T835T-8I Datasheet by STMicroelectronics

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November 2017
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This is information on a product in full production.
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T835T-8I
8 A Snubberless™ Triac
Datasheet - production data
Features
High static dV/dt
High dynamic commutation
150 °C maximum Tj
Three quadrants
Built-in ceramic for tab insulation
Compliance to UL1557 standard (ref :
E81734)
ECOPACK®2 compliant component
Complies with UL94,V0
Surge capability VDSM, VRSM = 900 V
Benefits
Device is less likely to have false turn-on
thanks to high dV/dt
Better turn-off in high temperature
environments thanks to (dI/dt)c
Increase of thermal margin due to extended
working Tj up to 150 °C
Better thermal resistance due to the ceramic
inside the package
Applications
General purpose AC line load switching
Motor control circuits
Home appliances
Heating
Lighting
Inrush current limiting circuits
Overvoltage crowbar protection
Description
Available in through-hole package, the T835T-8I
Triac can be used for the on/off or phase angle
control function in general purpose AC switching
where high commutation capability is required.
This device can be used without a snubber RC
circuit when the limits defined are respected.
TO-220AB insulated provides tab insulation,
UL1557 certified, rated at 2.5 kV RMS and
UL-94, V0 resin compliance.
Package environmentally friendly ECOPACK®2
graded (RoHS and Halogen Free compliance).
Snubberless™ is a trademark of STMicroelectronics.
Figure 1: Functional diagram
Table 1: Device summary
Symbol
Value
IT(RMS)
8
A
VDRM/VRRM
800
V
VDSM/VRSM
900
V
IGT
35
mA
A1
A2
GTO220AB insulated
A2
A1
G
A2: Anode2
A1: Anode1
G : Gate
Characteristics
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1 Characteristics
Table 2: Absolute maximum ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine wave)
Tc = 118 °C
8
A
ITSM
Non repetitive surge peak on-state current,
Tj initial = 25 °C
tp = 16.7 ms
63
A
tp = 20 ms
60
I2t
I2t value for fusing, tp = 10 ms
Tj initial = 25 °C
24
A2s
dl/dt
Critical rate of rise of on-state
current, IG = 2 x IGT, tr ≤ 100 ns
Tj = 150 °C
f = 100 Hz
100
A/µs
VDRM/VRRM
Repetitive peak off-state voltage
Tj = 150 °C
600
V
Tj = 125 °C
800
V
VDSM/VRSM
Non Repetitive peak off-state voltage
tp = 10 ms
900
V
IGM
Peak gate current
tp = 20 µs
Tj = 150 °C
4
A
PG(AV)
Average gate power dissipation
Tj = 150 °C
1
W
Tstg
Storage junction temperature range
-40 to +150
°C
Tj
Operating junction temperature range
-40 to +150
°C
TL
Maximum lead temperature for soldering during 10 s
260
°C
Vins
Insulation RMS voltage, 1 minute, UL1557 certified (E81734)
2.5
kV
Table 3: Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test Conditions
Value
Unit
IGT(1)
VD = 12 V, RL = 30 Ω
I - II - III
Min.
1.75
mA
VD = 12 V, RL = 30 Ω
I - II - III
Max.
35
mA
VGT
VD = 12 V, RL = 30 Ω
I - II - III
Max.
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ, Tj = 150 °C
I - II - III
Min.
0.2
V
IL
IG = 1.2 x IGT
I - III
Max.
60
mA
II
Max.
70
mA
IH
IT = 500 mA, gate open
Max.
40
mA
dV/dt
VD = 536 V, gate open
Tj = 125 °C
Min.
2000
V/µs
VD = 402 V, gate open
Tj = 150 °C
1000
V/µs
(dl/dt)c
Without snubber, (dV/dt)c > 20 V/µs
Tj = 125 °C
Min.
8
A/ms
Tj = 150 °C
4
A/ms
Notes:
(1)For both polarities of A2 referenced to A1.
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Characteristics
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Table 4: Static characteristics
Symbol
Test conditions
Tj
Value
Unit
VTM(1)
IT = 11.3 A, tp = 380 µs
25 °C
Max.
1.60
V
VTO
Threshold on-state voltage
150 °C
Max.
0.87
V
RD
Dynamic resistance
150 °C
Max.
80
IDRM/IRRM
VDRM = VRRM = 800 V
25 °C
Max.
5
µA
125°C
1.0
mA
VDRM = VRRM = 600 V
150 °C
Max.
2.5
mA
Notes:
(1)For both polarities of A2 referenced to A1.
Table 5: Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
Max.
2.8
°C/W
Rth(j-a)
Junction to ambient
Typ.
60
1 0903
Characteristics
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1.1 Characteristics (curves)
Figure 2: Maximum power dissipation versus on-
state RMS current
Figure 3: On-state RMS current versus case
temperature
Figure 4: On-state RMS current versus ambient
temperature (free air convection)
Figure 5: Relative variation of thermal impedance
versus pulse duration
0
2
4
6
8
10
12
0 1 2 3 4 5 6 7 8
P(W)
IT(RMS)(A)
α= 180°
180°
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150
IT(RMS)(A)
Tc(°C)
α= 180°
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
IT(RMS)(A)
Ta(°C)
α= 180°
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
K = [Zth/Rth]
tp(s)
Zth(j-c)
Zth(j-a)
‘25 125
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Characteristics
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Figure 6: Relative variation of gate trigger voltage
and current versus junction temperature
(typical values)
Figure 7: Relative variation of holding current and
latching current versus junction temperature
(typical values)
Figure 8: Surge peak on-state current versus
number of cycles
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
Figure 10: On-state characteristics
(maximum values)
Figure 11: Relative variation of critical rate of
decrease of main current versus junction
temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
IGT,VGT[Tj] / IGT,VGT[Tj= 25 °C]
Tj(°C)
IGT Q3
VGT Q1-Q2-Q3
IGT Q1-Q2
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125
IH,IL[Tj] / IH,IL[Tj= 25 °C]
Tj(°C) IH
IL
0
10
20
30
40
50
60
70
1 10 100 1000
ITSM(A)
Number of cycles
Repetitive
Tc= 118°C
Non repetitive
Tjinitial = 25 °C
t=20ms
O ne c yc le
10
100
1000
0.01 0.10 1.00 10.00
ITSM(A)
t (ms)
p
T initial=25°C
j
ITSM
dI/dt limitation:
100A/µs
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ITM(A)
VTM(V)
Tjmax.
Vto = 0.87 V
Rd= 80 mΩ
Tj= 150 °C
Tj= 25 °C
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
25 50 75 100 125 150
(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]
Tj(°C)
Characteristics
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Figure 12: Relative variation of static dV/dt
immunity versus junction temperature
Figure 13: Relative variation of leakage current
versus junction temperature for different values of
blocking voltage
0
1
2
3
4
5
6
25 50 75 100 125 150
dV/dt [Tj] / dV/dt [Tj = 150 °C]
Tj(°C)
VD= VR= 402 V
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,VDRM/VRRM]*
Tj(°C)
VDRM = VRRM = 800 V
VDRM = VRRM = 600 V
*[Tjmax = 125 °C; VDRM, VRRM = 800 V]
[Tjmax = 150 °C; VDRM, VRRM = 600 V]
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T835T-8I
Package information
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2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
ECOPACK®2 (Lead-free plating and Halogen free package compliance)
Lead-free package leads finishing
Halogen-free molding compound resin meets UL94 standard level V0.
Recommended torque (for through-hole package): 0.4 to 0.6 N·m
2.1 TO-220AB Insulated package information
Figure 14: TO-220AB Insulated package outline
Package information
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Table 6: TO-220AB Insulated package mechanical data
Ref.
Dimensions
Millimeters
Inches(1)
Min.
Typ.
Max.
Min.
Typ.
Max.
A
15.20
15.90
0.5984
0.6260
a1
3.75
0.1476
a2
13.00
14.00
0.5118
0.5512
B
10.00
10.40
0.3937
0.4094
b1
0.61
0.88
0.0240
0.0346
b2
1.23
1.32
0.0484
0.0520
C
4.40
4.60
0.1732
0.1811
c1
0.49
0.70
0.0193
0.0276
c2
2.40
2.72
0.0945
0.1071
e
2.40
2.70
0.0945
0.1063
F
6.20
6.60
0.2441
0.2598
I
3.73
3.88
0.1469
0.1528
L
2.65
2.95
0.1043
0.1161
I2
1.14
1.70
0.0449
0.0669
I3
1.14
1.70
0.0449
0.0669
I4
15.80
16.40
16.80
0.6220
0.6457
0.6614
M
2.6
0.1024
Notes:
(1)Inch dimensions are for reference only.
E] Sefles RMS current Packaqe
T835T-8I
Ordering information
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3 Ordering information
Figure 15: Ordering information scheme
Table 7: Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
T835T-8I
T835T-8I
TO-220AB insulated
2.3 g
50
Tube
4 Revision history
Table 8: Document revision history
Date
Revision
Changes
17-Oct-2017
1
Initial release.
06-Nov-2017
2
Updated Table 4: "Static characteristics".
T 8 35 T - 8 I
Series
T = Triac
RMS current
8 = 8 A
IGT current
35 = 35 mA
Package
I = TO-220AB insulated tab
Specific application
T = increased (dl/dt) and dV/dt producing reduced ITSM
Voltage
8 = 800 V
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