2N5064 Datasheet by NXP USA Inc.

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e gate SYMBOL PARAME MAX. UNIT nvelope, purpose VDRMY Repetitive 200 V controi VRRM ntended In“) Average 0 0.5 A tly to "PM, RMS ones 0.8 A egreated |ISM Nonrrepe 10 A wer gate PIN DESC ION ~ ._\_ 1 anode N k 2 gate ,/' 3 cathode SYMBOL PARAMET C M N. M U T Vow: VRRM Repetitive peak ofirstate 200 V voitages In“, Average onrstate current haif sine wave Tc 5 67 'C 0.51 A TE S 102 ‘C 0.255 A Imam) RMS onrstate current all conduction angies 0.8 A mm Repetitive peak onrstate 8 A current |TSM Nonrrepetitive peak haif sine wave; T3 : 2 rior to surge; 10 A onrstate current t , 8.3 ms Izt Izt [or [using 0.4 Azs IGM Peak gate current 20 Hz 1 A VGM Peak gate voltage 5 V VRGM Peak reverse gate voitage 5 V GM Peak gate power 0.1 W PGUM Average gate power period . 0.01 W Tslg Storage temperature 765 150 'C T‘ Operating junction 765 125 '0 temperature
Philips Semiconductors Product specification
Thyristor 2N5064
sensitive gate
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated sensitive gate SYMBOL PARAMETER MAX. UNIT
thyristor in a plastic envelope,
intended for use in general purpose VDRM, Repetitive peak off-state voltages 200 V
switching and phase control VRRM
applications. This device is intended IT(AV) Average on-state current 0.5 A
to be interfaced directly to IT(RMS) RMS on-state current 0.8 A
microcontrollers, logic integreated ITSM Non-repetitive peak on-state current 10 A
circuits and other low power gate
trigger circuits.
PINNING - TO92 variant PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 anode
2 gate
3 cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDRM, VRRM Repetitive peak off-state - 200 V
voltages
IT(AV) Average on-state current half sine wave
Tc 67 ˚C - 0.51 A
Tc 102 ˚C - 0.255 A
IT(RMS) RMS on-state current all conduction angles - 0.8 A
ITRM Repetitive peak on-state - 8 A
current
ITSM Non-repetitive peak half sine wave; Ta = 25 ˚C prior to surge; - 10 A
on-state current t = 8.3 ms
I2tI
2
t for fusing t = 8.3 ms - 0.4 A2s
IGM Peak gate current Ta = 25˚C, tp = 300µs; f = 120 Hz - 1 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power Ta = 25˚C - 0.1 W
PG(AV) Average gate power Ta = 25˚C, over any 16 ms period - 0.01 W
Tstg Storage temperature -65 150 ˚C
TjOperating junction -65 125 ˚C
temperature
ak
g
321
October 1997 1 Rev 1.200
SYMBOL P C M T M . U T Rim Therm see n 7 75 KM iuncti thm Therm 7 200 KM iuncti SYMBOL PARAM C M T P. M . U T IGT Gate trigger current 7 200 uA 7 350 uA £2; gate open circuit |L Latching current V : 12 V; RGK7 _ 7 6 mA |H Holding current D 7 5 mA VT On7state voltage I7 p us; 5 S 0.01 7 1.7 V VGT Gate trigger voltage 7 0.8 V 7 1 .2 V 0.1 7 V WWW): Rt 0: gate open circuit ID, |R Of17state leakage current VD7 _ VDRMWH; VR W“, 5 'C 7 10 uA 7 50 uA SYMBOL P C M T P. M U T dVD/dt Critical r of VW = 67 7 25 V/us citstate expunen Q tEl Gate cc rn7on I,M : 2 A mA; 7 2 us time die/dt : tq Circuit c d VDM = 67 7 100 us tum7cftt I,M 1.6 0 A/us dVD/dt :
Philips Semiconductors Product specification
Thyristor 2N5064
sensitive gate
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-c Thermal resistance see note:1- - 75 K/W
junction to case
Rth j-a Thermal resistance - 200 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tc = 25 ˚C, RGK = 1 k unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current Tc = 25 ˚C - - 200 µA
Tc = -65 ˚C - - 350 µA
VD = VDRM(max); RL = 100 ; gate open
circuit
ILLatching current VD = 12 V; RGK = 1 k--6mA
I
HHolding current VD = 12 V; RGK = 1 k--5mA
V
TOn-state voltage IT = 1.2 A peak; tp = 300 µs; δ 0.01 - - 1.7 V
VGT Gate trigger voltage Tj = 25 ˚C - - 0.8 V
Tj = -65 ˚C - - 1.2 V
Tj = 125 ˚C 0.1 - - V
VD = VDRM(max); RL = 100 ; gate open
circuit
ID, IROff-state leakage current VD = VDRM(max); VR = VRRM(max)
Tj = 25 ˚C - - 10 µA
Tj = 125 ˚C - - 50 µA
DYNAMIC CHARACTERISTICS
Tc = 25 ˚C, RGK = 1 k unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 25 - V/µs
off-state voltage exponential waveform; RGK = 1 k
tgt Gate controlled turn-on ITM = 2 A; VD = VDRM(max); IG = 10 mA; - 2 - µs
time dIG/dt = 0.1 A/µs
tqCircuit commutated VDM = 67% VDRM(max); Tj = 125 ˚C; - 100 - µs
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 k
1 This measurement is made with the case mounted "flat side down" on a heatsink and held in position by means of
a metal clamp over the curved surface.
October 1997 2 Rev 1.200
Dimensions in mm Net Mass: 0.2 g 48 44 Fig. 1. T092; plastic envelope. 9.4L)> ‘, min
Philips Semiconductors Product specification
Thyristor 2N5064
sensitive gate
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.2 g
Fig.1. TO92; plastic envelope.
Notes
1. Epoxy meets UL94 V0 at 1/8".
0.48
0.40 0.40
min
12.7 min
5.2 max
4.8 max 4.2 max
2.5 max
1.6
2.54
0.66
0.56
123
October 1997 3 Rev 1.200
Data sheet status _. Objective specification _. Preiiminary specification Product specilication T Li iting values Limiting values are given in or more of the iimiting valu operation ol the device at t this specification is not imp Application information Where application inlormat © Philips Electronics N.V All rights are reserved. Re copyright owner. The information presented accurate and reliabie and m consequence of its use. P industrial or inteiIectuaI pro
Philips Semiconductors Product specification
Thyristor 2N5064
sensitive gate
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997 4 Rev 1.200

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