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DMP2035U
Document number: DS31830 Rev. 4 - 2
1 of 7
www.diodes.com October 2013
© Diodes Incorporated
DMP2035U
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number
Compliance
Case
DMP2035U-7
Standard
SOT23
DMP2035UQ-7
Automotive
SOT23
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W X Y Z A B C
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Internal Schematic
Top View
D
GS
Source
Gate
Protection
Diode
Gate
Drain
MP3 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
MP3
YM
SOT23
ESD PROTECTED TO 3kV
Chengdu A/T Site
Shanghai A/T Site
MP3
YM
Y
YM
DMP2035U
DMP2035U
Document number: DS31830 Rev. 4 - 2
2 of 7
www.diodes.com October 2013
© Diodes Incorporated
DMP2035U
NEW PRODUCT
Maximum Ratings (@TA
Characteristic
= +25°C, unless otherwise specified.)
Symbol Value Unit
Drain-Source Voltage V-20
DSS V
Gate-Source Voltage VGSS ±8
V
Continuous Drain Current (Note 5) Steady
State
TA
T
= +25°C
AI
= +70°C
-3.6
D -2.9 A
Pulsed Drain Current (Note 6) IDM -24
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P0.81
D W
Thermal Resistance, Junction to Ambient @TAR = +25°C 153.5
θJA °C/W
Operating and Storage Temperature Range TJ, T-55 to +150
STG °C
Electrical Characteristics (@TA
Characteristic
= +25°C, unless otherwise specified.)
Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -20
V VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJI = +25°C
DSS -1.0 μA VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS
±10 μA VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V-0.4
GS(th) -0.7 -1.0 V VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance R
DS(ON)
23
30
41
35
45
62
mΩ
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
Forward Transfer Admittance |Yfs
| 14 S VDS = -5V, ID = -4A
Diode Forward Voltage V
SD -0.7 -1.0 V VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C
iss 1610 pF VDS = -10V, VGS
f = 1.0MHz
= 0V
Output Capacitance Coss
157 pF
Reverse Transfer Capacitance C
rss 145 pF
Gate Resistance R
g 9.45 Ω VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge Qg
15.4 nC VGS = -4.5V, VDS
I
= -10V,
D = -4A
Gate-Source Charge Qgs
2.5 nC
Gate-Drain Charge Qgd
3.3 nC
Turn-On Delay Time t
D(on) 16.8 ns
VDS = -10V, VGS
R
= -4.5V,
L = 10Ω, RG = 6.0Ω, ID = -1A
Turn-On Rise Time tr
12.4 ns
Turn-Off Delay Time t
D(off) 94.1 ns
Turn-Off Fall Time t
f 42.4 ns
Notes: 5. Device mounted on FR-4 PCB with 2 oz. Copper and test pulse width t 10s.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
ms“ "\ I'U n) DMP2035U VD
DMP2035U
Document number: DS31830 Rev. 4 - 2
3 of 7
www.diodes.com October 2013
© Diodes Incorporated
DMP2035U
NEW PRODUCT
0
5
10
15
20
25
00.5 11.5 22.5 33.5 44.5 5
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , DRAIN CURRENT (A)
D
V = -2.0V
GS
V = -3.2V
GS
V = -3.5V
GS
V = -4.5V
GS
V = -3.0V
GS
V = -1.5V
GS
V = -8.0V
GS
V = -2.5V
GS
0
5
10
15
20
0.5 11.5 22.5
Fig. 2 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
-I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 12C
A
T = 150°C
A
V = -5V
DS
0.02
0.03
0.04
0.05
0.06
0.07
0.1 110 100
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = -4.5V
GS
V = -2.5V
GS
V = -1.8V
GS
0.01
0.02
0.03
0.04
0.05
0 4 8 12 16 20
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
on 5U \ \ \ \ \\ \\ // // // 33% ///‘;§ ”4
DMP2035U
Document number: DS31830 Rev. 4 - 2
4 of 7
www.diodes.com October 2013
© Diodes Incorporated
DMP2035U
NEW PRODUCT
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
1.6
V = -4.5V
I = -10A
GS
D
V = -2.5V
I = -5A
GS
D
0.01
0.02
0.03
0.04
0.05
0.06
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
V = -4.5V
I = -10A
GS
D
V = -2.5V
I = -5A
GS
D
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.2
-V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
1.0
I = -250µA
D
I = -1mA
D
0
2
4
6
8
10
12
14
16
18
20
00.3 0.6 0.9 1.2 1.5
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
-I , SOURCE CURRENT (A)
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
100
1,000
10,000
0 2 4 6 8 10 12 14 16 18 20
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
C, CAPACITANCE (pF)
C
iss
C
rss
C
oss
2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , LEAKAGE CURRENT (nA)
DSS
10
100
1,000
10,000
1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
mm) , 50‘0 T. : zs’c Smg‘e Pmss
DMP2035U
Document number: DS31830 Rev. 4 - 2
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© Diodes Incorporated
DMP2035U
NEW PRODUCT
1 2 3 4 5 6 7 8
-V , GATE-SOURCE VOLTAGE (V)
Fig. 11 Gate-Source Leakage Current vs. Voltage
GS
-I , LEAKAGE CURRENT (nA)
GSS
10,000
1,000
100
10
0.1
1
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
1 2 3 4 5 6 7 8
-V , GATE-SOURCE VOLTAGE (V)
Fig. 12 Gate-Source Leakage Current vs. Voltage
GS
-I , LEAKAGE CURRENT (nA)
GSS
10,000
1,000
100
10
0.1
1
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.01 0.1 110 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 13 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I , DRAIN CURRENT (A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
0.00001 0.001 0.01 0.1 110 100 1,000
Fig. 14 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
θ
R (t) = r(t) *
θJA
R
R = 158°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
DMP2035U
Document number: DS31830 Rev. 4 - 2
6 of 7
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© Diodes Incorporated
DMP2035U
NEW PRODUCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.903
1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085
0.18
0.11
α
-
All Dimensions in mm
Dimensions
Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
nn‘nnno:
DMP2035U
Document number: DS31830 Rev. 4 - 2
7 of 7
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© Diodes Incorporated
DMP2035U
NEW PRODUCT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com