APT25GT120BR(G) Datasheet by Microchip Technology

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ADVANCED — A POWER TECHNOLOGY {’1 \ E»
052-6268 Rev D 6-2008
APT25GT120BR(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.5mA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
Units
Volts
µA
nA
Symbol
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT25GT120BR(G)
1200
±30
54
25
75
75A @ 1200V
347
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
G
C
E
MIN TYP MAX
1200
4.5 5.5 6.5
2.7 3.2 3.7
3.9
100
TBD
120
1200V
APT25GT120BR
APT25GT120BRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed.
• LowForwardVoltageDrop •HighFreq.Switchingto50KHz
• LowTailCurrent •UltraLowLeakageCurrent
• RBSOAandSCSOARated
Thunderbolt IGBT®
TO-247
GCE
O®©® © ©
052-6268 Rev D 6-2008
APT25GT120BR(G)
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN TYP MAX
.36
N/A
5.9
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RθJC
RθJC
WT
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 25A
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 1200V
InductiveSwitching(25°C)
VCC = 800V
VGE = 15V
IC = 25A
RG = 5
TJ = +25°C
InductiveSwitching(125°C)
VCC = 800V
VGE = 15V
IC = 25A
RG = 5
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
MIN TYP MAX
1650
250
110
10.0
170
20
100
75
14
27
150
36
930
1860
720
14
27
175
45
925
3265
965
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
052-6268 Rev D 6-2008
APT25GT120BR(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH), THRESHOLD VOLTAGE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
(NORMALIZED)
I
C, DC COLLECTOR CURRENT(A) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)
IC = 25A
TJ = 25°C
250µs PULSE
TEST<0.5 % DUTY
CYCLE
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0 2 4 6 8 0 5 10 15 20
0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 160 180 200
6 8 10 12 14 16 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
0
TJ = 125°C
TJ = 25°C
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
TJ = 125°C
TJ = 25°C
VGE = 15V
VCE = 960V
VCE = 600V
VCE = 240V
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE1,OutputCharacteristics(TJ =25°C) FIGURE2,OutputCharacteristics(TJ =125°C)
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE3,TransferCharacteristics FIGURE4,GateCharge
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ,JunctionTemperature(°C)
FIGURE5,OnStateVoltagevsGate-to-EmitterVoltage FIGURE6,OnStateVoltagevsJunctionTemperature
TJ,JUNCTIONTEMPERATURE(°C) TC,CASETEMPERATURE(°C)
FIGURE7,ThresholdVoltagevs.JunctionTemperature FIGURE8,DCCollectorCurrentvsCaseTemperature
IC = 12.5A
IC = 25A
IC = 50A
IC = 12.5A
IC = 25A
IC = 50A
TJ = -55°C
13V
11V
10V
9V
12V
8V
7V
15V
TJ = -55°C
052-6268 Rev D 6-2008
APT25GT120BR(G)
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 800V
RG = 5
L = 100µH
SWITCHING ENERGY LOSSES (µJ) EON2, TURN ON ENERGY LOSS (µJ) tr, RISE TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) EOFF, TURN OFF ENERGY LOSS (µJ) tf, FALL TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE9,Turn-OnDelayTimevsCollectorCurrent FIGURE10,Turn-OffDelayTimevsCollectorCurrent
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE11,CurrentRiseTimevsCollectorCurrent FIGURE12,CurrentFallTimevsCollectorCurrent
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE13,Turn-OnEnergyLossvsCollectorCurrent FIGURE14,TurnOffEnergyLossvsCollectorCurrent
RG, GATE RESISTANCE (OHMS) TJ,JUNCTIONTEMPERATURE(°C)
FIGURE15,SwitchingEnergyLossesvs.GateResistance FIGURE16,SwitchingEnergyLossesvsJunctionTemperature
VCE = 800V
VGE = +15V
RG = 5
VCE = 800V
TJ = 25°C, or 125°C
RG = 5
L = 100µH
30
25
20
15
10
5
0
70
60
50
40
30
20
10
0
10,000
8,000
6,000
4,000
2,000
0
18,000
16,000
14,000
12,000
10,000
8,000
6,000
4,000
2,000
0
200
180
160
140
120
100
80
60
40
20
0
50
45
40
35
30
25
20
15
10
5
0
2500
2000
1500
1000
500
0
9,000
8,000
7,000
6,000
5,000
4,000
3,000
2,000
1,000
0
VGE = 15V
VCE = 800V
VGE = +15V
RG = 5
VCE = 800V
VGE = +15V
RG = 5
10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55
0 10 20 30 40 50 0 25 50 75 100 125
RG = 5, L = 100µH, VCE = 800V
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
RG = 5, L = 100µH, VCE = 800V
TJ = 25 or 125°C,VGE = 15V
TJ = 125°C, VGE = 15V
TJ = 25°C, VGE = 15V
Eon2,50A
Eoff,50A
Eon2,25A
Eoff,25A
Eon2,12.5A
Eoff,12.5A
VCE = 800V
VGE = +15V
TJ = 125°C
Eon2,50A
Eoff,50A
Eon2,25A
Eoff,25A
Eon2,12.5A
Eoff,12.5A
052-6268 Rev D 6-2008
APT25GT120BR(G)
TYPICAL PERFORMANCE CURVES
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
ZθJC, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure19a,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
10-5 10-4 10-3 10-2 10-1 1.0
3,000
1,000
500
100
50
10
80
70
60
50
40
30
20
10
0
C, CAPACITANCE (PF)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure17,Capacitancevs Collector-To-EmitterVoltage Figure18,MinimimSwitchingSafeOperatingArea
0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5 10 15 20 25 30 35 40 45 50
FMAX, OPERATING FREQUENCY (kHz)
IC, COLLECTOR CURRENT (A)
Figure20,OperatingFrequencyvsCollectorCurrent
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 800V
RG = 5
140
50
10
5
1
0.5
0.1
0.05
Fmax = min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
Pdiss - Pcond
Eon2 + Eoff
fmax2 =
Pdiss = TJ - TC
RθJC
Coes
Cres
Cies
0.178
0.182
0.0101
0.136
Power
(watts)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
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052-6268 Rev D 6-2008
APT25GT120BR(G)
Figure22,Turn-onSwitchingWaveformsandDefinitions
Figure23,Turn-offSwitchingWaveformsandDefinitions
TJ = 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
td(on)
90%
10%
tr
5%
TJ = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
td(off)
10%
tf
90%
I
C
A
D.U.T.
V
CE
Figure21,InductiveSwitchingTestCircuit
V
CC
APT40DQ120
TO-247PackageOutline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69
.185
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
ollector
Collecto
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.

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