AOT410L Datasheet by Alpha & Omega Semiconductor Inc.

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ALPHA&01\1EGA SEMICONDUCTOR G“???
AOT410L/AOB410L
100V N-Channel MOSFET
SDMOS
TM
General Description Product Summary
V
DS
100V
I
D
(at V
GS
=10V) 150A
R
DS(ON)
(at V
GS
=10V) < 6.5mΩ (< 6.2mΩ∗)
R
DS(ON)
(at V
GS
= 7V) < 7.5mΩ (< 7.2mΩ∗)
100% UIS Tested
100% R
g
Tested
Symbol
The AOT410L/AOB410L is fabricated with SDMOS
TM
trench technology that combines excellent R
DS(ON)
with low
gate charge & low Q
rr
.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
Maximum Units
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
AOB410L TO-263 Tape & Reel 800
AOT410L TO-220 Tube 1000
Orderable Part Number Package Type Form Minimum Order Quantity
G
D
S
TO-220
Top View Bottom View
G
G
SD
DS
DD
TO-263
D2PAK
Top View Bottom View
D
D
S
G
G
S
AOB410L
AOT410L
V
DS
V
GS
I
DM
I
AS
,I
AR
E
AS
,E
AR
T
J
, T
STG
Symbol
t 10s
Steady-State
Steady-State
R
θJC
* Surface mount package TO263
12
54
15
405Pulsed Drain Current
C
Parameter Typ Max
T
C
=25°C
1.9
167
T
C
=100°C
V±25Gate-Source Voltage
Drain-Source Voltage 100 V
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
10
Continuous Drain
Current
125
12
A
Continuous Drain
Current
G
I
D
150
108
T
C
=25°C
T
C
=100°C
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
333
1.2
T
A
=25°C
Power Dissipation
B
50
A
T
A
=25°C I
DSM
A
T
A
=70°C
P
D
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
0.35
65
0.45
Units
Maximum Junction-to-Ambient
Junction and Storage Temperature Range -55 to 175 °C
Thermal Characteristics
°C/W
R
θJA
Rev.3.0: November 2013
www.aosmd.com Page 1 of 7
ALPHA & OMEGA AMICOND UC TOR QQUOV) Total Gate Charge
AOT410L/AOB410L
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 10
T
J
=55°C 50
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 2 3 4 V
I
D(ON)
405 A
5.1 6.5
T
J
=125°C 8.8 11
5.8 7.5 m
4.8 6.2 m
5.5 7.2 m
g
FS
70 S
V
SD
0.63 1 V
I
S
150 A
C
iss
5290 6622 7950 pF
C
oss
415 594 770 pF
C
rss
130 215 300 pF
R
g
0.3 0.64 1
Q
(10V)
85
107
129
nC
m
T0220
V
GS
=7V, I
D
=20A
T0220
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=20A
Forward Transconductance
I
S
=1A,V
GS
=0V
Total Gate Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
TO263
V
DS
=5V
,
I
D
=250µA
V
GS
=0V, V
DS
=50V, f=1MHz
SWITCHING PARAMETERS
V
DS
=0V, V
GS
25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Reverse Transfer Capacitance
V
DS
=5V, I
D
=20A
V
GS
=7V, I
D
=20A
TO263
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Diode Forward Voltage
Q
g
(10V)
85
107
129
nC
Q
gs
23 28.5 34 nC
Q
gd
24 40 56 nC
t
D(on)
28 ns
t
r
22 ns
t
D(off)
43.5 ns
t
f
14.5 ns
t
rr
19 27 35 ns
Q
rr
124 177 230 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
V
GS
=10V, V
DS
=50V, I
D
=20A
Gate Source Charge
Gate Drain Charge
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=50V, R
L
=2.5,
R
GEN
=3
Turn-Off Fall Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PDis based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.3.0: November 2013 www.aosmd.com Page 2 of 7
ALPHA & OMEGA SEMICONDUCTOR CS \ 6V Va: / / / 125* c / Voltage (More E) Figure 4: On-nesxsrance vs. Junction Temperature
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
30
60
90
120
150
180
34567
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
3
4
5
6
7
8
0 5 10 15 20 25 30
RDS(ON) (m
)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=7V
ID=20A
VGS=10V
ID=20A
25°C
125
°
C
V
DS
=5V
VGS=7V
VGS=10V
0
30
60
90
120
150
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=5V
6.5V
7V
10V
5.5V
6V
18
40
Voltage (Note E)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
4
6
8
10
12
5 6 7 8 9 10
RDS(ON) (m
)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev.3.0: November 2013 www.aosmd.com Page 3 of 7
ALPHA&OMEGA SEMICONDUCTOR Flgure a: Mlxlmum Forward Biased Flguve 1n: Single Pulse Power Rating Junction-la-
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 20 40 60 80 100 120
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
2000
4000
6000
8000
10000
0 10 20 30 40 50 60
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
1000
2000
3000
4000
5000
0.00001 0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
Coss
C
rss
VDS=50V
ID=20A
TJ(Max)=175°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
100
µ
s
18
40
Figure 10: Single Pulse Power Rating Junction
-
to
-
Case (Note F)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
RθJC=0.45°C/W
Rev.3.0: November 2013 www.aosmd.com Page 4 of 7
ALPHA&OMEGA SEMICONDUCTOR an OS M Ian 0 Pulse wmm (S) Tang: ('C)
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
1.0
10.0
100.0
1000.0
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability (Note C)
0
50
100
150
200
250
300
350
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°C)
Figure 13: Power De-rating (Note F)
0
40
80
120
160
0 25 50 75 100 125 150 175
Current rating ID(A)
T
CASE
(
°
C)
TA=25°C
1
10
100
1000
0.0001 0.01 1 100 10000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction
-
to
-
TA=25°C
TA=150°C
TA=100°C
TA=125°C
18
40
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
CASE
(
°
C)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
RθJA=65°C/W
Rev.3.0: November 2013 www.aosmd.com Page 5 of 7
ALPHA&0MEGA SEMICONDUCTOR CS Peak Cunem vs. am Sofiness Factor vs. dl/dt
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
20
25
30
35
40
80
120
160
200
240
280
320
0 5 10 15 20 25 30
Irm (A)
Qrr (nC)
IS(A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
di/dt=800A/µs125ºC
125ºC
25ºC
25ºC
Qrr
Irm
0
10
20
30
40
0
40
80
120
160
200
240
280
0 500 1000
Irm (A)
Qrr (nC)
di/dt (A/µ
µµ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
125ºC
125ºC
25ºC
25ºC
Is=20A
Q
rr
Irm
-1
0
1
2
3
4
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
S
trr (ns)
IS(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
trr
S
0
0.5
1
1.5
2
0
10
20
30
40
50
0 200 400 600 800 1000
S
trr (ns)
di/dt (A/µ
µµ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
125ºC
25ºC
25ºC
125ºC
Is=20A
trr
S
Peak Current vs. di/dt
Softness Factor vs. di/dt
Rev.3.0: November 2013 www.aosmd.com Page 6 of 7
AOT410L/AOB410L
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.3.0: November 2013 www.aosmd.com Page 7 of 7

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