APT30GT60BRDQ2(G) Datasheet by Microchip Technology

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ADVANCED — A POWER TECHNOLOGY {’1 \ E»
052-6282 Rev B 6-2008
APT30GT60BRDQ2(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)
Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
Units
Volts
µA
nA
Symbol
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT30GT60BRDQ2(G)
600
±30
64
30
110
110A @ 600V
250
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN TYP MAX
600
3 4 5
1.6 2.0 2.5
2.8
50
1000
±100
600V
APT30GT60BRDQ2
APT30GT60BRDQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
C
E
G
The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed.
• LowForwardVoltageDrop •HighFreq.Switchingto100KHz
• LowTailCurrent •UltraLowLeakageCurrent
• RBSOAandSCSOARated
Thunderbolt IGBT®
TO-247
GCE
O®®® © ©
052-6282 Rev B 6-2008
APT30GT60BRDQ2(G)
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN TYP MAX
.50
.67
5.9
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RθJC
RθJC
WT
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 30A
TJ = 150°C, RG = 10Ω, VGE =
15V, L = 100µH,VCE = 600V
InductiveSwitching(25°C)
VCC = 400V
VGE = 15V
IC = 30A
RG = 10
TJ = +25°C
InductiveSwitching(125°C)
VCC = 400V
VGE = 15V
IC = 30A
RG = 10
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
MIN TYP MAX
1600
150
92
7.5
145
10
60
110
12
20
225
80
525
605
600
12
20
245
100
570
965
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
n 50 »25 n 25 50 75 100125150
052-6282 Rev B 6-2008
APT30GT60BRDQ2(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH), THRESHOLD VOLTAGE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
(NORMALIZED)
I
C, DC COLLECTOR CURRENT(A) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 20
0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160
6 8 10 12 14 16 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
90
80
70
60
50
40
30
20
10
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE1,OutputCharacteristics(TJ =25°C) FIGURE2,OutputCharacteristics(TJ =125°C)
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE3,TransferCharacteristics FIGURE4,GateCharge
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ,JunctionTemperature(°C)
FIGURE5,OnStateVoltagevsGate-to-EmitterVoltage FIGURE6,OnStateVoltagevsJunctionTemperature
TJ,JUNCTIONTEMPERATURE(°C) TC,CASETEMPERATURE(°C)
FIGURE7,ThresholdVoltagevs.JunctionTemperature FIGURE8,DCCollectorCurrentvsCaseTemperature
15 &13V
9V
8V
7V
10V
6V
TJ = 125°C
TJ = 25°C
TJ = -55°C
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE IC = 60A
IC = 30A
IC = 15A
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 60A
IC = 30A
IC = 15A
TJ = 125°C
TJ = 25°C
TJ = -55°C
11V
VCE = 480V
VCE = 300V
VCE = 120V
IC = 30A
TJ = 25°C
VGE = 15V
052-6282 Rev B 6-2008
APT30GT60BRDQ2(G)
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 400V
RG = 10
L = 100µH
SWITCHING ENERGY LOSSES (µJ) EON2, TURN ON ENERGY LOSS (µJ) tr, RISE TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) EOFF, TURN OFF ENERGY LOSS (µJ) tf, FALL TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE9,Turn-OnDelayTimevsCollectorCurrent FIGURE10,Turn-OffDelayTimevsCollectorCurrent
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE11,CurrentRiseTimevsCollectorCurrent FIGURE12,CurrentFallTimevsCollectorCurrent
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE13,Turn-OnEnergyLossvsCollectorCurrent FIGURE14,TurnOffEnergyLossvsCollectorCurrent
RG, GATE RESISTANCE (OHMS) TJ,JUNCTIONTEMPERATURE(°C)
FIGURE15,SwitchingEnergyLossesvs.GateResistance FIGURE16,SwitchingEnergyLossesvsJunctionTemperature
RG = 10, L = 100µH, VCE = 400V
VCE = 400V
TJ = 25°C, or 125°C
RG = 10
L = 100µH
16
14
12
10
8
6
4
2
0
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
0
4500
4000
3500
3000
1500
1000
500
0
300
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
2000
1500
1000
500
0
3000
2500
2000
1500
1000
500
0
VGE = 15V
TJ = 125°C, VGE = 15V
TJ = 25 or 125°C,VGE = 15V TJ = 25°C, VGE = 15V
VCE = 400V
VGE = +15V
RG = 10
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
0 10 20 30 40 50 0 25 50 75 100 125
RG = 10, L = 100µH, VCE = 400V
VCE = 400V
VGE = +15V
RG = 10
TJ = 125°C
TJ = 25°C
VCE = 400V
VGE = +15V
RG = 10
TJ = 125°C
TJ = 25°C
Eon2,60A
Eoff,60A
VCE = 400V
VGE = +15V
TJ = 125°C
Eon2,30A
Eoff,30A
Eon2,15A
Eoff,15A
Eon2,60A
Eoff,60A
Eon2,30A
Eoff,30A
Eon2,15A
Eoff,15A
052-6282 Rev B 6-2008
APT30GT60BRDQ2(G)
TYPICAL PERFORMANCE CURVES
0.60
0.50
0.40
0.30
0.20
0.10
0
ZθJC, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure19a,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
10-5 10-4 10-3 10-2 10-1 1.0
3,000
1,000
500
100
50
10
120
100
80
60
40
20
0
C, CAPACITANCE (PF)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure17,Capacitancevs Collector-To-EmitterVoltage Figure18,MinimimSwitchingSafeOperatingArea
0 10 20 30 40 50 0 100 200 300 400 500 600 700
FIGURE19b,TRANSIENTTHERMALIMPEDANCEMODEL
5 15 25 35 45 55 65
FMAX, OPERATING FREQUENCY (kHz)
IC, COLLECTOR CURRENT (A)
Figure20,OperatingFrequencyvsCollectorCurrent
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 10
140
50
10
5
1
Cres
0.5
0.1
0.05
Fmax = min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
Pdiss - Pcond
Eon2 + Eoff
fmax2 =
Pdiss = TJ - TC
RθJC
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
Coes
Cies
0.0838
0.207
0.209
0.00245
0.00548
0.165
Power
(watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
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052-6282 Rev B 6-2008
APT30GT60BRDQ2(G)
APT40DQ60
I
C
A
D.U.T.
V
CE
Figure21,InductiveSwitchingTestCircuit
V
CC
Figure22,Turn-onSwitchingWaveformsandDefinitions
Figure23,Turn-offSwitchingWaveformsandDefinitions
TJ = 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
td(on)
90%
10%
tr
5%
TJ = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
td(off)
10%
tf
90%
052-6282 Rev B 6-2008
APT30GT60BRDQ2(G)
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (TC = 111°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Symbol
IF(AV)
IF(RMS)
IFSM
Symbol
VF
Characteristic / Test Conditions
IF = 30A
Forward Voltage IF = 60A
IF = 30A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN TYP MAX
1.85
2.24
1.48
APT30GT60BRDQ2(G)
40
63
320
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN TYP MAX
- 22
- 25
- 35
- 3 -
- 160
- 480
- 6 -
- 85
- 920
- 20
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
trr
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
IF = 40A, diF/dt = -200A/µs
VR = 400V, TC = 25°C
IF = 40A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
IF = 40A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE24a.MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvs.PULSEDURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
0.289
0.381
0.00448
0.120
Power
(watts)
RC MODEL
Junction
temp (°C)
Case temperature (°C)
D = 0.9
‘\
052-6282 Rev B 6-2008
APT30GT60BRDQ2(G)
TJ
= 125°C
VR = 400V
20A
40A
80A
180
160
140
120
100
80
60
40
20
0
25
20
15
10
5
0
Duty cycle = 0.5
TJ
= 175°C
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
80
70
60
50
40
30
20
10
0
C
J, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/µs)
I
F(AV) (A)
T
J, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure29.DynamicParametersvs.JunctionTemperature Figure30.MaximumAverageForwardCurrentvs.CaseTemperature
VR, REVERSE VOLTAGE (V)
Figure31.JunctionCapacitancevs.ReverseVoltage
Q
rr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT
(nC) (A)
I
RRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME
(A) (ns)
TJ = 175°C
TJ = -55°C
TJ = 25°C
TJ = 125°C
TJ
= 125°C
VR = 400V
80A
20A
40A
0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
120
100
80
60
40
20
0
1400
1200
1000
800
600
400
200
0
TJ
= 125°C
VR = 400V
80A
40A
20A
trr
Qrr
Qrr
trr
IRRM
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
180
160
140
120
100
80
60
40
20
0
V
F, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/µs)
Figure25.ForwardCurrentvs.ForwardVoltage Figure26.ReverseRecoveryTimevs.CurrentRateofChange
-diF/dt, CURRENT RATE OF CHANGE (A/µs) -diF/dt, CURRENT RATE OF CHANGE (A/µs)
 Figure27.ReverseRecoveryChargevs.CurrentRateofChange Figure28.ReverseRecoveryCurrentvs.CurrentRateofChange
V OQRO +
052-6282 Rev B 6-2008
APT30GT60BRDQ2(G)
TYPICAL PERFORMANCE CURVES
4
3
1
2
5
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure32.DiodeTestCircuit
Figure33,DiodeReverseRecoveryWaveformandDefinitions
0.25IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30µH
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
TO-247PackageOutline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
APT6017LLL

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