AOT5B65M1, AOB5B65M1 Datasheet by Alpha & Omega Semiconductor Inc.

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ALPHA&OMEGA SEMICONDUCTOR
AOT5B65M1/AOB5B65M1
650V, 5A Alpha IGBT
TM
With soft and fast recovery anti-parallel diode
General Description Product Summary
V
CE
I
C
(T
C
=100°C) 5A
V
CE(sat)
(T
J
=25°C) 1.57V
Applications
• Motor Drives
• Home appliance applications such as refrigerators
and washing machines
• Fan, Pumps, Vacuum Cleaner
• Other Hard Switching Applications
• Latest AlphaIGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(SAT) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
650V
TO-263
D2PAK
C
E
G
G
C
G
C
E
TO-220
Symbol
V
CE
V
GE
I
CM
I
LM
Diode Pulsed Current, Limited by T
Jmax
I
FM
t
SC
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θ
JC
R
θ
JC
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Minimum Order QuantityPackage Type Form
Continuous Diode
Forward Current
T
C
=25°C I
F
10 A
T
C
=100°C
Continuous Collector
Current
T
C
=25°C
5
10
5
±30
I
C
Turn off SOA, V
CE
650V, Limited by T
Jmax
Pulsed Collector Current, Limited by T
Jmax
Gate-Emitter Voltage
T
C
=100°C
Parameter
15 A
15
Maximum Junction-to-Ambient
5µs
T
C
=100°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds °C
Power Dissipation P
D
Short circuit withstanding time
1)
V
GE
= 15V, V
CC
400V, T
J
175°C
Junction and Storage Temperature Range
T
C
=25°C
Thermal Characteristics
Maximum Diode Junction-to-Case
°C/W1.8Maximum IGBT Junction-to-Case
V
UnitsParameter
Absolute Maximum Ratings T
A
AOT5B65M1/AOB5B65M1
Collector-Emitter Voltage 650
Orderable Part Number
AOB5B65M1
15
AOT5B65M1/AOB5B65M1
W
Units
A
4.7
300
-55 to 175
83
°C/W65
42
°C
°C/W
V
A
A
AOT5B65M1 TO220 Tube 1000
TO263 Tape & Reel 800
G
AOB5B65M1
E
G
AOT5B65M1
Rev.1.0: April 2015 www.aosmd.com Page 1 of 9
Symbol Min Typ Max Units
BV
CES
Collector-Emitter Breakdown Voltage 650 - - V
T
J
=25°C - 1.57 1.98
T
J
=125°C - 1.87 -
T
J
=175°C - 2.05 -
T
J
=25°C - 1.8 2.25
T
J
=125°C - 1.79 -
T
J
=175°C - 1.73 -
V
GE(th)
Gate-Emitter Threshold Voltage - 5.1 - V
T
J
=25°C - - 10
T
J
=125°C - - 100
T
J
=175°C - - 5000
I
GES
Gate-Emitter leakage current - - ±100 nA
g
FS
- 4.1 - S
C
ies
- 348 - pF
C
oes
- 36 - pF
C
res
- 13 - pF
Q
g
- 14 - nC
Q
ge
- 3 - nC
Q
gc
- 6.5 - nC
I
C(SC)
- 30 - A
R
g
- 6 -
t
D(on)
- 8.5 - ns
t
r
- 13 - ns
t
D(off)
- 106 - ns
t
f
- 18 - ns
E
on
- 0.08 - mJ
E
off
- 0.07 - mJ
E
total
- 0.15 - mJ
t
rr
- 195 - ns
Q
rr
- 0.24 - µC
I
rm
- 2.78 - A
t
D(on)
- 7 - ns
t
r
- 14 - ns
t
D(off)
- 130 - ns
t
f
- 31 - ns
E
on
- 0.09 - mJ
E
off
- 0.12 - mJ
E
total
- 0.21 - mJ
t
rr
- 273 - ns
Q
rr
- 0.42 - µC
I
rm
- 3.6 - A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
J
=175°C
I
F
=5A, dI/dt=200A/µs, V
CC
=400V
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
Turn-On DelayTime
T
J
=175°C
V
GE
=15V, V
CC
=400V, I
C
=5A,
R
G
=60
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Diode Reverse Recovery Time
Turn-Off Energy
Total Switching Energy
Turn-Off Energy
Turn-On Rise Time
Turn-On DelayTime
SWITCHING PARAMETERS, (Load Inductive, T
J
=175°C)
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
T
J
=25°C
I
F
=5A, dI/dt=200A/µs, V
CC
=400V
Turn-Off Delay Time T
J
=25°C
V
GE
=15V, V
CC
=400V, I
C
=5A,
R
G
=60
Total Switching Energy
Turn-Off Fall Time
Turn-On Energy
Gate to Collector Charge
Gate to Emitter Charge V
GE
=15V, V
CC
=520V, I
C
=5A
SWITCHING PARAMETERS, (Load Inductive, T
J
=25°C)
Short circuit collector current V
GE
=15V, V
CC
=400V,
t
sc
5us, T
J
175°C
Total Gate Charge
Gate resistance V
GE
=0V, V
CC
=0V, f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Reverse Transfer Capacitance
V
GE
=0V, V
CC
=25V, f=1MHz
V
CE
=20V, I
C
=5A
V
CE
=0V, V
GE
=±30V
Forward Transconductance
V
CE(sat)
I
C
=1mA, V
GE
=0V, T
J
=25°C
V
GE
=15V, I
C
=5A V
V
CE
=650V, V
GE
=0V
V
GE
=0V, I
C
=5A V
Collector-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
I
CES
Zero Gate Voltage Collector Current
V
F
Diode Forward Voltage
DYNAMIC PARAMETERS
µA
V
CE
=5V, I
C
=1mA
Rev.1.0: April 2015 www.aosmd.com Page 2 of 9
ALPHA & OMEGA 'MIISONI) (/lT'I'OR TYPICAL ELECTRICAL AND THERMAL CHARACTERIS 9V 9V V 21V! V (VF
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 1 2 3 4 5
IF(A)
V
(V)
25°C
175°C
-40°C
0
5
10
15
20
25
01234567
IC(A)
VCE(V)
Figure 1: Output Characteristic
(Tj=25°C )
9
V
20V 17V
15V
11V
VGE= 7V
13V
0
3
6
9
12
15
3 6 9 12 15
IC (A)
V
GE
(V)
175°C
25°C
-40°C
VCE=20V
0
5
10
15
20
25
0 1 2 3 4 5 6 7
IC(A)
VCE(V)
Figure 2: Output Characteristic
(Tj=175°C )
V
GE
=7V
9V
20V
17V
15V
11V
13V
V
F
(V)
Figure 4: Diode Characteristic
V
GE
(V)
Figure 3: Transfer Characteristic
0
1
2
3
4
5
0 25 50 75 100 125 150 175
VCE(sat)
(V)
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
IC=10A
IC=2.5A
IC=5A
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150 175
VSD (V)
Temperature (°C )
Figure 6: Diode Forward voltage vs. Junction
Temperature
10A
5A
IF=1A
Rev.1.0: April 2015 www.aosmd.com Page 3 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTER mu m I. (A) m A ms 100 |s Dc I Ims 10m; 1 10 me man VsM Fumes: Forward Bil, save Onaafina Ana (n-my‘qsvp
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 4 8 12 16 20
VGE(V)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VCE=520V
IC=5A
0
20
40
60
80
100
25 50 75 100 125 150 175
Power Disspation
(W)
TCASE(°C)
Figure 10: Power Disspation as a Function of Case
1
10
100
1000
10000
0 8 16 24 32 40
Capacitance (pF)
VCE(V)
Figure 8: Capacitance Characteristic
Cies
Cres
Coes
0
2
4
6
8
10
12
25 50 75 100 125 150 175
Current rating IC
(A)
TCASE(°C)
Figure 11: Current De-rating
1E-09
1E-08
1E-07
1E-06
1E-05
1E-04
1E-03
0 25 50 75 100 125 150 175
ICE(S) (A)
Temperature (°C )
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
VCE=650V
VCE=520V
Rev.1.0: April 2015 www.aosmd.com Page 4 of 9
ALPHA & OMEGA SEMIC 0ND UCTOR Figur: «5: Switching mm vs.T‘ Figure 15: v ,VS. 1
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
10
100
1000
10000
2 4 6 8 10
Switching Time (nS)
IC (A)
Figure 13: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=60)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
0 100 200 300 400 500 600
Switching Time (nS)
Rg()
Figure 14: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=5A)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
25 50 75 100 125 150 175
Switching Time (nS)
TJ (°C)
Figure 15: Switching Time vs.T
j
Td(off)
Tf
Td(on)
Tr
1
2
3
4
5
6
7
0 25 50 75 100 125 150 175
VGE(TH)(V)
TJ(°C)
Figure
16
: V
vs. T
Figure 15: Switching Time vs.T
j
(VGE=15V,VCE=400V,IC=5A,Rg=60)
Figure
16
: V
GE(TH)
vs. T
j
Rev.1.0: April 2015 www.aosmd.com Page 5 of 9
25 50 75 mo 125 150 175 mm 250 300 350 400 450 500
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
0.1
0.2
0.3
0.4
0.5
0.6
2 4 6 8 10
SwitchIng Energy (mJ)
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=60)
Eoff
Eon
Etotal
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 100 200 300 400 500 600
Switching Energy (mJ)
Rg()
Figure 18: Switching Loss vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=5A)
Eoff
Eon
Etotal
0
0.05
0.1
0.15
0.2
0.25
0.3
25 50 75 100 125 150 175
Switching Energy (mJ)
Eoff
Eon
Etotal
0
0.05
0.1
0.15
0.2
0.25
0.3
200
250
300
350
400
450
500
Switching Energ y (mJ)
Eoff
Eon
Etotal
25
50
75
100
125
150
175
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=5A,Rg=60)
200
250
300
350
400
450
500
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=175°C,VGE=15V,IC=5A,Rg=60)
Rev.1.0: April 2015 www.aosmd.com Page 6 of 9
ALPHA & OMEGA SEMICONDUCTOR \\ 7; 25C di/dl mus) dildl (Mus)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
0
80
160
240
320
400
2 4 6 8 10
S
Trr (nS)
IF(A)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µs)
175°C
25°C
175°C
25°C
Trr
S
0
5
10
15
20
25
0
160
320
480
640
800
2 4 6 8 10
Irm(A)
Qrr (nC)
IF(A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µs)
25°C
175°C
175°C
25°C
Qrr
Irm
0
7
14
21
28
35
0
70
140
210
280
350
100 200 300 400 500 600
S
Trr (nS)
di/dt (A/
µ
S)
25
°
C
175°C
25°C
175°C
Trr
S
0
5
10
15
20
25
30
0
100
200
300
400
500
600
100 200 300 400 500 600
Irm(A)
Qrr (nC)
di/dt (A/
µ
S)
175°C
25°C
175°C
25°C
Qrr
Irm
di/dt (A/
µ
S)
Figure 24: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
(VGE=15V,VCE=400V,IF=5A)
di/dt (A/
µ
S)
Figure 23: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
(VGE=15V,VCE=400V,IF=5A)
Rev.1.0: April 2015 www.aosmd.com Page 7 of 9
ALPHA & OMEGA SEMICONDUCTOR
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.8°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PDM
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PDM
Rev.1.0: April 2015 www.aosmd.com Page 8 of 9
ALPHA & OMEGA SEMICONDUCTOR L I:‘ C: DUT man V“ SSW—fl Vge n n Vge Vge 10V > Gale Charge smvn- Vge m. w. . ml: In m k m ‘n “ mm Vce m vg. Vge m. w. II: m: Vce ‘m. mam-m. WWW ‘ ._ |. 1" z 1:
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.1.0: April 2015 www.aosmd.com Page 9 of 9

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