HMC5805ALS6 Datasheet by Analog Devices Inc.

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ANALOG DEVICES RFOUT/VDD iPACKAGE am mm
AMPLIFIERS - LINEAR & POWER - SMT
1
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
General Description
Features
Functional Diagram
The HMC5805ALS6 is a GaAs pHEMT MMIC Dis-
tributed Power Amplifier which operates between DC
and 40 GHz. The amplifier provides 11.5 dB of gain,
29 dBm output IP3 and +24 dBm of output power at
1 dB gain compression while requiring 175 mA from
a +10 V supply. The HMC5805ALS6 is ideal for EW,
ECM, Radar and test equipment applications. The
HMC5805ALS6 amplifier I/Os are internally matched
to 50 Ohms and the 6x6 mm SMT package is well
suited for automated assembly techniques.
High P1dB Output Power: 24.5 dBm
High Psat Output Power: 27 dBm
Gain: 11.5 dB
Output IP3: 29 dBm
Supply Voltage: +10 V @ 175 mA
16 Lead Ceramic 6x6 mm SMT Package: 36 mm2
Typical Applications
The HMC5805ALS6 is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 175 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range DC - 5 5 - 30 30 - 40 GHz
Gain 912.5 911. 5 11.5 dB
Gain Flatness ±1.0 ±0.75 ±0.75 dB
Gain Variation Over Temperature 0.01 0.02 0.025 dB/ °C
Input Return Loss 17 11 11 dB
Output Return Loss 18 13 9dB
Output Power for 1 dB Compression (P1dB) 19 25 18 24.5 23 dBm
Saturated Output Power (Psat) 27 27 26 dBm
Output Third Order Intercept (IP3) 34 29 26 dBm
Noise Figure 4.5 4 7 dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 175 175 175 mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.
ANALOG DEVICES SE For pnce, delivery, andlo place orders. Ana/0g names, In), One Technology Way, PO, Box 91175, Norwoad, MA 0206279106
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
2
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Noise Figure vs. Temperature
Input Return Loss vs. Temperature
P1dB vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
0 5 10 15 20 25 30 35 40 45 50
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25 30 35 40
+25C +85C -40C
GAIN (dB)
FREQUENCY (GHz)
16
18
20
22
24
26
28
30
0 5 10 15 20 25 30 35 40
+25C +85C -40C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
0 4 8 12 16 20 24 28 32 36 40
+25C +85C -40C
NOISE FIGURE(dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 5 10 15 20 25 30 35 40
+25C +85C -40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 4 8 12 16 20 24 28 32 36 40
+25C +85C -40C
RETURN LOSS (dB)
FREQUENCY (GHz)
ANALOG DEVICES
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
3
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Output IP3 vs.
Temperature @ Pout=12 dBm / Tone
Psat vs. Supply Voltage P1dB vs. Supply Current
Psat vs. Supply Current
P1dB vs. Supply Voltage Psat vs. Temperature
16
18
20
22
24
26
28
30
0 5 10 15 20 25 30 35 40
+8V +10V +11V
P1dB (dBm)
FREQUENCY (GHz)
16
18
20
22
24
26
28
30
0 5 10 15 20 25 30 35 40
+25C +85C -40C
Psat (dBm)
FREQUENCY (GHz)
16
18
20
22
24
26
28
30
0 5 10 15 20 25 30 35 40
+8V +10V +11V
Psat (dBm)
FREQUENCY (GHz)
16
18
20
22
24
26
28
30
0 4 8 12 16 20 24 28 32 36 40
125 mA 175 mA
P1dB (dBm)
FREQUENCY (GHz)
16
18
20
22
24
26
28
30
0 4 8 12 16 20 24 28 32 36 40
125 mA 175 mA
Psat (dBm)
FREQUENCY (GHz)
20
24
28
32
36
40
0 5 10 15 20 25 30 35 40
+25C +85C -40C
FREQUENCY (GHz)
IP3 (dBm)
ANALOG DEVICES E For pnce, delivery, andlo place orders. Ana/0g Dewces, Inc, one Technology Way, PO, Box 91175, Norwoad, MA 0206279106
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
4
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Power Compression @ 20GHz
Output IM3 @ Vdd=+8V
Output IM3 @ Vdd=+11V
Reverse Isolation vs. Temperature
Output IP3 vs. Supply Voltage
@ Pout=12 dBm / Tone
Output IM3 @ Vdd=+10V
20
24
28
32
36
40
0 5 10 15 20 25 30 35 40
+8V +10V +11V
FREQUENCY (GHz)
IP3 (dBm)
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10 12 14 16
2GHz
8GHz
14GHz
20GHz
24GHz
28GHz
30GHz
IM3 (dBc)
Pout/TONE (dBm)
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10 12 14 16
2 GHz
8 GHz
14 GHz
20 GHz
24 GHz
28 GHz
30 GHz
IM3 (dBc)
Pout/TONE (dBm)
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10 12 14 16
2 GHz
8 GHz
14 GHz
20 GHz
24 GHz
28 GHz
30 GHz
IM3 (dBc)
Pout/TONE (dBm)
-80
-70
-60
-50
-40
-30
-20
-10
0
0 4 8 12 16 20 24 28 32 36 40 44
+25C +85C -40C
ISOLATION (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
160
170
180
190
200
210
220
230
0 2 4 6 8 10 12 14 16 18
Idd
Pout Gain PAE
Pout(dBm), GAIN(dB), PAE(%)
Idd (mA)
INPUT POWER (dBm)
ANALOG DEVICES
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
5
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Power Dissipation @ 85C
Gain and Power vs. Supply Current
Gain and Power vs. Supply Voltage
Second Harmonics vs. Temperature @
Pout=14 dBm
Second Harmonics vs. Vdd
@ Pout=14 dBm Second Harmonics vs. Pout
5
10
15
20
25
30
8 9 10 11
GAIN(dB)
P1dB(dBm) Psat(dBm)
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
5
10
15
20
25
125 135 145 155 165 175
GAIN(dB)
P1dB(dBm) Psat(dBm)
Idd (mA)
0
1
2
3
0 3 6 9 12 15 18
4GHz
10GHz
20GHz
30GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
0
10
20
30
40
50
60
0 4 8 12 16 20 24
+25C +85C -40C
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
0 4 8 12 16 20 24
+8V +10V +11V
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
0 4 8 12 16 20 24
+4dBm
+6dBm
+8dBm
+10dBm
+12dBm
+14dBm
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
ANALOG DEVICES ._“5- 51“ ¢ ‘flJS cvlg I 5'” I. -4,“ INDI AT R x , Err —|nn asc C m C m L C vqutw am cm \W [0—530 550 smeEw L - m ‘—‘.55—> .wascf “a Fm pnce, delivery, and to place orders: Ana/Hg Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 0205279105
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
6
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) 12V
Gate Bias Voltage (Vgg1) -3 to 0 Vdc
Gate Bias Voltage (Vgg2)
For Vdd = 12V, Vgg2 = 5.5V
Id d >145mA
For Vdd between 8.5V to 11V,
Vgg2 = (Vdd - 6.5V) up to 4.5V
For Vdd < 8.5V,
Vgg2 must remain > 2V
RF Input Power (RFIN) 22 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 32.2 mW/°C above 85 °C) 2.89 W
Thermal Resistance
(channel to ground paddle) 31.1 °C/ W
Storage Temperature -65 to 150 °C
Operating Temperature -40 to 85 °C
ESD Sensitivity (HBM) Class1B Passed 500V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vdd
Outline Drawing
Table 1. Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Option Package Marking [1]
HMC5805ALS6 ALUMINA, WHITE Gold over Nickel MSL3 EP-16-2 H5805A
XXXX
HMC5805ALS6TR ALUMINA, WHITE Gold over Nickel MSL3 EP-16-2 H5805A
XXXX
[1] 4-Digit lot number XXXX
Vdd (V) Idd (mA)
+8 175
+10 175
+11 175
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd = 175 mA.
16-Terminal Ceramic Leadless Chip Carrier with Heat Sink [LCC_HS]
Dimensions shown in millimeters.
ANALOG DEVICES Acm :: #W 2 I RFDUT I & VDD
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
7
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Pin Number Function Description Interface Schematic
1, 2, 14
ACG2 Low frequency termination. Attach bypass
capacitor per application circuit herein.
ACG1 Low frequency termination. Attach bypass
capacitor per application circuit herein.
RFOUT & VDD
RF output for amplifier. Connect DC bias (VDD) network
to provide drain current (Idd). See application circuit
herein.
3VGG2
Gate control 2 for amplifier. Attach bypass
capacitors per application circuit herein. For normal
operation +3.5V should be applied to Vgg2.
6RFIN This pin is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
9VGG1
Gate control 1 for amplifier. Attach bypass
capacitors per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
10 ACG4 Low frequency termination. Attach bypass
capacitor per application circuit herein.
11 ACG3 Low frequency termination. Attach bypass
capacitor per application circuit herein.
5, 7, 13, 15 GND These pins and exposed ground paddle must be
connected to RF/DC ground.
4, 8, 12, 16 N/C
These pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
Pin Descriptions
ANALOG DEVICES J1 mm m, mm NOTE 1 m2 cu qur mm c L a mr vac: vnm For pnce, delivery, andlo place orders. Analog Dewces, Inc, one Technology Way, Ra Box 91175, Nam/00d, MA 0206279106
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
8
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 250 mA
Application Information
Application Circuit
BIASING PROCEDURES:
DC bias must be applied to the drain via an RF choke/inductor connection to the RFOUT/VDD pin. Gate bias must be applied to
VGG1 and VGG2. Capacitive bypassing is recommended for all of the DC bias pins and AC terminations to ground are recom-
mended for ACG1-ACG4, as shown in the Application Circuit.
The recommended bias sequence during power-up is as follows:
1. Set VGG1 to −2.0 V to pinch off the channels of the lower FETs.
2. Set VDD to 10.0 V. Because the lower FETs are pinched off, IDQ remains very low upon application of VDD.
3. Set VGG2 to 3.5 V.
3. Adjust VGG1 to be more positive until a quiescent drain current of 175 mA has been obtained.
4. Apply the RF input signal.
The recommended bias sequence during power-down is as follows:
1. Turn off the RF input signal.
2. Set VGG1 to −2.0 V to pinch off the channels of the lower FETs.
3. Set VGG2 to 0 V.
4. Set VDD to 0 V.
5. Set VGG1 to 0 V.
Power-up and power-down sequences may differ from the ones described, though care must always be taken to
ensure adherence to the values shown in the Absolute Maximum Ratings.
Unless otherwise noted, all measurements and data shown were taken using the typical application circuit as config-
ured on our evaluation board. The bias conditions shown in the specifications section are the operating points recom-
mended to optimize the overall performance. Operation using other bias conditions may provide performance that
differs from what is shown in this data sheet.
ANALOG DEVICES THRU CAL DEVICES 600-01732 : “ANALOG -00-@ a A Fv [ij [LU] WED) v f
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
9
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Analog Devices upon request.
Evaluation PCB
List of Materials for Evaluation EV1HMC5805ALS6 [1]
Item Description
J1, J2 PCB Mount K Connectors, SRI
J5, J6 DC Pins
C3 - C5 100 pF Capacitors, 0402 Pkg.
C8 - C11 0.01 μF Capacitors, 0603 Pkg.
C13, C15, C16 , C18 4.7 μF Capacitors, Case A Pkg.
R2 Zero Ohm Resistor, 0402 Pkg.
U1 HMC5805ALS6 Amplifier
PCB [2] 128996 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
ANALOG DEVICES e 1 v I? For prrce, delivery, andlo place orders. Analog Dewces, Inc, one Technology Way, Ra Box 91175, Nam/00d, MA 0206279106
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
10
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Theory of Operation
The HMC5805ALS6 is a GaAs, pHEMT, MMIC power amplifier. Its basic architecture is that of a cascode distributed
amplifier which allows for control of DC bias for a drain and two gates. The cascode distributed architecture uses a
fundamental cell consisting of a stack of two field effect transistors (FETs) with the source of the upper FET connected
to the drain of the lower FET. The fundamental cell is then duplicated several times, with a transmission line feed-
ing the RFIN signal to the gates of the lower FETs and a separate transmission line interconnecting the drains of the
upper FETs and routing the amplified signal to the RFOUT/VDD pin. Additional circuit design techniques are used
around each cell to optimize the overall performance for broadband operation. The major benefit of this architecture
is that high performance is maintained across a bandwidth far greater than what a single instance of the fundamen-
tal cell would provide. Additionally, ACG1-ACG4 provide access to internal nodes which, when provided with the
recommended AC terminations to ground, ensure that the overall response remains flat across the widest possible
frequency range. A simplified Schematic of Architecture is shown in below.
Schematic of Architecture
RFIN
VGG2
ACG2
RFOUT/VDD
T-Line
T-Line
VGG1
ACG4ACG3
ACG1

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