30BQ100 Datasheet by SMC Diode Solutions

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457M137 Dino: snLu-iuNs RDHS SMC Small foot print, surface moutable Low forward voltage drop High frequency operation This is a Pb - Free Device All SMC parts are traceable to the water lot Additional testing can be oflered upon request Cathode O—K_O Anude Disk Drives Switching power supply Redundant power subsystems Converters Free-Wheeling diodes Reverse battery protection Battery Charging Guard ring [or enhanced ruggedness and long term Peak Repetitive Reverse Voltage Working Peak Rever DC Blocking Voltage VRW VR 50% duty cycle @Tc :1AB°C, rectangular waveform Current Peak One Cycle Non-Repetitive Surge Characteristics Symbol Condition Typ. Max. Units Fonlvard Voltage Drop" V @ 3 A, Pulse, T : 25 ”C 0.76 0.79 @ 6 A, Pulse, TJ : 25 ”C - 0.90 V @ 3 A, Pulse, T :125 ”C 0.60 0.62 @ 6 A, Pulse, TJ :125°C - 0.70 Reverse Current“ lm @VR : Rated Va. Pulse, TJ : 25 “C 00001 0.5 mA lnz @VR : Rated VR. Pulse, Tl : 100 DC 004 5 mA Junction Capacitance C @VR : 5V, T : 25 “C fSlG : 1MHZ Series inductance L Measured lead to lead 5 mm from package body Voltage Rate of Change dv/dl » - 10.000 V/ps
Technical Data
Data Sheet N0676, Rev. A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
30BQ100
30BQ100 SCHOTTKY RECTIFIER
Characteristics
Symbol
Condition
Max.
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
-
100
V
Average Rectified Forward Current
IF (AV)
50% duty cycle @TC=148°C,
rectangular wave form
3.0
A
Peak One Cycle Non-Repetitive Surge
Current
IFSM
8.3 ms, half Sine pulse, TC=25°C
120
A
Characteristics
Symbol
Typ.
Max.
Units
Forward Voltage Drop*
VF1
0.76
-
0.79
0.90
V
VF2
0.60
-
0.62
0.70
V
Reverse Current*
IR1
0.0001
0.5
mA
IR2
0.04
5
mA
Junction Capacitance
CT
80
115
pF
Series Inductance
LS
3.0
-
nH
Voltage Rate of Change
dv/dt
-
10,000
V/s
* Pulse width < 300 µs, duty cycle < 2%
Features
Circuit Diagram
Applications
Maximum Ratings:
Electrical Characteristics:
Disk Drives
Switching power supply
Redundant power subsystems
Converters
Free-Wheeling diodes
Reverse battery protection
Battery Charging
Small foot print, surface moutable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
SMC
Dino: snLu'rvths RoHS ® — Characteristlcs Symbol Condltlon Speclflcatlon Unlts Junction Temperalure T » -55 to +175 “C Slorage Temperature T » -55 to +175 “C Typicai Thermai Resislance Junction lo Lead Typicai Thermai Resislance Junction lo Case Approximate Weighl wl » 0.21 9 Case Slyie SMC Typical Forward Characteristics Typical Reverse Characteristics 10‘ E 3 10° 75 , E 10 ‘ 10° 3 5 2 > 10’ <3 g="" m="" u.="" ‘-="" §="" ,,="" §="" 5="" 10="" 8="" §="" 2="" 5="" ma="" g="" 10“="" u.="" 9="" 10‘5="" g="" d="" 20="" 40="" so="" an="" 100="" 120="" g="" reverse="" voltage="" ,="" vr="" (v)="" typical="" junction="" capacitance="" 1="" 0‘2="" juncnon="" capacitance="" -="" ct="" (of)="" 10'3="" 01="" 02="" 03="" 0a="" 05="" or;="" 07="" ca="" 9="" 20="" 40="" so="" 30="" 100="" 120="" forward="" voltage="" dydp="" -="" v;="" (v)="" reverse="" voltage="" -="" \/r="" m="">
Technical Data
Data Sheet N0676, Rev. A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
30BQ100
Characteristics
Symbol
Condition
Specification
Units
Junction Temperature
TJ
-
-55 to +175
C
Storage Temperature
Tstg
-
-55 to +175
C
Typical Thermal Resistance Junction to
Lead
RJL
-
12
C/W
Typical Thermal Resistance Junction to
Case
RJA
DC operation
46
°C/W
Approximate Weight
wt
-
0.21
g
Case Style
SMC
Thermal-Mechanical Specifications:
Ratings and Characteristics Curves
/—\ ASMIEW man: snLunuNs Mechanical Dimen ns SMC RoHS ® |‘—a 4 Where xxxxx Is WWWL Devlce Package Shlpplng SCSJ XXXXX Mmmng 725m Euuxv resm UL 94er Millimeters Min. Max. A 5.90 6.10 B 8.20 8.40 C 2.40 2.60 E 1.40 1.60 F 7.60 7.70 P 7.90 8,10 P0 3.90 4,10 P1 3.90 4.10 W 15.80 16.20
Technical Data
Data Sheet N0676, Rev. A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
30BQ100
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
SYMBOL
Millimeters
Min.
Max.
A
5.90
6.10
B
8.20
8.40
C
2.40
2.60
d
1.40
1.60
E
1.40
1.60
F
7.60
7.70
P
7.90
8.10
P0
3.90
4.10
P1
3.90
4.10
T
-
0.600
W
15.80
16.20
Mechanical Dimensions SMC
SYMBOL
Millimeters
Inches
Min.
Max.
Min.
Max.
A
5.59
6.22
0.220
0.245
B
6.60
7.11
0.260
0.280
C
2.75
3.25
0.108
0.128
D
0.152
0.305
0.006
0.012
E
7.75
8.25
0.305
0.325
F
2.00
2.95
0.079
0.116
G
0.051
0.203
0.002
0.008
H
0.76
1.60
0.030
0.063
Ordering Information
Marking Diagram
Device
Package
Shipping
30BQ100
SMC (Pb-Free)
3000pcs / reel
Carrier Tape Specification SMC
Where XXXXX is YYWWL
S
SC3J = Part Name
YY = Year
WW = Week
L = Lot Number
CautionsMolding resin
Epoxy resin UL:94V-0
ssssssssssssss ROHS DISCLAIMER:
Technical Data
Data Sheet N0676, Rev. A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
30BQ100
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any
other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC -
Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party.
When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..

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