NGTB40N120L3WG Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
February, 2018 − Rev. 2 1Publication Order Number:
NGTB40N120L3W/D
NGTB40N120L3WG
IGBT - Ultra Field Stop
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for motor driver applications. Incorporated into the device is
a soft and fast co−packaged free wheeling diode with a low forward
voltage.
Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for Low VCEsat
These are Pb−Free Devices
Typical Applications
Solar Inverter and UPS
Industrial Switching
Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage VCES 1200 V
Collector current
@ TC = 25°C
@ TC = 100°C
IC160
40
A
Pulsed collector current, Tpulse
limited by TJmax
ICM 160 A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF160
40
A
Diode pulsed current, Tpulse limited
by TJmax
IFM 160 A
Gate−emitter voltage
Transient gate−emitter voltage
(tpulse = 5 ms, D < 0.10)
VGE ±20
±30 V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD454
227
W
Operating junction temperature range TJ−55 to +175 °C
Storage temperature range Tstg −55 to +175 °C
Lead temperature for soldering, 1/8
from case for 5 seconds TSLD 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
C
G
40 A, 1200 V
VCEsat = 1.55 V
Eoff = 1.5 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB40N120L3WG TO−247
(Pb−Free)
30 Units / Ra
il
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A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
40N120L3
AYWWG
G
E
C
TO−247
CASE 340AL
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2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.33 °C/W
Thermal resistance junction−to−case, for Diode RqJC 0.61 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited VGE = 0 V, IC = 500 mAV(BR)CES 1200 − V
Collector−emitter saturation voltage VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°CVCEsat
1.55
2.0 1.8
V
Gate−emitter threshold voltage VGE = VCE, IC = 400 mAVGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°CICES
0.5 0.4 mA
Gate leakage current, collector−emitter
short−circuited VGE = 20 V, VCE = 0 V IGES 200 nA
Input capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Cies − 4912 − pF
Output capacitance Coes − 140 −
Reverse transfer capacitance Cres − 80
Gate charge total
VCE = 600 V, IC = 40 A, VGE = 15 V
Qg− 220 − nC
Gate to emitter charge Qge − 42
Gate to collector charge Qgc 110
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15 V
td(on) − 18 − ns
Rise time tr− 30 −
Turn−off delay time td(off) − 150 −
Fall time tf− 131 −
Turn−on switching loss Eon − 1.5 mJ
Turn−off switching loss Eoff − 1.5
Total switching loss Ets − 3.0
Turn−on delay time
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15 V
td(on) − 18 − ns
Rise time tr− 31 −
Turn−off delay time td(off) − 156 −
Fall time tf− 220 −
Turn−on switching loss Eon − 2.0 mJ
Turn−off switching loss Eoff − 2.3
Total switching loss Ets − 4.3
DIODE CHARACTERISTICS
Forward voltage VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A TJ = 175°CVF
3.0
2.8 3.4
V
Reverse recovery time
TJ = 25°C
IF = 40 A, VR = 600 V
diF/dt = 500 A/ms
trr − 86 − ns
Reverse recovery charge Qrr − 0.56 mc
Reverse recovery current Irrm − 12 − A
Diode peak rate of fall of reverse recovery
current during tb dIrrm/dt −210 A/ms
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinSymbolTest Conditions
DIODE CHARACTERISTICS
Reverse recovery time
TJ = 125°C
IF = 40 A, VR = 600 V
diF/dt = 500 A/ms
trr − 136 − ns
Reverse recovery charge Qrr − 1.47 mc
Reverse recovery current Irrm − 20 − A
Diode peak rate of fall of reverse recovery
current during tb dIrrm/dt −212 A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
: 175%:
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TYPICAL CHARACTERISTICS
9 V
8 V
Figure 1. Output Characteristics Figure 2. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
843210
0
20
40
60
80
100
160
Figure 3. Output Characteristics Figure 4. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
0
0
20
40
60
80
100
160
Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ
VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
121086420
0
20
40
160
2001007525−25−50−75
1.0
1.4
1.8
2.8
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 to 13 V
TJ = 25°C
10 V
7 V
843210
0
20
40
60
80
100
140
IC, COLLECTOR CURRENT (A)
VGE = 20 to 13 V
TJ = 150°C
10 V
9 V
8 V
7 V
843210
0
20
100
40
80
60
160
IC, COLLECTOR CURRENT (A)
VGE = 20 to 13 V
TJ = −55°C
10 V
9 V
11 V
14
2.0
7−8 V
120
140
120
140
120 120
140
60
80
100
0 50 125 150
IC = 75 A
140
567
11 V
160
567
11 V
VGE = 20 to 13 V
10 V
9 V
11 V
TJ = 175°C
8 V
7 V
TJ = 25°C
TJ = 175°C
120
1.2
1.6
2.2
2.4
2.6
175
IC = 40 A
IC = 20 A
567 84321567
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TYPICAL CHARACTERISTICS
Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)
3020100
10
100
10,000
Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature
QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C)
200150100500
0
4
8
16
0
2.3
Figure 11. Switching Loss vs. Temperature Figure 12. Switching Loss vs. IC
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A)
0
1
10
1000
706040302010
6
CAPACITANCE (pF)
IF, FORWARD CURRENT (A)
VGE, GATE−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
100
1000
250
VCE = 600 V
VGE = 15 V
IC = 40 A
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
90
40
100
70
50
10
00 0.5 1.0 1.5 2.0 2.5 3.0 4.0 4.5
1.5
0.5
0.3 20 40 60 80 100 120 140 200
20 60 80 120 160 200
5
2
0
60
TJ = 25°C
Cies
tf
td(on)
tr
td(off)
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
Eon
Eoff
100
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
2
6
10
12
14
50 70 80 90
Coes
Cres
TJ = 175°C
TJ = 25°C
3.5
20
30
40
60
80
90
Eon
Eoff
160 180
0.7
0.9
1.1
1.3
1.7
1.9
2.1
40 100 140 180
4
3
1
50 80
dc aperanon Smgle Nonrepemwe Pu‘se TC : 25cc Curves must be aerated lmearly wnh mcrease
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TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. ICFigure 14. Switching Loss vs. RG
IC, COLLECTOR CURRENT (A) Rg, GATE RESISTOR (W)
8070605040302010
100
1000
60504030100
9
Figure 15. Switching Time vs. RGFigure 16. Switching Loss vs. VCE
Rg, GATE RESISTOR (W)VCE, COLLECTOR−EMITTER VOLTAGE (V)
6050403020100
10
1000
750700550400350
0
0.5
2.0
3.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000100101
0.1
10
100
1000
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
IC, COLLECTOR CURRENT (A)
90
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
70
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 40 A
70
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
7
4
2
0
10
100
450 500 600 650
VGE = 15 V
IC = 40 A
Rg = 10 W
TJ = 175°C
tf
td(on)
tr
td(off)
1
dc operation
1 ms
50 ms
100 ms
Figure 17. Switching Time vs. VCE
VCE, COLLECTOR−EMITTER VOLTAGE (V)
700650600550500450400350
10
1000
SWITCHING TIME (ns)
750
100
Eon
Eoff
Figure 18. Safe Operating Area
tf
td(on)
tr
td(off)
Eon
Eoff
tf
td(on)
tr
td(off)
1
3
5
6
8
20
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 40 A
800
1.0
1.5
2.5
3.0
800
VGE = 15 V
IC = 40 A
Rg = 10 W
TJ = 175°C
10,000
\ \ :2“; I;:40A \ :175©C,IF : 40 A / /
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TYPICAL CHARACTERISTICS
Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt
VCE, COLLECTOR−EMITTER VOLTAGE (V) diF/dt, DIODE CURRENT SLOPE (A/ms)
1000100101
100
1000
900700500300100
350
Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt
diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms)
900700500300100
0
1.0
3.5
1100100
0
10
30
50
Figure 23. VF vs. TJ
TJ, JUNCTION TEMPERATURE (°C)
12525−25−75
1.0
3.0
4.0
4.5
IC, COLLECTOR CURRENT (A)
trr, REVERSE RECOVERY TIME (ns)
Qrr, REVERSE RECOVERY CHARGE (mC)
Irm, REVERSE RECOVERY CURRENT (A)
VF, FORWARD VOLTAGE (V)
10,000 1100
1100
1
250
150
50
0
10
0.5
2.0
1.5
3.0
300 500 700 900
2.0
1.5
VGE = 15 V, TC = 175°C
100
200
300
TJ = 175°C, IF = 40 A
TJ = 25°C, IF = 40 A
TJ = 175°C, IF = 40 A
TJ = 25°C, IF = 40 A
TJ = 175°C, IF = 40 A
TJ = 25°C, IF = 40 A
2.5
20
40
75 1751000−50 50 150 200
2.5
3.5
IF = 40 A
IF = 75 A
IF = 20 A
VR = 400 V
VR = 400 V
VR = 400 V
u my
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TYPICAL CHARACTERISTICS
Figure 24. Collector Current vs. Switching Frequency
FREQUENCY (kHz)
1000100100.01 1
Figure 25. IGBT Transient Thermal Impedance
ON−PULSE WIDTH (s)
0.10.010.0010.00010.000001
0.0001
0.01
0.1
1
Figure 26. Diode Transient Thermal Impedance
10.00001
ON−PULSE WIDTH (s)
0.10.010.0010.00010.000001
0.1
1
10.00001
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
RqJC = 0.33
RqJC = 0.61
0.01
Junction
C1C2
R1R2
Ci = ti/Ri
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Case
Cn
Rn
Junction
C1C2
R1R2
Ci = ti/Ri
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Ri (°C/W) Ci (J/W)
0.0039
0.0539
0.0314
0.0811
0.0186
0.1007
Case
Cn
Rn
0.0897
1.8437
0.1115
0.0172
0.01540.0065
0.1
0
60
140
180
Ipk (A)
20
40
120
80
100
160
0.001
Ri (°C/W) Ci (J/W)
0.000090
0.000661
0.002014
0.011089
0.015127
0.015703
0.002059
0.005527
0.048571
0.057211
0.031996
0.117443
0.129731
0.031254
0.026926
0.077082
0.225628
0.551763
0.140155
0.181237
Ramp, TC = 80°C
Ramp, TC = 110°C
Square, TC = 80°C
Square, TC = 110°C
R(t), SQUARE−WAVE PEAK (°C/W)R(t), SQUARE−WAVE PEAK (°C/W)
DUT 10% V e flg‘y LVge —\ peak Vcc 90%|: \ 100% IL 10%|: 2% VLe tdmn) Ir' ‘ [)th TLJnrOn Enorc‘y '2 + 3L3 J ED” =/V:o I: m M M 12 W
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Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
90% V92 +Vge I VCF 100% VIE Mon) 109‘ Vt? Y, f2 ‘ 5us ED_"=“‘ Vce I: at §\ " www.0nsemi.com
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Figure 29. Definition of Turn Off Waveform
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11
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
E2
L1
D
L
b4
b2
b
E
0.25 MBA
M
c
A1
A
123
B
e
2X
3X
0.635 MBA
M
A
S
P
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
DIM MIN MAX
MILLIMETERS
D20.80 21.34
E15.50 16.25
A4.70 5.30
b1.07 1.33
b2 1.65 2.35
e5.45 BSC
A1 2.20 2.60
c0.45 0.68
L19.80 20.80
Q5.40 6.20
E2 4.32 5.49
L1 3.81 4.32
P3.55 3.65
S6.15 BSC
b4 2.60 3.40
NOTE 6
4
NOTE 7
Q
NOTE 4
NOTE 3
NOTE 5
E2/2
NOTE 4
F2.655 ---
F
2X
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