— VISHAYm V ® Ru H 5 mummy mums" FREE mm SIQGnAEDs-TI >GE3 (Lead IPnHvee and HaIugen4ree) THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS SET FORTH AT www.mshaycam/dacmmm
Vishay Siliconix
Si2304BDS
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
•100 % R
g Te s ted
Compliant to RoHS Directive 2002/95/EC
Notes:
a. Surface mounted on FR4 board, t 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
PRODUCT SUMMARY
VDS (V) RDS(on) ()I
D (A) Qg (Typ.)
30 0.070 at VGS = 10 V 3.2 2.6
0.105 at VGS = 4.5 V 2.6
Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free)
Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
* Marking Code
Si2304BDS (L4)*
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C ID
3.2 2.6
A
TA = 70 °C 2.5 2.1
Pulsed Drain Current IDM 10
Continuous Source Current (Diode Conduction)a, b IS0.9 0.62
Maximum Power Dissipationa, b TA = 25 °C PD
1.08 0.75 W
TA = 70 °C 0.69 0.48
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat 5 s RthJA
90 115
°C/W
Steady State 130 166
Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75
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2
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
Vishay Siliconix
Si2304BDS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test: PW 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions
Limits
Unit
Min. Typ. Max.
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 30 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 3
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 30 V, VGS = 0 V 0.5
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 10
VDS = 30 V, VGS = 1 V, TJ = 25 °C 1
On-State Drain CurrentaID(on) V
DS 4.5 V, VGS = 10 V 6A
Drain-Source On-ResistanceaRDS(on)
VGS = 10 V, ID = 2.5 A 0.055 0.070
VGS = 4.5 V, ID = 2 A 0.080 0.105
Forward Transconductanceagfs VDS = 4.5 V, ID = 2.5 A 6S
Diode Forward Voltage VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 V
Dynamic
Gate Charge QgVDS = 15 V, VGS = 5 V, ID = 2.5 A 2.6 4
nC
Total Gate Charge Qgt
VDS = 15 V, VGS = 10 V, ID = 2.5 A
4.6 7
Gate-Source Charge Qgs 0.8
Gate-Drain Charge Qgd 1.15
Gate Resistance Rgf = 1 MHz 0.6 3 6
Input Capacitance Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
225
pFOutput Capacitance Coss 50
Reverse Transfer Capacitance Crss 28
Switching
Turn - O n D e l ay Tim e td(on)
VDD = 15 V, RL = 15
ID 1 A, VGEN = 10 V, Rg = 6
7.5 12
ns
Rise Time tr12.5 20
Turn-Off Delay Time td(off) 19 30
Fall Time tf15 25
Output Characteristics
0
2
4
6
8
10
0246810
VGS = 10 thru 5 V
VDS
- Drain-to-Source Voltage (V)
- Drain Current (A)ID
4 V
3 V
Transfer Characteristics
0
2
4
6
8
10
012345
TC = 125 °C
- 55 °C
25 °C
VGS
- Gate-to-Source Voltage (V)
- Drain Current (A)ID
— VISHAYN V On ResIsIanceL Onfleslsfance (m THE PRODUCTS DESCRIEED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS SET FORTH AT www.mshaycom/docmmoo
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
www.vishay.com
3
Vishay Siliconix
Si2304BDS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
-RDS(on)
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0246810
ID - Drain Current (A)
VGS = 4.5 V
VGS = 10 V
0
2
4
6
8
10
012345
V
DS
= 15 V
I
D
= 2.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 150 °C
TJ = 25 °C
10
0.001
VSD
- Source-to-Drain Voltage (V)
- Source Current (A)IS
0.01
0.1
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
50
100
150
200
250
300
350
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 2.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance (Normalized)
0.00
0.04
0.08
0.12
0.16
0.20
0246810
I
D
= 2.5 A
-R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
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4
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
Vishay Siliconix
Si2304BDS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72503.
Threshold Voltage
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
Single Pulse Power
0
10
2
4
Power (W)
Time (s)
1 60010
6
0.10.01 100
TA = 25 °C
Single Pulse
8
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
T
A
= 25 °C
Single Pulse
- Drain Current (A)I
D
0.1
R
DS(on)*
Limited by
BV
DSS
Limited
I
DM
Limited
1 ms
10 ms
100 ms
DC, 100 s, 10 s, 1 s
10 µs
100 µs
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is
specified
>
Normalized Thermal Transient Impedance, Junction-to-Ambient
— VISHAYm V
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
VISHAY ‘5 H u 0394 o 037 ‘ u ass
AN807
Vishay Siliconix
Document Number: 70739
26-Nov-03
www.vishay.com
1
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
ambient air. This pattern uses all the available area underneath the
body for this purpose.
FIGURE 1. Footprint With Copper Spreading
0.114
2.9
0.059
1.5
0.0394
1.0
0.037
0.95
0.150
3.8
0.081
2.05
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
— VISHAY.. RECOMMENDED MINIMUM PADS FOR SOT-23 I o 022 (n 559) mos (2 692) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} Docq'vve'n Number 72609 Rewswon 217.1;1'1708
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
Return to Index
Return to Index
— VISHAY. V
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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