LM4040, LM4041 Datasheet by Microchip Technology

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‘ Mlcgcmp LM4040/LM4041
2017-2018 Microchip Technology Inc. DS20005757B-page 1
LM4040/LM4041
Features
Small SOT-23 Package
No Output Capacitor Required
Tolerates Capacitive Loads
Fixed Reverse-Breakdown Voltages of 1.225V,
2.500V, 4.096V, and 5.000V
Adjustable Reverse-Breakdown Version
Applications
Battery-Powered Equipment
Data Acquisition Systems
• Instrumentation
Process Control
Energy Management
Product Testing
Automotive Electronics
Precision Audio Components
General Description
Ideal for space critical applications, the LM4040 and
LM4041 precision voltage references are available in
the subminiature SOT-23 surface-mount package.
The LM4040 is available in fixed reverse-breakdown
voltages of 2.500V, 4.096V, and 5.000V. The LM4041
is available with a fixed 1.225V or an adjustable
reverse-breakdown voltage.
The minimum operating current ranges from 60 A for
the LM4041-1.2 to 74 A for the LM4040-5.0. LM4040
versions have a maximum operating current of 15 mA.
LM4041 versions have a maximum operating current of
12 mA.
The LM4040 and LM4041 have bandgap reference
temperature drift curvature correction and low dynamic
impedance, ensuring stable reverse-breakdown
voltage accuracy over a wide range of operating
temperatures and currents.
Package Types
1
NC
+-
3
2
LM4040/LM4041 (FIXED VERSION)
3-Pin SOT-23
1
-
FB +
3
2
LM4041 (ADJUSTABLE VERSION)
3-Pin SOT-23
Precision Micropower Shunt Voltage Reference
V5 ‘4» 0 ¢ 0 E E
LM4040/LM4041
DS20005757B-page 2 2017-2018 Microchip Technology Inc.
Typical Application Diagrams
Functional Block Diagrams
VS
RS
VR
IQ + IL
IQ
IL
LM4040
VO
LM4040/LM4041 Fixed Shunt
Regulator Application
VS
LM4041
Adjustable
R1
R2
RS
VO
VO = 1.233 (R2/R1 + 1)
LM4041 Adjustable Shunt
Regulator Application
+
LM4040/LM4041 Fixed
+
FB
VREF
LM4041 Adjustable
2017-2018 Microchip Technology Inc. DS20005757B-page 3
LM4040/LM4041
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Reverse Current......................................................................................................................................................20 mA
Forward Current......................................................................................................................................................10 mA
Maximum Output Voltage (LM4041-ADJ) ...................................................................................................................15V
Power Dissipation (TA = +25°C; Note 1) ..............................................................................................................306 mW
ESD Susceptibility (HBM; Note 2).............................................................................................................................. 2kV
ESD Susceptibility (MM; Note 2)...............................................................................................................................200V
Operating Ratings ‡
Reverse Current (LM4040-2.5) .................................................................................................................60 µA to 15 mA
Reverse Current (LM4040-4.1) .................................................................................................................68 µA to 15 mA
Reverse Current (LM4040-5.0) .................................................................................................................74 µA to 15 mA
Reverse Current (LM4041-1.2) .................................................................................................................60 µA to 12 mA
Reverse Current (LM4041-ADJ) ...............................................................................................................60 µA to 12 mA
Output Voltage Range (LM4041-ADJ) ......................................................................................................... 1.24V to 10V
Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
‡ Notice: The device is not guaranteed to function outside its operating ratings.
Note 1: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX (max-
imum junction temperature), JA (junction-to-ambient thermal resistance), and TA (ambient temperature).
The maximum allowable power dissipation at any temperature is PDMAX = (TJMAX – TA)/ JA or the number
given in the Absolute Maximum Ratings, whichever is lower. For the LM4040 and LM4041, TJMAX = +125°C
and the typical thermal resistance, when board-mounted, is +326°C/W for the SOT-23 package.
2: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 k in series
with 100 pF. The machine model is a 200 pF capacitor discharged directly into each pin.
LM4040/LM4041
DS20005757B-page 4 2017-2018 Microchip Technology Inc.
LM4040-2.5 ELECTRICAL CHARACTERISTICS (Note 1)
TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted.
Parameters Sym. Min. Typ. Max. Units Conditions
LM4040C
Reverse-Breakdown Voltage VR 2.500 V IR = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Tolerance (Note 2)
——±12mVI
R = 100 µA, TA = +25°C
——±29mVI
R = 100 µA
Minimum Operating Current IRMIN —4560µAT
A = +25°C
——65 —
Average Reverse-Breakdown
Voltage Temperature
Coefficient
VR/T ±20 ppm/°C IR = 10 mA, TA = +25°C
±15 ±100 IR = 1 mA
—±15I
R = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Change with Operating
Current Change
VR/IR—0.30.8mVI
RMIN IR 1mA,
TA = +25°C
——1.0 I
RMIN IR 1mA
—2.56.0 1mA IR 15 mA,
TA = +25°C
——8.0 1mA IR 15 mA
Reverse Dynamic Impedance ZR—0.30.9IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR, TA = +25°C
Wideband Noise eN—35µV
RMS IR = 100 µA, TA = +25°C,
10 Hz f 10 kHz
Reverse-Breakdown Voltage
Long-Term Stability
VR 120 ppm t = 1000 hrs., TA = +25°C
±0.1°C, IR = 100 µA
LM4040D
Reverse-Breakdown Voltage VR 2.500 V IR = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Tolerance (Note 2)
——±25mVI
R = 100 µA, TA = +25°C
——±49mVI
R = 100 µA
Minimum Operating Current IRMIN —4565µAT
A = +25°C
——70 —
Average Reverse-Breakdown
Voltage Temperature
Coefficient
VR/T ±20 ppm/°C IR = 10 mA, TA = +25°C
±15 ±150 IR = 1 mA
—±15I
R = 100 µA, TA = +25°C
Note 1: Specification for packaged product only.
2: The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room
temperature Reverse-Breakdown Voltage Tolerance ±[(VR/T)(65°C)(VR)]. VR/T is the VR tempera-
ture coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the
reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows:
a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of
±2.5 × 1.15% = ±29 mV.
2017-2018 Microchip Technology Inc. DS20005757B-page 5
LM4040/LM4041
Reverse-Breakdown Voltage
Change with Operating
Current Change
VR/IR—0.31.0mVI
RMIN IR 1mA,
TA = +25°C
——1.2 I
RMIN IR 1mA
—2.58.0 1mA IR 15 mA,
TA = +25°C
10.0 1 mA IR 15 mA
Reverse Dynamic Impedance ZR—0.31.1IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR, TA = +25°C
Wideband Noise eN—35µV
RMS IR = 100 µA,
10 Hz f 10 kHz
Reverse-Breakdown Voltage
Long-Term Stability
VR 120 ppm t = 1000 hrs., TA = +25°C
±0.1°C, IR = 100 µA
LM4040-2.5 ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED)
TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: Specification for packaged product only.
2: The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room
temperature Reverse-Breakdown Voltage Tolerance ±[(VR/T)(65°C)(VR)]. VR/T is the VR tempera-
ture coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the
reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows:
a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of
±2.5 × 1.15% = ±29 mV.
LM4040/LM4041
DS20005757B-page 6 2017-2018 Microchip Technology Inc.
LM4040-4.1 ELECTRICAL CHARACTERISTICS (Note 1)
TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted.
Parameters Sym. Min. Typ. Max. Units Conditions
LM4040C
Reverse-Breakdown Voltage VR 4.096 V IR = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Tolerance (Note 2)
——±20mVI
R = 100 µA, TA = +25°C
——±47mVI
R = 100 µA
Minimum Operating Current IRMIN —5068µAT
A = +25°C
——73 —
Average Reverse-Breakdown
Voltage Temperature
Coefficient
VR/T ±30 ppm/°C IR = 10 mA, TA = +25°C
±20 ±100 IR = 1 mA
—±20I
R = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Change with Operating
Current Change
VR/IR—0.50.9mVI
RMIN IR 1mA,
TA = +25°C
——1.2 I
RMIN IR 1mA
—3.07.0 1mA IR 15 mA,
TA = +25°C
10.0 1 mA IR 15 mA
Reverse Dynamic Impedance ZR—0.51.0IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR, TA = +25°C
Wideband Noise eN—80µV
RMS IR = 100 µA, TA = +25°C,
10 Hz f 10 kHz
Reverse-Breakdown Voltage
Long-Term Stability
VR 120 ppm t = 1000 hrs., TA = +25°C
±0.1°C, IR = 100 µA
LM4040D
Reverse-Breakdown Voltage VR 4.096 V IR = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Tolerance (Note 2)
——±41mVI
R = 100 µA, TA = +25°C
——±81mVI
R = 100 µA
Minimum Operating Current IRMIN —5073µAT
A = +25°C
——78 —
Average Reverse-Breakdown
Voltage Temperature
Coefficient
VR/T ±30 ppm/°C IR = 10 mA, TA = +25°C
±20 ±150 IR = 1 mA
—±20I
R = 100 µA, TA = +25°C
Note 1: Specification for packaged product only.
2: The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room
temperature Reverse-Breakdown Voltage Tolerance ±[(VR/T)(65°C)(VR)]. VR/T is the VR tempera-
ture coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the
reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows:
a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of
±2.5 × 1.15% = ±29 mV.
2017-2018 Microchip Technology Inc. DS20005757B-page 7
LM4040/LM4041
Reverse-Breakdown Voltage
Change with Operating
Current Change
VR/IR—0.51.2mVI
RMIN IR 1mA,
TA = +25°C
——1.5 I
RMIN IR 1mA
—3.09.0 1mA IR 15 mA,
TA = +25°C
13.0 1 mA IR 15 mA
Reverse Dynamic Impedance ZR—0.51.3IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR, TA = +25°C
Wideband Noise eN—80µV
RMS IR = 100 µA, TA = +25°C
10 Hz f 10 kHz
Reverse-Breakdown Voltage
Long-Term Stability
VR 120 ppm t = 1000 hrs., TA = +25°C
±0.1°C, IR = 100 µA
LM4040-4.1 ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED)
TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: Specification for packaged product only.
2: The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room
temperature Reverse-Breakdown Voltage Tolerance ±[(VR/T)(65°C)(VR)]. VR/T is the VR tempera-
ture coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the
reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows:
a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of
±2.5 × 1.15% = ±29 mV.
LM4040/LM4041
DS20005757B-page 8 2017-2018 Microchip Technology Inc.
LM4040-5.0 ELECTRICAL CHARACTERISTICS (Note 1)
TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted.
Parameters Sym. Min. Typ. Max. Units Conditions
LM4040C
Reverse-Breakdown Voltage VR 5.000 V IR = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Tolerance (Note 2)
——±25mVI
R = 100 µA, TA = +25°C
——±58mVI
R = 100 µA
Minimum Operating Current IRMIN —5474µAT
A = +25°C
——80 —
Average Reverse-Breakdown
Voltage Temperature
Coefficient
VR/T ±30 ppm/°C IR = 10 mA, TA = +25°C
±20 ±100 IR = 1 mA
—±20I
R = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Change with Operating
Current Change
VR/IR—0.51.0mVI
RMIN IR 1mA,
TA = +25°C
——1.4 I
RMIN IR 1mA
—3.58.0 1mA IR 15 mA,
TA = +25°C
12.0 1 mA IR 15 mA
Reverse Dynamic Impedance ZR—0.51.1IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR, TA = +25°C
Wideband Noise eN—80µV
RMS IR = 100 µA, TA = +25°C,
10 Hz f 10 kHz
Reverse-Breakdown Voltage
Long-Term Stability
VR 120 ppm t = 1000 hrs., TA = +25°C
±0.1°C, IR = 100 µA
LM4040D
Reverse-Breakdown Voltage VR 5.000 V IR = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Tolerance (Note 2)
——±50mVI
R = 100 µA, TA = +25°C
——±99mVI
R = 100 µA
Minimum Operating Current IRMIN —5479µAT
A = +25°C
——85 —
Average Reverse-Breakdown
Voltage Temperature
Coefficient
VR/T ±30 ppm/°C IR = 10 mA, TA = +25°C
±20 ±150 IR = 1 mA
—±20I
R = 100 µA, TA = +25°C
Note 1: Specification for packaged product only.
2: The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room
temperature Reverse-Breakdown Voltage Tolerance ±[(VR/T)(65°C)(VR)]. VR/T is the VR tempera-
ture coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the
reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows:
a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of
±2.5 × 1.15% = ±29 mV.
2017-2018 Microchip Technology Inc. DS20005757B-page 9
LM4040/LM4041
Reverse-Breakdown Voltage
Change with Operating
Current Change
VR/IR—0.51.3mVI
RMIN IR 1mA,
TA = +25°C
——1.8 I
RMIN IR 1mA
3.5 10.0 1 mA IR 15 mA,
TA = +25°C
15.0 1 mA IR 15 mA
Reverse Dynamic Impedance ZR—0.51.5IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR, TA = +25°C
Wideband Noise eN—80µV
RMS IR = 100 µA, TA = +25°C,
10 Hz f 10 kHz
Reverse-Breakdown Voltage
Long-Term Stability
VR 120 ppm t = 1000 hrs., TA = +25°C
±0.1°C, IR = 100 µA
LM4040-5.0 ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED)
TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: Specification for packaged product only.
2: The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room
temperature Reverse-Breakdown Voltage Tolerance ±[(VR/T)(65°C)(VR)]. VR/T is the VR tempera-
ture coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the
reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows:
a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of
±2.5 × 1.15% = ±29 mV.
LM4040/LM4041
DS20005757B-page 10 2017-2018 Microchip Technology Inc.
LM4041-1.2 ELECTRICAL CHARACTERISTICS (Note 1)
TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted.
Parameters Sym. Min. Typ. Max. Units Conditions
LM4041C
Reverse-Breakdown Voltage VR 1.225 V IR = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Tolerance (Note 2)
——±6mVI
R = 100 µA, TA = +25°C
——±14mVI
R = 100 µA
Minimum Operating Current IRMIN —4560µAT
A = +25°C
——65 —
Average Reverse-Breakdown
Voltage Temperature
Coefficient
VR/T ±20 ppm/°C IR = 10 mA, TA = +25°C
±15 ±100 IR = 1 mA
—±15I
R = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Change with Operating
Current Change
VR/IR—0.71.5mVI
RMIN IR 1mA,
TA = +25°C
——2.0 I
RMIN IR 1mA
—4.06.0 1mA IR 12 mA,
TA = +25°C
——8.0 1mA IR 12 mA
Reverse Dynamic Impedance ZR—0.51.5IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR, TA = +25°C
Wideband Noise eN—20µV
RMS IR = 100 µA, TA = +25°C,
10 Hz f 10 kHz
Reverse-Breakdown Voltage
Long-Term Stability
VR 120 ppm t = 1000 hrs., TA = +25°C
±0.1°C, IR = 100 µA
LM4041D
Reverse-Breakdown Voltage VR 1.225 V IR = 100 µA, TA = +25°C
Reverse-Breakdown Voltage
Tolerance (Note 2)
——±12mVI
R = 100 µA, TA = +25°C
——±24 I
R = 100 µA
Minimum Operating Current IRMIN —4565µAT
A = +25°C
——70 —
Average Reverse-Breakdown
Voltage Temperature
Coefficient
VR/T ±20 ppm/°C IR = 10 mA, TA = +25°C
±15 ±150 IR = 1 mA
—±15I
R = 100 µA, TA = +25°C
Note 1: Specification for packaged product only.
2: The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room
temperature Reverse-Breakdown Voltage Tolerance ±[(VR/T)(65°C)(VR)]. VR/T is the VR tempera-
ture coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the
reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows:
a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of
±2.5 × 1.15% = ±29 mV.
2017-2018 Microchip Technology Inc. DS20005757B-page 11
LM4040/LM4041
Reverse-Breakdown Voltage
Change with Operating
Current Change
VR/IR—0.72.0mVI
RMIN IR 1mA,
TA = +25°C
——2.5 I
RMIN IR 1mA
—2.58.0 1mA IR 12 mA,
TA = +25°C
10.0 1 mA IR 12 mA
Reverse Dynamic Impedance ZR—0.52.0IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR, TA = +25°C
Wideband Noise eN—20µV
RMS IR = 100 µA, TA = +25°C,
10 Hz f 10 kHz
Reverse-Breakdown Voltage
Long-Term Stability
VR 120 ppm t = 1000 hrs., TA = +25°C
±0.1°C, IR = 100 µA
LM4041-1.2 ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED)
TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: Specification for packaged product only.
2: The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room
temperature Reverse-Breakdown Voltage Tolerance ±[(VR/T)(65°C)(VR)]. VR/T is the VR tempera-
ture coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the
reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows:
a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of
±2.5 × 1.15% = ±29 mV.
VDUT VOUT VREF VOUT
LM4040/LM4041
DS20005757B-page 12 2017-2018 Microchip Technology Inc.
LM4041-ADJ ELECTRICAL CHARACTERISTICS (Note 1)
TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted.
Parameters Sym. Min. Typ. Max. Units Conditions
LM4041C
Reverse-Breakdown Voltage VR 1.233 V IR = 100 µA, VOUT = 5V
Reverse-Breakdown Voltage
Tolerance (Note 2)
——±6.2mVI
R = 100 µA, TA = +25°C
——±14mVI
R = 100 µA
Minimum Operating Current IRMIN —4560µAT
A = +25°C
——65 —
Reference Voltage Change
with Operating Current
VREF/
IR
—0.71.5mVI
RMIN IR 1mA,
VOUT 1.6V (Note 3), TA =
+25°C
——2.0 I
RMIN IR 1mA,
VOUT 1.6V (Note 3)
—2.04.0 1mA IR 12 mA,
VOUT 1.6V (Note 3), TA =
+25°C
——6.0 1mA IR 12 mA,
VOUT 1.6V (Note 3)
Reference Voltage Change
with Output Voltage Change
VREF/
VO
–1.55 –2.0 mV/V IR = 1 mA, TA = +25°C
— –2.5 IR = 1 mA
Feedback Current IFB 60 100 nA TA = +25°C
— 120
Average Reference Voltage
Temperature Coefficient
VREF/
T
±20 ppm/°C VOUT = 5V, IR = 10 mA,
TA = +25°C
±15 ±100 VOUT = 5V, IR = 1 mA
—±15— V
OUT = 5V, IR = 100 µA,
TA = +25°C
Dynamic Output Impedance ZOUT —0.3IR = 1 mA, f = 120 Hz, TA =
+25°C, IAC = 0.1 IR, VOUT =
VREF
——2.0 V
OUT = 10V, TA = +25°C
Wideband Noise eN—20µV
RMS IR = 100 µA, TA = +25°C,
10 Hz f 10 kHz
Note 1: Specification for packaged product only.
2: The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room
temperature Reverse-Breakdown Voltage Tolerance ±[(VR/T)(65°C)(VR)]. VR/T is the VR tempera-
ture coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the
reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows:
a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of
±2.5 × 1.15% = ±29 mV.
3: When VOUT 1.6V, the LM4041-ADJ must operate at reduced IR. This is caused by the series resistance
of the die attach between the die (-) output and the package (-) output pin. See the Output Saturation
curve in the Typical Performance Curves section.
IR VREF VOUT
2017-2018 Microchip Technology Inc. DS20005757B-page 13
LM4040/LM4041
Reverse-Breakdown Voltage
Long-Term Stability
VR 120 ppm t = 1000 hrs., TA = +25°C
±0.1°C, IR = 100 µA
LM4041D
Reverse-Breakdown Voltage VR 1.233 V IR = 100 µA, VOUT = 5V
Reverse-Breakdown Voltage
Tolerance (Note 2)
——±12mVI
R = 100 µA, TA = +25°C
——±24mVI
R = 100 µA
Minimum Operating Current IRMIN —4565µAT
A = +25°C
——70 —
Reference Voltage Change
with Operating Current
VREF/
IR
—0.72.0mVI
RMIN IR 1mA,
VOUT 1.6V (Note 3),
TA = +25°C
——2.5 I
RMIN IR 1mA,
VOUT 1.6V (Note 3)
—2.06.0 1mA IR 12 mA,
VOUT 1.6V (Note 3),
TA = +25°C
——8.0 1mA IR 12 mA,
VOUT 1.6V (Note 3)
Reference Voltage Change
with Output Voltage Change
VREF/
VO
–1.55 –2.5 mV/V IR = 1 mA, TA = +25°C
— –3.0 IR = 1 mA
Feedback Current IFB 60 150 nA TA = +25°C
— 200
Average Reference Voltage
Temperature Coefficient
VREF/
T
±20 ppm/°C VOUT = 5V, IR = 10 mA,
TA = +25°C
±15 ±150 VOUT = 5V, IR = 1 mA
—±15— V
OUT = 5V, IR = 100 µA,
TA = +25°C
Dynamic Output Impedance ZOUT —0.3IR = 1 mA, f = 120 Hz, TA =
+25°C, IAC = 0.1 IR, VOUT =
VREF
——2.0 V
OUT = 10V, TA = +25°C
LM4041-ADJ ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED)
TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: Specification for packaged product only.
2: The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room
temperature Reverse-Breakdown Voltage Tolerance ±[(VR/T)(65°C)(VR)]. VR/T is the VR tempera-
ture coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the
reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows:
a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of
±2.5 × 1.15% = ±29 mV.
3: When VOUT 1.6V, the LM4041-ADJ must operate at reduced IR. This is caused by the series resistance
of the die attach between the die (-) output and the package (-) output pin. See the Output Saturation
curve in the Typical Performance Curves section.
LM4040/LM4041
DS20005757B-page 14 2017-2018 Microchip Technology Inc.
Wideband Noise eN—20µV
RMS IR = 100 µA, TA = +25°C,
10 Hz f 10 kHz
Reverse-Breakdown Voltage
Long-Term Stability
VR 120 ppm t = 1000 hrs., TA = +25°C
±0.1°C, IR = 100 µA
LM4041-ADJ ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED)
TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: Specification for packaged product only.
2: The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room
temperature Reverse-Breakdown Voltage Tolerance ±[(VR/T)(65°C)(VR)]. VR/T is the VR tempera-
ture coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the
reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows:
a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of
±2.5 × 1.15% = ±29 mV.
3: When VOUT 1.6V, the LM4041-ADJ must operate at reduced IR. This is caused by the series resistance
of the die attach between the die (-) output and the package (-) output pin. See the Output Saturation
curve in the Typical Performance Curves section.
LM4040. Output Impedance vs. H LM4041. Large Signal Response Test FB .r" Reverse Characteristics
2017-2018 Microchip Technology Inc. DS20005757B-page 15
LM4040/LM4041
Test Circuits
FIGURE 1-1: LM4040.
FIGURE 1-2: LM4041.
FIGURE 1-3: Reverse Characteristics
Test Circuit.
FIGURE 1-4: Output Impedance vs.
Frequency Test Circuit.
FIGURE 1-5: Large Signal Response Test
Circuit.
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Operating Temperature Range TA–40 +85 °C —
Storage Temperature TS–65 +150 °C —
Lead Temperature +215 °C Vapor phase, 60s
Lead Temperature +220 °C Infrared, 15s
Package Thermal Resistance
3-Pin SOT-23 JA +326 °C/W —
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
V
IN
1Hz RATE LM4040
R
S
V
R
R
S
30k
V
IN
1Hz rate LM4041-1.2
V
R
FB
2V / step
V
OUT
IR
( + )
( – )
LM4041-ADJ
V
+
CL
120k
FB
IR
V
OUT
LM4041-ADJ
( + )
FB
( – )
100k
INPUT
+ 15V
5.1k
1“ In -\m.N+1oo “A ‘00 g \R - zoouA 5.0 3 TJ-gsc @100 E m g ‘ o \ ‘2‘ m >3 5v 3 a) a 3 25V : E ‘ z 02 0‘ ‘ 01 ‘00 1k 10x 100k 1M 1 10 100 1k 10k 100k FREQUENCV (Hz) FHEOUENCV (Hz) LM4040 Noise Voltage vs. I - ImA ‘ a 9 5 , \T -25"C.A\ -| v . . g f‘ a R >5 0 ‘ . I— E TJ=250 w ‘ , S l..— g 3 a g >‘ 1 f 0 1k 10k 100k 1M 0 2° 4° 60 80 REVERSE CURRENT (5AA) FHEDUENCV HZ % a) ‘ 100 N " am“; erafi./ 8“ 4a“ 60 )/V NV" 40 \ (JV n=25\c 20 l o 2 A 6 8 10 REVERSE VOLTAGE (V) LM4040 Reverse RESPONSE TIME {#5) D LM4040-2.5 Start-Up too 200 300 400 RESPONSE T‘ME s LM4040-5.0 Start-Up
LM4040/LM4041
DS20005757B-page 16 2017-2018 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
FIGURE 2-1: LM4040 Output Impedance
vs. Frequency.
FIGURE 2-2: LM4040 Output Impedance
vs. Frequency.
FIGURE 2-3: LM4040 Reverse
Characteristics and Minimum Operating Current.
FIGURE 2-4: LM4040 Noise Voltage vs.
Frequency.
FIGURE 2-5: LM4040-2.5 Start-Up
Characteristics (RS = 30 k).
FIGURE 2-6: LM4040-5.0 Start-Up
Characteristics (RS = 30 k).
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Nowse (“VA/HZ) 100 E \R-ZDOLIA 5.0 ETJ-gsc 20\ ‘ ‘0\ EV \ 05 25v : 0.2 01 1 10 100 1k 10k100k FHEOUENCV (Hz) VOLTAG E (V) O 10 20 SD 40 RESPONSE TIME (p5) OUTPUT SATURAT‘ON (V) m u z 4 o m a E 0 2 4 6 8 10 ‘2 LM4041 Noise Voltage vs. LMADM VADJ VAN - VHF . 5W “C Q? 2540 / OUTPUT CURRENT mA 1k wk \OOk 1M FREQUENCY (Hz) LM4041 Output Impedance LM4041 Large Signal
2017-2018 Microchip Technology Inc. DS20005757B-page 17
LM4040/LM4041
FIGURE 2-7: LM4041 Noise Voltage vs.
Frequency.
FIGURE 2-8: LM4041 Output Saturation.
FIGURE 2-9: LM4041 Output Impedance
vs. Frequency.
FIGURE 2-10: LM4041 Large Signal
Response.
LM4040/LM4041
DS20005757B-page 18 2017-2018 Microchip Technology Inc.
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
Pin Number
Fixed Pin Number
Adjustable Pin Name Description
1 2 + Cathode. Connect to positive voltage.
1 FB Feedback. Connect to a resistive divider network to set the
output voltage.
2 3 Anode. Connect to negative voltage.
3 NC Not internally connected. This pin must be left floating or con-
nected to –.
2017-2018 Microchip Technology Inc. DS20005757B-page 19
LM4040/LM4041
4.0 APPLICATION INFORMATION
The stable operation of the LM4040 and LM4041
references require an external capacitor greater than
10 nF connected between the (+) and (–) pins. Bypass
capacitors with values between 100 pF and 10 nF have
been found to cause the devices to exhibit instabilities.
4.1 Schottky Diode
LM4040-x.x and LM4041-1.2 in the SOT-23 package
have a parasitic Schottky diode between Pin 2 (–) and
Pin 3 (die attach interface connect). Pin 3 of the
SOT-23 package must float or be connected to Pin 2.
The LM4041-ADJ use Pin 3 as the (–) output.
4.2 Conventional Shunt Regulator
In a conventional shunt regulator application (see
Figure 5-1), an external series resistor (RS) is
connected between the supply voltage and the
LM4040-x.x or LM4041-1.2 reference. RS determines
the current that flows through the load (IL) and the
reference (IQ). Because load current and supply
voltage may vary, RS should be small enough to supply
at least the minimum acceptable IQ to the reference
even when the supply voltage is at its minimum and the
load current is at its maximum value. When the supply
voltage is at its maximum and IL is at its minimum, RS
should be large enough so that the current flowing
through the LM4040-x.x is less than 15 mA, and the
current flowing through the LM4041-1.2 or
LM4041-ADJ is less than 12 mA.
RS is determined by the supply voltage (VS), the load
and operating current, (IL and IQ), and the reference’s
reverse breakdown voltage (VR):
EQUATION 4-1:
4.3 Adjustable Regulator
The LM4041-ADJ’s output voltage can be adjusted to
any value between 1.24V and 10V. It is a function of the
internal reference voltage (VREF) and the ratio of the
external feedback resistors as shown in Figure 5-2.
The output is found using the following equation:
EQUATION 4-2:
The actual value of the internal VREF is a function of VO.
The corrected VREF is determined by:
EQUATION 4-3:
VREF/VO is found in the Electrical Characteristics
section and is typically –1.3 mV/V and VY is equal to
1.233V. Replace the value of VREF in Equation 4-2 with
the value VREF found using Equation 4-3.
Note that actual output voltage can deviate from that
predicted using the typical VREF/VO in Equation 4-3;
for C-grade parts, the worst case VREF/VO is –
2.5 mV/V and VY = 1.248V.
The following example shows the difference in output
voltage resulting from the typical and worst case values
of VREF/VO.
Let VO = +9V. Using the typical values of VREF/VO,
VREF is 1.223V. Choosing a value of R1 = 10 k, R2 =
63.272 k. Using the worst case VREF/VO for the
C-grade and D-grade parts, the output voltage is
actually 8.965V and 8.946V respectively. This results in
possible errors as large as 0.39% for the C-grade parts
and 0.59% for the D-grade parts. Once again, resistor
values found using the typical value of VREF/VO will
work in most cases, requiring no further adjustment.
RS
VSVR

ILIQ
+
-----------------------
=
VOVREF R2 R11+=
Where:
VODesired Output Voltage
VREF VO
VREF
VO
----------------


VY
+=
Where:
VODesired Output Voltage
Voltage Level Detector. Voltage Level Detector. Fast Positive Clamp, 2.4V + Bidirectional Clamp :2.4V. I E 3 Bidirectional Adjustable 1E K_,LJ Bidirectional Adjustable
LM4040/LM4041
DS20005757B-page 20 2017-2018 Microchip Technology Inc.
5.0 TYPICAL APPLICATION CIRCUITS
FIGURE 5-1: Voltage Level Detector.
FIGURE 5-2: Voltage Level Detector.
FIGURE 5-3: Fast Positive Clamp, 2.4V +
VD1.
FIGURE 5-4: Bidirectional Clamp ±2.4V.
FIGURE 5-5: Bidirectional Adjustable
Clamp ±1.8V to ±2.4V.
FIGURE 5-6: Bidirectional Adjustable
Clamp ±2.4V to ±6V.
R1
120k
R2
1M
FB
+
LM4041-ADJ
D1
λ
< –12V
LED ON
R3
200
–5V
D1
λ
LM4041-
ADJ
R1
120k
R2
1M
FB
+
R3
330
> –12V
LED ON
–5V
V
IN
V
OUT
D1
1N914
D2
1N914
R3
240k
R4
240k
R1
I
R2
50A
LM4041-ADJ
FB
+
D1
1N457
R3
510k
LM4041-ADJ
D2
1N457
V
OUT
R2
510k
V
IN
R1
I
+FB FB
LM4041-ADJ
+
VIN
R1
R2
390k
R3
500k
FB
+
LM4041-ADJ
D1
1N457
R4
390k
D2
1N457
LM4041-ADJ
FB
+
I
VOUT
VIN
R1I
LM4041-ADJ
D2
1N457
R3
1M
R2
330k
VOUT
LM4041-ADJ
FB
+
FB
+
D1
1N457
R4
330k
5 fl * O 1 24V+ 5A R1 4N28 GA‘ N m RESHOLD Floating Current Detector. 1 5 1.24V mA 4» ’ 5v K 1,24V THRESHOLD Precision Floating Current Detector.
2017-2018 Microchip Technology Inc. DS20005757B-page 21
LM4040/LM4041
FIGURE 5-7: Floating Current Detector.
FIGURE 5-8: Current Source.
FIGURE 5-9: Precision Floating Current Detector.
* D1 can be any LED, V
F
= 1.5V to 2.2V at 3mA. D1 may act as an indicator.
D1 will be on if I
THRESHOLD
falls below the threshold current, except with I = O.
0 to 20mA
R1
390Ω
± 2%
1N4002
D2
LM4041-ADJ
+
FB
λ
D1* 1
2
3
6
5
4
4N28
N.C.
ITHRESHOLD = + = 3.2mA
1.24V
R1
5A
4N28 GAIN
N.C.
R2
470k
CMOS
+ 5V
+15V
R1
2N2905
2N
3964
R2
120k
LM4041-ADJ
FB
+
1.24V
R1
I
OUT
=
1A < I
OUT
= 100mA
* D1 can be any LED, VF = 1.5V to 2.2V at 3mA. D1 may act as an indicator.
D1 will be on if ITHRESHOLD falls below the threshold current, except with I = O.
+5V
R3
100k
CMOS
R4
10M
1
2
3
6
5
4
4N28
N.C.
R2
22k
LM4041-ADJ
+
R1
332Ω
±1% FB
1N914
2N2222
D1*
λ
ITHRESHOLD = = 3.7mA ± 2%
1.24V
R1
D2
1N4002
0 to 20 mA
NNN
LM4040/LM4041
DS20005757B-page 22 2017-2018 Microchip Technology Inc.
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
Device Top Side Marking
LM4040CYM3-2.5-TR Y2C
LM4040CYM3-4.1-TR Y4C
LM4040CYM3-5.0-TR Y5C
LM4040DYM3-2.5-TR Y2D
LM4040DYM3-4.1-TR Y4D
LM4040DYM3-5.0-TR Y5D
LM4041CYM3-ADJ-TR YAC
LM4041CYM3-1.2-TR Y1C
LM4041DYM3-ADJ-TR YAD
LM4041DYM3-1.2-TR Y1D
3-Pin SOT-23*
Top Side Bottom Side
XXX NNN
Example
Top Side Bottom Side
Y2D J9M
Legend: XX...X Product code or customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
, , Pin one index is identified by a dot, delta up, or delta down (triangle
mark).
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information. Package may or may not include
the corporate logo.
Underbar (_) and/or Overbar () symbol may not be to scale.
3
e
3
e
TITLE J LEAD SOTL‘i PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING at | SOT23i3LDipLil | UNIT MM 2 52010 120A 0370mm 0 mom) 9: (a nest m- m A: 12k!) i swan mum 1cm 2 32E: , m' m w- m (2 pin) (2 Phi} 5mm mu: a 013mm) n.1mxmx) m m u mm) m (2 pm) DIZ'Y(MAX] 45* 7 7 i E o unto 020 3 End View ‘ " NOTE 0 76010 020 I All dmlensmns are in millimeters a. Package aux-[ace to be matte finish vm 11~1a. mm m: v14 5M, 1952 ‘7 a me is lacing up for mold & trim/form A Dimension are excluswe mold flash and gate bun, A Du'nansxon are excluswe solder planng. W
2017-2018 Microchip Technology Inc. DS20005757B-page 23
LM4040/LM4041
3-Lead SOT-23 Package Outline and Recommended Land Pattern
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
LM4040/LM4041
DS20005757B-page 24 2017-2018 Microchip Technology Inc.
NOTES:
2017-2018 Microchip Technology Inc. DS20005757B-page 25
LM4040/LM4041
APPENDIX A: REVISION HISTORY
Revision A (April 2017)
Converted Micrel data sheet LM4040/LM4041 to
Microchip DS20005757A.
Minor text changes throughout.
Updated temperature information in all Electrical
Characteristics tables to better reflect which val-
ues are valid for TA = +25°C.
Revision B (July 2018)
Corrected part number for Reverse Current in
Operating Ratings to LM4041-ADJ.
Updated Section 6.1 “Package Marking Infor-
mation” drawing and information.
Updated information in Product Identification Sys-
tem.
Updated “Reverse-Breakdown Voltage Change
with Operating Current Change” conditions for
LM4041-1.2 Electrical Characteristics (Note 1)
and LM4041-ADJ Electrical Characteristics
(Note 1).
LM4040/LM4041
DS20005757B-page 26 2017-2018 Microchip Technology Inc.
NOTES:
PART NO. 41x
2017-2018 Microchip Technology Inc. DS20005757B-page 27
LM4040/LM4041
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Examples:
a) LM4040CYM3-2.5-TR: LM4040, ±0.5%, 100 ppm/°C,
–40°C to +85°C Temp. Range,
3-Lead SOT-23, 2.500V,
3,000/Reel
b) LM4040CYM3-4.1-TR: LM4040, ±0.5%, 100 ppm/°C,
–40°C to +85°C Temp. Range,
3-Lead SOT-23, 4.096V,
3,000/Reel
c) LM4040CYM3-5.0-TR: LM4040, ±0.5%, 100 ppm/°C,
–40°C to +85°C Temp. Range,
3-Lead SOT-23, 5.000V,
3,000/Reel
d) LM4040DYM3-2.5-TR: LM4040, ±1.0%, 150 ppm/°C,
–40°C to +85°C Temp. Range,
3-Lead SOT-23, 2.500V,
3,000/Reel
e) LM4040DYM3-4.1-TR: LM4040, ±1.0%, 150 ppm/°C,
–40°C to +85°C Temp. Range,
3-Lead SOT-23, 4.096V,
3,000/Reel
f) LM4040DYM3-5.0-TR: LM4040, ±1.0%, 150 ppm/°C,
–40°C to +85°C Temp. Range,
3-Lead SOT-23, 5.000V,
3,000/Reel
g) LM4041CYM3-ADJ-TR: LM4041, ±0.5%, 100 ppm/°C,
–40°C to +85°C Temp. Range,
3-Lead SOT-23, 1.24V to 10V,
3,000/Reel
h) LM4041CYM3-1.2-TR: LM4041, ±0.5%, 100 ppm/°C,
–40°C to +85°C Temp. Range,
3-Lead SOT-23, 1.225V,
3,000/Reel
i) LM4041DYM3-ADJ-TR: LM4041, ±1.0%, 150 ppm/°C,
–40°C to +85°C Temp. Range,
3-Lead SOT-23, 1.24V to 10V,
3,000/Reel
j) LM4041DYM3-1.2-TR: LM4041, ±1.0%, 150 ppm/°C,
–40°C to +85°C Temp. Range,
3-Lead SOT-23, 1.225V,
3,000/Reel
PART NO.
XX
Package
Device
Device: LM4040: Precision Micropower Shunt Voltage
Reference
LM4041: Precision Micropower Shunt Voltage
Reference
Accuracy, Temp.
Coefficient: C = ±0.5%, 100 ppm/C
D = ±1.0%, 150 ppm/C
Temperature
Range: Y = –40C to +85C (Industrial)
Package: M3 = 3-Lead SOT-23
Voltage: -2.5 = 2.500V
-4.1 = 4.096V
-5.0 = 5.000V
-1.2 = 1.225V (LM4041 Only)
ADJ = 1.24V to 10V (LM4041 Only)
Media Type TR = 3,000/Reel
X
Accuracy,
X
Temperature
Range
-X.X
Voltage
Temperature
Coefficient
-XX
Media
Type
Note 1: Tape and Reel identifier only appears in the
catalog part number description. This identifier is
used for ordering purposes and is not printed on
the device package. Check with your Microchip
Sales Office for package availability with the
Tape and Reel option.
LM4040/LM4041
DS20005757B-page 28 2017-2018 Microchip Technology Inc.
NOTES:
YSTEM
2017-2018 Microchip Technology Inc. DS20005757B-page 29
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BitCloud, chipKIT, chipKIT logo,
CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo,
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countries.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
Silicon Storage Technology is a registered trademark of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2017-2018, Microchip Technology Incorporated, All Rights
Reserved.
ISBN: 978-1-5224-3309-5
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITYMANAGEMENTS
YSTEM
CERTIFIEDBYDNV
== ISO/TS16949==
6‘ ‘MICRDCHIP
DS20005757B-page 30 2017-2018 Microchip Technology Inc.
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