XTR112, XTR114 Datasheet by Texas Instruments

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BURR - BROWN ,4?» Uncarreded RTD Nnnhneanty
1
®
XTR112, XTR114
RTD
XTR112
XTR114
4-20 mA
V
PS
V
O
R
L
R
G
V
LIN
V
REG
+7.5V to 36V
I
R
I
R
XTR112: I
R
= 250µA
XTR114: I
R
= 100µA
XTR112
XTR114
4-20mA CURRENT TRANSMITTERS
with Sensor Excitation and Linearization
®
FEATURES
LOW UNADJUSTED ERROR
PRECISION CURRENT SOURCES
XTR112: Two 250µA
XTR114: Two 100µA
RTD OR BRIDGE EXCITATION
LINEARIZATION
TWO OR THREE-WIRE RTD OPERATION
LOW OFFSET DRIFT: 0.4µV/°C
LOW OUTPUT CURRENT NOISE: 30nAp-p
HIGH PSR: 110dB min
HIGH CMR: 86dB min
WIDE SUPPLY RANGE: 7.5V TO 36V
SO-14 SOIC PACKAGE
APPLICATIONS
INDUSTRIAL PROCESS CONTROL
FACTORY AUTOMATION
SCADA REMOTE DATA ACQUISITION
REMOTE TEMPERATURE AND PRESSURE
TRANSDUCERS
DESCRIPTION
The XTR112 and XTR114 are monolithic 4-20mA,
two-wire current transmitters. They provide complete
current excitation for high impedance platinum RTD
temperature sensors and bridges, instrumentation am-
plifier, and current output circuitry on a single inte-
grated circuit. The XTR112 has two 250µA current
sources while the XTR114 has two 100µA sources for
RTD excitation.
Versatile linearization circuitry provides a 2nd-order
correction to the RTD, typically achieving a 40:1
improvement in linearity.
Instrumentation amplifier gain can be configured for a
wide range of temperature or pressure measurements.
Total unadjusted error of the complete current trans-
mitter is low enough to permit use without adjustment
in many applications. This includes zero output cur-
rent drift, span drift and nonlinearity. The XTR112
and XTR114 operate on loop power supply voltages
down to 7.5V.
Both are available in an SO-14 surface-mount pack-
age and are specified for the –40°C to +85°C indus-
trial temperature range.
©1998 Burr-Brown Corporation PDS-1473A Printed in U.S.A. December, 1998
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111
Twx: 910-952-1111 • Internet: http://www.burr-brown.com/ • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
–200°C
Pt1000 NONLINEARITY CORRECTION
USING XTR112 and XTR114
Process Temperature (°C)
+850°C
5
4
3
2
1
0
–1
Uncorrected
RTD Nonlinearity
Corrected
Nonlinearity
Nonlinearity (%)
XTR112
XTR114
SBOS101
sum: anow~
2
®
XTR112, XTR114
SPECIFICATIONS
At TA = +25°C, V+ = 24V, and TIP29C external transistor, unless otherwise noted.
XTR112U XTR112UA
XTR114U XTR114UA
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
OUTPUT
Output Current Equation A
Output Current, Specified Range 4 20 ✻✻mA
Over-Scale Limit 24 27 30 ✻✻mA
Under-Scale Limit: XTR112 IREG = 0 0.9 1.3 1.7 ✻✻mA
XTR114 0.6 1 1.4 ✻✻mA
ZERO OUTPUT(1) VIN = 0V, RG = 4mA
Initial Error ±5±25 ±50 µA
vs Temperature ±0.07 ±0.5 ±0.9 µA/°C
vs Supply Voltage, V+ V+ = 7.5V to 36V 0.04 0.2 ✻✻ µA/V
vs Common-Mode Voltage
VCM = 1.25V to 3.5V(2) 0.02 µA/V
vs VREG Output Current 0.3 µA/mA
Noise: 0.1Hz to 10Hz 0.03 µAp-p
SPAN
Span Equation (transconductance)
S = 40/R
G
A/V
Initial Error (3) Full Scale (VIN) = 50mV ±0.05 ±0.2 ±0.4 %
vs Temperature(3) ±3±25 ✻✻ ppm/°C
Nonlinearity: Ideal Input(4) Full Scale (VIN) = 50mV 0.003 0.01 ✻✻ %
INPUT(5)
Offset Voltage VCM = 2V ±50 ±100 ±250 µV
vs Temperature ±0.4 ±1.5 ±3µV/°C
vs Supply Voltage, V+ V+ = 7.5V to 36V ±0.3 ±3✻✻ µV/V
vs Common-Mode Voltage, VCM = 1.25V to 3.5V(2) ±10 ±50 ±100 µV/V
RTI (CMRR)
Common-Mode Input Range(2) 1.25 3.5 ✻✻V
Input Bias Current 525 50 nA
vs Temperature 20 pA/°C
Input Offset Current ±0.2 ±3±10 nA
vs Temperature 5pA/°C
Impedance: Differential 0.1 || 1 G|| pF
Common-Mode 5 || 10 G|| pF
Noise: 0.1Hz to 10Hz 0.6 µVp-p
CURRENT SOURCES VO = 2V(6)
Current: XTR112 250 µA
XTR114 100 µA
Accuracy ±0.05 ±0.2 ±0.4 %
vs Temperature ±15 ±35 ±75 ppm/°C
vs Power Supply, V+ V+ = 7.5V to 36V ±10 ±25 ✻✻ ppm/V
Matching ±0.02 ±0.1 ±0.2 %
vs Temperature ±3±15 ±30 ppm/°C
vs Power Supply, V+ V+ = 7.5V to 36V 1 10 ✻✻ ppm/V
Compliance Voltage, Positive (V+) –3
(V+) –2.5
✻✻ V
Negative(2) 0 –0.2 ✻✻ V
Output Impedance: XTR112 500 M
XTR114 1.2 G
Noise: 0.1Hz to 10Hz: XTR112 0.001 µAp-p
XTR114 0.0004 µAp-p
VREG(2) 5.1 V
Accuracy ±0.02 ±0.1 ✻✻ V
vs Temperature ±0.2 mV/°C
vs Supply Voltage, V+ 1 mV/V
Output Current: XTR112 –1, +2.1 mA
XTR114 –1, +2.4 mA
Output Impedance 75
LINEARIZATION
RLIN (internal) 1k
Accuracy ±0.2 ±0.5 ±1%
vs Temperature ±25 ±100 ✻✻ ppm/°C
POWER SUPPLY
Specified Voltage +24 V
Operating Voltage Range +7.5 +36 ✻✻V
TEMPERATURE RANGE
Specification, TMIN to TMAX –40 +85 ✻✻°C
Operating/Storage Range –55 +125 ✻✻°C
Thermal Resistance,
θ
JA
SO-14 Surface-Mount 100 °C/W
IO = VIN • (40/RG) + 4mA, VIN in Volts, RG in
Specification same as XTR112U, XTR114U.
NOTES: (1) Describes accuracy of the 4mA low-scale offset current. Does not include input amplifier effects. Can be trimmed to zero. (2) Voltage measured with
respect to IRET pin. (3) Does not include initial error or TCR of gain-setting resistor, RG. (4) Increasing the full-scale input range improves nonlinearity. (5) Does not
include Zero Output initial error. (6) Current source output voltage with respect to IRET pin.
\ K m 3333333 U KCKCKCK 0M aunn , anowu
3
®
XTR112, XTR114
Power Supply, V+ (referenced to IO pin) .......................................... 40V
Input Voltage, VIN, VIN (referenced to IO pin) ............................ 0V to V+
Storage Temperature Range ....................................... –55°C to +125°C
Lead Temperature (soldering, 10s) .............................................. +300°C
Output Current Limit ............................................................... Continuous
Junction Temperature ................................................................... +165°C
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability.
ABSOLUTE MAXIMUM RATINGS(1)
Top View SO-14
PIN CONFIGURATION
+
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use
of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits
described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
PACKAGE SPECIFIED
CURRENT DRAWING TEMPERATURE ORDERING TRANSPORT
PRODUCT SOURCES PACKAGE NUMBER(1) RANGE NUMBER(2) MEDIA
XTR112U 2 x 250µA SO-14 Surface Mount 235 –40°C to +85°C XTR112U Rails
" " " " " XTR112U/2K5 Tape and Reel
XTR112UA 2 x 250µA SO-14 Surface Mount 235 –40°C to +85°C XTR112UA Rails
" " " " " XTR112UA/2K5 Tape and Reel
XTR114U 2 x 100µA SO-14 Surface Mount 235 –40°C to +85°C XTR114U Rails
" " " " " XTR114U/2K5 Tape and Reel
XTR114UA 2 x 100µA SO-14 Surface Mount 235 –40°C to +85°C XTR114UA Rails
" " " " " XTR114UA/2K5 Tape and Reel
NOTES: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. (2) Models with a slash (/) are
available only in Tape and Reel in the quantities indicated (e.g., /2K5 indicates 2500 devices per reel). Ordering 2500 pieces of “XTR112UA/2K5” will get a single
2500-piece Tape and Reel. For detailed Tape and Reel mechanical information, refer to Appendix B of Burr-Brown IC Data Book.
PACKAGE/ORDERING INFORMATION
I
R1
V
IN
R
G
R
G
NC
I
RET
I
O
I
R2
V
IN
V
LIN
V
REG
V+
B (Base)
E (Emitter)
NC = No Connection
XTR112 and XTR114
1
2
3
4
5
6
7
14
13
12
11
10
9
8
–+
mm , 3mm
4
®
XTR112, XTR114
FUNCTIONAL BLOCK DIAGRAM
975
6
I = 100µA +
100µA
IR1 IR2
25
V+
Q1
9
B
10
11
4
13
2
3
8
E
VIN
RG
IO = 4mA + VIN 40
RG
( )
5.1V
RG
RLIN
1k
VIN
+
VIN
IRET
7
VREG
XTR112: IR1 = IR2 = 250µA
XTR114: IR1 = IR2 = 100µA
14
1
12 IR2
IR1
VLIN
R6 = 125:; aunn , anowu
5
®
XTR112, XTR114
TYPICAL PERFORMANCE CURVES
At TA = +25°C, and V+ = 24V, unless otherwise noted.
20mA
STEP RESPONSE
25µs/div
4mA/div
RG = 125
RG = 2k
4mA
10 100 1k 10k 100k
Frequency (Hz)
1M
110
100
90
80
70
60
50
40
30
20
Common-Mode Rejection Ratio (dB)
COMMON-MODE REJECTION RATIO vs FREQUENCY
R
G
= 2k
R
G
= 125
100 1k 10k 100k
Frequency (Hz)
TRANSCONDUCTANCE vs FREQUENCY
1M
50
40
30
20
10
0
Transconductance (20 Log mA/V)
RG = 125
RG = 500
RG = 2k
–75 –50 –25 0 25 50 75 100
Temperature (°C)
OVER-SCALE CURRENT vs TEMPERATURE
125
29
28
27
26
25
24
23
Over-Scale Current (mA)
V+ = 7.5V
V+ = 36V
V+ = 24V
With External Transistor
–75 –50 –25 0 25 50 75 100
Temperature (°C)
UNDER-SCALE CURRENT vs TEMPERATURE
125
1.45
1.4
1.35
1.3
1.25
1.2
1.15
1.1
1.05
1
0.95
Under-Scale Current (mA)
XTR114
XTR112
10 100 1k 10k 100k
Frequency (Hz)
POWER-SUPPLY REJECTION RATIO vs FREQUENCY
1M
140
120
100
80
60
40
20
0
Power Supply Rejection Ratio (dB)
R
G
= 2k
R
G
= 125
meIA sum: , snow»;
6
®
XTR112, XTR114
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25°C, and V+ = 24V, unless otherwise noted.
1 10 100 1k 10k
Frequency (Hz)
INPUT VOLTAGE AND CURRENT
NOISE DENSITY vs FREQUENCY
100k
10k
1k
100
10
Input Voltage Noise (nV/Hz)
10k
1k
100
10
Input Current Noise (fA/Hz)
Current Noise
Voltage Noise
–75 –50 –25 0 25 50 75 100
Temperature (°C)
INPUT BIAS AND OFFSET CURRENT
vs TEMPERATURE
125
25
20
15
10
5
0
Input Bias and Offset Current (nA)
+I
B
I
OS
–I
B
–75 –50 –25 0 25 50 75 100
Temperature (°C)
ZERO OUTPUT CURRENT ERROR
vs TEMPERATURE
125
4
2
0
–2
–4
–6
–8
–10
–12
Zero Output Current Error (µA)
1 10 100 1k 10k
Frequency (Hz)
ZERO OUTPUT AND REFERENCE
CURRENT NOISE vs FREQUENCY
100k
10k
1k
100
10
Noise (pA/Hz)
Reference Current
XTR114
XTR112
Zero Output Current
Input Offset Voltage Drift (µV/°C)
INPUT OFFSET VOLTAGE DRIFT
PRODUCTION DISTRIBUTION
80
70
60
50
40
30
20
10
0
Percent of Units (%)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
Typical production distribution
of packaged units. XTR112 and
XTR114 included.
Zero Output Drift (µA/°C)
ZERO OUTPUT DRIFT
PRODUCTION DISTRIBUTION
40
35
30
25
20
15
10
5
0
Percent of Units (%)
0
0.025
0.05
0.075
0.1
0.125
0.15
0.175
0.2
0.225
0.25
0.275
0.3
0.325
0.35
0.375
0.4
0.425
0.45
0.475
0.5
Typical production distribution
of packaged units. XTR112
and XTR114 included.
// swarm
7
®
XTR112, XTR114
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25°C, and V+ = 24V, unless otherwise noted.
Temperature (°C)
REFERENCE CURRENT ERROR
vs TEMPERATURE
+0.05
0
–0.05
–0.10
–0.15
–0.20
Reference Current Error (%)
–75 –50 –25 0 25 50 75 100 125
Typical production distribution
of packaged units.
XTR112 and XTR114 included.
Current Source Drift (ppm/°C)
CURRENT SOURCE DRIFT
PRODUCTION DISTRIBUTION
40
35
30
25
20
15
10
5
0
Percent of Units (%)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
Typical production distribution
of packaged units. XTR112 and
XTR114 included.
Current Source Matching Drift (ppm/°C)
CURRENT SOURCE MATCHING
DRIFT PRODUCTION DISTRIBUTION
90
80
70
60
50
40
30
20
10
0
Percent of Units (%)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
–1 –0.5 0 0.5 1 2.521.5
V
REG
Output Current (mA)
XTR114 V
REG
OUTPUT VOLTAGE
vs V
REG
OUTPUT CURRENT
3
5.35
5.30
5.25
5.20
5.15
5.10
5.05
5.00
V
REG
Output Voltage (V)
NOTE: Above 2.4mA,
zero output degrades
25°C
125°C
–55°C
8
®
XTR112, XTR114
APPLICATION INFORMATION
Figure 1 shows the basic connection diagram for the XTR112
and XTR114. The loop power supply, VPS, provides power
for all circuitry. Output loop current is measured as a voltage
across the series load resistor, RL.
Two matched current sources drive the RTD and zero-
setting resistor, RZ. These current sources are 250µA for the
XTR112 and 100µA for the XTR114. Their instrumentation
amplifier input measures the voltage difference between the
RTD and RZ. The value of RZ is chosen to be equal to the
resistance of the RTD at the low-scale (minimum) measure-
ment temperature. RZ can be adjusted to achieve 4mA output
at the minimum measurement temperature to correct for
input offset voltage and reference current mismatch of the
XTR112 and XTR114.
RCM provides an additional voltage drop to bias the inputs of
the XTR112 and XTR114 within their common-mode input
range. RCM should be bypassed with a 0.01µF capacitor to
minimize common-mode noise. Resistor RG sets the gain of
the instrumentation amplifier according to the desired tem-
perature range. RLIN1 provides second-order linearization
correction to the RTD, typically achieving a 40:1 improve-
ment in linearity. An additional resistor is required for three-
wire RTD connections, see Figure 3.
The transfer function through the complete instrumentation
amplifier and voltage-to-current converter is:
IO = 4mA + VIN • (40/RG)
(VIN in volts, RG in ohms)
where VIN is the differential input voltage. As evident from
the transfer function, if RG is not used the gain is zero and
the output is simply the XTR’s zero current. The value of RG
varies slightly for two-wire RTD and three-wire RTD con-
nections with linearization. RG can be calculated from the
equations given in Figure 1 (two-wire RTD connection) and
Table I (three-wire RTD connection).
The IRET pin is the return path for all current from the current
sources and VREG. The IRET pin allows any current used in
external circuitry to be sensed by the XTR112 and XTR114
and to be included in the output current without causing an
error.
The VREG pin provides an on-chip voltage source of approxi-
mately 5.1V and is suitable for powering external input
circuitry (refer to Figure 6). It is a moderately accurate
voltage reference—it is not the same reference used to set
the precision current references. VREG is capable of sourcing
approximately 2.1mA of current for the XTR112 and 2.4mA
for the XTR114. Exceeding these values may affect the 4mA
zero output. Both products can sink approximately 1mA.
FIGURE 1. Basic Two-Wire RTD Temperature Measurement Circuit with Linearization.
14 11
12
13
4
3
2
R
G
XTR112
XTR114
R
CM
7
1
0.01µF
I = 4mA + V
IN
• ( )
O
40
R
G
R
Z
RTD 6
(2)
NOTES: (1) R
Z
= RTD resistance at minimum measured temperature.
R
G
R
G
V
IN
V
IN
+
V
LIN
I
R1
I
R2
V
REG
V+
I
RET
I
O
E
B
(1)
R
G
= 2.5 • I
REF
[R
1
(R
2
+ R
Z
) – 2(R
2
R
Z
)]
R
2
– R
1
(2)
R
LIN1
=
where R
1
= RTD Resistance at (T
MIN
+ T
MAX
)/2
R
2
= RTD Resistance at T
MAX
R
LIN
= 1k (Internal)
I
REF
= 0.25 for XTR112
I
REF
= 0.1 for XTR114
0.4 • R
LIN
(R
2
– R
1
)
I
REF
(2R
1
– R
2
– R
Z
)
(3)
V
PS
8
4-20 mA
I
O
0.01µF
I
R1
I
R2
7.5V to 36V
+
9
10
R
LIN1(3)
R
L
V
O
Q
1
TYPE
2N4922
TIP29C
TIP31C
PACKAGE
TO-225
TO-220
TO-220
Possible choices for Q
1
(see text).
XTR112: I
R1
= I
R2
= 250µA, R
CM
= 3.3k
XTR114: I
R1
= I
R2
= 100µA, R
CM
= 8.2k
9
®
XTR112, XTR114
range from 7.5V to 36V. The loop supply voltage, VPS, will
differ from the applied voltage according to the voltage drop
on the current sensing resistor, RL (plus any other voltage
drop in the line).
If a low loop supply voltage is used, RL (including the loop
wiring resistance) must be made a relatively low value to
assure that V+ remains 7.5V or greater for the maximum
loop current of 20mA:
It is recommended to design for V+ equal or greater than
7.5V with loop currents up to 30mA to allow for out-of-
range input conditions.
The low operating voltage (7.5V) of the XTR112 and
XTR114 allow operation directly from personal computer
power supplies (12V ±5%). When used with the RCV420
Current Loop Receiver (Figure 7), load resistor voltage drop
is limited to 3V.
ADJUSTING INITIAL ERRORS
Many applications require adjustment of initial errors. Input
offset and reference current mismatch errors can be cor-
rected by adjustment of the zero resistor, RZ. Adjusting the
gain-setting resistor, RG, corrects any errors associated with
gain.
TWO-WIRE AND THREE-WIRE RTD
CONNECTIONS
In Figure 1, the RTD can be located remotely simply by
extending the two connections to the RTD. With this remote
two-wire connection to the RTD, line resistance will intro-
duce error. This error can be partially corrected by adjusting
the values of RZ, RG, and RLIN1.
A better method for remotely located RTDs is the three-wire
RTD connection shown in Figure 3. This circuit offers
improved accuracy. RZ’s current is routed through a third
wire to the RTD. Assuming line resistance is equal in RTD
lines 1 and 2, this produces a small common-mode voltage
which is rejected by the XTR112 and XTR114. A second
resistor, RLIN2, is required for linearization.
Note that although the two-wire and three-wire RTD con-
nection circuits are very similar, the gain-setting resistor,
RG, has slightly different equations:
Two-wire:
Three-wire:
where RZ = RTD resistance at TMIN
R1 = RTD resistance at (TMIN + TMAX)/2
R2 = RTD resistance at TMAX
IREF = 0.25 for XTR112
IREF = 0.1 for XTR114
A negative input voltage, VIN, will cause the output current
to be less than 4mA. Increasingly negative VIN will cause the
output current to limit at approximately 1.3mA for the
XTR112 and 1mA for the XTR114. Refer to the typical
curve “Under-Scale Current vs Temperature.”
Increasingly positive input voltage (greater than the full-
scale input) will produce increasing output current according
to the transfer function, up to the output current limit of
approximately 27mA. Refer to the typical curve “Over-
Scale Current vs Temperature.”
EXTERNAL TRANSISTOR
Transistor Q1 conducts the majority of the signal-dependent
4-20mA loop current. Using an external transistor isolates
the majority of the power dissipation from the precision
input and reference circuitry of the XTR112 and XTR114,
maintaining excellent accuracy.
Since the external transistor is inside a feedback loop its
characteristics are not critical. Requirements are: VCEO =
45V min,
β
= 40 min and PD = 800mW. Power dissipation
requirements may be lower if the loop power supply voltage
is less than 36V. Some possible choices for Q1 are listed in
Figure 1.
The XTR112 and XTR114 can be operated without this
external transistor, however, accuracy will be somewhat
degraded due to the internal power dissipation. Operation
without Q1 is not recommended for extended temperature
ranges. A resistor (R = 3.3k) connected between the IRET
pin and the E (emitter) pin may be needed for operation
below 0°C without Q1 to guarantee the full 20mA full-scale
output, especially with V+ near 7.5V.
LOOP POWER SUPPLY
The voltage applied to the XTR112 and XTR114, V+, is
measured with respect to the IO connection, pin 7. V+ can
FIGURE 2. Operation Without External Transistor.
8
XTR112
XTR114 0.01µF
E
I
O
I
RET
V+
10
7
6
R
Q
= 3.3k
For operation without external
transistor, connect a 3.3k
resistor between pin 6 and
pin 8. See text for discussion
of performance.
R
L
max =(V+)–7.5V
20mA
–R
WIRING
RIRRR RR
RR
GREF Z Z
=•+
[]
25 2
12 2
21
.()()
RIRRRR
RR
GREF Z Z
=25
21
21
.()()
sum: anow~
10
®
XTR112, XTR114
R2 = RTD resistance at maximum measured temperature, TMAX
where RZ = RTD resistance at the minimum measured temperature, TMIN
RLIN = 1k (internal)
XTR112 RESISTOR EXAMPLE:
The measurement range is –100°C to +200°C for a 3-wire Pt100 RTD connection. Determine the values for RS, RG, RLIN1, and RLIN2. Look up the values
from the chart or calculate the values according to the equations provided.
METHOD 1: TABLE LOOK UP
TMIN = –100°C and T = 300°C (TMAX = +200°C),
Using Table II the 1% values are:
RZ = 604RLIN1 = 33.2k
RG = 750RLIN2 = 59k
METHOD 2: CALCULATION
Step 1: Determine RZ, R1, and R2.
RZ is the RTD resistance at the minimum measured temperature, TMIN = –100°C.
Using Equation (1) at right gives RZ = 602.5 (1% value is 604).
R2 is the RTD resistance at the maximum measured temperature, TMAX = 200°C.
Using Equation (2) at right gives R2 = 1758.4.
R1 is the RTD resistance at the midpoint measured temperature,
TMID = (TMIN + TMAX)/2 = (–100 + 200)/2 = 50°C. R1 is NOT the average of RZ and R2.
Using Equation (2) at right gives R1 = 1194.
Step 2: Calculate RG, RLIN1, and RLIN2 using equations above.
RG = 757 (1% value is 750)
RLIN1 = 33.322k (1% value is 33.2k)
RLIN2 = 58.548k (1% value is 59k)
Calculation of Pt1000 Resistance Values
(according to DIN IEC 751)
Equation (1) Temperature range from –200°C to 0°C:
R(T) = 1000 [1 + 3.90802 • 10–3 • T – 0.5802 • 10–6 • T2
– 4.27350 • 10–12 • (T – 100) • T3]
Equation (2) Temperature range from 0°C to +850°C:
R(T) = 1000 (1 + 3.90802 • 10–3 • T – 0.5802 • 10–6 • T2)
where: R(T) is the resistance in at temperature T.
T is the temperature in °C.
TABLE I. Summary of Resistor Equations for Two-Wire and Three-Wire Pt1000 RTD Connections.
Table I summarizes the resistor equations for two-wire and
three-wire RTD connections. An example calculation is also
provided. To maintain good accuracy, at least 1% (or better)
resistors should be used for RG. Table II provides standard
1% RG values for a three-wire Pt1000 RTD connection with
linearization for the XTR112. Table III gives RG values for
the XTR114.
LINEARIZATION
RTD temperature sensors are inherently (but predictably)
nonlinear. With the addition of one or two external resistors,
RLIN1 and RLIN2, it is possible to compensate for most of this
nonlinearity resulting in 40:1 improvement in linearity over
the uncompensated output.
General Equations
NOTE: Most RTD manufacturers provide reference tables for
resistance values at various temperatures.
Resistor values for other RTD types (such as Pt2000) can be
calculated using the XTR resistor selection program in the
Applications Section on Burr-Brown’s web site (www.burr-
brown.com)
IREF • 2.5 [R1 (R2 + RZ) – 2 (R2RZ)]
(R2 – R1)
=0.4 • RLIN (R2 – R1)
IREF • (2R1 – R2 – RZ)
=IREF • 2.5 (R2 – RZ) (R1 – RZ)]
(R2 – R1)
=0.4 • RLIN (R2 – R1)
IREF • (2R1 – R2 – RZ)
=0.4 • (RLIN + RG)(R2 – R1)
IREF • (2R1 – R2 – RZ)
=
XTR112 (IREF = 0.25)
(see Table II)
RGRLIN1 RGRLIN1 RLIN2
THREE-WIRE
TWO-WIRE
0.625 • [R1 (R2 + RZ) – 2 (R2RZ)]
(R2 – R1)
=1.6 • RLIN (R2 – R1)
(2R1 – R2 – RZ)
=0.625 • (R2 – RZ) (R1 – RZ)]
(R2 – R1)
=1.6 • RLIN (R2 – R1)
(2R1 – R2 – RZ)
=1.6 • (RLIN + RG)(R2 – R1)
(2R1 – R2 – RZ)
=
0.25 • [R1 (R2 + RZ) – 2 (R2RZ)]
(R2 – R1)
=4 • RLIN (R2 – R1)
(2R1 – R2 – RZ)
=0.25 • (R2 – RZ) (R1 – RZ)]
(R2 – R1)
=4 • RLIN (R2 – R1)
(2R1 – R2 – RZ)
=4 • (RLIN + RG)(R2 – R1)
(2R1 – R2 – RZ)
=
XTR114 (IREF = 0.1)
(see Table III)
R1 = RTD resistance at the midpoint measured temperature, TMID = (TMIN + TMAX)/2
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XTR112, XTR114
NOTE: The values listed in the table are 1% resistors (in ).
Exact values may be calculated from the following equations:
RZ = RTD resistance at minimum measured temperature, TMIN.
TMIN 100
°
C 200
°
C 300
°
C 400
°
C 500
°
C 600
°
C 700
°
C 800
°
C 900
°
C 1000
°
C
–200°C 187/267 187/536 187/806 187/1050 187/1330 187/1580 187/1820 187/2100 187/2370 187/2670
48700 31600 25500 21500 17800 15000 13000 11300 9760 8660
61900 48700 46400 44200 41200 39200 36500 34800 33200 31600
–100°C 604/255 604/499 604/4750 604/1000 604/1270 604/1500 604/1780 604/2050 604/2260
86600 49900 33200 24900 19600 15800 13300 11500 10000
110000 75000 59000 49900 44200 40200 37400 34800 32400
0°C 1000/243 1000/487 1000/732 1000/976 1000/1210 1000/1470 1000/1740 1000/1960
105000 51100 33200 24300 19100 15400 13000 11000
130000 76800 57600 48700 42200 38300 35700 33200
100°C 1370/237 1370/475 1370/715 1370/953 1370/1180 1370/1430 1370/1690
102000 49900 32400 23700 18700 15000 12400
127000 73200 56200 46400 40200 36500 33200
200°C 1740/232 1740/464 1740/698 1740/931 1740/1150 1740/1400
100000 48700 31600 23200 17800 14300
121000 69800 53600 44200 38300 34800
300°C 2100/221 2100/442 2100/665 2100/887 2100/1130
95300 46400 30100 22100 17400
118000 68100 51100 42200 36500
400°C 2490/215 2490/432 2490/649 2490/866
93100 45300 29400 21500
113000 64900 48700 40200
500°C 2800/210 2800/412 2800/619
887000 43200 28000
107000 61900 45300
600°C 3160/200 3160/402
86600 42200
102000 59000
700°C 3480/191
82500
100000
800°C 3740/187
80600
95300
RLIN1
RLIN2
NOTE: The values listed in the table are 1% resistors (in ).
Exact values may be calculated from the following equations:
RZ = RTD resistance at minimum measured temperature, TMIN.
MEASUREMENT TEMPERATURE SPAN T (°C)
RZ/RG
R2 = RTD resistance at TMAX
where R1 = RTD resistance at the midpoint measured temperature, (TMIN + TMAX)/2
RLIN = 1k (Internal)
TABLE II. XTR112 R
Z
, R
G
, R
LIN1
, and R
LIN2
Standard 1% Resistor Values for Three-Wire Pt1000 RTD Connection with Linearization.
RRRR
RR R
LIN LIN
Z
121
12
16
2
=.()
(–)
RRRRR
RR R
LIN LIN G
Z
221
12
16
2
=•+.( )()
(–)
RRRRR
RR
GZZ
=0 625
21
21
.()()
(–)
XTR112 1% RESISTOR VALUES FOR A THREE-WIRE RTD CONNECTION
TMIN 100
°
C 200
°
C 300
°
C 400
°
C 500
°
C 600
°
C 700
°
C 800
°
C 900
°
C 1000
°
C
–200°C 187/107 187/215 187/316 187/422 187/523 187/634 187/732 187/845 187/953 187/1050
121000 78700 64900 53600 45300 38300 32400 28000 24900 21500
133000 95300 84500 76800 68100 68100 56200 52300 47500 45300
–100°C 604/102 604/200 604/301 604/402 604/511 604/604 604/715 604/806 604/909
221000 124000 84500 61900 48700 40200 33200 28700 24900
243000 150000 110000 86600 73200 63400 57600 52300 47500
0°C 1000/97.6 1000/196 1000/294 1000/392 1000/487 1000/590 1000/681 1000/787
261000 130000 84500 61900 47500 39200 32400 27400
287000 154000 107000 84500 71500 61900 54900 49900
100°C 1370/95.3 1370/191 1370/287 1370/383 1370/475 1370/576 1370/665
255000 124000 80600 59000 46400 37400 31600
280000 147000 105000 82500 68100 59000 52300
200°C 1740/90.9 1740/182 1740/274 1740/365 1740/464 1740/549
249000 121000 78700 57600 44200 36500
267000 143000 100000 78700 64900 56200
300°C 2100/88.9 2100/178 2100/267 2100/357 2100/348
237000 118000 75000 54900 43200
261000 137000 95300 75000 61900
400°C 2490/86.6 2490/174 2490/261 2490/249
232000 113000 73200 53600
249000 133000 93100 71500
500°C 2800/82.5 2800/165 2800/49
221000 110000 69800
243000 127000 88700
600°C 3160/80.6 3160/162
215000 105000
215000 121000
700°C 3480/76.8
205000
221000
800°C 3740/75
200000
215000
MEASUREMENT TEMPERATURE SPAN T (°C)
RZ/RG
RLIN1
RLIN2
R2 = RTD resistance at TMAX
where R1 = RTD resistance at the midpoint measured temperature, (TMIN + TMAX)/2
RLIN = 1k (Internal)
TABLE III. XTR114 R
Z
, R
G
, R
LIN1
, and R
LIN2
Standard 1% Resistor Values for Three-Wire Pt1000 RTD Connection with Linearization.
XTR114 1% RESISTOR VALUES FOR A THREE-WIRE RTD CONNECTION
RRRRR
RR
GZZ
=025 21
21
.()()
(–)
RRRR
RR R
LIN LIN
Z
121
12
4
2
=(–)
(–)
RRRRR
RR R
LIN LIN G
Z
221
12
4
2
=•+()()
(–)
12
®
XTR112, XTR114
A typical two-wire RTD application with linearization is
shown in Figure 1. Resistor RLIN1 provides positive feed-
back and controls linearity correction. RLIN1 is chosen ac-
cording to the desired temperature range. An equation is
given in Figure 1.
In three-wire RTD connections, an additional resistor, RLIN2,
is required. As with the two-wire RTD application, RLIN1
provides positive feedback for linearization. RLIN2 provides
an offset canceling current to compensate for wiring resis-
tance encountered in remotely located RTDs. RLIN1 and RLIN2
are chosen such that their currents are equal. This makes the
voltage drop in the wiring resistance to the RTD a common-
mode signal which is rejected by the XTR112 and XTR114.
The nearest standard 1% resistor values for RLIN1 and RLIN2
should be adequate for most applications. Tables II and III
provide the 1% resistor values for a three-wire Pt1000 RTD
connection.
If no linearity correction is desired, the VLIN pin should be
left open. With no linearization, RG = 2500 • VFS, where
VFS = full-scale input range.
RTDs
The text and figures thus far have assumed a Pt1000 RTD.
With higher resistance RTDs, the temperature range and
input voltage variation should be evaluated to ensure proper
common-mode biasing of the inputs. As mentioned earlier,
RCM can be adjusted to provide an additional voltage drop to
bias the inputs of the XTR112 and XTR114 within their
common-mode input range.
ERROR ANALYSIS
Table IV shows how to calculate the effect various error
sources have on circuit accuracy. A sample error calculation
for a typical RTD measurement circuit (Pt1000 RTD, 200°C
measurement span) is provided. The results reveal the
XTR112’s and XTR114’s excellent accuracy, in this case 1%
unadjusted for the XTR112, 1.16% for the XTR114. Adjusting
resistors RG and RZ for gain and offset errors improves the
XTR112’s accuracy to 0.28% (0.31% for the XTR114). Note
that these are worst-case errors; guaranteed maximum values
were used in the calculations and all errors were assumed to be
positive (additive). The XTR112 and XTR114 achieve perfor-
mance which is difficult to obtain with discrete circuitry and
requires less space.
OPEN-CIRCUIT PROTECTION
The optional transistor Q2 in Figure 3 provides predictable
behavior with open-circuit RTD connections. It assures that if
any one of the three RTD connections is broken, the XTR’s
output current will go to either its high current limit ( 27mA)
or low current limit ( 1.3mA for XTR112 and 1mA for
XTR114). This is easily detected as an out-of-range condition.
FIGURE 3. Three-Wire Connection for Remotely Located RTDs.
I
O
I
O
XTR112 XTR114
OPEN RTD
TERMINAL
11.3mA 1mA
227mA 27mA
31.3mA 1mA
RTD
(R
LINE2
)(R
LINE1
)
R
Z(1)
R
LIN2(1)
R
LIN1(1)
(R
LINE3
)
21
3
0.01µF
R
CM
0.01µF
Q
2(2)
2N2222
NOTES: (1) See Table I for resistor equations and
1% values. (2) Q
2
optional. Provides predictable
output current if any one RTD connection is
broken:
13
4
3
2
R
G
XTR112
XTR114
7
6
(1)
R
G
R
G
V
IN
V
IN
+
V
LIN
I
R1
I
R2
V
REG
V+
I
RET
I
O
E
B
8
9Q
1
I
O
I
O
14 11
12 1
10
EQUAL line resistances here
creates a small common-mode
voltage which is rejected by
XTR112 and XTR114.
Resistance in this line causes
a small common-mode voltage
which is rejected by XTR112
and XTR114.
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13
®
XTR112, XTR114
TABLE IV. Error Calculation.
SAMPLE ERROR CALCULATION FOR XTR112
(1)
RTD value at 4mA Output (RRTD MIN) 1000
RTD Measurement Range 200°C
Ambient Temperature Range (TA)20°C
Supply Voltage Change (V+) 5V
Common-Mode Voltage Change (CM) 0.1V
SAMPLE
ERROR SOURCE ERROR EQUATION ERROR CALCULATION(2) UNADJ. ADJUST.
INPUT
Input Offset Voltage VOS/(VIN MAX) • 106100µV/(250µA • 3.8/°C • 200°C) • 106526 0
vs Common-Mode CMRR • CM/(VIN MAX) • 10650µV/V • 0.1V/(250µA • 3.8/°C • 200°C) • 10626 26
Input Bias Current IB/IREF • 1060.025µA/250µA • 106100 0
Input Offset Current IOS • RRTD MIN/(VIN MAX) • 1063nA • 1000/(250µA • 3.8/°C • 200°C) • 10616 0
Total Input Error: 668 26
EXCITATION
Current Reference Accuracy IREF Accuracy (%)/100% • 1060.2%/100% • 1062000 0
vs Supply (IREF vs V+) • V+ 25ppm/V • 5V 125 125
Current Reference Matching IREF Matching (%)/100% • IREF 0.1%/100% • 250µA • 1000/(250µA • 3.8/°C • 200°C) • 1061316 0
RRTD MIN/(VIN MAX) • 106
vs Supply (IREF matching vs V+) • V+ • 10ppm/V • 5V • 250µA • 1000/(250µA • 3.8/°C • 200°C) 66 66
RRTD MIN/(VIN MAX)
Total Excitation Error: 3507 191
GAIN
Span Span Error (%)/100% • 1060.2%/100% • 1062000 0
Nonlinearity Nonlinearity (%)/100% • 1060.01%/100% • 106100 100
Total Gain Error: 2100 100
OUTPUT
Zero Output (IZERO - 4mA) /16000µA • 10625µA/16000µA • 1061563 0
vs Supply (IZERO vs V+) • V+/16000µA • 1060.2µA/V • 5V/16000µA • 10663 63
Total Output Error: 1626 63
DRIFT (TA = 20
°
C)
Input Offset Voltage Drift • TA/(VIN MAX) • 1061.5µV/°C • 20°C/(250µA • 3.8/°C • 200°C) • 106158 158
Input Bias Current (typical) Drift • TA/IREF • 10620pA/°C • 20°C/250µA • 10622
Input Offset Current (typical) Drift • TA • RRTD MIN/(VIN MAX) • 1065pA/°C • 20°C • 1000/(250µA • 3.8/°C • 200°C) • 1060.5 0.5
Current Reference Accuracy Drift • TA35ppm/°C • 20°C 700 700
Current Reference Matching Drift • TA • IREF • RRTD MIN/(VIN MAX) 15ppm/°C • 20°C • 250µA • 1000/(250µA • 3.8/°C • 200°C) 395 395
Span Drift • TA25ppm/°C • 20°C 500 500
Zero Output Drift • TA/16000µA • 1060.5µA/°C • 20°C/16000µA • 106626 626
Total Drift Error: 2382 2382
NOISE (0.1Hz to 10Hz, typ)
Input Offset Voltage vn/(VIN MAX) • 1060.6µV/(250µA • 3.8/°C • 200°C) • 10633
Current Reference IREF Noise • RRTD MIN/(VIN MAX) • 1063nA • 1000/(250µA • 3.8/°C • 200°C) • 10616 16
Zero Output IZERO Noise/16000µA • 1060.03µA/16000µA • 10622
Total Noise Error: 21 21
TOTAL ERROR: 10304 2783
(1.03%) (0.28%)
NOTES: (1) For XTR114, IREF = 100µA. Total unadjusted error is 1.16%, adjusted error 0.31%. (2) All errors are min/max and referred to input, unless
otherwise stated.
ERROR
(ppm of Full Scale)
REVERSE-VOLTAGE PROTECTION
The XTR112’s and XTR114’s low compliance rating (7.5V)
permits the use of various voltage protection methods with-
out compromising operating range. Figure 4 shows a diode
bridge circuit which allows normal operation even when the
voltage connection lines are reversed. The bridge causes a
two diode drop (approximately 1.4V) loss in loop supply
voltage. This results in a compliance voltage of approxi-
mately 9V—satisfactory for most applications. If 1.4V drop
in loop supply is too much, a diode can be inserted in series
with the loop supply voltage and the V+ pin. This protects
against reverse output connection lines with only a 0.7V loss
in loop supply voltage.
SURGE PROTECTION
Remote connections to current transmitters can sometimes be
subjected to voltage surges. It is prudent to limit the maximum
surge voltage applied to the XTR to as low as practical.
Various zener diode and surge clamping diodes are specially
designed for this purpose. Select a clamp diode with as low a
voltage rating as possible for best protection. For example, a
36V protection diode will assure proper transmitter operation
at normal loop voltages, yet will provide an appropriate level
of protection against voltage surges. Characterization tests on
three production lots showed no damage to the XTR112 or
XTR114 within loop supply voltages up to 65V.
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14
®
XTR112, XTR114
FIGURE 5. Input Bypassing Technique with Linearization.
14 11
12
13
4
3
2
R
G
XTR112
XTR114
R
CM
7
1
0.01µF
0.01µF 0.01µF
R
Z
(1)
RTD
6
NOTE: (1) Bypass capacitors can be connected
to either the I
RET
pin or the I
O
pin.
R
G
R
G
V
IN
V
IN
+
V
LIN
I
R1
I
R2
V
REG
V+
I
RET
I
O
E
B
8
0.01µF
9
10
1k
R
LIN1
R
LIN2
1k
XTR112
XTR114
7
V+
I
O
E
B
V
PS
10
0.01µF
R
L
D
1(1)
9
8
NOTE: (1) Zener Diode 36V: 1N4753A or General
Semiconductor Transorb
TM
1N6286A. Use lower
voltage zener diodes with loop power supply
voltages less than 30V for increased protection.
See “Over-Voltage Surge Protection.”
Maximum V
PS
must be
less than minimum
voltage rating of zener
diode.
The diode bridge causes
a 1.4V loss in loop supply
voltage.
1N4148
Diodes
6
I
RET
FIGURE 4. Reverse Voltage Operation and Over-Voltage Surge Protection.
Most surge protection zener diodes have a diode character-
istic in the forward direction that will conduct excessive
current, possibly damaging receiving-side circuitry if the
loop connections are reversed. If a surge protection diode is
used, a series diode or diode bridge should be used for
protection against reversed connections.
RADIO FREQUENCY INTERFERENCE
The long wire lengths of current loops invite radio frequency
interference. RF can be rectified by the sensitive input
circuitry of the XTR112 and XTR114 causing errors. This
generally appears as an unstable output current that varies
with the position of loop supply or input wiring.
If the RTD sensor is remotely located, the interference may
enter at the input terminals. For integrated transmitter as-
semblies with short connection to the sensor, the interfer-
ence more likely comes from the current loop connections.
Bypass capacitors on the input reduce or eliminate this input
interference. Connect these bypass capacitors to the IRET
terminal as shown in Figure 5. Although the dc voltage at the
IRET terminal is not equal to 0V (at the loop supply, VPS) this
circuit point can be considered the transmitter’s “ground.”
The 0.01µF capacitor connected between V+ and IO may
help minimize output interference.
swarm
15
®
XTR112, XTR114
FIGURE 6. Thermocouple Low Offset, Low Drift Loop Measurement with Diode Cold-Junction Compensation.
14
1
12
5V
11
13
IREG < 2mA
4
3
2
6
RG
1250XTR112
XTR114
7
RG
RG
VIN
VIN
+
V
REG
I
R2
V+
IRET
IO
E
B
8
IO = 4mA + (VIN –VIN)
+–
40
RG
9
10
1M
0.01µF
20k
OPA277
V+
V–
Type J
1N4148
Isothermal
Block
1M(1)
25
50
1k
I
R1
V
LIN
RCM(2)
NOTES: (1) For burn-out indication.
(2) XTR112, RCM = 3.3k
XTR114, RCM = 8.2k
FIGURE 7. ±12V Powered Transmitter/Receiver Loop.
0.01µFQ
1
1N4148
–12V
1µF
5
4
2
3
15
13 14
11
10
12
1µF
V
O
= 0 to 5V
RCV420
16
+12V
8
7
9
E
B
14 11
12
13
4
3
2
XTR112
R
CM
1
0.01µF
R
Z
1370
R
LIN1
18.7kR
G
1270
RTD
Pt1000
100°C to
600°C
6
R
G
R
G
V
IN
V
IN
+
V
LIN
I
R1
I
R2
V
REG
V+
I
RET
I
O
10
I
O
= 4mA – 20mA
NOTE: A two-wire RTD connection is shown. For remotely
located RTDs, a three-wire RTD conection is recommended. R
G
becomes 1180, R
LIN2
is 40.2k. See Figure 3 and Table II.
Bums“ N
16
®
XTR112, XTR114
FIGURE 9. Bridge Input, Current Excitation.
4
3
2
R
G
XTR112
XTR114
7
6
R
G
R
G
V+
10
13
B
E
9
8
V
IN
V
IN
+
I
RET
R
CM(1)
200µA (XTR114)
500µA (XTR112)
NOTE: (1) Use R
CM
to adjust the
common-mode voltage to within
1.25V to 3.5V.
14
1
12
11
V
REG
I
R2
I
R1
V
LIN
FIGURE 8. Isolated Transmitter/Receiver Loop.
5
4
2
3
15
13 14
11
10
12
RCV420
16
16 2
15
10 8
7
9
V–
VO
V+
0 – 5V
ISO124
1
+15V
0
–15V
1µF
1µF
Isolated Power
from PWS740
0.01µFQ1
1N4148
8
7
9
E
B
14 11
12
13
4
3
2
XTR112
XTR114
RCM
1
0.01µF
RLIN1
RG
RLIN2
RTD
6
RG
RG
VLIN IR1 IR2 V
REG
V+
IRET
IO
10
IO = 4mA – 20mA
VIN
VIN
+
RZ
NOTE: A three-wire RTD connection is shown.
For a two-wire RTD connection, eliminate RLIN2.
{1‘ TEXAS INSTRUMENTS
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
XTR112U ACTIVE SOIC D 14 58 None CU SNPB Level-3-220C-168 HR
XTR112U/2K5 ACTIVE SOIC D 14 2500 None CU SNPB Level-3-220C-168 HR
XTR112UA ACTIVE SOIC D 14 58 None CU SNPB Level-3-220C-168 HR
XTR112UA/2K5 ACTIVE SOIC D 14 2500 None CU SNPB Level-3-220C-168 HR
XTR114U ACTIVE SOIC D 14 58 None CU SNPB Level-3-220C-168 HR
XTR114U/2K5 ACTIVE SOIC D 14 2500 None CU SNPB Level-3-220C-168 HR
XTR114UA ACTIVE SOIC D 14 58 None CU SNPB Level-3-220C-168 HR
XTR114UA/2K5 ACTIVE SOIC D 14 2500 None CU SNPB Level-3-220C-168 HR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional
product content details.
None: Not yet available Lead (Pb-Free).
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens,
including bromine (Br) or antimony (Sb) above 0.1% of total product weight.
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 9-Dec-2004
Addendum-Page 1
IMPORTANT NOTICE
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DSP dsp.ti.com Broadband www.ti.com/broadband
Interface interface.ti.com Digital Control www.ti.com/digitalcontrol
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Power Mgmt power.ti.com Optical Networking www.ti.com/opticalnetwork
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Copyright 2004, Texas Instruments Incorporated

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