IRLML0100TRPBF Datasheet by Infineon Technologies

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ntemofionol ISBR Rectifier er Ru»: Ru»:
11/24/09
IRLML0100TRPbF
HEXFET® Power MOSFET
PD - 97157
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
Application(s)
Micro3TM (SOT-23)
IRLML0100TRPbF
D
S
G
3
1
2
Load/ System Switch
Features and Benefits
Features Benefits
Industry-standard pinout Multi-vendor compatibilit
y
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly
MSL1 Increased reliability
VDS 100 V
VGS Max ± 16 V
RDS(on) max
(@VGS = 10V) 220 m
RDS(on) max
(@VGS = 4.5V) 235 m
Absolute Maximum Ratings
Symbol
Parameter
Units
VDS Drain-Source Voltage V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C Maximum Power Dissipation
PD @TA = 70°C Maximum Power Dissipation
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
TJ, TSTG Junction and Storage Temperature Range °C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJA Junction-to-Ambient ––– 100
RθJA Junction-to-Ambient (t<10s) ––– 99
W
°C/W
A
Max.
1.6
1.3
-55 to + 150
± 16
0.01
100
1.3
0.8
7.0
amass A muss/AD 95 NH \ntemofiono‘ 122R Rechfier n uncmn dmde TJ \s
IRLML0100TRPbF
2www.irf.com
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C
––– 190 235
––– 178 220
VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V
IDSS ––– ––– 20
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage –– –– -100
RGInternal Gate Resistance ––– 1.3 ––– Ω
gfs Forward Transconductance 5.7 ––– ––– S
QgTotal Gate Charge ––– 2.5 –––
Qgs Gate-to-Source Charge ––– 0.5 –––
Qgd Gate-to-Drain ("Miller") Charge ––– 1.2 –––
td(on) Turn-On Delay Time ––– 2.2 –––
trRise Time ––– 2.1 ––
td(off) Turn-Off Delay Time –– 9.0 ––
tfFall Time –– 3.6 –––
Ciss Input Capacitance ––– 290 ––
Coss Output Capacitance ––– 27 –––
Crss Reverse Transfer Capacitance ––– 13 –––
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units
ISContinuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 20 30 ns
Qrr Reverse Recovery Charge ––– 13 20 nC
––– –––
––– –––
pF
A
1.1
7.0
VDD =50V
nA
nC
ns
VDS = VGS, ID = 25µA
VDS =100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
RDS(on) VGS = 10V, ID = 1.6A
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current µA
mΩ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 1.3A
MOSFET symbol
showing the
VDS =50V
Conditions
VGS = 4.5V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
RG = 6.8Ω
VGS = 4.5V
di/dt = 100A/µs
VGS = 16V
VGS = -16V
TJ = 25°C, IS = 1.1A, VGS = 0V
integral reverse
p-n junction diode.
VDS = 50V, ID = 1.6A
ID = 1.6A
ID = 1.0A
TJ = 25°C, VR = 50V, IF=1.1A
\mernohonc“ ,RRechfler genus PUL
IRLML0100TRPbF
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Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
ID, Drain-to-Source Current
(A)
TJ = 25°C
TJ = 150°C
VDS = 50V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 1.6A
VGS = 10V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
BOTTOM 2.25V
60µs PULSE WIDTH
Tj = 25°C
2.25V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 150°C
2.25V
VGS
TOP 10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
BOTTOM 2.25V
\ntemofiono‘ 122R Rechfier
IRLML0100TRPbF
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
01234567
QG Total Gate Charge (nC)
0
4
8
12
16
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 1.6A
0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage (V)
0.01
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
TA = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
\mernohonc“ ISERRechfler INGLE PULSE 1 Duty Factor D : m2
IRLML0100TRPbF
www.irf.com 5
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
25 50 75 100 125 150
TA , Ambient Temperature (°C)
0.0
0.5
1.0
1.5
2.0
ID , Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
1000
Thermal Response ( Z
thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
\ntemofiono‘ 122R Rechfier \\ T; —J Fig 14a. Basic Gate Charge Wa
IRLML0100TRPbF
6www.irf.com
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
1K
VCC
DUT
0
L
S
D
G
20K
Vds
Vgs
I
d
Vgs(th)
Qgs1
Qgs2QgdQgodr
2 4 6 8 10
VGS, Gate -to -Source Voltage (V)
150
200
250
300
350
400
450
500
550
600
RDS(on), Drain-to -Source On Resistance (m
Ω)
ID = 1.6A
TJ = 25°C
TJ = 125°C
0 2 4 6 8
ID, Drain Current (A)
170
190
210
230
250
270
RDS(on), Drain-to -Source On Resistance (
mΩ)
Vgs = 10V
Vgs = 4.5V
\mernohonc“ ISERRechfler // J/ /7
IRLML0100TRPbF
www.irf.com 7
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
Fig 16. Typical Power Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
VGS(th), Gate threshold Voltage (V)
ID = 25uA
ID = 250uA
1E-005 0.0001 0.001 0.01 0.1 110
Time (sec)
0
20
40
60
80
100
Power (W)
\ntemofiono‘ IEER Rechfier n.n35 um um n.n35 nma m2 n.n2n n.mn me mm um um mm mm n.n55 mm m n.n75 u \ um \ mm mm n.mn I L in W?» 52 2 at:
IRLML0100TRPbF
8www.irf.com
Micro3 (SOT-23/TO-236AB) Part Marking Information
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
e
E1 E
D
A
B
0.15 [0.006]
e1
12
3
MCBA
5
6
6
5
NOTES:
b
A1 3X
A
A2
ABC
M0.20 [0.008]
0.10 [0.004] C
C
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOE
S
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
0.89 1.12
SYMBOL MAXMIN
A1
b
0.01 0.10
c
0.30 0.50
D
0.08 0.20
E
2.80 3.04
E1
2.10 2.64
e
1.20 1.40
A
0.95 BSC
L0.40 0.60
08
MILLIMETERS
A2 0.88 1.02
e1 1.90 BSC
REF0.54L1
BSC0.25
L2 BSC
REF
INCHES
80
0.0004
MIN MAX
DIMENSIONS
0.972
1.900
Recommended Footprint
0.802 0.950 2.742
3X L
c
L2
H 4 L1
7
F = IRLML6401 A2001 A27
Notes: This part marking information applies to devices produced after 02/26/2001
CODE
LOT
W = WEE K
Y = YEAR
PART NUMBER
E = IRLML6402
PART NUMBER CODE REFERENCE:
D = IRLML5103
C = IRLML6302
B = IRLML2803
A = IRLML2402
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LETTER
Y
82008
32003
12001
YEAR
2002 2
52005
2004 4
2007
2006 7
6
2010 0
2009 9
YEAR Y
C03
WORK
WEEK
01
02 A
W
B
04 D
24
26
25 X
Z
Y
WORK
WEEK W
H = IRLML5203
G = IRLML2502
K
H
G
F
E
D
C
B
2006
2003
2002
2005
2004
2008
2007
2010
2009 J
Y51
29
28
30 C
B
D
50 X
52 Z
Note: A line above the work week
(as shown here) indicates Lead - Free.
I = IRLML0030
J = IRLML2030
L = IRLML0060
M = IRLML0040
K = IRLML0100
N = IRLML2060
\nternotiono‘ 1:23 Rectifier at:
IRLML0100TRPbF
www.irf.com 9
Micro3Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326
)
7.9 ( .312
)
1.32 ( .051
)
1.12 ( .045
)
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
\ntemofiono‘ 122R Rechfier to Inferfloflonol IEER Rectifier
IRLML0100TRPbF
10 www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/2009
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
MS L1
(per IPC/JEDEC J-ST D-020D†††
)
RoHS compliant Yes
Micro3
Qualification information
Moisture Sensitivity Level
Qualification level Cons umer††
(per JEDEC JESD47F ††† guidelines )
Note
Form Quantity
IRLML0100TRPbF Micro3 Tape and Reel 3000
Orderable part number Package Type Standard Pack

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