IRF7855PbF Datasheet by Infineon Technologies

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05/17/06
IRF7855PbF
HEXFET® Power MOSFET
Applications
lPrimary Side Switch in Bridge Topology
in Isolated DC-DC Converters
lPrimary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
Converters
lSecondary Side Synchronous
Rectification Switch for 15Vout
lSuitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
Benefits
lLow Gate to Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
Notes through are on page 8
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
Absolute Maximum Ratings
Parameter Units
VDS Drain-to-Source Voltage V
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
dv/dt Peak Diode Recover
y
dv/dt V/ns
TJ Operating Junction and °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20 °C/W
RθJA Junction-to-Ambient
(
P
C
B Mount
)
––– 50
9.9
-55 to + 150
0.02
2.5
Max.
12
8.7
97
60
± 20
VDSS RDS(on) max ID
60V 9.4m:@VGS = 10V 12A
PD - 97173A
Parameter Parameter Min. Typ. Max. Units Min. Typ. Max. Units inle'na‘ono IEZR RCCTiTie’ Conditions Conditions lngie Pulse Avalanche EnergyU Avalanche Current (9 ’O’< parameter="" bod="" dlode="" bod="" dlode="" g)="" min.="" typ.="" max.="" units="" conditions="" n="" unctlon="" dlode.="">
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S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V
V(BR)DSS
/
TJ Breakdown Voltage Temp. Coefficient ––– 72 ––– mV/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 7.4 9.4 m
VGS(th) Gate Threshold Voltage 3.0 ––– 4.9 V
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
gfs Forward Transconductance 14 ––– ––– S
QgTotal Gate Charge ––– 26 39
Qgs Gate-to-Source Charge ––– 6.8 ––– nC
Qgd Gate-to-Drain ("Miller") Charge ––– 9.6 –––
td(on) Turn-On Delay Time ––– 8.7 –––
trRise Time ––– 13 –––
td(off) Turn-Off Delay Time ––– 16 ––– ns
tfFall Time ––– 12 –––
Ciss Input Capacitance ––– 1560 –––
Coss Output Capacitance ––– 440 –––
Crss Reverse Transfer Capacitance ––– 120 ––– pF
Coss Output Capacitance ––– 1910 –––
Coss Output Capacitance ––– 320 –––
Coss eff. Effective Output Capacitance ––– 520 –––
Avalanche Characteristics
Parameter Units
EAS
Si
ng
l
e
P
u
l
se
A
va
l
anc
h
e
E
nergy mJ
IAR
A
va
l
anc
h
e
C
urrent A
Diode Characteristics
Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 2.3
(Body Diode) A
ISM Pulsed Source Current ––– ––– 97
(Bod
y
Diode)
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 33 50 ns
Qrr Reverse Recovery Charge ––– 38 57 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typ.
–––
–––
Conditions
VDS = 25V, ID = 7.2A
ID = 7.2A
VDS = 30V
Conditions
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
540
7.2
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 7.2A, VGS = 0V
TJ = 25°C, IF = 7.2A, VDD = 25V
di/dt = 100A/µs
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A
VDS = VGS, ID = 100µA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Max.
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
VGS = 10V
VDD = 30V
ID = 7.2A
RG = 6.2
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IRF7855PbF
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
vs. Temperature
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
4.5V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
3 4 5 6 7 8
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 15V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 12A
VGS = 10V
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Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
TA = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
0 5 10 15 20 25 30
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 7.2A
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IRF7855PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 9. Maximum Drain Current vs.
Ambient Temperature
25 50 75 100 125 150
TA , Ambient Temperature (°C)
0
2
4
6
8
10
12
ID, Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100 1000
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
100
Thermal Response ( Z thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W) τi (sec)
6.734 0.027848
27.268 1.3813
16.003 53
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci= τi/Ri
Ci= τi/Ri
τA
τA
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IRF7855PbF
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Fig 13. On-Resistance vs. Gate Voltage
Fig 12. On-Resistance vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
1K
VCC
DUT
0
L
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
45678910 11 12 13 14 15 16
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
25
30
RDS(on), Drain-to -Source On Resistance (m)
ID = 7.2A
TJ = 25°C
TJ = 125°C
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
400
800
1200
1600
2000
2400
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 0.41A
0.58A
BOTTOM 7.2A
10 20 30 40 50 60 70 80 90 100
ID, Drain Current (A)
4
6
8
10
12
14
16
RDS(on), Drain-to -Source On Resistance (m)
TJ = 25°C
TJ = 125°C
Vgs = 10V
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IRF7855PbF
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SO-8 Package Details
SO-8 Part Marking
Internationd IQR Rectifier International lean Rectifier
IRF7855PbF
8www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 21mH,
RG = 25, IAS = 7.2A.
When mounted on 1 inch square copper
board, t 10 sec.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Pulse width 400µs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ISD 7.2A, di/dt 650A/µs, VDD V(BR)DSS, TJ 150°C.
Rθ is measured at TJ of approximately 90°C.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/06
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

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