MIC2288 Datasheet by Microchip Technology

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2018 Microchip Technology Inc. DS20006034B-page 1
MIC2288
Features
2.5V to 10V Input Voltage Range
Output Voltage Adjustable to 34V
Over 1A Switch Current
1.2 MHz PWM Operation
Stable with Ceramic Capacitors
<1% Line and Load Regulation
Low Output Voltage Ripple
<1 µA Shutdown Current
Undervoltage Lockout
Output Overvoltage Protection (MIC2288YML)
Overtemperature Shutdown
Thin SOT23-5 Package Option
2 mm x 2 mm leadless DFN-8 Package Option
–40°C to +125°C Junction Temperature Range
Applications
Organic EL Power Supply
TFT-LCD Bias Supply
12V Supply for DSL Applications
Multi-Output DC/DC Converters
Positive and Negative Output Regulators
SEPIC Converters
General Description
The MIC2288 is a 1.2 MHz PWM, DC/DC boost
switching regulator available in low-profile Thin SOT23
and 2 mm x 2 mm DFN package options. High power
density is achieved with the MIC2288’s internal 34V/1A
switch, allowing it to power large loads in a tiny
footprint.
The MIC2288 implements a constant frequency,
1.2 MHz PWM, current mode control scheme with
internal compensation that offers excellent transient
response and output regulation performance. The high
frequency operation saves board space by allowing
small, low-profile, external components. The fixed
frequency PWM topology also reduces spurious
switching noise and ripple to the input power source.
The MIC2288 is available in a low-profile Thin SOT23-5
package and a 2 mm x 2 mm DFN-8 leadless package.
The DFN package option has an output overvoltage
protection feature.
The MIC2288 has a junction temperature range of
–40°C to +125°C.
Package Types
MIC2288
DFN-8 (ML)
(Top View)
MIC2288
Thin SOT23-5 (D5)
(Top View)
OVP
VIN
EN
AGND
PGND
SW
FB
NC
1
2
3
4
8
7
6
5
EP
FB GND
EN VIN
SW
31
5
2
4
1A, 1.2 MHz PWM Boost Converter in Thin SOT23 and DFN Packages
MIC2288
DS20006034B-page 2 2018 Microchip Technology Inc.
Typical Application Circuit
Functional Block Diagram
2
L1
10μH
R2
R1
3
1
4
5
MIC2288YD5
VIN
1-Cell
Li Ion
VOUT
15V
EN
SW
FB
GND
VIN
C1
2.2μF
C2
10μF
GND
CA
PWM
Generator
Ramp
Generator
1.2MHz
Oscillator
SW
ENFB OVP*VIN
1.24V
*OVP available on DFN package option only.
gm
OVP*
Σ
VREF
2018 Microchip Technology Inc. DS20006034B-page 3
MIC2288
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage (VIN) .................................................................................................................................................+12V
Switch Voltage (VSW) ................................................................................................................................. –0.3V to +34V
Enable Pin Voltage (VEN)...............................................................................................................................–0.3V to VIN
FB Voltage (VFB) ......................................................................................................................................................+6.0V
Switch Current (ISW) .....................................................................................................................................................2A
ESD Rating (Note 1) ................................................................................................................................................ +2 kV
Operating Ratings ††
Supply Voltage (VIN) .................................................................................................................................. +2.5V to +10V
Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† Notice: The device is not guaranteed to function outside its operating ratings.
Note 1: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 k in series
with 100 pF.
MIC2288
DS20006034B-page 4 2018 Microchip Technology Inc.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics: TA = +25°C, VIN = VEN = 3.6V, VOUT = 10V, IOUT = 20 mA, unless otherwise noted. Bold
values indicate –40°C TJ ±125°C. Note 1
Parameter Sym. Min. Typ. Max. Units Conditions
Supply Voltage Range VIN 2.5 10 V—
Undervoltage Lockout VUVLO 1.8 2.1 2.4 V
Quiescent Current IVIN —2.8 5 mAV
FB = 2V, not switching
Shutdown Current ISD —0.1 1 µAV
EN = 0V, Note 2
Feedback Voltage VFB
1.2271.241.252 V±1%
1.215 1.265 ±2%, overtemperature
Feedback Input Current IFB —–450— nAV
FB = 1.24V
Line Regulation 0.1 1 % 3V VIN 5V
Load Regulation 0.2 % 5 mA IOUT 40 mA
Maximum Duty Cycle DMAX 85 90 % —
Switch Current Limit ISW —1.2— A
Switch Saturation Voltage VSW 550 mV ISW = 1A
Switch Leakage Current ISW —0.01 5µA VEN = 0V, VSW = 10V
Enable Threshold VEN
1.5 —— VTurn on
——0.4 Turn off
Enable Pin Current IEN —2040µAV
EN = 10V
Oscillator Frequency fSW 1.05 1.2 1.35 MHz
Output Overvoltage
Protection VOVP 30 32 34 V DFN package option only
Overtemperature
Threshold Shutdown TJ
— 150 — °C
— 10 — Hysteresis
Note 1: Specification for packaged product only.
2: ISD = IVIN.
2018 Microchip Technology Inc. DS20006034B-page 5
MIC2288
TEMPERATURE SPECIFICATIONS
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Junction Operating Temperature TJ–40 +125 °C —
Storage Temperature Range TS–65 +150 °C —
Package Thermal Resistances
Thermal Resistance, 2x2 DFN 8-Ld JA —93 —°C/W
Thermal Resistance, TSOT23-5 JA —256 —°C/W
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
MIC2288
DS20006034B-page 6 2018 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
FIGURE 2-1: Efficiency at VOUT = 12V.
FIGURE 2-2: Load Regulation.
FIGURE 2-3: Feedback Voltage vs.
Temperature.
FIGURE 2-4: Current-Limit vs. Supply
Voltage.
FIGURE 2-5: Current-Limit vs.
Temperature.
FIGURE 2-6: Switch Saturation vs. Supply
Voltage.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
75
77
79
81
83
85
87
89
91
0 25 50 75 100 125 150
EFFICIENCY (%)
OUTPUT CURRENT (mA)
VIN = 4.2V
VIN = 3.6V
VIN = 3.3V
1.10
1.12
1.14
1.16
1.18
1.20
1.22
1.24
1.26
1.28
1.30
-40 -20 0 20 40 60 80 100 120
FEEDBACK VOLTAGE (V)
TEMPERATURE (°C)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2.5 4 5.5 7 8.5 10
CURRENT LIMIT (A)
SUPPLY VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-40 -20 0 20 40 60 80 100 120
CURRENT LIMIT (A)
TEMPERATURE (°C)
0
50
100
150
200
250
300
2.5 4 5.5 7 8.5 10
SWITCH SATURATION VOLTAGE (mV)
SUPPLY VOLTAGE (V)
ISW = 500mA
2018 Microchip Technology Inc. DS20006034B-page 7
MIC2288
FIGURE 2-7: Switch Saturation vs. Switch
Current.
FIGURE 2-8: Switch Saturation vs.
Temperature.
FIGURE 2-9: Frequency vs. Temperature.
.
FIGURE 2-10: Maximum Duty Cycle vs.
Supply Voltage.
FIGURE 2-11: Maximum Duty Cycle vs.
Temperature.
FIGURE 2-12: FB Pin Current vs.
Temperature.
0
100
200
300
400
500
600
700
0 200 400 600 800 1000
SWITCH SATURATION VOLTAGE (mV)
SWITCH CURRENT (mA)
VIN = 3.6V
0
100
200
300
400
500
600
700
-40 -20 0 20 40 60 80 100 120
SWITCH SATURATION VOLTAGE (mV)
TEMPERATURE (°C)
VIN = 3.6V
ISW = 500mA
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-40 -20 0 20 40 60 80 100 120
FREQUENCY (MHz)
TEMPERATURE (°C)
80
82
84
86
88
90
92
94
96
98
100
2.5 4 5.5 7 8.5 10
MAXIMUM DUTY CYCLE (%)
SUPPLY VOLTAGE (V)
85
87
89
91
93
95
97
99
-40 -20 0 20 40 60 80 100 120
MAXIMUM DUTY CYCLE (%)
TEMPERATURE (°C)
VIN = 3.6V
0
100
200
300
400
500
600
700
-40 -20 0 20 40 60 80 100 120
FEEDBACK CURRENT (nA)
TEMPERATURE (°C)
MIC2288
DS20006034B-page 8 2018 Microchip Technology Inc.
FIGURE 2-13: Enable Characteristics.
FIGURE 2-14: Line Transient Response.
FIGURE 2-15: Load Transient Response.
FIGURE 2-16: Output Voltage Ripple and
Switching Waveforms.
Time (400μs/div)
OUTPUT VOLTAGE
(5V/div)
ENABLE VOLTAGE
(2V/div)
3.6VIN
12VOUT
150mA Load
Output Voltage
Enable Voltage
Time (400μs/div)
OUTPUT VOLTAGE
(1mV/div) AC-Coupled
INPUT VOLTAGE
(2V/div)
4.2V
3.2V
12VOUT
150mA Load
Time (400μs/div)
OUTPUT VOLTAGE
(100mV/div) AC-Coupled
LOAD CURRENT
(100mA/div)
10mA
150mA
3.6VIN
12VOUT
COUT = 10F
Time (400ns/div)
OUTPUT VOLTAGE
(50mV/div)
INDUCTOR CURRENT
(500mA/div)
SWITCH SATURATION
(5V/div)
VSW
Output Voltage
3.6VIN
12VOUT
150mA
Inductor Current
(10μH)
2018 Microchip Technology Inc. DS20006034B-page 9
MIC2288
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
Pin Number
TSOT23-5 Pin Number
DFN-8 Pin Name Description
1 7 SW Switch Node (Input): Internal power bipolar collector.
2 GND Ground (Return): Ground.
3 6 FB Feedback (Input): 1.24V output voltage sense node.
43EN
Enable (input): Logic-high enables regulator. Logic-low shuts down reg-
ulator. Do not leave floating.
5 2 VIN Supply (Input): 2.5V to 10V input voltage.
—1OVP
Output Overvoltage Protection (Input): Tie this pin to VOUT to clamp the
output voltage to 34V maximum in fault conditions. Tie this pin to ground
if OVP function is not required.
5 NC No Connect: No internal connection to die.
4 AGND Analog ground.
8 PGND Power ground.
EP GND Exposed backside pad.
MIC2288
DS20006034B-page 10 2018 Microchip Technology Inc.
4.0 FUNCTIONAL DESCRIPTION
The MIC2288 is a constant frequency, PWM current
mode boost regulator. See the Functional Block
Diagram. The MIC2288 is composed of an oscillator,
slope compensation ramp generator, current amplifier,
gm error amplifier, PWM generator, and a 1A bipolar
output transistor. The oscillator generates a 1.2 MHz
clock. The clock’s two functions are to trigger the PWM
generator that turns on the output transistor and to
reset the slope compensation ramp generator. The
current amplifier is used to measure the switch current
by amplifying the voltage signal from the internal sense
resistor. The output of the current amplifier is summed
with the output of the slope compensation ramp
generator. This summed current-loop signal is fed to
one of the inputs of the PWM generator.
The gm error amplifier measures the feedback voltage
through the external feedback resistors and amplifies
the error between the detected signal and the 1.24V
reference voltage. The output of the gm error amplifier
provides the voltage-loop signal that is fed to the other
input of the PWM generator. When the current-loop
signal exceeds the voltage-loop signal, the PWM
generator turns off the bipolar output transistor. The
next clock period initiates the next switching cycle,
maintaining the constant frequency current-mode
PWM control.
M‘C2288VML
2018 Microchip Technology Inc. DS20006034B-page 11
MIC2288
5.0 APPLICATION INFORMATION
5.1 DC/DC PWM Boost Conversion
The MIC2288 is a constant-frequency boost converter.
It operates by taking a DC input voltage and regulating
a higher DC output voltage. Figure 5-1 shows a typical
circuit. Boost regulation is achieved by turning on an
internal switch, which draws current through the
inductor (L1). When the switch turns off, the inductor’s
magnetic field collapses, causing the current to be
discharged into the output capacitor through an
external Schottky diode (D1). Voltage regulation is
achieved by modulating the pulse width or pulse-width
modulation (PWM).
FIGURE 5-1: Typical Application Circuit.
5.2 Duty Cycle Considerations
Duty cycle refers to the switch on-to-off time ratio and
can be calculated as follows for a boost regulator:
EQUATION 5-1:
The duty cycle required for voltage conversion should
be less than the maximum duty cycle of 85%. Also, in
light load conditions where the input voltage is close to
the output voltage, the minimum duty cycle can cause
pulse skipping. This is due to the energy stored in the
inductor causing the output to overshoot slightly over
the regulated output voltage. During the next cycle, the
error amplifier detects the output as being high and
skips the following pulse. This effect can be reduced by
increasing the minimum load or by increasing the
inductor value. Increasing the inductor value reduces
peak current, which in turn reduces energy transfer in
each cycle.
5.3 Overvoltage Protection
For the DFN package option, there is an overvoltage
protection function. If the feedback resistors are
disconnected from the circuit or the feedback pin is
shorted to ground, the feedback pin will fall to ground
potential. This will cause the MIC2288 to switch at full
duty cycle in an attempt to maintain the feedback
voltage. As a result, the output voltage will climb out of
control. This may cause the switch node voltage to
exceed its maximum voltage rating, possibly damaging
the IC and the external components. To ensure the
highest level of protection, the MIC2288 OVP pin will
shut the switch off when an overvoltage condition is
detected, saving the regulator and other sensitive
circuitry downstream.
5.4 Component Selection
5.4.1 INDUCTOR
Inductor selection is a balance between efficiency,
stability, cost, size, and rated current. For most
applications, 10 H is the recommended inductor
value. It is usually a good balance between these
considerations.
Larger inductance values reduce the peak-to-peak
ripple current, affecting efficiency. This has the effect of
reducing both the DC losses and the transition losses.
There is also a secondary effect of an inductors DC
resistance (DCR). The DCR of an inductor will be
higher for more inductance in the same package size.
This is due to the longer windings required for an
increase in inductance. Because the majority of input
current (minus the MIC2288 operating current) is
passed through the inductor, higher DCR inductors will
reduce efficiency.
To maintain stability, increasing the inductor value will
have to be associated with an increase in output
capacitance. This is due to the unavoidable “right half
plane zero” effect for the continuous current boost
converter topology. The frequency at which the right
half plane zero occurs can be calculated as follows:
EQUATION 5-2:
The right half plane zero has the undesirable effect of
increasing gain, while decreasing phase. This requires
that the loop gain is rolled off before this has significant
effect on the total loop response. This can be
accomplished by either reducing inductance
(increasing RHPZ frequency) or increasing the output
capacitor value (decreasing loop gain).
L1
10μH
C2
10μF
R2
R1
MIC2288YML
VIN
VIN VOUT
EN
SW
FB
GND
GND
OVP
GND
C1
2.2μF
D1
D1VIN
VOUT
-------------
=
fRHPZ
VIN2
VOUT LIOUT
2
-------------------------------------------------------
=
MIC2288
DS20006034B-page 12 2018 Microchip Technology Inc.
5.4.2 OUTPUT CAPACITOR
Output capacitor selection is also a trade-off between
performance, size, and cost. Increasing output
capacitance will lead to an improved transient
response, but also an increase in size and cost. X5R or
X7R dielectric ceramic capacitors are recommended
for designs with the MIC2288. Y5V values may be used
but to compensate their drift over temperature, more
capacitance is required. The following table shows the
recommended ceramic (X5R) output capacitor value
vs. output voltage.
5.4.3 DIODE SELECTION
The MIC2288 requires an external diode for operation.
A Schottky diode is recommended for most
applications due to their lower forward voltage drop and
reverse recovery time. Ensure the diode selected can
deliver the peak inductor current and the maximum
reverse voltage is rated greater than the output voltage.
5.4.4 INPUT CAPACITOR
A minimum 1F ceramic capacitor is recommended for
designing with the MIC2288. Increasing input
capacitance will improve performance and greater
noise immunity on the source. The input capacitor
should be as close as possible to the inductor and the
MIC2288, with short traces for good noise
performance.
5.4.5 FEEDBACK RESISTORS
The MIC2288 utilizes a feedback pin to compare the
output to an internal reference. The output voltage is
adjusted by selecting the appropriate feedback resistor
network values. The R2 resistor value must be less
than or equal to 5 k (R2 5k).The desired output
voltage can be calculated as follows:
EQUATION 5-3:
TABLE 5-1: OUTPUT CAPACITOR
SELECTION
Output Voltage Recommended Output
Capacitance
<6V 22 µF
<16V 10 µF
<34V 4.7 µF
VOUT VREF R1
R2
-------1+


=
Where:
VREF = 1.24V
MICZZSBYML D‘ MICZZSBYML m MICZZSBYML D‘ MICZZSBYML D‘
2018 Microchip Technology Inc. DS20006034B-page 13
MIC2288
6.0 APPLICATION CIRCUITS
FIGURE 6-1: 3.0V to 4.2V VIN to 5VOUT
@ 400 mA.
FIGURE 6-2: 3.0V to 4.2V VIN to 9VOUT
@ 180 mA.
FIGURE 6-3: 3.0V to 4.2V VIN to 12VOUT
@ 100 mA.
FIGURE 6-4: 3.0V to 4.2V VIN to 15VOUT
@ 100 mA.
Ref Description Part Number Vendor
C1 4.7 µF, 6.3V, 0805
X5R Cer Cap 08056D475MAT AVX
C2 22 µF, 6.3V, 0805
X5R Cer Cap 12066D226MAT AVX
D1 1A, 40V Schotty
Diode MBRM140T3 On Semi.
L1 4.7 µH, 650 mA
Inductor LQH32CN4R7M11 Murata
Ref Description Part Number Vendor
C1 2.2 µF, 10V, 0805
X5R Cer Cap 08052D225KAT AVX
C2 10 µF, 16V, 1206
X5R Cer Cap 1206YD106MAT AVX
D1 1A, 40V Schotty
Diode MBRM140T3 On Semi.
L1 10 µH, 650 mA
Inductor LQH43CN100K03 Murata
L1
4.7μH
C2
22μF
6.3V
R2
1.87
R1
5.62kΩ
MIC2288YML
VIN
V
IN
3V to 4.2V
V
OUT
5V @ 400mA
EN
SW
FB
GND
GND
OVP
GND
C1
4.7μF
6.3V
D1
L1
10μH
C2
10μF
16V
R2
5kΩ
R1
31.6
MIC2288YML
VIN
V
IN
3V to 4.2V
V
OUT
9V @ 180mA
EN
SW
FB
GND
GND
OVP
GND
C1
2.2μF
10V
D1
Ref Description Part Number Vendor
C1 4.7 µF, 6.3V, 0805
X5R Cer Cap 08056D475MAT AVX
C2 10 µF, 16V, 1206
X5R Cer Cap 1206YD106MAT AVX
D1 1A, 40V Schotty
Diode MBRM140T3 On Semi.
L1 4.H, 650mA
Inductor LQH32CN4R7M11 Murata
Ref Description Part Number Vendor
C1 2.2 µF, 10V, 0805
X5R Cer Cap 08052D225KAT AVX
C2 10 µF, 16V, 1206
X5R Cer Cap 1206YD106MAT AVX
D1 1A, 40V Schotty
Diode MBRM140T3 On Semi.
L1 10 µH, 650 mA
Inductor LQH43CN100K03 Murata
L1
10μH
C2
10μF
16V
R2
5kΩ
R1
42.3kΩ
MIC2288YML
VIN
V
IN
3V to 4.2V
V
OUT
12V @ 100mA
EN
SW
FB
GND
GND
OVP
GND
C1
2.2μF
10V
D1
L1
10μH
C2
10μF
16V
R2
5kΩ
R1
54.9kΩ
MIC2288YML
VIN
V
IN
3V to 4.2V
V
OUT
15V @ 100mA
EN
SW
FB
GND
GND
OVP
GND
C1
2.2μF
10V
D1
MICZZSBYML D‘ M‘CZZEEYML DI mczzsavML M‘CZZEEYML DI
MIC2288
DS20006034B-page 14 2018 Microchip Technology Inc.
FIGURE 6-5: 3.0V to 4.2V VIN to 24VOUT
@ 50 mA.
FIGURE 6-6: 5VIN to 9VOUT @ 330 mA.
FIGURE 6-7: 5VIN to 12VOUT @ 250 mA.
FIGURE 6-8: 5VIN to 24VOUT @ 80 mA.
Ref Description Part Number Vendor
C1 2.2 µF, 10V, 0805
X5R Cer Cap 08052D225KAT AVX
C2 4.7 µF, 25V, 1206
X5R Cer Cap 12063D475MAT AVX
D1 1A, 40V Schotty
Diode MBRM140T3 On Semi.
L1 10 µH, 650 mA
Inductor LQH43CN100K03 Murata
Ref Description Part Number Vendor
C1 2.2 µF, 10V, 0805
X5R Cer Cap 08052D225KAT AVX
C2 10 µF, 16V, 1206
X5R Cer Cap 1206YD106MAT AVX
D1 1A, 40V Schotty
Diode MBRM140T3 On Semi.
L1 10 µH, 650 mA
Inductor LQH43CN100K03 Murata
L1
10μH
C2
4.7μF
25V
R2
1kΩ
R1
18.2kΩ
MIC2288YML
VIN
V
IN
3V to 4.2V
V
OUT
24V @ 50mA
EN
SW
FB
GND
GND
OVP
GND
C1
2.2μF
10V
D1
L1
10μH
C2
10μF
16V
R2
5kΩ
R1
31.6kΩ
MIC2288YML
VIN
VIN
5V
VOUT
9V @ 330mA
EN
SW
FB
GND
GND
OVP
GND
C1
2.2μF
10V
D1
Ref Description Part Number Vendor
C1 2.2 µF, 10V, 0805
X5R Cer Cap 08052D225KAT AVX
C2 10 µF, 16V, 1206
X5R Cer Cap 1206YD106MAT AVX
D1 1A, 40V Schotty
Diode MBRM140T3 On Semi.
L1 10 µH, 650 mA
Inductor LQH43CN100K03 Murata
Ref Description Part Number Vendor
C1 2.2 µF, 10V, 0805
X5R Cer Cap 08052D225KAT AVX
C2 4.7 µF, 25V, 1206
X5R Cer Cap 12066D475MAT AVX
D1 1A, 40V Schotty
Diode MBRM140T3 On Semi.
L1 10 µH, 650 mA
Inductor LQH32CN4R7M11 Murata
L1
10μH
C2
10μF
16V
R2
5kΩ
R1
43.2kΩ
MIC2288YML
VIN
V
IN
5V
V
OUT
12V @ 250mA
EN
SW
FB
GND
GND
OVP
GND
C1
2.2μF
10V
D1
L1
10μH
C2
4.7μF
25V
R2
1kΩ
R1
18.2kΩ
MIC2288YML
VIN
VIN
5V
VOUT
24V @ 80mA
EN
SW
FB
GND
GND
OVP
GND
C1
2.2μF
10V
D1
MX NNN
2018 Microchip Technology Inc. DS20006034B-page 15
MIC2288
7.0 PACKAGING INFORMATION
7.1 Package Marking Information
Example8-Lead TDFN*
XXX
NNN
SJA
408
Example5-Lead TSOT23*
XXXX
NNN
SHAA
943
Legend: XX...X Product code or customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
, , Pin one index is identified by a dot, delta up, or delta down (triangle
mark).
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information. Package may or may not include
the corporate logo.
Underbar (_) and/or Overbar () symbol may not be to scale.
3
e
3
e
TITLE 5 LEAD TSOT PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING # | TSOTESLDEPLEL UNIT | MM zan Hsc 1 m 2:249; fl L4 E u. ‘ mm m j 4 \ ML 0 2;;an Tl]? V1 E W umEs‘ s fl a mu m E n.»- E DETAIL 'A" m E E "on: i—‘7 § 5 1 mmenmns and tolerance: Lure as per ANSI " " ma 5m, 1994 2 me u racmg u m mold me 15 facing : down {or mm cm. 1: reverse mm/xem a A Dimming Ar: Exclusiv: of man flash and gate burr , A The foolleuglh measuring is based on the gauge plane method "mm 5. Au spacnlcnuon camply La Jedec Spec Moms Issue Q 5 AH ammmns are m milhmeters RECDMMENDED LAND PATTERN
MIC2288
DS20006034B-page 16 2018 Microchip Technology Inc.
5-Lead Thin SOT23 Package Outline & Recommended Land Pattern
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
TITLE 9 LEAD TDFN 2x2mm PACKAGE OUTLINE s RECOMMENDED LAND PATTERN DRAWING 4‘ I TDFNZZESLDEPLil UNIT MM o ° 5’ “a" H u, o + EDD iflofi + .13 +3,‘ n35+nus a U U iu [Li Usutn 10 am :u‘us EXP PAD 7’ ‘ ‘. a , Am Am u m J 4 EV mama 120mm ExR RAD w w mm 1, z. 3 Amp 1,2. 3 U‘Efitu‘UE—f+i was 44] D D D:, L, 1 20:0 ne—h—y—fi * Q @ [—1—flm 0 L75 5 5mm: PLANE J J 3 000*005 D152 REP H ‘ 74D D D D c; g 50 B512 «3 END VIEV "mg 1, z, 3 W NEITE‘ ‘. 5 NEITE‘ 1 MAX PACKAGE VARPAGE 1: nos MM 2‘ MAX ALLuwAELE BURR IS nmemn IN ALL DIRECTIEINS a PIN m 1: EIN m? mLL BE LAsER MARKED 4 RE]! CIRCLE m LAND RArrERn REPRESENT: THERMAL VIA SJZE :HuuLn BE mania: m IN DIAMETER AND :HuuLn BE CEINNECTED TEI END EUR MAX THERMAL PERFDRMANCE 5‘ GREEN RECTANELES (SHAnEn AREA) REPRESENT: suLDER STENCIL EIPENINE EIN EXFEISED FAD AREA :12E SHEIULD BE 040x030 MM 035:0 0L
2018 Microchip Technology Inc. DS20006034B-page 17
MIC2288
8-Lead 2 mm x 2 mm Thin DFN Package Outline and Recommended Land Pattern
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
MIC2288
DS20006034B-page 18 2018 Microchip Technology Inc.
NOTES:
2018 Microchip Technology Inc. DS20006034B-page 19
MIC2288
APPENDIX A: REVISION HISTORY
Revision A (May 2018)
Converted Micrel document MIC2288 to Micro-
chip data sheet template DS20006034A.
Minor grammatical text changes throughout.
Updated Low Output Voltage Ripple in Features.
Added clarification to EN description in Table 3-1.
Updated drawing for EN in Figure 5-1.
Updated drawings and figure captions for each
entry in Section 6.0 “Application Circuits”.
Revision B (September 2018)
Updated values for C2 in the table beneath
Figure 6-3.
MIC2288
DS20006034B-page 20 2018 Microchip Technology Inc.
NOTES:
2018 Microchip Technology Inc. DS20006034B-page 21
MIC2288
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Examples:
a) MIC2288YD5-TX: MIC2288, –40°C to +125°C
Temperature Range, 5-Lead
TSOT23, 3,000/Reel
(Reverse T/R)
b) MIC2288YD5-TR: MIC2288, –40°C to +125°C
Temperature Range, 5-Lead
TSOT, 3,000/Reel
c) MIC2288YML-TR: MIC2288, –40°C to +125°C
Temperature Range, 8-Lead
TDFN, 5,000/Reel
Device: MIC2288: 1A, 1.2 MHz PWM Boost Converter
Junction
Temperature
Range: Y = –40°C to +125°C, RoHS-Compliant
Package: D5 = 5-Lead Thin SOT23
ML = 8-Lead 2 mm x 2 mm TDFN
Media Type: TX = 3,000/Reel (Reverse T/R, TSOT only)
TR = 3,000/Reel (TSOT only)
TR = 5,000/Reel (TDFN only)
Note 1: Tape and Reel identifier only appears in the
catalog part number description. This identifier is
used for ordering purposes and is not printed on
the device package. Check with your Microchip
Sales Office for package availability with the
Tape and Reel option.
Device X XX -XX
Part No. Junction
Temp. Range
Package Media Type
MIC2288
DS20006034B-page 22 2018 Microchip Technology Inc.
NOTES:
YSTEM
2018 Microchip Technology Inc. DS20006034B-page 23
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BitCloud, chipKIT, chipKIT logo,
CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo,
JukeBlox, KeeLoq, Kleer, LANCheck, LINK MD, maXStylus,
maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip
Designer, QTouch, SAM-BA, SpyNIC, SST, SST Logo,
SuperFlash, tinyAVR, UNI/O, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
ClockWorks, The Embedded Control Solutions Company,
EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,
mTouch, Precision Edge, and Quiet-Wire are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BodyCom, CodeGuard,
CryptoAuthentication, CryptoAutomotive, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICSP, INICnet, Inter-Chip Connectivity,
JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation,
PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon,
QMatrix, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O,
SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
Silicon Storage Technology is a registered trademark of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2018, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-3533-4
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITYMANAGEMENTS
YSTEM
CERTIFIEDBYDNV
== ISO/TS16949==
6‘ ‘MICRDCHIP
DS20006034B-page 24 2018 Microchip Technology Inc.
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08/15/18

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