IXT(K,X)40P50P Datasheet by IXYS

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IXYS
© 2015 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C - 500 V
VDGR TJ= 25C to 150C, RGS = 1M- 500 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C - 40 A
IDM TC= 25C, Pulse Width Limited by TJM - 120 A
IATC= 25C - 40 A
EAS TC= 25C 3.5 J
dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns
PDTC= 25C 890 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Force (PLUS247) 20..120/4.5..27 N/lb
Mounting Torque (TO-264) 1.13/10 Nm/lb.in
Weight PLUS247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250A - 500 V
VGS(th) VDS = VGS, ID = -1mA - 2.0 - 4.5 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V - 50A
TJ = 125C - 250A
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 230 m
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTK40P50P
IXTX40P50P
VDSS = - 500V
ID25 = - 40A
RDS(on)
230m
Features
International Standard Packages
Rugged PolarPTM Process
Avalanche Rated
Fast Intrinsic Diode
Low Package Inductance
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS99935D(6/15)
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXTX)
Tab
G
DS
TO-264 (IXTK)
S
G
D
Tab
IXYS
IXTK40P50P
IXTX40P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 23 38 S
Ciss 11.5 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 1150 pF
Crss 93 pF
td(on) 37 ns
tr 59 ns
td(off) 90 ns
tf 34 ns
Qg(on) 205 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 nC
Qgd 75 nC
RthJC 0.14C/W
RthCS 0.15 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 40 A
ISM Repetitive, Pulse Width Limited by TJM -160 A
VSD IF = - 20A, VGS = 0V, Note 1 - 3.0 V
trr 477 ns
QRM 14.5 C
IRM - 61 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
IF = - 20A, -di/dt = -150A/s
VR = -100V, VGS = 0V
Terminals: 1 - Gate
2 - Drain
3 - Source
PLUS247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
35 30 25 ea In A Ampeves 22 20 WNW W 20 / 8 6V Eta 2" 5,512 :‘2 03 75V M 72 4 73 u: 42 71A ‘5 45 50 VD5 - vans 18 <5><4 rds‘cn‘="" a="" nmmahzed=""><2 10="" as="" ©="" 2015="" ixvs="" corpoha‘hon‘="" ah="" ngms="" reserved="">
© 2015 IXYS CORPORATION, All Rights Reserved
IXTK40P50P
IXTX40P50P
Fig. 1. Output Characteristics @ T
J
= 25ºC
-40
-35
-30
-25
-20
-15
-10
-5
0
-9-8-7-6-5-4-3-2-10
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 5
V
- 6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-30-25-20-15-10-50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 5
V
- 6
V
- 7
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
-40
-35
-30
-25
-20
-15
-10
-5
0
-18-16-14-12-10-8-6-4-20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 6V
- 5V
Fig. 4. R
DS(on)
Normalized to I
D
= - 20A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= - 40A
I
D
= - 20A
Fig. 5. R
DS(on)
Normalized to I
D
= - 20A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-90-80-70-60-50-40-30-20-100
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
AO’C , / / a, E 7 4m: 7 3 3 6 - Ea , a >° 3 2n 5 ‘ 50 g A x- urtzs‘c w TJVZS’C 3 2 2a ‘ a u mi 40 45 720 725 730 7:5 740 a VSD-Vaus fimuau 1’ B i 4. man ,7 , , 8 mm 1 Cm m m n 75 m ‘5 20 725 ran 735 ran 10 \IDS-Vohs IXVS Reserves the ngm to Change Llrmts‘ Test Commons, and Dxmensxons.
IXTK40P50P
IXTX40P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
-70
-60
-50
-40
-30
-20
-10
0
-6.5-6.0-5.5-5.0-4.5-4.0-3.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
-70-60-50-40-30-20-100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-140
-120
-100
-80
-60
-40
-20
0
-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 250V
I
D
= - 20A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
-
---
-100ms
-
© 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_40P50P(B9) 03-06-08-A
IXTK40P50P
IXTX40P50P
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS A Lillelluse Tecnnumgy
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