP general purpose transistor 2PB710A
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
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implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 115002/06/pp6 Date of release: 1999 May 31 Document order number: 9397 750 05863

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