SP814x Series Datasheet by Littelfuse Inc.

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©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA ® Diodes)
Revision: 03/02/18
TVS Diode Arrays (SPA
® Diodes)
Low Capacitance ESD Protection - SP814x Series
Description
Applications
The SP814x series integrates 4 or 6 channels of ultra low
capacitance rail-to-rail diodes and an additional zener diode
to provide protection for electronic equipment that may
experience destructive electrostatic discharges (ESD).
This robust component can safely absorb repetitive ESD
strikes above the maximum level specified in IEC 61000-4-
2 international standard (±8kV contact discharge) without
performance degradation. The extremely low loading
capacitance also makes it ideal for protecting high speed
signal pins such as HDMI2.0, USB3.0, USB2.0, and IEEE
1394.
Features
ESD, IEC 61000-4-2,
±22kV contact, ±22kV air
EFT, IEC 61000-4-4, 40A
(tP=5/50ns)
Lightning, IEC 61000-
4-5 2nd edition,2.5A
(tP=8/20μs)
Low capacitance of 1.0pF
(TYP) per I/O
Low leakage current of
25nA (TYP) at 5V
Small form factor μDFN
packages (JEDEC MO-229)
saves board space
• AEC-Q101 qualified
• Moisture Sensitivity
Level (MSL -1)
• Halogen free, lead free
and RoHS compliant
• LCD/PDP TVs
• External Storage
• DVD/ Blue-Ray Players
• Desktops/Servers
• Notebooks/Tablets
• Set Top Boxes
• Mobile Phones
• Flash Memory Cards
• Digital Cameras
Pinout
Functional Block Diagram
SP814x Series 1.0pF 22KV Diode Array RoHS
Pb
GREEN
SP8142-04UTG
SP8143-06UTG
SP8143-06UTG
SP8142-04UTG
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©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA ® Diodes)
Revision: 03/02/18
TVS Diode Arrays (SPA
® Diodes)
Low Capacitance ESD Protection - SP814x Series
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation
of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
IPP Peak Current (tp=8/20μs) 2.5 A
TOP Operating Temperature -40 to 125 °C
TSTOR Storage Temperature -55 to 150 °C
Electrical Characteristics (TOP=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage VRWM IR ≤ 1µA 5.0 V
Reverse Leakage Current ILEAK VR=5V, Any I/O to GND 25 50 nA
Channel Resistance RCH
Pins 1−10, 2−9, 4−7 and 5−6, SP8142
Pins 1−16, 2−15, 4−13 ,5−12, 7-10 and
8-9, SP8143
0.5 Ω
Clamp Voltage1VC
IPP=1A, tp=8/20µs, Fwd 9.2 V
IPP=2A, tp=8/20µs, Fwd 10.3 V
Dynamic Resistance2RDYN TLP, tP=100ns, I/O to GND 0.3 Ω
ESD Withstand Voltage1VESD
IEC 61000-4-2 (Contact) ±22 kV
IEC 61000-4-2 (Air) ±22 kV
Diode Capacitance1CI/O-GND Reverse Bias=0V, f=1 MHz 1. 0 pF
8/20μs Pulse Waveform Capacitance vs. Reverse Bias
Note: 1 Parameter is guaranteed by design and/or component characterization.
2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns
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©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA ® Diodes)
Revision: 03/02/18
TVS Diode Arrays (SPA
® Diodes)
Low Capacitance ESD Protection - SP814x Series
Clamping Voltage vs IPP Transmission Line Pulsing(TLP) Plot
Differential Mode Attenuation SDD21 vs. Frequency Analog Crosstalk (S41)
HDMI2.0 Eye Diagram
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©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA ® Diodes)
Revision: 03/02/18
TVS Diode Arrays (SPA
® Diodes)
Low Capacitance ESD Protection - SP814x Series
Time
Temperature
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
Preheat
P
rehea
t
Ramp-up
R
amp-up
Ramp-down
R
amp-d
o
Critical Zone
TL to TP
C
ritical Zon
e
T
L
to
T
P
Reflow Condition Pb – Free assembly
Pre Heat
- Temperature Min (Ts(min)) 150°C
- Temperature Max (Ts(max)) 200°C
- Time (min to max) (ts) 60 – 180 secs
Average ramp up rate (Liquidus) Temp (TL)
to peak 3°C/second max
TS(max) to TL - Ramp-up Rate 3°C/second max
Reflow - Temperature (TL) (Liquidus) 217°C
- Temperature (tL) 60 – 150 seconds
Peak Temperature (TP) 260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)20 – 40 seconds
Ramp-down Rate 6°C/second max
Time 25°C to peak Temperature (TP) 8 minutes Max.
Do not exceed 260°C
Soldering Parameters
Product Characteristics
Lead Plating Pre-Plated Frame
Lead Material Copper Alloy
Substrate material Silicon
Body Material Molded Compound
Flammability UL Recognized compound meeting
flammability rating V-0.
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
Part Numbering System
Part Marking System
Part Number Package Marking Min. Order Qty.
SP8142-04UTG µDFN-10 C H4 3000
SP8143-06UTG µDFN-16 D H6 3000
Ordering Information
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©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA ® Diodes)
Revision: 03/02/18
TVS Diode Arrays (SPA
® Diodes)
Low Capacitance ESD Protection - SP814x Series
Application Information
Conventional Semiconductor-based common mode
filters’ performance has been proven to be lacking. While
excellent ESD components, the tradeoffs that designers
encounter for signal integrity prove to be insurmountable.
Fundamentally, the common mode filters do not filter the
unwanted signals (noise) fast enough, and create problems
with resistive and inductive loading as signals pass through
the components.
Odd harmonics add to signal strength, and create squarer
waves, which are easier for the downstream components
to detect either legal zeros or ones. Successive odd
harmonics in the passband make the signal stronger.
Noise generated from the fundamental frequencies does
not get attenuated fast enough to meaningfully improve
signal integrity, or lower the noise signature.
There are two options available (4 channel and 6 channel)
and both are housed in leadless µDFN packages so the
data lines can pass directly underneath the component to
reduce discontinuities and maintain signal integrity.
Semiconductor-based components which this product
are designed to replace have at least 6 ohms resistance,
contributing to signal amplitude compression which
negatively affect the eye height, and negatively affect
Signal Integrity and compliance testing.
Figure 1: Signal Strength of Fundamental
Signal Compression
Alternatives to Semiconductor-based Common Mode
Filtering
Using robust ESD protection, along with Signal Integrity
best layout practices, including burying the high speed
signals between two ground planes within the board
permit excellent Signal Integrity, at a lower total solution
cost. The SP8142/SP8143 are designed to be footprint
compatible with existing solutions offering filtering, and
can be used in the test scheme of testing without filtering (
using SP8142/8143) and with filtering (other solutions) and
comparing the results.
If the PCB layout is good, the engineer should expect to
see higher levels of Signal Integrity and equal levels of
radiated and conducted noise, at a lower pricepoint using
the ESD only solutions.
Alternatives to Semiconductor-based Common Mode
Filtering
Figure 2: Typical multilayer PCB stack up, best to route data between
ground planes to eliminate radiated noise and improve Signal Integrity.
Figure 3: Suppressing the odd harmonics off of the most popular interfaces
Interface Fundamental 3rd
Harmonic
3rd Harmonic
Strength (% orig.)
5th
Harmonic
5th Harmonic
Strength (% orig.)
MIPI External 208 MHz 724 MHz 4.5% 1040 MHz 1.6%
HDMI 1.4a 248 MHz 744 MHz 4.5% 1240 MHz 1.6%
HDMI 2.0 600 MHz 1800 MHz 4.5% 3000 MHz 1.6%
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©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA ® Diodes)
Revision: 03/02/18
TVS Diode Arrays (SPA
® Diodes)
Low Capacitance ESD Protection - SP814x Series
Package Dimensions — µDFN-10
µDFN-10 (2.2x1.35)
JEDEC MO-229
Symbol
Millimeters Inches
Min Nom Max Min Nom Max
A0.45 0.52 0.55 0.018 0.020 0.022
A1 0.00 0.02 0.05 0.000 0.001 0.002
A3 0.127 Ref 0.005 Ref
b0.15 0.20 0.25 0.006 0.008 0.010
D2.10 2.20 2.30 0.083 0.087 0.091
E1.25 1.35 1.45 0.049 0.053 0.057
e0.40 BSC 0.016 BSC
L0.40 0.50 0.60 0.016 0.020 0.024
Embossed Carrier Tape & Reel Specification — µDFN-10
Symbol Millimeters
A0 1.59 +/- 0.05
B0 2.45 +/- 0.05
D0 Ø1.50 + 0.10
D1 Ø 0.50 + 0.05
E1.75 +/- 0.10
F3.50 +/- 0.05
K0 0.69 +/- 0.05
P0 2.00 +/- 0.05
P1 4.00 +/- 0.10
P2 4.00 +/- 0.10
T0.25 +/- 0.02
W8.00 + 0.30 /- 0.10
8mm TAPE AND REEL
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©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA ® Diodes)
Revision: 03/02/18
TVS Diode Arrays (SPA
® Diodes)
Low Capacitance ESD Protection - SP814x Series
Embossed Carrier Tape & Reel Specification — µDFN-16
Symbol Millimeters
A0 1.58 +/- 0.10
B0 3.73 +/- 0.10
D0 Ø1.50 + 0.10
D1 Ø 0.60 + 0.05
E1.75 +/- 0.10
F5.50 +/- 0.05
K0 0.68 +/- 0.10
P0 2.00 +/- 0.05
P1 4.00 +/- 0.10
P2 4.00 +/- 0.10
T0.28 +/- 0.02
W12.00 + 0.30 /- 0.10
Package Dimensions — µDFN-16
µDFN-16 (3.5x1.35mm)
JEDEC MO-229
Symbol
Millimeters Inches
Min Nom Max Min Nom Max
A0.45 0.52 0.55 0.018 0.020 0.022
A1 0.00 0.02 0.05 0.000 0.001 0.002
A3 0.127 Ref 0.005 Ref
b0.15 0.20 0.25 0.006 0.008 0.010
D3.40 3.50 3.60 0.134 0.138 0.142
E1.25 1.35 1.45 0.049 0.053 0.057
e0.40 BSC 0.016 BSC
L0.40 0.50 0.60 0.016 0.020 0.024
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
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