SD2933 Datasheet by STMicroelectronics

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This is information on a product in full production.
July 2016 DocID7193 Rev 15 1/16
SD2933
HF/VHF/UHF RF power N-channel MOSFETs
Datasheet
-
production data
Figure 1. Pin connection
Features
Gold metalization
Excellent thermal stability
Common source configuration
P
OUT
= 300 W min. with 20 dB gain @ 30 MHz
Thermally enhanced packaging for lower
junction temperatures
Description
The SD2933 is a gold metalized N-channel MOS
field-effect RF power transistor, intended for use
in 50 V dc large signal applications up to 150
MHz. Its special low thermal resistance package
makes it ideal for ISM applications, where
reliability and ruggedness are critical factors.
M177 Epoxy sealed
1
3
4
2
1. Drain
2. Source
3. Gate
4, 5. Source
5
Table 1. Device summary
Order code Marking Package Packaging
SD2933W SD2933
(1)
M177 Plastic tray
1. For more details please refer to Chapter 6: Marking, packing and shipping specifications.
www.st.com
Contents SD2933
2/16 DocID7193 Rev 15
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance (30 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Test circuit (30 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 14
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID7193 Rev 15 3/16
SD2933 Electrical data
16
1 Electrical data
1.1 Maximum rating
T
CASE
= 25 °C
1.2 Thermal data
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
(BR)DSS
Drain source voltage 125 V
V
DGR
Drain-gate voltage (R
GS
= 1MΩ) 125 V
V
GS
Gate-source voltage ±40 V
I
D
Drain current 40 A
P
DISS
Power dissipation 648 W
E
AS
Avalanche energy, single pulse
(I
D
= 53 A, 800 µH coil) 1100 mJ
E
AR(1)
1. Repetitive rating: Pulse width limited by maximum junction temperature / repetitive avalanche causes
additional power losses that can be calculated as: P
AV
= E
AR
* f
Avalanche energy, repetitive 50 mJ
T
J
Max. operating junction temperature 200 °C
T
STG
Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJ-C
Junction to case thermal resistance 0.27 °C/W
Electrical characteristics SD2933
4/16 DocID7193 Rev 15
2 Electrical characteristics
T
CASE
= 25 °C
Table 4. Static
Symbol Test conditions Min. Typ. Max. Unit
V
(BR)DSS
V
GS
= 0 V I
DS
= 200 mA 125 V
I
DSS
V
GS
= 0 V V
DS
= 50 V 100 µA
I
GSS
V
GS
= 20 V V
DS
= 0 V 500 nA
V
GS(Q)(1)
1. V
GS(Q)
and G
FS
sorted with alpha/numeric code marked on unit.
V
DS
= 10 V I
D
= 250 mA 1.5 4 V
V
DS(ON)
V
GS
= 10 V I
D
= 20 A 3.0 V
G
FS(1)
V
DS
= 10 V I
D
= 10 A see Table 5: G
FS
sort mho
C
ISS
V
GS
= 0 V V
DS
= 50 V f = 1 MHz 1000 pF
C
OSS
V
GS
= 0 V V
DS
= 50 V f = 1 MHz 372 pF
C
RSS
V
GS
= 0 V V
DS
= 50 V f = 1 MHz 29 pF
Table 5. G
FS
sort
G
FS
sort Value
A 10 - 10.99
B11 - 11.99
C 12 - 12.99
D 13 - 13.99
E 14 - 14.99
F 15 - 15.99
G 16 - 16.99
H 17 - 18
Table 6. Dynamic
Symbol Test Conditions Min. Typ. Max. Unit
P
OUT
V
DD
= 50 V I
DQ
= 250 mA f = 30 MHz 300 400 W
G
PS
V
DD
= 50 V I
DQ
= 250 mA P
OUT
= 300 W f = 30 MHz 20 23.5 dB
η
D
V
DD
= 50 V I
DQ
= 250 mA P
OUT
= 150 W f = 30 MHz 50 65 %
Load
mismatch
V
DD
= 50 V I
DQ
= 250 mA P
OUT =
300 W f = 30 MHz
all phase angles 3:1 VSWR
WT
DocID7193 Rev 15 5/16
SD2933 Impedance
16
3 Impedance
Figure 2. Impedance data schematic
Table 7. Impedance data
fZ
IN
(Ω)Z
DL
(Ω)
30 MHz 1.8 - j 0.2 2.8 + j 2.3
108 MHz 1.9 + j 0.2 1.6 + j 1.4
175 MHz 1.9 + j 0.3 1.5 + j 1.6
Z
DL
D
S
Z
IN
G
Typical Input
Impedance Typical Drain
Load Impedance
Typical performance (30 MHz) SD2933
6/16 DocID7193 Rev 15
4 Typical performance (30 MHz)
Figure 3. Capacitance vs. drain voltage Figure 4. Drain current vs. gate voltage
Figure 5. Gate-source voltage vs. case
temperature Figure 6. Maximum thermal resistance vs. case
temperature
0 1020304050
Vds, Drain Source Voltage (V)
10
100
1000
10000
Capacitance (pF)
Ciss
Coss
Crss
f= 1 MHz
1 1.5 2 2.5 3 3.5 4
Vgs, Gate-Source Voltage (V)
0
5
10
15
Id, Drain Current (A)
Vdd=10V
Tc = + 80
o
C
Tc = + 25
o
C
Tc = - 20
o
C
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (ºC)
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
Vgs, GATE-SOURCE VOLTAGE (NORMALIZED)
Vdd= 10 V
Id=.1 A
Id=.25 A
Id= 1 A
Id= 2 A
Id= 3 A
Id= 5 A
Id= 4 A
Id= 7 A
Id= 10 A
Id= 12 A
Id= 15 A
25 30 35 40 45 50 55 60 65 70 75 80 85
Tc, CASE TEMPERATURE (°C)
0.26
0.27
0.28
0.29
0.3
0.31
0.32
0.33
RTH(j-c) (°C/W)
, / 28/?
DocID7193 Rev 15 7/16
SD2933 Typical performance (30 MHz)
16
Figure 7. Transient thermal impedance
Figure 8. Transient thermal impedance model
0.00
0.05
0.10
0.15
0.20
0.25
0.30
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Zth , Deg C / W
Rectangular power pulse width (sec)
10%
20%
30%
40%
50%
60%
70%
80%
90%
AM10216V1
P R C
P R C 3
C =2.4810922 F
R =.088 Ohm
P R C
P R C 2
C =.1182727 F
R =.099 Ohm
P R C
P R C 1
C =.0035904 F
R =.083 Ohm
I_DC
W atts
AM10217V1AM10217V1
Typical performance (30 MHz) SD2933
8/16 DocID7193 Rev 15
Figure 9. Output power vs. input power Figure 10. Output power vs. input power (at
different temperature)
Figure 11. Power gain vs. output power Figure 12. Efficiency vs. output power
Figure 13. Output power vs. supply voltage Figure 14. Output power vs. gate voltage
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Pin, Input Power ( W )
0
100
200
300
400
500
Pout, Output Power (W)
Vdd= 50 V
Vdd= 40 V
f= 30 MHz
Idq=250mA
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Pin, Input Power (W)
0
100
200
300
400
500
Pout, Output Power (W)
f= 30 MHz
Idq= 250 mA
Vdd= 50 V
Tc= -20°CTc= 25°C
Tc= 80°C
0 100 200 300 400
Pout, Output Power (W)
18
19
20
21
22
23
24
25
26
Power Gain (dB)
f= 30 MHz
Idq= 250 mA
Vdd= 50 V
0 100 200 300 400
Pout, Output Power (W)
20
30
40
50
60
70
80
Efficiency (%)
f=30MHz
Vdd=50V
Idq=250mA
24 26 28 30 32 34 36 38 40 42 44 46 48 50
Vdd, Supply Voltage (V)
100
150
200
250
300
350
400
450
Pout, Output Power (W)
f = 30 MHz
Idq = 250 mA Pin = 2.6 W
Pin = 0.65 W
Pin = 1.3 W
-3 -2 -1 0 1 2 3
Vgs, GATE-SOURCE VOLTAGE (V)
0
100
200
300
400
500
Pout, OUTPUT POWER (W)
Tc= -20°C
Tc= +80°C
Tc= +25°C
F= 30 MHz
Vdd= 50 V
Idq= 250 mA
Pin= constant
DocID7193 Rev 15 9/16
SD2933 Typical performance (30 MHz)
16
4.1 Test circuit (30 MHz)
Figure 15. 30 MHz test circuit schematic
Table 8. Transmission line dimensions
Dim. Inch mm
A 0.532 13.51
B 0.250 6.35
C 0.181 4.59
D 0.383 9.37
E 0.351 8.91
F 0.633 16.08
G 0.477 12.12
H 0.438 11.12
J 0.200 5.08
K 0.164 4.16
L 0.174 4.42
M 0.817 20.75
N 0.350 8.89
P 0.779 19.79
R 0.639 16.23
Typical performance (30 MHz) SD2933
10/16 DocID7193 Rev 15
S 0.165 4.19
T 1.017 25.84
U 0.375 9.52
V 0.456 11.58
W 0.325 8.24
X 0.650 16.50
Table 9. 30 MHz test circuit part list
Component Description
C1,C9 0.01 μF / 500 V surface mount ceramic chip capacitor
C2, C3 750 pF ATC 700B surface mount ceramic chip capacitor
C4 300 pF ATC 700B surface mount ceramic chip capacitor
C5,C10,C11,C14,C16 10000 pF ATC 200B surface mount ceramic chip capacitor
C6 510 pF ATC 700B surface mount ceramic chip capacitor
C7 300 pF ATC 700B surface mount ceramic chip capacitor
C8 175-680 pF type 46 standard trimmer capacitor
C12 47 μF / 63 V aluminum electrolytic radial lead capacitor
C13 1200 pF ATC 700B surface mount ceramic chip capacitor
C15 100 μF / 63 V aluminum electrolytic radial lead capacitor
R1,R3 1 K OHM 1 W surface mount chip resistor
R2 560 OHM 2 W wire-wound axis lead resistor
T1 HF 2-30 MHz surface mount 9:1 transformer
T2 RG - 142B/U 50 OHM coaxial cable OD = 0.165[4.18] L 15”[381.00]
covered with 15”[381.00] tinned copper tubular brand 13/65” [5.1] width
L1 1 3/4 turn air-wound 16 AWG ID = 0.219 [5.56] poly-coated magnet wire
L2 1 3/4 turn air-wound 12 AWG ID = 0.250 [6.34] bus bar wire
RFC1,RFC2 3 turns 14 AWG wire through ferrite toroid
FB1 Surface mount EMI shield bead
FB2 Toroid
PCB ULTRALAM 2000. 0.030” THK, εr = 2.55, 2 Oz ED CU both sides
Table 8. Transmission line dimensions (continued)
Dim. Inch mm
DocID7193 Rev 15 11/16
SD2933 Typical performance (30 MHz)
16
Figure 16. 30 MHz test circuit photomaster
Figure 17. 30 MHz test circuit
6.4 inches
4 inches
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Package information SD2933
12/16 DocID7193 Rev 15
5 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 18. M177 package outline
(a)
a. Controlling dimensions in inches.
DocID7193 Rev 15 13/16
SD2933 Package information
16
Table 10. M177 (.500 dia 4/L N/HERM W/FLG) package mechanical data
Dim. mm Inch
Min. Typ. Max. Min. Typ. Max.
A5.72
-
5.97 0.225
-
0.235
B 6.73 6.96 0.265 0.275
C 21.84 22.10 0.860 0.870
D 28.70 28.96 1.130 1.140
E 13.84 14.10 0.545 0.555
F 0.08 0.18 0.003 0.007
G 2.49 2.74 0.098 0.108
H 3.81 4.32 0.150 0.170
I 7.11 0.280
J 27.43 28.45 1.080 1.120
K 15.88 16.13 0.625 0.635
fix W SD2933 CZ><><>< vy="" mar="" cz="" yy="">
Marking, packing and shipping specifications SD2933
14/16 DocID7193 Rev 15
6 Marking, packing and shipping specifications
Figure 19. Marking layout for SD2933W
Table 11. Packing and shipping specifications
Order code Packaging Pcs per
tray Dry pack
humidity G
FS
code Lot code
SD2933W Plastic tray 25 < 10% Not mixed Not mixed
Table 12. Marking specifications
Symbol Description
W Wafer process code
X G
FS
sort
CZ Assembly plant
xxx Last 3 digits of diffusion lot
VY Diffusion plant
MAR Country of origin
CZ Test and finishing plant
y Assembly year
yy Assembly week
DocID7193 Rev 15 15/16
SD2933 Revision history
16
7 Revision history
Table 13. Document revision history
Date Revision Changes
30-Jul-2004 9
22-Sep-2011 10
Inserted Section 6: Marking, packing and shipping
specifications.
Updated EAS in Table 2: Absolute maximum ratings.
Minor text changes to improve readability.
03-Oct-2011 11 Updated parameter Z
IN
in Table 7: Impedance data.
17-Nov-2011 12 Inserted Figure 7: Transient thermal impedance and Figure 8:
Transient thermal impedance model.
10-Jan-2012 13 Updated Figure 7: Transient thermal impedance.
30-Sep-2013 14
Added row for “Avalanche energy, repetitive” and footnote to
Table 2: Absolute maximum ratings
Minor text and formatting changes
14-Jul-2016 15 Updated V
GS
in Table 2: Absolute maximum ratings.
Minor text changes.
SD2933
16/16 DocID7193 Rev 15
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