IRF9952PbF Datasheet by Infineon Technologies

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International I<2r rectifier="" |="" prcnannet="" dram-source="" voltage="" vd5="" 30="" as="" 2="" ta="25”C" 3="" 5="" -2="" 3="" ta="" :="" mac="" 2="" a="" -1="" a="" putsed="" dram="" current="" ibm="" 16="" 40="" ta:="" 25m="" 0="" 'ta="" 1="" 3="" smgte="" putse="" avatanche="" energy="" em="" 44="" 57="" mj="" avalanche="" current="" w?="" 2="" 0="" -t="" 3="" a="" e»;="" 2="">
N-Channel P-Channel
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS ± 20
TA = 25°C 3.5 -2.3
TA = 70°C 2.8 -1.8
Pulsed Drain Current IDM 16-10
Continuous Source Current (Diode Conduction) IS1.7 -1.3
TA = 25°C 2.0
TA = 70°C 1.3
Single Pulse Avalanche Energy EAS 44 57 mJ
Avalanche Current IAR 2.0 -1.3 A
Repetitive Avalanche Energy EAR 0.25 mJ
Peak Diode Recovery dv/dt dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C
HEXFET® Power MOSFET
PD - 95135
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
lGeneration V Technology
lUltra Low On-Resistance
lDual N and P Channel MOSFET
lSurface Mount
lVery Low Gate Charge and
Switching Losses
lFully Avalanche Rated
lLead-Free
IRF9952PbF
Description
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient RθJA 62.5 °C/W
Continuous Drain Current
Maximum Power Dissipation
A
ID
P
D
V
W
Symbol Maximum Units
D
1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D
1
D
2
D
2
G
1
S
2
G
2
S1
Top View
8
1
2
3
45
6
7
N-Ch P-Ch
VDSS 30V -30V
RDS(on) 0.10 0.25
Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509
www.irf.com 1
09/15/04
Internationcd Ink Rechfler Parameler Mm Typ Max UNIS Cundlhuns NrCh 30 7 7 PrCh 730 7 7 NrCh 7 Cl 0I5 7 Reierence Io ZS'C, ‘D : ImA PVCI‘ 7 0015 7 Reierence Io ZS'C, ‘D:'1mA 7 005 CID VGS’10V.ID:Z2A l‘ 7 U 12 0 I5 7 Cl 165 CI 250 7 Cl 9 Cl 400 NrCh 7 7 PrCh , 0 7 7 NrCh 7 12 7 PrCh 7 2 4 7 G: NrCh 7 7 2 U PrCh 7 7 ,2 0 NrCh 7 7 25 VDS : 24V. VGS : 0V T1 : I25'C PrCh 7 7 ,25 VD V, T1 : I25'C less GaIeVloVSuuvce Forwavd Leakage N79 7 7 1100 VG NrCh 7 G 9 14 PrCh 7 G I 12 NrCh 7 1 0 2 0 PrCh 7 1 7 3 4 NrCh 7 1 3 3 5 PrCh 7 1 I 2 2 NrCh 7 G 2 12 PrCh 7 9 7 19 NrCh 7 E 3 13 PrCh 7 14 23 NrCh 7 13 26 PrCh 7 20 40 NrCh 7 3 0 G 0 PrCh 7 G 9 14 NrCh 7 190 7 NChannEl PrCh 7 190 7 NrCh 7 120 7 PrCh 7 1 10 7 NrCh 7 SI 7 PrCh 7 54 7 Parameher Mm Typ Max Unns Condmans NCh 7 7 I 7 PrCh 7 7 71 3 N»Ch 7 7 16 PrCh 7 7 16 NrCh 7 a a2 12 25's, ‘5 :125A Ves : 0v 3 PrCh 7 4132 712 29:15:71 25A‘VGS:0V 1: NCh 7 27 53 PrCh 7 27 54 NCh 7 2E 57 PrCh 7 31 62 F
IRF9952PbF
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Surface mounted on FR-4 board, t 10sec.
Parameter Min. Typ. Max. Units Conditions
N-Ch 30 VGS = 0V, ID = 250µA
P-Ch -30 VGS = 0V, ID = -250µA
N-Ch 0.015 Reference to 25°C, ID = 1mA
P-Ch 0.015 Reference to 25°C, ID = -1mA
0.08 0.10 VGS = 10V, ID = 2.2A
0.12 0.15 VGS = 4.5V, ID = 1.0A
0.165 0.250 VGS = -10V, ID = -1.0A
0.290 0.400 VGS = -4.5V, ID = -0.50A
N-Ch 1.0 VDS = VGS, ID = 250µA
P-Ch -1.0 VDS = VGS, ID = -250µA
N-Ch 12 VDS = 15V, ID = 3.5A
P-Ch 2.4 VDS = -15V, ID = -2.3A
N-Ch 2.0 VDS = 24V, VGS = 0V
P-Ch -2.0 VDS = -24V, VGS = 0V
N-Ch 25 VDS = 24V, VGS = 0V, TJ = 125°C
P-Ch -25 VDS = -24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage N-P ±100 VGS = ±20V
N-Ch 6.9 14
P-Ch 6.1 12
N-Ch 1.0 2.0
P-Ch 1.7 3.4
N-Ch 1.8 3.5
P-Ch 1.1 2.2
N-Ch 6.2 12
P-Ch 9.7 19
N-Ch 8.8 18
P-Ch 14 28
N-Ch 13 26
P-Ch 20 40
N-Ch 3.0 6.0
P-Ch 6.9 14
N-Ch 190
P-Ch 190
N-Ch 120 pF
P-Ch 110
N-Ch 61
P-Ch 54
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJBreakdown Voltage Temp. Coefficient
RDS(ON) Static Drain-to-Source On-Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
QgTotal Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
trRise Time
td(off) Turn-Off Delay Time
tfFall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
V/°C
V
S
µA
nC
ns
N-Channel
ID = 1.8A, VDS = 10V, VGS = 10V
P-Channel
ID = -2.3A, VDS = -10V, VGS = -10V
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0Ω,
RD = 10
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0,
RD = 10
N-Channel
VGS = 0V, VDS = 15V,  = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V,  = 1.0MHz
N-Ch
P-Ch
Parameter Min. Typ. Max. Units Conditions
N-Ch 1.7
P-Ch -1.3
N-Ch 16
P-Ch 16
N-Ch 0.82 1.2 TJ = 25°C, IS = 1.25A, VGS = 0V
P-Ch -0.82 -1.2 TJ = 25°C, IS = -1.25A, VGS = 0V
N-Ch 27 53
P-Ch 27 54
N-Ch 28 57
P-Ch 31 62
Source-Drain Ratings and Characteristics
ISContinuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF =1.25A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -1.25A, di/dt = 100A/µs
N-Channel ISD 2.0A, di/dt 100A/µs, VDD V(BR)DSS, TJ 150°C
P-Channel ISD -1.3A, di/dt 84A/µs, VDD V(BR)DSS, TJ 150°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
Notes:
Pulse width 300µs; duty cycle 2%.
N-Channel Starting TJ = 25°C, L = 22mH RG = 25, IAS = 2.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 67mH RG = 25, IAS = -1.3A.
nA
movna'kmo‘ IEER Recflhe'
IRF9952PbF
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Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
N-Channel
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.
4
T = 25°C
T = 15C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
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IRF9952PbF
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Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
2.2A
0
.00
0
.02
0
.04
0
.06
0
.08
0
.10
0
.12
0
.14
0
.16
03691215
A
I = 3.5A
D
GS
V , Gate-to-Source Voltage (V)
RDS (on) , Drain-to-Source On Resistance ()
0
20
40
60
80
100
25 50 75 100 125 150
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 0.89A
1.6A
BOTTOM 2.0A
D
0
.04
0
.06
0
.08
0
.10
0
.12
0 2 4 6 8 10 12
A
I , Drain Current (A)
D
V = 10V
GS
V = 4.5V
GS
RDS (on) , Drain-to-Source On Resistance ()
movna'kmo‘ IEER Recflhe' Fig 10. Typwcal Gate Charge Vs.
IRF9952PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
N-Channel
0
50
100
150
200
250
300
350
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0246810
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D1.8A
V = 10V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
movna'kmo‘ IEER Recflhe'
IRF9952PbF
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Fig 14. Typical Transfer Characteristics
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
Fig 15. Typical Source-Drain Diode
Forward Voltage
P-Channel
0.1
1
10
100
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
0.1
1
10
100
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
20µs PULSE WIDTH
T = 150°C
J
0.1
1
10
100
3.0 4.0 5.0 6.0 7.0 8.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.
4
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
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IRF9952PbF
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Fig 16. Normalized On-Resistance
Vs. Temperature
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
Fig 17. Typical On-Resistance Vs. Drain
Current
Fig 18. Typical On-Resistance Vs. Gate
Voltage
P-Channel
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-1.0A
0
.0
0
.5
1
.0
1
.5
2
.0
2
.5
0.0 1.0 2.0 3.0 4.0 5.0
A
-I , Drain Current (A)
D
V = -10V
V = -4.5V
GS
GS
0
.00
0
.20
0
.40
0
.60
0
.80
0 3 6 9 12 15
A
GS
I = -2.3A
D
-V , Gate-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance ( )
RDS(on) , Drain-to-Source On Resistance ( )
25 50 75 100 125 150
0
30
60
90
120
150
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-0.58A
-1.0A
-1.3A
movna'kmo‘ IEER Recflhe' \C \ \\\~ \ \C ‘\ \~ ~.. > 0 Fig 21. Typical Gate Charge Vs, SINGLE PULSE
IRF9952PbF
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Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance
Vs.
Drain-to-Source Voltage
P-Channel
0
100
200
300
400
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0246810
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-2.3A
V =-10V
DS
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
movna'kmoI IEER RECHHC’ are shown in mIHImeIers (Inches) I C EHHHH I O ’ilflrfl] B] [U Q I I I I I I I I Q] I I I If Q] [U [U U] [U 44 F H H H H/ // I§9R PVWWA INTERNATIONAL O F7101)“: \ RECTIFIER \. LOGO H H H H \\ www.irf.com
IRF9952PbF
www.irf.com 9
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILL IME T ERSINCHES MIN MAX
DIM
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
F OOT PRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONF ORMS TO JEDE C OUT LINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070
]
DATE CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
Internationot IEIR Rectifier International IEER Rectifier
IRF9952PbF
10 www.irf.com
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04

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