NGTB40N120FL3WG Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
February, 2019 Rev. 4
1Publication Order Number:
NGTB40N120FL3W/D
NGTB40N120FL3WG
IGBT - Ultra Field Stop
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the device
is a soft and fast copackaged free wheeling diode with a low forward
voltage.
Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are PbFree Devices
Typical Applications
Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collectoremitter voltage VCES 1200 V
Collector current
@ TC = 25°C
@ TC = 100°C
IC80
40
A
Pulsed collector current, Tpulse
limited by TJmax
ICM 160 A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF80
40
A
Diode pulsed current, Tpulse limited
by TJmax
IFM 160 A
Gateemitter voltage
Transient gateemitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE ±20
±30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD454
227
W
Operating junction temperature range TJ55 to +175 °C
Storage temperature range Tstg 55 to +175 °C
Lead temperature for soldering, 1/8
from case for 5 seconds
TSLD 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO247
CASE 340AL
C
G
40 A, 1200 V
VCEsat = 1.7 V
Eoff = 1.1 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB40N120FL3WG TO247
(PbFree)
30 Units / Rail
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A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
MARKING DIAGRAM
40N120FL3
AYWWG
G
E
C
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THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junctiontocase, for IGBT RqJC 0.33 °C/W
Thermal resistance junctiontocase, for Diode RqJC 0.61 °C/W
Thermal resistance junctiontoambient RqJA 40 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mAV(BR)CES 1200 V
Collectoremitter saturation voltage VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
1.7
2.3
1.95
V
Gateemitter threshold voltage VGE = VCE, IC = 400 mAVGE(th) 4.5 5.5 6.5 V
Collectoremitter cutoff current, gate
emitter shortcircuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
0.5
0.4
mA
Gate leakage current, collectoremitter
shortcircuited
VGE = 20 V , VCE = 0 V IGES 200 nA
Input capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Cies 4912 pF
Output capacitance Coes 140
Reverse transfer capacitance Cres 80
Gate charge total
VCE = 600 V, IC = 40 A, VGE = 15 V
Qg212 nC
Gate to emitter charge Qge 43
Gate to collector charge Qgc 102
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turnon delay time
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15V
td(on) 18 ns
Rise time tr31
Turnoff delay time td(off) 145
Fall time tf107
Turnon switching loss Eon 1.6 mJ
Turnoff switching loss Eoff 1.1
Total switching loss Ets 2.7
Turnon delay time
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15 V
td(on) 20 ns
Rise time tr31
Turnoff delay time td(off) 153
Fall time tf173
Turnon switching loss Eon 2.2 mJ
Turnoff switching loss Eoff 1.7
Total switching loss Ets 3.9
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
VF
3.0
2.8
3.4
V
Reverse recovery time
TJ = 25°C
IF = 40 A, VR = 600 V
diF/dt = 500 A/ms
trr 86 ns
Reverse recovery charge Qrr 0.56 mc
Reverse recovery current Irrm 12 A
Diode peak rate of fall of reverse recovery
current during tb
dIrrm/dt − −210 A/ms
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinSymbolTest Conditions
DIODE CHARACTERISTIC
Reverse recovery time
TJ = 125°C
IF = 40 A, VR = 600 V
diF/dt = 500 A/ms
trr 136 ns
Reverse recovery charge Qrr 1.47 mc
Reverse recovery current Irrm 20 A
Diode peak rate of fall of reverse recovery
current during tb
dIrrm/dt − −212 A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
VCE, COLLECTOREMITTER VOLTAGE (V) VCE, COLLECTOREMITTER VOLTAGE (V)
76543210
0
20
40
60
80
100
140
160
76543210
0
20
40
60
100
120
140
160
Figure 3. Output Characteristics Figure 4. Output Characteristics
VCE, COLLECTOREMITTER VOLTAGE (V) VCE, COLLECTOREMITTER VOLTAGE (V)
76543210
0
20
40
60
100
120
140
160
76543210
0
20
40
60
100
120
140
160
Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ
VGE, GATEEMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
1412106420
0
20
40
60
80
100
140
160
17512575252575
1.0
2.0
3.0
3.5
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOREMITTER VOLTAGE (V)
8
120 11 V
10 V
9 V
8 V
7 V
TJ = 25°CVGE = 20 V 13 V
11 V
10 V
9 V
8 V
7 V
TJ = 150°C
VGE = 20 V 13 V
11 V
10 V
9 V
7 V and 8 V
TJ = 55°C
VGE =
20 V 13 V
11 V
10 V
9 V
8 V
7 V
TJ = 175°C
VGE = 20 V 13 V
8
80
8
80
8
80
TJ = 25°C
TJ = 175°C
8
120 IC = 75 A
1.5
2.5
IC = 40 A
IC = 20 A
50 0 20015010050
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TYPICAL CHARACTERISTICS
Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics
VCE, COLLECTOREMITTER VOLTAGE (V) VF
, FORWARD VOLTAGE (V)
908060504020100
10
100
1000
10,000
3.02.5 4.52.01.51.00.50
0
10
30
40
60
70
80
100
Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature
QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C)
250200150100500
0
2
6
8
10
14
16
1801401201006040200
0.3
0.8
1.3
1.8
2.3
2.8
Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A)
1801601201006040200
1
10
100
1000
8070605040302010
0
1
3
5
6
CAPACITANCE (pF)
IF
, FORWARD CURRENT (A)
VGE, GATEEMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
30 70 100
TJ = 25°C
Coes
Cies
Cres 20
50
90
TJ = 25°C
TJ = 175°C
4
12
VCE = 600 V
VGE = 15 V
IC = 40 A
80 160 200
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
Eoff
Eon
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
Eoff
Eon
90
2
4
80 140 200
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
td(off)
td(on)
tr
tf
3.5 4.0
dc operation Slngle Nonrepemwe Pulse Tc : 25%: Curves must be deleted many with Increase
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TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG
IC, COLLECTOR CURRENT (A) RG, GATE RESISTOR (W)
8070605040302010
1
10
100
1000
605040 703020100
0
1
2
3
4
5
7
8
Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE
RG, GATE RESISTOR (W)VCE, COLLECTOREMITTER VOLTAGE (V)
60 7050403020100
10
100
1000
750700650600500450400350
0
0.5
1.0
1.5
2.0
3.0
3.5
4.0
Figure 17. Switching Time vs. VCE
VCE, COLLECTOREMITTER VOLTAGE (V)
700650600550500450400350
10
100
1000
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
Eoff
Eon
td(off)
td(on)
tr
tf
90
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 40 A
6
550 800
Eoff
Eon
VGE = 15 V
TJ = 175°C
IC = 40 A
Rg = 10 W
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 40 A
td(off)
td(on)
tr
tf
VGE = 15 V
TJ = 175°C
IC = 40 A
Rg = 10 W
td(off)
td(on)
tr
tf
750
9
10
2.5
Figure 18. Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (V)
1K100101
0.1
100
1000
IC, COLLECTOR CURRENT (A)
10K800
10
1
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
:zsfc‘ IF:40A \ :175‘C‘IF : 40A
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TYPICAL CHARACTERISTICS
Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt
VCE, COLLECTOREMITTER VOLTAGE (V) diF/dt, DIODE CURRENT SLOPE (A/ms)
1K100101
1
10
100
1000
900700 1100500300100
0
50
100
150
250
Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt
diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms)
900 1100700500300100
0
1.0
3.5
900700300100
0
10
20
40
50
Figure 23. VF vs. TJ
TJ, JUNCTION TEMPERATURE (°C)
1007550250255075
1.0
2.0
4.5
IC, COLLECTOR CURRENT (A)
trr, REVERSE RECOVERY TIME (ns)
Qrr, REVERSE RECOVERY CHARGE (mC)
Irm, REVERSE RECOVERY CURRENT (A)
VF
, FORWARD VOLTAGE (V)
10K
200
500 1100
150
300
350
30
200
VGE = 15 V, TC = 175°C
TJ = 25°C, IF = 40 A
TJ = 175°C, IF = 40 A
TJ = 25°C, IF = 40 A
TJ = 175°C, IF = 40 A
TJ = 25°C, IF = 40 A
TJ = 175°C, IF = 40 A
0.5
1.5
2.5
2.0
3.0
IC = 75 A
IC = 40 A
IC = 20 A
1.5
125 175
2.5
3.0
3.5
4.0
VR = 400 V
VR = 400 V
VR = 400 V
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TYPICAL CHARACTERISTICS
Figure 24. Collector Current vs. Switching Frequency
0.01 0.1 1 10 100 1000
180
FREQUENCY (kHz)
Ipk (A)
VCE = 600 V,
Rgate = 10 W,
VGE = 15 V
160
140
120
100
80
60
40
20
0
TC = 80°C
TC = 80°C
TC = 110°C
TC = 110°C
Ramp
Square
Figure 25. IGBT Transient Thermal Impedance
PULSE TIME (sec)
R(t), SQUAREWAVE PEAK (°C/W)
Figure 26. Diode Transient Thermal Impedance
PULSE TIME (sec)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
0.0001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
RqJC = 0.33
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
RqJC = 0.61
Junction Case
C1C2
R1R2Rn
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Cn
Ci (J/W)
0.0154
0.0039
0.0539
0.0314
0.0897
1.8437
Ri (°C/W)
0.0065
0.0811
0.0186
0.1007
0.1115
0.0172
0.001
R(t), SQUAREWAVE PEAK (°C/W)
Junction Case
C1C2
R1R2Rn
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Cn
Ci (J/W)
0.000090
0.000661
0.002014
0.002059
0.005527
0.031996
Ri (°C/W)
0.011089
0.015127
0.015703
0.048571
0.057211
0.031254
0.117443
0.129731
0.225628
0.551763
0.026926
0.077082
0.140155
0.181237
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Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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Figure 29. Definition of Turn Off Waveform
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PACKAGE DIMENSIONS
TO247
CASE 340AL
ISSUE A
E2
L1
D
L
b4
b2
b
E
0.25 MBA
M
c
A1
A
123
B
e
2X
3X
0.635 MBA
M
A
S
P
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
DIM MIN MAX
MILLIMETERS
D20.30 21.40
E15.50 16.25
A4.70 5.30
b1.00 1.40
b2 1.65 2.35
e5.45 BSC
A1 2.20 2.60
c0.40 0.80
L19.80 20.80
Q5.40 6.20
E2 4.32 5.49
L1 3.50 4.50
P3.55 3.65
S6.15 BSC
b4 2.60 3.40
NOTE 6
4
NOTE 7
Q
NOTE 4
NOTE 3
NOTE 5
E2/2
NOTE 4
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