BFR750L3RH Datasheet by Infineon Technologies

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(ifleon AN 6‘6 Qualmea RoHS / Type Marking Pin Configuration Package
2007-04-26
1
BFR750L3RH
2
3
1
NPN Silicon Germanium RF Transistor*
High gain ultra low noise RF transistor
Provides outstanding performance for a wide rang
e
of wireless applications up to 10 GHz
Ideal for WLAN and all 5-6 GHz applications
High OIP3 and P-1dB for driver stages
High maximum stable and available gain
Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz
150 GHz fT-Silicon Germanium technology
Extremly small and flat leadless package,
reduced height 0.32 mm max.
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR750L3RH R8 1=B 2=C 3=E TSLP-3-9
1Pb-containing package may be available upon special request
@ TA CES CBO EBO c B Ts i A stq sz TA CE VBE EB ’c ’0 CE
2007-04-26
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BFR750L3RH
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0°C
T
A
0°C
VCEO
4
3.5
V
Collector-emitter voltage VCES 13
Collector-base voltage VCBO 13
Emitter-base voltage VEBO 1.2
Collector current IC90 mA
Base current IB9
Total power dissipation1)
TS 96°C
Ptot 360 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 150 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 3 mA, IB = 0
V(BR)CEO 4 4.7 - V
Collector-emitter cutoff current
VCE = 13 V, VBE = 0
ICES - - 100 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 10 µA
DC current gain
IC = 60 mA, VCE = 3 V, pulse measured
hFE 160 250 400 -
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
RthJS demanded by Ptot and TS, to be fulfilled by design
(ifineon Electrical Characteristics at TA = 25°C, unless otherwise s ecified Values AC Characteristics (verified by random sampling
2007-04-26
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BFR750L3RH
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 60 mA, VCE = 3 V, f = 2 GHz
fT- 37 - GHz
Collector-base capacitance
VCB = 3 V, f = 1 MHz, emitter grounded
Ccb - 0.24 0.42 pF
Collector emitter capacitance
VCE = 3 V, f = 1 MHz, base grounded
Cce - 0.31 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, collector grounded
Ceb - 0.97 -
Noise figure
IC = 25 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
IC = 25 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt
F
-
-
0.6
1.1
-
-
dB
Power gain, maximum stable1)
IC = 60 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 21 - dB
Power gain, maximum available1)
IC = 60 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz
Gma - 11.5 - dB
Transducer gain
IC = 60 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 1.8 GHz
IC = 60 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 6 GHz
|S21e|2
-
-
18
8
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 60 mA, f = 1.8 GHz,
ZS = ZL = 50
IP3- 29.5 - dBm
1dB Compression point at output
IC = 60 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 1.8 GHz
P-1dB - 16.5 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
(ifleon
2007-04-26
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BFR750L3RH
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
NF = 1.015 -
ISE = 1.54 e-11 mA
NR = 1-
ISC = 1 e-27 mA
IRB = 1 e15 A
RC = 0.9
MJE = 0.085 -
VTF = 2.1 V
CJC = 0.173 pF
XCJC = 0.01 -
VJS = 0.65 V
EG = 1.11
TNOM 25 °C
BF = 753 -
IKF = 292 mA
BR = 76 -
IKR = 1.33 mA
RB = 1
RE = 20 m
VJE = 0.69 V
XTF = 3 -
PTF = 0.5
MJC = 0.31
CJS = 0.325 pF
XTB = -2.2 -
FC = 0.5
KF = 0 -
IS = 2.66 e-12 mA
VAF = 95 V
NE = 1.8 -
VAR = 1.33 V
NC = 2-
RBM = 0.9
CJE = 0.475 pF
TF = 0.0021 ns
ITF = 2540 mA
VJC = 0.45 V
TR = 1.2 ns
MJS = 0.25 -
XTI = 0.436 -
AF = 1 -
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
Lbb_chip = 0.212 nA
Lcc_chip = 0.07472 nH
Lbb_pack = 0.0184 nH
Lcc_pack = 0.277 nH
Lee_pack = 0.239 nH
Cbc_chip = 0.015 pF
Ccb_chip = 0.013 pF
Cce_chip = 0.282 pF
Cbe_pack = 0.064 pF
Cce_pack = 0.0492 pF
Rbc_chip = 7
Ree chi
p
= 0.566
Ccb_chip
Cce_chip
Lcc_chip
Rbc_chip
C
B
E
Lcc_pack
Lbb_pack
Transistor
Model
Ree_chip
Lee_pack
Cbe_pack Cce_pack
Lbb_chip
Cbc_chip
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
Valid up to 6GHz
(ifineon
2007-04-26
5
BFR750L3RH
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 135 150
0
50
100
150
200
250
300
350
400
T
S
[°C]
Ptot [mW]
Permissible Puls Load RthJS = ƒ (tp)
10−8 10−6 10−4 10−2 100
100
101
102
tp [s]
R
thJS
[K/W]
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0
t
p
←→T
D=t
p
/T
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10−8 10−6 10−4 10−2 100
100
101
102
tp [s]
P
totmax
/P
totDC
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
t
p
←→T
D=t
p
/T
Collector-base capacitance Ccb = ƒ (VCB)
f = 1 MHz
0 2 4 6 8 10 12
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
V
CB
[V]
C
cb
[pF]
(ifineon )\\ X A //
2007-04-26
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BFR750L3RH
Transition frequency fT = ƒ(IC)
VCE = parameter, f = 1 GHz
0 10 20 30 40 50 60 70 80
0
5
10
15
20
25
30
35
40
45
I
C
[mA]
f
T
[GHz]
0.50V
0.75V
1.00V
2V to 4V
Power gain Gma, Gms = ƒ (f)
VCE = 3 V, IC = 60 mA
0 1 2 3 4 5 6
0
5
10
15
20
25
30
35
40
f [GHz]
G [dB]
G
ms
|S
21
|
2
Power gain Gma, Gms = ƒ (IC)
VCE = 3 V
f = parameter
0 10 20 30 40 50 60 70 80
8
10
12
14
16
18
20
22
24
26
28
I
C
[mA]
G [dB]
6.00GHz
5.00GHz
4.00GHz
3.00GHz
2.40GHz
1.80GHz
0.90GHz
Power gain Gma, Gms = ƒ (VCE)
IC = 60 mA
f = parameter
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
3
6
9
12
15
18
21
24
27
V
CE
[V]
G [dB]
6.00GHz
5.00GHz
4.00GHz
3.00GHz
2.40GHz
1.80GHz
0.90GHz
(imeon
2007-04-26
7
BFR750L3RH
Package TSLP-3-9
Package Outline
Foot Print
Marking Layout (Example)
2
3
1
Pin 1
Top view Bottom view
21
±0.035
0.5
3
0.575
1)
±0.035
0.4
1)
±0.035
2x
0.25
1)
0.35
±0.035
2x0.15
1)
marking
1) Dimension applies to plated terminal
0.31
-0.02
+0.01
±0.05
±0.05
±0.05
1
0.6
±0.05
Reel ø180 mm = 15.000 Pieces/Reel
Standard Packing
BFR705L3RH
Type code
Pin 1 marking
Laser marking
0.8
4
1.2
0.35
Pin 1
marking
8
For board assembly information please refer to Infineon website "Packages"
Stencil aperturesCopper Solder mask
0.38
0.2
0.315
0.95
0.5
0.17
0.255
0.2
0.45
0.225
1
0.6
0.225
0.15
0.35
0.2
R0.1
R0.19
(ifleon
2007-04-26
8
BFR750L3RH
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.

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