BAV23CLT1G Datasheet by ON Semiconductor

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0N Semiconductorg www.0nsemi.com
© Semiconductor Components Industries, LLC, 2008
October, 2016 Rev. 3
1Publication Order Number:
BAV23CLT1/D
BAV23CL, NSVBAV23CL
Dual High Voltage Common
Cathode Switching Diode
Features
Moisture Sensitivity Level: 1
ESD Rating Human Body Model: Class 2
ESD Rating Machine Model: Class C
Fast Switching Speed
Switching Application
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD TV
Power Supply
Industrial
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR250 V
Repetitive Peak Reverse Voltage VRRM 250 V
Peak Forward Current IF400 mA
NonRepetitive Peak @ t = 1.0 s
Forward Surge Current @ t = 100 s
@ t = 10 ms
IFSM 9.0
3.0
1.7
A
Peak Forward Surge Current IFM(surge) 625 mAdc
NonRepetitive Peak
Per Human Body Model
Per Machine Model
HBM
MM
4.0
400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device Package Shipping
ORDERING INFORMATION
SOT23
CASE 318
STYLE 9
MARKING DIAGRAM
1
2
3
www.onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV23CLT1G SOT23
(PbFree)
3000 / Tape &
Reel
1
AA MG
G
AA = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
3
CATHODE 2
ANODE
ANODE
1
2
3
BAV23CLT3G SOT23
(PbFree)
10000 / Tape &
Reel
NSVBAV23CLT1G SOT23
(PbFree)
3000 / Tape &
Reel
www.cnsemi.com
BAV23CL, NSVBAV23CL
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
SINGLE HEATED
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
PD265
2.1
mW
mW/°C
Thermal Resistance, JunctiontoAmbient (Note 1) RJA 472 °C/W
Thermal Reference, JunctiontoAnode Lead (Note 1) R_ψJL 263 °C/W
Thermal Reference, JunctiontoCase (Note 1) R_ψJC 289 °C/W
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
PD345
2.7
mW
mW/°C
Thermal Resistance, JunctiontoAmbient (Note 2) RJA 362 °C/W
Thermal Reference, JunctiontoAnode Lead (Note 2) R_ψJL 251 °C/W
Thermal Reference, JunctiontoCase (Note 2) R_ψJC 250 °C/W
DUAL HEATED (Note 3)
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
PD390
3.1
mW
mW/°C
Thermal Resistance, JunctiontoAmbient (Note 1) RJA 321 °C/W
Thermal Reference, JunctiontoAnode Lead (Note 1) R_ψJL 159 °C/W
Thermal Reference, JunctiontoCase (Note 1) R_ψJC 138 °C/W
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
PD540
4.3
mW
mW/°C
Thermal Resistance, JunctiontoAmbient (Note 2) RJA 231 °C/W
Thermal Reference, JunctiontoAnode Lead (Note 2) R_ψJL 148 °C/W
Thermal Reference, JunctiontoCase (Note 2) R_ψJC 119 °C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
1. FR-4 @ 100 mm2, 1 oz. copper traces, still air.
2. FR-4 @ 500 mm2, 2 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
0.1
100
Adc
Reverse Breakdown Voltage
(IBR = 100 Adc)
V(BR) 250 Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT5.0 pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 )
trr 150 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
r”? l’:| ”H | | L__J
BAV23CL, NSVBAV23CL
www.onsemi.com
3
Figure 1. Forward Voltage Figure 2. Reverse Current
VF
, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
1.41.21.00.80.40.2
0.001
0.01
0.1
1
250200150100500
0.0001
0.001
0.01
0.1
10
100
Figure 3. Total Capacitance
VR, REVERSE VOLTAGE (V)
352520151050
0
0.5
1.0
1.5
2.0
2.5
3.0
IF
, FORWARD CURRENT (mA)
Ir, REVERSE CURRENT (A)
CT
, TOTAL CAPACITANCE (pF)
0.6
0°C
125°C
40°C
75°C
25°C
150°C
125°C
40°C
75°C
25°C
1
30 40
TA = 25°C
f = 1 MHz
150°C
0°C
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820
0.1 F
D.U.T.
VR
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 3.0 mA
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
IF
INPUT SIGNAL
Figure 4. Recovery Time Equivalent Test Circuit
fir” fi¥ j 1—‘7 ’1’ %% i: L {L fT
BAV23CL, NSVBAV23CL
www.onsemi.com
4
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BAV23CLT1/D
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