SMP1302-085LF Brief Datasheet by Skyworks Solutions Inc.

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X SKYWOQKS' AKIHIOUGH swwumv /"‘\‘ \H/
The SMP1302-085LF is a surface mountable, low capacitance silicon PIN diode in a low
thermal resistance QFN-2, 2 x 2 mm plastic package. The SMP1302-085LF is designed
as a shunt connected PIN diode for high power, high volume switch and attenuator
applications from 10 MHz to beyond 6 GHz. Maximum resistance at 100 mA is 1.5 W
and maximum capacitance at 30 V is 0.3 pF.
The combination of low junction capacitance, low parasitic inductance, low thermal
resistance and nominal 50 μm I region width, makes these diodes useful in large signal
switches and attenuator applications.
With its 3 W dissipation power rating the SMP1302-085LF is capable of handling more
than 50 W CW and 500 W peak (1 μs pulse, 1% duty cycle), in a shunt connected T-R
switch. The SMP1302 is described in a 41 dBm T-R switch designed at 2 GHz which
operated with low loss, high isolation and low distortion.
Design information for high power switches may be found in the Skyworks Application
Note Design with PIN Diodes.
The 085 package is lead (Pb)-free and fully complies with Skyworks definition of Green:
it meets all current RoHS requirements and contains no antimony (Sb) and no halogens,
such as bromine (Br).
Applications
• Low loss, high power
switches
• Low distortion
attenuators
Features
• Low profile,
ultraminiature 2 x 2 mm
QFN surface mount
package with exposed
paddle
• Low thermal resistance
(40 °C/W)
• Suitable for 50 W CW
T-R switches
• Low capacitance
(0.3 pF)
• Low distortion
performance
• Lead (Pb)-Free, Green™,
fully compliant with
RoHS requirements
• ESD Class 1C, human
body model
SMP1302-085LF: Surface Mount PIN Diode
for High Power Switch Applications
Select products and sample/designer
kits available for purchase online.
www.skyworksinc.com
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Operating Characteristics
T = 25 °C, unless otherwise noted
Parameter Symbol Condition Min. Typ. Max. Unit
Reverse current IRVR = 200 V 10 µA
Capacitance CT30 VR = 30 V, f = 1 MHz 0.3 pF
Resistance RS10 IF = 10 mA, f = 100 MHz 3 W
Resistance RS100 IF = 100 mA, f = 100 MHz 1.0 1.5 W
Forward voltage VFIF = 10 mA 0.8 V
Carrier lifetime TLIF = 10 mA 700 ns
I-Region width W 50 µm
CW thermal resistance QJC 40 °C/W
Pulse thermal resistance QPSingle 1 µs pulse 3.5 °C/W
Series Resistance vs. Current @ 100 MHz
0.01 0.1 1 10 100
Forward Current (mA)
Series Resistance (W)
0.1
1
10
100
1000
0 1 2 5 10 20 10050
Capacitance vs. Reverse Voltage
0
0.2
0.4
0.6
0.1
0.3
0.5
0.7
0.8
Reverse Voltage (V)
Capacitance (pF)
100 MHz
1 MHz
1 GHz
Typical Performance Data @ 25 °C, unless otherwise noted
Typical Pulse Thermal Impedance
0
5
10
15
20
25
30
35
1 10 100 1000
Pulse Width (µs)
Pulse Thermal Impedance (°C/W)
Series Resistance vs. Current @ 100 MHz Capacitance vs. Reverse Voltage
Typical Pulse Thermal Impedance
Absolute Maximum Ratings
Performance is guaranteed only under the conditions listed in the specifications table and is
not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent
damage to the device and will void the warranty.
Characteristic Value
Reverse voltage 200 V
Forward current at 25 °C 1.5 A
CW power dissipation at 25 °C 3 W
1µs pulse power dissipation 30 W
Storage temperature range -65 °C to +200 °C
Operating temperature range -40 °C to +150 °C
High Power Switch Design Application
A T-R switch incorporating SMP1302 PIN diodes covering
2.0155 GHz to 2.0195 GHz has been designed and
tested. The switch operated safely at transmitter power
of 41dBm CW (12.6 W) with low insertion loss (0.42 dB)
and high receiver isolation (37 dB). 1 dB compression
occurred at higher than 50 dBm. In the receive state the
switch performed with 0.45 dB insertion loss and 37.8 dB
transmitter isolation.
The circuit is based on a quarter wave design utilizing two
shunt connected SMP1302 diodes. In the transmit state
the Bias 1 is set at 0 mA and Bias 2 is set at 50 mA; in the
receive state Bias 1 is set at 50 mA and Bias 2 is set at 0 mA.
T-R Switch Performance
Frequency 2010-2025 GHz
Insertion loss (Tx-ANT) 0.42 dB
Insertion loss (ANT-Rx) 0.45 dB
Isolation (Rx-Tx) 37 dB
Isolation (Tx-Rx) 37.8dB
0.1 dB Tx compression 46 dBm (Pulsed)
1.0 dB Tx compression >50 dBm (Pulsed)
Tx-Rx IIP3 >80 dBm
Tx CW input power 41 dBm
Tx Peak input power(2) >49.5 dBm
Rx CW input power 41 dBM
Tx-Rx switching speed(1) <0.85 µs
Tx input return loss 27.8 dB
Rx input return loss 28.8 dB
1. Based on complementary pulsed bias current waveforms under RF conditions.
2. Measured with 8 µs RF pulse width, 0.5% duty cycle, 50 W ANT load.
3. F1 = 2.0155 GHz @ 10 dBm, F2 = 2.0195 GHz @ 10 dBm.
T-R Switch Circuit Diagram
λ/4 λ/4
Bias 1 Bias 2
Antenna Port
Transmitter
Port
Receiver
Port
DC
Block
RF
Bypass
RF
Bypass
DC
Block
DC
Block
DC
Block
SMP1302-085LFSMP1302-085LF
RF
Choke
RF
Choke
S1631
Microstrip Mount
SMP1302-085LF
Thermal Via
Land Pattern
Pin 3
Pin 2
Part Outline
2X 0.27
R0.20
Exposed Soldering
Area Typ.
Pin 1
2X 0.55
2X 0.60
2X 0.85
2X 0.25
0 \% a\ X 9.9 SKYWORKS'
Through our Green Initiative,
we are committed to manufacturing products that comply with global
government directives and industry requirements.
Skyworks is continuously innovating RF, analog and mixed-signal ICs. For the latest product introductions and
information about Skyworks, visit our Web site at www.skyworksinc.com
For additional information on our broad overall product portfolio, please contact your local sales office or email us at
sales@skyworksinc.com.
Green Initiative
Application Notes
For additional information, please refer to the
following Application Notes.
Solder Reflow Information
Discrete Devices and IC Switch/Attenuators Tape
and Reel Package Orientation
Skyworks Solutions, Inc.
20 Sylvan Road, Woburn, MA 01801
USA: (781) 376-3000 • Asia: 886 2 2735 0399 x 990
Europe: 33 (0)1 41443660 • Fax: (781) 376-3100
Email: sales@skyworksinc.com • www.skyworksinc.com
BRO380-10A Printed on Recycled Paper.
Outline Drawing
Note: Dimensions are in millimeters.
2 ± 0.2
2 ± 0.2
Orientation
Indicator
0.88 ± 0.1
Detail B
0.4 ± 0.1
0.27 ± 0.15
3
3 1
2
Exposed Pad
Detail B
0.5 ± 0.15
1.7 ± 0.15
1
2
RF1

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