DMG1013UW Datasheet by Diodes Incorporated

View All Related Products | Download PDF Datasheet
mam. Gmm 5. Q 1%} PA1 DMG1013UW Document number 0531561 Rev 372 1 of 6 www.diodss.cum
DMG1013UW
Document number: DS31861 Rev. 3 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1013UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMG1013UW-7 SOT-323 3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ESD PROTECTED
E
q
uivalent Circuit To
p
View
Top View
Source
Gate
Protection
Diode
Gate
Drai
n
GS
D
PA1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
PA1
YM
Chengdu A/T Site Shanghai A/T Site
e3
DMG1013UW 20's Document number 0531551 Rev 372 www.diodss.cum
DMG1013UW
Document number: DS31861 Rev. 3 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1013UW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±6 V
Continuous Drain Current (Note 5) Steady
State
TA = +25°C
TA = +85°C ID -0.82
-0.54 A
Pulsed Drain Current (Note 6) IDM -6 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 0.31 W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) RθJA 398 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -20 - - V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C IDSS - - -100 nA
VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS - - ±2.0 μA VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
-0.5 - -1.0 V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance RDS (ON) -
0.5
0.7
1.0
0.75
1.05
1.5
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
Forward Transfer Admittance |Yfs| - 0.9 - S
VDS = -10V, ID = -250mA
Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0V, IS = -150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss - 59.76 - pF VDS = -16V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 12.07 - pF
Reverse Transfer Capacitance Crss - 6.36 - pF
Total Gate Charge Q
g
- 622.4 - pC VGS = -4.5V, VDS = -10V,
ID = -250mA
Gate-Source Charge Q
g
s - 100.3 - pC
Gate-Drain Charge Q
g
d - 132.2 - pC
Turn-On Delay Time tD
(
on
)
- 5.1 - ns
VDD = -10V, VGS = -4.5V,
RL = 47, RG = 10,
ID = -200mA
Turn-On Rise Time t
- 8.1 - ns
Turn-Off Delay Time tD
(
off
)
- 28.4 - ns
Turn-Off Fall Time tf - 20.7 - ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
\ ._ ‘ ‘ ,2 m E g / o // a Z z 3 3 E ‘. 1 25C \ \ u / g E a w m r: Z o O m u 0 ac § —/—-/ g 8 - z z E E a n: a: // u 5 / o g / / a: a / /// ac / DMG1013UW 3M6 Documem number D531861 Rev 3 , 2 www.diodes.com
DMG1013UW
Document number: DS31861 Rev. 3 - 2
3 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1013UW
0
0.3
0.6
0.9
1.2
1.5
01 2 345
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
V = -1.2V
GS
V = -1.5V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -4.5V
GS
V = -8.0V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
0
2
4
6
8
10
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0.3 0.6 0.9 1.2 1.5
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
V = -2.5V
GS
V = -4.5V
GS
V = -1.8V
GS
0
0.2
0.4
0.6
0.8
1.0
0 0.3 0.6 0.9 1.2 1.5
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
V = -4.5V
I = -1.0A
GS
D
V = -2.5V
I = -500mA
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE ( )
DSON
V = -4.5V
I = -1.0A
GS
D
V = -2.5V
I = -500mA
GS
D
hzmmmzo omJOm w<§o>n 01$th 20. FZMEKDU w0< t.=""><><>
DMG1013UW
Document number: DS31861 Rev. 3 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1013UW
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.4
0.8
1.2
1.6
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
I = -1mA
D
I = -250µA
D
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
0
2
4
6
8
10
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
1
10
100
0 5 10 15 20
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
C
iss
C
rss
C
oss
f = 1MHz
04 8121620
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
-I , LEAKA
G
E
C
U
R
R
E
N
T
(nA)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.00001 0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
R (t) = r(t) *
JA
R
R = 504°C/W
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
DMG1013UW 50's Document number 0531561 Rev 372 www.diodss.cum
DMG1013UW
Document number: DS31861 Rev. 3 - 2
5 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1013UW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT-323
Dim Min Max Typ
A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D - - 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
J 0.0 0.10 0.05
K 0.90 1.00 0.95
L 0.25 0.40 0.30
M 0.10 0.18 0.11
 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.8
X 0.7
Y 0.9
C 1.9
E 1.0
A
M
JL
D
BC
H
K
G
XE
Y
C
Z
DMG1013UW 60's Document number D531861 Rev 372 www.d‘ (135.com
DMG1013UW
Document number: DS31861 Rev. 3 - 2
6 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1013UW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com

Products related to this Datasheet

MOSFET P-CH 20V 820MA SOT323
MOSFET P-CH 20V 820MA SOT323
MOSFET P-CH 20V 820MA SOT323