1PS181 Datasheet by NXP USA Inc.

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DATA SHEET
Product data sheet
Supersedes data of April 1996
1996 Sep 03
DISCRETE SEMICONDUCTORS
1PS181
High-speed double diode
db
ook, halfpage
M3D114
1996 Sep 03 2
NXP Semiconductors Product data sheet
High-speed double diode 1PS181
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 80 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS181 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small plastic SMD SC59 package.
PINNING
PIN DESCRIPTION
1cathode (k1)
2cathode (k2)
3common anode
Fig.1 Simplified outline (SC59) and symbol.
Marking code: A3T.
Top view
21
3
MAM082
21
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage 85 V
VRcontinuous reverse voltage 80 V
IFcontinuous forward current single diode loaded; see Fig.2;
note 1
215 mA
double diode loaded; see Fig.2;
note 1
125 mA
IFRM repetitive peak forward current 500 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge
t = 1 μs4 A
t = 1 s 0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
1996 Sep 03 3
NXP Semiconductors Product data sheet
High-speed double diode 1PS181
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF = 1 mA 610 mV
IF = 10 mA 740 mV
IF = 50 mA 1.0 V
IF = 100 mA 1.2 V
IRreverse current see Fig.4
VR = 25 V 30 nA
VR = 80 V 0.5 μA
VR = 25 V; Tj = 150 °C30 μA
VR = 80 V; Tj = 150 °C100 μA
Cddiode capacitance f = 1 MHz; VR = 0; see Fig.5 2.0 pF
trr reverse recovery time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.6
4ns
Vfr forward recovery voltage when switched from IF = 10 mA;
tr = 20 ns; see Fig.7
1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 250 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
200 smgie diode issued doubie made inaded ma 100 200 Tamb 1°C) Device moumed on an FR4 printeflrcwcuit board Fig.2 Maximum permissible continuous forward current as a iunction of ambient temperature. 200 mu socc typicaivaiues (2) T 2570 |ypicaivaiues (3i T.=25 .0 maximum values Fig.3 Forward current as torward voltage. o 100 Fig.4 Reverse current as a junction temperature 1996 Sep 03
1996 Sep 03 4
NXP Semiconductors Product data sheet
High-speed double diode 1PS181
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
0 200
300
0
100
200
MBD033
100
IF
(mA)
T ( C)
amb o
single diode loaded
double diode loaded
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1VF (V)
(1) (3)(2)
Fig.4 Reverse current as a function of
junction temperature.
handbook, halfpage
10
2
10
200
0
MBG380
100 Tj (
o
C)
IR
(μA)
1
10
2
10
1
(1) (2) (3)
(1) VR = 80 V; maximum values.
(2) VR = 80 V; typical values.
(3) VR = 25 V; typical values.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
025
VR (V)
2.5
0
0.5
MBH191
1.0
1.5
2.0
5
Cd
(pF)
10 15 20
1996 Sep 03 5
NXP Semiconductors Product data sheet
High-speed double diode 1PS181
Fig.6 Reverse recovery voltage test circuit and waveforms.
(1) IR = 1 mA.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩ
IF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Forward recovery voltage test circuit and waveforms.
tr
t
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
1996 Sep 03 6
NXP Semiconductors Product data sheet
High-speed double diode 1PS181
PACKAGE OUTLINE
Fig.8 SC59.
Dimensions in mm.
msa31
3
1.3
1.0
0.100
0.013
0.26
0.10
0.6
0.2
1.7
1.3
A
2.1
1.7
3.1
2.7
3.0
2.5
AM
0.2 0.50
0.35
3
2
1
1.65
1.25
1996 Sep 03 7
NXP Semiconductors Product data sheet
High-speed double diode 1PS181
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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of an NXP Semiconductors product can reasonably be
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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pertaining to warranty, intellectual property rights
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described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 1996 Sep 03

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