NSS,NSV1C201L Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2008
October, 2016 Rev. 6
1Publication Order Number:
NSS1C201L/D
NSS1C201L, NSV1C201L
100 V, 3.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductors e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DCDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCBO 140 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Collector Current Continuous IC2.0 A
Collector Current Peak ICM 3.0 A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1) 490
3.7
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA (Note 1) 255 °C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2) 710
4.3
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA (Note 2) 176 °C/W
Junction and Storage
Temperature Range
TJ, Tstg 55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR4 @ 100 mm2, 1 oz. copper traces.
2. FR4 @ 500 mm2, 1 oz. copper traces.
Device Package Shipping
ORDERING INFORMATION
NSS1C201LT1G,
NSV1C201LT1G
SOT23
(PbFree)
3000 / Tape & Reel
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
SOT23 (TO236)
CASE 318
STYLE 6
3
2
1
www.onsemi.com
100 VOLTS, 3.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
VT MG
G
VT = Specific Device Code
M = Date Code*
G= PbFree Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
NSS1C201L, NSV1C201L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
100
Vdc
CollectorBase Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
140
Vdc
EmitterBase Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
7.0
Vdc
Collector Cutoff Current
(VCB = 140 Vdc, IE = 0)
ICBO
100
nAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
50
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
150
120
80
40
240 360
CollectorEmitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.01 A)
(IC = 0.5 A, IB = 0.05 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
0.030
0.060
0.090
0.150
V
Base Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.100 A)
VBE(sat)
0.950
V
Base Emitter Turnon Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
0.850
V
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
110
MHz
Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Cibo 230 pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 14 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
TYPICAL CHARACTERISTICS
Figure 1. Power Derating
TA, AMBIENT TEMPERATURE (°C)
140120100806040200
0
0.1
0.2
0.3
0.4
0.5
0.8
PD, POWER DERATING (W)
Note 2
Note 1
0.6
0.7
NSS1C201L, NSV1C201L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (A)
1010.10.010.001
0
50
100
150
200
300
350
400
hFE, DC CURRENT GAIN
250
VCE = 2 V
150°C
55°C
25°C
Figure 3. DC Current Gain
Figure 4. CollectorEmitter Saturation Voltage
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
1010.10.010.001
0.01
0.1
1
Figure 5. CollectorEmitter Saturation Voltage
Figure 6. BaseEmitter Saturation Voltage
IC, COLLECTOR CURRENT (A)
1010.10.010.001
0.2
0.4
0.6
0.8
1.0
1.2
Figure 7. BaseEmitter Saturation Voltage
VCE(sat), COLLECTOREMITTER
SATURATION (V)
VCE(sat), COLLECTOREMITTER SATURATION (V)
VBE(sat), BASEEMITTER SATURATION (V)
1010.10.010.001
0
50
100
150
200
300
350
400
hFE, DC CURRENT GAIN
250
VCE = 4 V
150°C
55°C
25°C
IC/IB = 10
150°C
55°C
25°C
IC, COLLECTOR CURRENT (A)
1010.10.010.001
0.01
0.1
1
IC/IB = 20
150°C
55°C
25°C
IC/IB = 10
150°C
55°C
25°C
IC, COLLECTOR CURRENT (A)
1010.10.010.001
0.2
0.4
0.6
0.8
1.0
1.2
VBE(sat), BASEEMITTER SATURATION (V)
IC/IB = 50
150°C
55°C
25°C
Thermal LImH
NSS1C201L, NSV1C201L
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 8. Base Emitter Voltage
IC, COLLECTOR CURRENT (A)
1010.10.010.001
0.2
0.4
0.6
0.8
1.0
1.2
VBE(on), BASEEMITTER VOLTAGE (V)
VCE = 2 V
150°C
55°C
25°C
Figure 9. Collector Saturation Region
Figure 10. Input Capacitance
IB, BASE CURRENT (A)
VEB, EMITTER BASE VOLTAGE (V)
10.10.010.0010.0001
0.01
0.1
1
76543210
0
50
100
150
200
300
350
400
Figure 11. Output Capacitance
Figure 12. CurrentGain Bandwidth Product
VCB, COLLECTOR BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
908050403020100
0
5
10
20
30
35
40
50
10.10.010.001
0
20
40
60
80
100
120
140
Figure 13. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.01
0.1
1
10
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
CIB, INPUT CAPACITANCE (pF)
COB, OUTPUT CAPACITANCE (pF)
fTau, CURRENT GAIN BANDWIDTH (MHz)
IC, COLLECTOR CURRENT (A)
IC = 0.1 A
0.5 A
1 A
2 A 3 A
8
250
TJ = 25°C
fTEST = 1 MHz
60 70 100
15
25
45 TJ = 25°C
fTEST = 1 MHz
TJ = 25°C
fTEST = 1 MHz
VCE = 2 V
10 mS
1 mS
100 mS
Thermal Limit
NSS1C201L, NSV1C201L
www.onsemi.com
5
t, PULSE TIME (s)
Figure 14. Transient Thermal Resistnce
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
1000
100
10
1
0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
R(t), (°C/W)
NSS1C201L, NSV1C201L
www.onsemi.com
6
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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