TN5050H-12WY Datasheet by STMicroelectronics

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I 'l iiie.clugmented 50 A - 1200 V automotive grade SCR Thyristor TO-247 un—insulated December 2017 Doc|D026846 Rev 3 1/9 This is information on a product in full production.
December 2017
DocID026846 Rev 3
1/9
This is information on a product in full production.
www.st.com
TN5050H-12WY
50 A - 1200 V automotive grade SCR Thyristor
Features
AEC-Q101 qualified
On-state current: 50 ARMS
Blocking voltage: +/- 1200 V
High static and dynamic commutation:
dI/dt = 200 A/μs
dV/dt = 1000 V/μs
IGT = 50 mA
ECOPACK®2 compliant component
Applications
Automotive
On board, off board battery charger
Solar, wind renewable energy inverters
Solid state relays
UPS
Bypass
ICL (inrush current limiter)
Battery charger
Industrial welding systems
Voltage control rectifier
Description
Available in TO-247 high power package, the
TN5050H-12WY autograde is suitable in
applications such as automotive / stationary
battery charger, renewable energy generator,
interruptible power supply, solid state relay,
welding equipment and motor drive applications.
Its power switching, voltage robustness and
power dissipation performances are the key
features for functions such as a 80 A AC switch,
an AC phasing inverter and an AC-DC controlled
rectifier bridge.
The TN5050H-12WY is an automotive grade
product and offers a superior performance in
surge current handling, thermal cooling
capabilities and overvoltage robustness.
Table 1: Device summary
Symbol
Value
50 A
1200 V
1300 V
50 mA
150 °C
K
A
G
A
K
G
Datasheet - production data
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Characteristics
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1 Characteristics
Table 2: Absolute ratings (limiting values, Tj = 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
VDRM / VRRM
Repetitive off-state voltage (50-60 Hz)
Tj = 150 °C
1200
V
IT(RMS)
RMS on-state current (180 ° conduction angle)
TC = 137 °C
50
A
IT(AV)
Average on-state current (180 ° conduction angle)
32
IT(RMS)
RMS on-state current (180 ° conduction angle)
TC = 125 °C
80
A
IT(AV)
Average on-state current (180 ° conduction angle)
51
ITSM(1)
Non repetitive surge peak on-state current,
Tj initial = 25 °C
tp = 8.3 ms
633
A
tp = 10 ms
580
dl/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
f = 50 Hz
Tj = 150 °C
200
A/µs
IGM
Peak forward gate current
Tj = 150 °C
tp = 20 µs
8
A
PG(AV)
Average gate power dissipation
Tj = 150 °C
1
W
Tstg
Storage junction temperature range
-40 to +150
°C
Tj
Operating junction temperature
-40 to +150
°C
Notes:
(1)ST recommend I²t value for fusing = 1680 A²s for Tj = 25 °C and tP = 10 ms
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Characteristics
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Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
Test Conditions
Value
Unit
IGT
VD = 12 V, RL = 33 Ω
Min.
10
mA
Max.
50
VGT
VD = 12 V, RL = 33 Ω
Max.
1
V
VGD
VD = 2/3 x VDRM, RL = 3.3 kΩ
Tj = 150 °C
Min.
0.15
V
IH
IT = 500 mA, gate open
Max.
100
mA
IL
IG = 1.2 x IGT
Max.
125
mA
tgt
IT = 50 A , VD = VDRM, IG = 200 mA, dIG/dt = 0.2 A/µs
Typ.
3
µs
dV/dt
VD = 2/3 x VDRM, gate open
Tj = 150 °C
Min.
1000
V/µs
tq
IT = 33 A, VD = 800 V, VR = 75 V, tP = 100 µs,
dlT/dt = 10 A/µs, dVD/dt = 20 V/µs,
Tj = 150 °C
Typ.
150
µs
VTM
ITM = 100 A, tP = 380 µs
Max.
1.55
V
VTO
Threshold voltage
Tj = 150 °C
Max.
0.88
V
RD
Dynamic resistance
Tj = 150 °C
Max.
6
IDRM/IRRM
VD = VDRM, VR = VRRM
Tj = 25 °C
Max.
5
µA
Tj = 125 °C
Max.
3
mA
Tj = 150 °C
Max.
7.5
mA
IDSM/IRSM
VD = VDSM, VR = VRSM
Tj = 25 °C
Max.
10
µA
Table 4: Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (DC, max.)
0.3
°C/W
Rth(j-a)
Junction to ambient
50
°C/W
4/9 255‘ VGTITfl/IGT‘ VGTITJ :25 ’C] 1 5 ‘cr «0 05 0.0 740 725 a 25 an 75 «on 125 150 Doc|D026846 Rev 3 ‘1]
Characteristics
TN5050H-12WY
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1.1 Characteristics (curves)
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Correlation between maximum average
power dissipation and maximum allowable
temperatures (Tamb and Tcase)
Figure 3: Average and D.C. on-state current versus
case temperature
Figure 4: Average and D.C. on-state current versus
ambient temperature
Figure 5: Relative variation of thermal impedance
junction to case and junction to ambient versus
pulse duration
Figure 6: Relative variation of gate trigger current
and gate voltage versus junction temperature
(typical values)
α = 30 °
α = 60 °
α = 90 °
α = 120 °
α = 180 ° DC
0 105 15 2520 30 4035
5
10
15
20
25
30
35
40
45
50
55
0
P(W)
IT(AV)(A)
α
360 °
0
10
20
30
40
50
0 25 50 75 100 125 150
133.5
136
138.5
141
143.5
146
148.5
Rth(assembly) 3 °C/W
P(AV)(W) TC(°C)
Rth(assembly) 1 °C/W
Rth(assembly) 0 °C/W
TO-247
Rth(assembly) 2 °C/W
Ta(°C)
0
5
10
15
20
25
30
35
40
45
50
55
0 25 50 75 100 125 150
α = 30 °
α = 60 °
α = 90 °
α = 120 °
α = 180 °
DC
Tc(°C)
IT(AV)(A)
IT(AV)(A)
DC
Ta(°C)
0.0025 50 75 100 125 150
0.5
3.5
4.0
2.5
3.0
2.0
1.5
1.0
α = 180 °
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
K = [Zth/ Rth]
Zth(j-a)
Zth(j-c)
tP(s)
E] 20 4w IH‘ L[T]/\H‘IL[T:25’C] \ H 75 70 650 600 550 500 450 400 350 300 250 200 150 100 50 me 125 150 Doc|D025846 Rev 3 5/9
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Figure 7: Relative variation of holding and latching
current versus junction temperature (typical
values)
Figure 8: Surge peak on-state current versus
number of cycles
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse (tp < 10 ms)
Figure 10: On-state characteristics (maximum
values)
Figure 11: Relative variation of leakage current versus junction temperature for different values of
blocking voltage (typical values)
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
1 10 100 1000
Non repetitive Tj= 25 °C
Number of cycles
ITSM(A)
Repetitive Tc= 137 °C
t =10ms
p
One cycle
10
100
1000
10000
0.01 0.10 1.00 10.00
Tjinitial = 25 °C
ITSM
ITSM(A)
dl/dt limitation: 200 A/µs
Tp(ms)
1
10
100
1000
0.0 1.0 2.0 3.0 4.0
Tj= 150 °C
ITM(A)
VTM(V)
Tj= 25 °C
Tjmax:
Vt0 = 0.88 V
Rd = 6 mΩ
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
Tj(°C)
VDRM = VRRM = 1200 V
VDRM = VRRM = 1000 V
IDRM, IRRM [ Tj;VDRM , VRRM] / IDRM / IRRM [ 150 °C ;1200 V]
informatxon 6/9 Heat-sink glane D00|D025846 Rev 3
Package information
TN5050H-12WY
6/9
DocID026846 Rev 3
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Epoxy meets UL94, V0
Lead-free package
2.1 TO-247 package information
Figure 12: TO-247 package outline
mformation Doc|D025846 Rev 3 7/9
TN5050H-12WY
Package information
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7/9
Table 5: TO-247 package mechanical data
Ref.
Dimensions
Millimeters
Inches(1)
Min.
Max.
Min.
Max.
A
4.85
5.15
0.1909
0.2028
A1
2.20
2.60
0.0866
0.1024
b
1.00
1.40
0.0394
0.0551
b1
2.00
2.40
0.0787
0.0945
b2
3.00
3.40
0.1181
0.1339
c
0.40
0.80
0.0157
0.0315
D(2)
19.85
20.15
0.7815
0.7933
E
15.45
15.75
0.6083
0.6201
e
5.30
5.45
5.60
0.2087
0.2146
0.2205
L
14.20
14.80
0.5591
0.5827
L1
3.70
4.30
0.1457
0.1693
L2
18.50 typ.
0.7283 typ.
ØP(3)
3.55
3.65
0.1398
0.1437
ØR
4.50
5.50
0.1772
0.2165
S
5.30
5.50
5.70
0.2087
0.2165
0.2244
Notes:
(1)Inches dimensions given for reference only
(2)Dimension D plus gate protrusion does not exceed 20.5 mm
(3)Resin thickness around the mounting hole is not less than 0.9 mm.
information 3/9 Doc|D026846 Rev 3 ‘1]
Ordering information
TN5050H-12WY
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3 Ordering information
Table 6: Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
TN5050H-12WY
TN5050H12Y
TO-247
4.43 g
30
Tube
4 Revision history
Table 7: Document revision history
Date
Revision
Changes
07-Jan-2015
1
Initial release.
17-Oct-2017
2
Updated TO-247 package information.
20-Dec-2017
3
Updated Table 5: "TO-247 package mechanical data".
E] DOCID026846 Rev 3 9/9
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