IRFU110, SiHFU110 Datasheet by Vishay Siliconix

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Document Number: 91397 www.vishay.com
S10-2549-Rev. C, 08-Nov-10 1
Power MOSFET
IRFU110, SiHFU110
Vishay Siliconix
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Straight Lead
Available in Tape and Reel
Dynamic dV/dt Rating
Repetitive Avalanche Rated
•Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 , IAS = 4.3 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V) 100
RDS(on) ()V
GS = 10 V 0.54
Qg (Max.) (nC) 8.3
Qgs (nC) 2.3
Qgd (nC) 3.8
Configuration Single
N-Channel MOSFET
G
D
S
IPAK
(TO-251)
GDS
D
ORDERING INFORMATION
Package IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFU110-GE3
Lead (Pb)-free IRFU110PbF
SiHFU110-E3
SnPb IRFU110
SiHFU110
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 °C ID
4.3
ATC = 100 °C 2.7
Pulsed Drain CurrentaIDM 17
Linear Derating Factor 0.2 W/°C
Single Pulse Avalanche EnergybEAS 75 mJ
Repetitive Avalanche CurrentaIAR 4.3 A
Repetitive Avalanche EnergyaEAR 2.5 mJ
Maximum Power Dissipation TC = 25 °C PD25 W
Peak Diode Recovery dV/dtcdV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91397
2S10-2549-Rev. C, 08-Nov-10
IRFU110, SiHFU110
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - - 110 °C/W
Maximum Junction-to-Case (Drain) RthJC --5.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 100 V, VGS = 0 V - - 25 μA
VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 0.90 Ab- - 0.54
Forward Transconductance gfs VDS = 50 V, ID = 0.90 A 1.1 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 180 -
pFOutput Capacitance Coss -81-
Reverse Transfer Capacitance Crss -15-
Total Gate Charge Qg
VGS = 10 V ID = 5.6 A, VDS = 80 V,
see fig. 6 and 13b
--8.3
nC Gate-Source Charge Qgs --2.3
Gate-Drain Charge Qgd --3.8
Turn-On Delay Time td(on)
VDD = 50 V, ID = 5.6 A,
Rg = 24 , RD = 8.4 , see fig. 10b
-6.9-
ns
Rise Time tr -16-
Turn-Off Delay Time td(off) -15-
Fall Time tf -9.4-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.0-
nH
Internal Source Inductance LS-6.0-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--1.5
A
Pulsed Diode Forward CurrentaISM --12
Body Diode Voltage VSD TJ = 25 °C, IS = 1.5 A, VGS = 0 Vb--2.5V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb- 100 200 ns
Body Diode Reverse Recovery Charge Qrr - 0.44 0.88 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
In. Drain Current (Amps) to, Drain Cunem (Amps) «n! w“ m" m“ m' In“ xo-1 1c" a 5v ‘ aous M's: mum 'c = 25% m" w‘ V95, DIain-m—Soulce Voltage (vols) Linus PJLSE new ‘5 r 150°C 13“ m‘ V95, Draln-mASource Voltage (volvs) m1 S. ‘E 2 1a“ .5 S .5 >2 ”‘ v55 — 50v EOus PJLSE mum 4 a 5 7 a 9 m V95. Gale~lchource Voltage (volts) 3.w 25 (Norm ed) 0.5 RnsmN), DrainAw—Souroe On Resistance Va: = 10v 0 9 >59 -40 ~20 u an m (an no mo nan no :50 TJ, Junction Temperature (°C)
Document Number: 91397 www.vishay.com
S10-2549-Rev. C, 08-Nov-10 3
IRFU110, SiHFU110
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
VISHAYa Capacitance (pF) VGS- Gake~lo~Source Voltage (volis) § Q m m0 V55 - 0v, 9 - MHZ nus - cgs + an- ca5 SHUHTED Dr‘ss ‘ can Cass ' Eds ‘ Eras 10‘ V55, Drain-loSource Voltage (volls) C} n SEE new; 13 a a 5 e 10 Q6, Total Gale Charge (n0) 'su- Reverse Drain Current (Amps) ID. main current (Amps) z o ‘04: 0.4 u a 1 2 1 a 2 o Vsu. Source-lo-Dlain Voltage (volts) m2 opswm 1N ms AREA LINIIED 5 3V “Datum 2 w 5 2 1 a was": 7 L-fiv“: smeLE pun. o I '0‘; 5‘2 510: swag 5,0: V05, Drain—to-Source Voltage (volls)
www.vishay.com Document Number: 91397
4S10-2549-Rev. C, 08-Nov-10
IRFU110, SiHFU110
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
L5 b lo. Drain Current (Am) 0 m o n 25 av 75 m 12: 1:0 To. Case Temperature 1°C) 5mm: WLSE "HiRMAL azswmsn Thermal Response (ch) Md WYES: 1, wvv mum. u-u/zz ‘ 2. 9w 1,.an x 1“,: . [c 10’ 10‘5 10“ 10': 1V2 0. 1 1 10 t‘, Rectangular Pulse Duration (seconds)
Document Number: 91397 www.vishay.com
S10-2549-Rev. C, 08-Nov-10 5
IRFU110, SiHFU110
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Pulse width 1 µs
Duty factor 0.1 %
RD
VGS
Rg
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
E‘s SmgIa Pulse Energy in“) 14de @T J a a: .= Suiting n, Junction 17v 1a: :5; Tompnramrq'C]
www.vishay.com Document Number: 91397
6S10-2549-Rev. C, 08-Nov-10
IRFU110, SiHFU110
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
Rg
IAS
0.01 Ω
tp
D.U.T
L
VDS
+
-VDD
10 V
Vary tp to obtain
required IAS
I
AS
V
DS
V
DD
V
DS
t
p
QGS QGD
QG
V
G
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
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Document Number: 91397 www.vishay.com
S10-2549-Rev. C, 08-Nov-10 7
IRFU110, SiHFU110
Vishay Siliconix
Fig.14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91397.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
D.U.T. Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
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Revision: 08-Feb-17 1Document Number: 91000
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