GVD Series Datasheet by Sprague-Goodman

View All Related Products | Download PDF Datasheet
SPRQGUE Goonmnn
Sprague-Goodman ENGINEERING BULLETIN
SG-950
VARACTOR DIODES
Sprague-Goodman Electronics, Inc.
1700 SHAMES DRIVE, WESTBURY, NY 11590
TEL: 516-334-8700 • FAX: 516-334-8771
E-MAIL: info@spraguegoodman.com
SPRQGUE Goonmnn
2
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
• Low voltage wireless phase locked loop VCOs
• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 /0.1.
Total Total Total Model Number
Capacitance Capacitance Capacitance Q min
CT(pF) at –2 V CT(pF) at –7 V CT(pF) at –10 V at –2 V Common
min max typ min max (10 MHz) Single Cathode
46 68 6.1 4.2 5.2 75 GVD1401-001
100 150 13.0 8.6 10.6 50 GVD1404-001
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode style
• Available in chip form (add suffix -000)
APPLICATIONS
• TCXOs, VCXOs
• Low voltage wireless open loop VCOs
0.115 ± 0.005
2.93 ± 0.13 0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.075 ± 0.005
1.91 ± 0.13
0.091 ± 0.008
2.3 ± 0.2
0.021 ± 0.003
0.53 ± 0.08
0.040 ± 0.007
1.03 ± 0.18
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TOP VIEW
(SINGLE) (COMMON CATHODE)
0.035
0.90
0.031
0.80
0.079
2.0
0.037
0.95
0.037
0.95
0.016 ± 0.002
0.41 ± 0.04
TYP
TYP
1
PAD LAYOUT
2
3
12
3
TYP
TYP
500
100
50
10
5
0.5 12345610 20 30 50
REVERSE VOLTAGE
(VOLTS)
GVD1404-001
GVD1401-001
CT (pF)
* *w L7 'L
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
VARACTOR DIODES SG-950
3
SUPER HYPERABRUPT TUNING VARACTOR DIODES
• Low voltage wireless phase locked loop VCOs
• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004/0.1.
Capacitance Capacitance Model Number
Total Ratio Ratio
Capacitance CTat –1 V CTat –1 V Q min
CT(pF) at –1 V CTat –3 V CTat –6 V at –4 V Common
min max min max min max (50 MHz) Single Cathode
3.00 3.60 1.4 1.9 2.6 3.3 1500 GVD20433-001 GVD20433-004
5.85 7.15 1.6 2.0 2.8 3.4 1200 GVD20434-001 GVD20434-004
10.35 12.65 1.6 2.0 2.9 3.4 1000 GVD20435-001 GVD20435-004
15.50 18.50 1.6 2.0 3.0 3.5 900 GVD20436-001 GVD20436-004
45.00 54.00 1.6 2.0 3.0 3.5 750 GVD20437-001 ---
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode Style
• Available in chip form (add suffix -000)
APPLICATIONS
• TCXOs, VCXOs
• Low voltage wireless open loop VCOs
0.115 ± 0.005
2.93 ± 0.13 0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.075 ± 0.005
1.91 ± 0.13
0.091 ± 0.008
2.3 ± 0.2
0.021 ± 0.003
0.53 ± 0.08 0.040 ± 0.007
1.03 ± 0.18
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TOP VIEW
(SINGLE) (COMMON CATHODE)
0.035
0.90
0.031
0.80
0.079
2.0
0.037
0.95
0.037
0.95
0.016 ± 0.002
0.41 ± 0.04
TYP TYP
1
PAD LAYOUT
2
3
12
3TYP
TYP
100.0
10.0
5.0
1.0
0.5 0.3 12345610 20 30 50
REVERSE VOLTAGE
(VOLTS)
2.0
3.0
0.5
GVD20436-001
GVD20435-001
GVD20434-001
CT (pF)
50.0
SPRQGUE Goonmnn
4
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
VARACTOR DIODES SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
• Low voltage wireless phase locked loop VCOs
• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004/0.1.
Total Total Total Model Number
Capacitance Capacitance Capacitance Q min
CT(pF) at –1 V CT(pF) at –2.5 V CT(pF) at –8 V at –4 V Common
min min max max (50 MHz) Single Cathode
13.0 6.5 10.0 2.7 750 GVD20442-001 GVD20442-004
13.0 6.5 10.0 2.7 350 GVD20443-001 GVD20443-004
17.0 8.5 13.0 3.2 600 GVD20444-001 GVD20444-004
17.0 8.5 13.0 3.2 300 GVD20445-001 GVD20445-004
26.0 13.0 20.0 4.7 500 GVD20446-001 ---
26.0 13.0 20.0 4.7 225 GVD20447-001 ---
36.0 18.0 27.0 6.2 400 GVD20448-001 ---
36.0 18.0 27.0 6.2 150 GVD20449-001 ---
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode style
• Available in chip form (add suffix -000)
APPLICATIONS
• TCXOs, VCXOs
• Low voltage wireless open loop VCOs
Total Total Total Model Number
Capacitance Capacitance Capacitance Q min
CT(pF) at –1 V CT(pF) at –2.5 V CT(pF) at –4 V at –4 V Common
min min max max (50 MHz) Single Cathode
9.0 4.5 6.5 3.0 400 GVD20450-001 GVD20450-004
0.115 ± 0.005
2.93 ± 0.13 0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.075 ± 0.005
1.91 ± 0.13
0.091 ± 0.008
2.3 ± 0.2
0.021 ± 0.003
0.53 ± 0.08 0.040 ± 0.007
1.03 ± 0.18
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TOP VIEW
(SINGLE) (COMMON CATHODE)
0.035
0.90
0.031
0.80
0.079
2.0
0.037
0.95
0.037
0.95
0.016 ± 0.002
0.41 ± 0.04
TYP TYP
1
PAD LAYOUT
2
3
12
3TYP
TYP
50.0
10.0
5.0
1.0
0.5 0.3 12345610 20 30
REVERSE VOLTAGE
(VOLTS)
2.0
3.0
0.5
CT (pF)
50
GVD20448-001
GVD20446-001
GVD20444-001
GVD20450-001
é LA
D TYP
M
L
TERMINATIONS (GOLD PLATED)
BOTTOM VIEW
MOUNTING PAD LAYOUT
A
TOP VIEW
B
DOT INDICATES
CATHODE END
C1
SIDE VIEW FOR - 01__
EPOXY
ENCAPSULANT
EPOXY
ENCAPSULANT C2
SIDE VIEW FOR - 11__
K TYP
5
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
Total Total Total Total
Capacitance Capacitance Capacitance Capacitance Q min
CT(pF) at 1 V CT(pF) at 2.5 V CT(pF) at 4 V CT(pF) at 8 V at 4 V Model
min min max max max (50 MHz) Number*
36.0 18.0 27.0 12.0 6.2 400 GVD90001 ___
26.0 13.0 20.0 9.0 4.7 500 GVD90002 ___
17.0 8.5 13.0 6.0 3.2 600 GVD90003 ___
13.0 6.5 10.0 4.5 2.7 750 GVD90004 ___
9.0 4.5 6.5 3.0 1.7 900 GVD90005 ___
4.0 2.0 3.0 1.5 1.0 1200 GVD90006 ___
1.8 1.1 1.5 0.8 0.55 1400 GVD90007 ___
1.2 0.8 1.1 0.6 0.45 1600 GVD90008 ___
0.6 0.5 0.8 0.4 0.35 1800 GVD90009 ___
SUPER HYPERABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
APPLICATIONS
PCS WANS DECT
GSM TAGS AMPS
Cellular
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
Maximum reverse leakage current at 10 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: 65°C to +125°C
Storage temperature: 65°C to +125°C
All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.003/0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
package can be used for multiple diode designs (such as common cathode or common anode). Contact factory
for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
FEATURES
Mesa epitaxial silicon construction
Silicon dioxide passivated
Fits footprint for SOD-323, SOD-123 and smaller
High frequency (VHF to 8 GHz)
Available on carrier and reel
Available in chip form (add suffix -000)
Two package styles including lower cost, flat
top version
Alternate notched termination version available,
contact factory for outline drawing
VARACTOR DIODES SG-950
Dash
No. ABC
1C2DKLM
- 011 0.10 0.050 0.035 0.050 0.015 ± 0.004 0.030 0.070 0.112
- 111 2.5 1.3 0.89 1.3 0.38 ± 0.1 0.76 1.8 2.84
- 012 0.12 0.060 0.035 0.050 0.020 ± 0.005 0.030 0.080 0.132
- 112 3.0 1.5 0.89 1.3 0.51 ± 0.1 0.76 2.0 3.35
- 013 0.200 0.100 0.035 0.050 0.020 ± 0.005 0.030 0.120 0.212
- 113 5.08 2.54 0.89 1.3 0.51 ± 0.1 0.76 3.05 5.38
- 014 0.075 0.050 0.035 0.050 0.015 ± 0.004 0.030 0.070 0.087
- 114 1.9 1.3 0.89 1.3 0.38 ± 0.1 0.76 1.8 2.2
- 015 0.062 0.042 0.030 0.050 0.011 ± 0.003 0.020 0.060 0.072
- 115 1.6 1.1 0.76 1.3 0.28 ± 0.08 0.51 1.5 1.8
* For complete model number, select Dash No. from chart below.
SPRQGUE Goonmnn
VARACTOR DIODES SG-950
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
6
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
Microwave Hyperabrupt Series
High linearity VCOs
Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 20 V min
Maximum reverse leakage current at 20 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: 55°C to +125°C
Storage temperature: 55°C to +125°C
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 /0.1.
Total Total Total Model Number
Capacitance Capacitance Capacitance Q min
CT(pF) at 0 V CT(pF) at 4 V CT(pF) at 20 V at 4 V Common
min min max min max (50 MHz) Single Cathode
2.7 1.25 1.75 0.43 0.57 1000 GVD30422-001 GVD30422-004
4.2 1.70 2.50 0.52 0.72 850 GVD30432-001 GVD30432-004
6.3 2.20 3.80 0.68 0.96 700 GVD30442-001 GVD30442-004
11.9 3.70 5.50 0.94 1.30 600 GVD30452-001 GVD30452-004
26.0 9.00 11.00 1.90 2.50 400 GVD30462-001 GVD30462-004
FEATURES
Mesa epitaxial silicon construction
Silicon dioxide passivated
Superior wide range linear characteristics
High tuning ratios
High Q
Available in common cathode style
Available in chip form (add suffix -000)
APPLICATIONS
Low phase noise VCOs
Phase locked loop VCOs
0.115 ± 0.005
2.93 ± 0.13 0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.075 ± 0.005
1.91 ± 0.13
0.091 ± 0.008
2.3 ± 0.2
0.021 ± 0.003
0.53 ± 0.08
0.040 ± 0.007
1.03 ± 0.18
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TOP VIEW
(SINGLE) (COMMON CATHODE)
0.035
0.90
0.031
0.80
0.079
2.0
0.037
0.95
0.037
0.95
0.016 ± 0.002
0.41 ± 0.04
TYP
TYP
1
PAD LAYOUT
2
3
12
3
TYP
TYP
50.0
10.0
5.0
1.0
0.5
0.3 12345610 20 30
REVERSE VOLTAGE
(VOLTS)
2.0
3.0
0.5
GVD30432-001 GVD30452-001
GVD30422-001
CT (pF)
50
00000
7
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
VHF/UHF Hyperabrupt Series
High linearity VCOs
Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 25 V min
Maximum reverse leakage current at 20 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: 55°C to +125°C
Storage temperature: 55°C to +125°C
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 /0.1.
Total Total Model Number
Capacitance Capacitance Q min
CT(pF) at 3 V CT(pF) at 25 V at 4 V Common
min max min max (50 MHz) Single Cathode
9.5 14.5 1.8 2.8 200 GVD30501-001
9.5 14.5 1.8 2.8 750 GVD30502-001
26.0 32.0 4.3 6.0 200 GVD30503-001
26.0 32.0 4.3 6.0 500 GVD30504-001
FEATURES
Mesa epitaxial silicon construction
Silicon dioxide passivated
Superior wide range linear characteristics
High tuning ratios
High Q
Available in common cathode style
Available in chip form (add suffix -000)
APPLICATIONS
Low phase noise VCOs
Phase locked loop VCOs
VARACTOR DIODES SG-950
0.115 ± 0.005
2.93 ± 0.13 0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.075 ± 0.005
1.91 ± 0.13
0.091 ± 0.008
2.3 ± 0.2
0.021 ± 0.003
0.53 ± 0.08
0.040 ± 0.007
1.03 ± 0.18
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TOP VIEW
(SINGLE) (COMMON CATHODE)
0.035
0.90
0.031
0.80
0.079
2.0
0.037
0.95
0.037
0.95
0.016 ± 0.002
0.41 ± 0.04
TYP
TYP
1
PAD LAYOUT
2
3
12
3
TYP
TYP
50.0
10.0
5.0
1.0
0.5
0.3 12345610 20 30 50
REVERSE VOLTAGE
(VOLTS)
CT (pF)
2.0
3.0
0.5
GVD30503-001
GVD30502-001
SPRQGUE Goonmnn m. M } Eli
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
8
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
VHF/UHF Hyperabrupt Series
High linearity VCOs
Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 22 V min
Maximum reverse leakage current at 20 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: 55°C to +125°C
Storage temperature: 55°C to +125°C
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 /0.1.
Total Total Total Model Number
Capacitance Capacitance Capacitance Q min
CT(pF) at 4 V CT(pF) at 8 V CT(pF) at 20 V at 4 V Common
min max min max min max (50 MHz) Single Cathode
18.0 22.0 7.5 10.5 2.7 3.5 160 GVD30601- 001
45.0 55.0 18.0 25.0 6.6 9.0 125 GVD30602-001
100.0 120.0 39.0 55.0 14.0 19.0 80 GVD30603-001
FEATURES
Mesa epitaxial silicon construction
Silicon dioxide passivated
Superior wide range linear characteristics
High tuning ratios
High Q
Available in common cathode style
Available in chip form (add suffix -000)
APPLICATIONS
Low phase noise VCOs
Phase locked loop VCOs
VARACTOR DIODES SG-950
0.115 ± 0.005
2.93 ± 0.13 0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.075 ± 0.005
1.91 ± 0.13
0.091 ± 0.008
2.3 ± 0.2
0.021 ± 0.003
0.53 ± 0.08
0.040 ± 0.007
1.03 ± 0.18
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TOP VIEW
(SINGLE) (COMMON CATHODE)
0.035
0.90
0.031
0.80
0.079
2.0
0.037
0.95
0.037
0.95
0.016 ± 0.002
0.41 ± 0.04
TYP
TYP
1
PAD LAYOUT
2
3
12
3
TYP
TYP
500
50
10
5
3
0.5 12345
610 20 30 50
REVERSE VOLTAGE
(VOLTS)
GVD30603-001
GVD30601-001
GVD30602-001
CT (pF)
100
o 4L ///%4 V L .
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES SG-950
9
MICROWAVE HYPERABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
APPLICATIONS
PCS WANS AMPS
GSM TAGS DECT
Cellular
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 22 V min
Maximum reverse leakage current at 20 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: 65°C to +125°C
Storage temperature: 65°C to +125°C
FEATURES
Mesa epitaxial silicon construction
Silicon dioxide passivated
Fits Footprint for SOD-323, SOD-123 and smaller
High frequency (VHF to 8 GHz)
Available on carrier and reel
Available in chip form (add suffix -000)
Two package styles including lower cost, flat
top version
Alternate notched termination version available,
contact factory for outline drawing
Total Total Total
Capacitance Capacitance Capacitance Q min
CT(pF) at 0 V CT(pF) at 4V C
T(pF) at 20 V at 4 V Model
typical min max min max (50 MHz) Number*
26.0 8.75 10.80 1.85 2.50 400 GVD92101 _ _ _
14.0 4.45 5.50 0.85 1.30 600 GVD92102 _ _ _
7.0 2.65 3.30 0.65 0.90 700 GVD92103 _ _ _
5.0 1.75 2.20 0.50 0.70 850 GVD92104 _ _ _
3.0 1.30 1.65 0.40 0.55 1000 GVD92105 _ _ _
2.0 0.85 1.10 0.30 0.45 1200 GVD92106 _ _ _
All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.003/0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
package can be used for multiple diode designs (such as common cathode or common anode). Contact factory
for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
D TYP
M
L
TERMINATIONS (GOLD PLATED)
BOTTOM VIEW
MOUNTING PAD LAYOUT
A
TOP VIEW
B
DOT INDICATES
CATHODE END
C1
SIDE VIEW FOR - 01__
EPOXY
ENCAPSULANT
EPOXY
ENCAPSULANT C2
SIDE VIEW FOR - 11__
K TYP
Dash
No. ABC
1C2DKLM
- 011 0.10 0.050 0.035 0.050 0.015 ± 0.004 0.030 0.070 0.112
- 111 2.5 1.3 0.89 1.3 0.38 ± 0.1 0.76 1.8 2.84
- 012 0.12 0.060 0.035 0.050 0.020 ± 0.005 0.030 0.080 0.132
- 112 3.0 1.5 0.89 1.3 0.51 ± 0.1 0.76 2.0 3.35
- 013 0.200 0.100 0.035 0.050 0.020 ± 0.005 0.030 0.120 0.212
- 113 5.08 2.54 0.89 1.3 0.51 ± 0.1 0.76 3.05 5.38
- 014 0.075 0.050 0.035 0.050 0.015 ± 0.004 0.030 0.070 0.087
- 114 1.9 1.3 0.89 1.3 0.38 ± 0.1 0.76 1.8 2.2
- 015 0.062 0.042 0.030 0.050 0.011 ± 0.003 0.020 0.060 0.072
- 115 1.6 1.1 0.76 1.3 0.28 ± 0.08 0.51 1.5 1.8
*For complete model number, select Dash No. from chart below.
SPRQGUE GUODan @171 gm in 9a 3 :,H1 ’1‘ ‘i 7%; 7'
10
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES SG-950
HIGH Q ABRUPT TUNING VARACTOR DIODES
Phase locked loop VCOs
Moderate bandwidth VCOs
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 30 V min
Maximum reverse leakage current at 25 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: 55°C to +125°C
Storage temperature: 55°C to +125°C
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 /0.1.
Capacitance
Total Ratio Model Number
Capacitance CT at 0 V Q min
CT(pF) at 4 V CTat 30 V at 4 V Common
(±10%) min (50 MHz) Single Cathode
1.2 3.4 3200 GVD1202-001 GVD1202-004
1.5 3.5 3000 GVD1203-001 GVD1203-004
1.8 3.5 3000 GVD1204-001 GVD1204-004
2.2 3.7 3000 GVD1205-001 GVD1205-004
2.7 3.7 2500 GVD1206-001 GVD1206-004
3.3 3.8 2500 GVD1207-001 GVD1207-004
3.9 3.9 2500 GVD1208-001 GVD1208-004
4.7 3.9 2000 GVD1209-001 GVD1209-004
5.6 4.0 2000 GVD1210-001 GVD1210-004
6.8 4.0 2000 GVD1211-001
8.2 4.0 2000 GVD1212-001
10.0 4.1 1800 GVD1213-001
12.0 4.1 1600 GVD1214-001
15.0 4.2 1250 GVD1215-001
18.0 4.2 1000 GVD1216-001
22.0 4.2 850 GVD1217-001
FEATURES
Mesa epitaxial silicon construction
Silicon dioxide passivated
Economy price
Mil grade performance
High Q
Available in common cathode style
Available in chip form (add suffix -000)
APPLICATIONS
Low phase noise VCOs
0.115 ± 0.005
2.93 ± 0.13 0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.075 ± 0.005
1.91 ± 0.13
0.091 ± 0.008
2.3 ± 0.2
0.021 ± 0.003
0.53 ± 0.08
0.040 ± 0.007
1.03 ± 0.18
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TOP VIEW
(SINGLE) (COMMON CATHODE)
0.035
0.90
0.031
0.80
0.079
2.0
0.037
0.95
0.037
0.95
0.016 ± 0.002
0.41 ± 0.04
TYP
TYP
1
PAD LAYOUT
2
3
12
3
TYP
TYP
20
10
5
3
0.5
12
345
610 20 30
REVERSE VOLTAGE
(VOLTS)
JUNCTION
CAPACITANCE
(pF)
GVD1211-001
GVD1203-001
GVD1209-001
2
1
GVD1207-001
GVD1213-001
o" 4L .74\f '\ f‘ K ' 7 /fi e7 % x4 * LJ K i I:
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES SG-950
11
MICROWAVE ABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
APPLICATIONS
PCS WANS AMPS
GSM TAGS DECT
Cellular
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 30 V min
Maximum reverse leakage current at 25 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: 65°C to +125°C
Storage temperature: 65°C to +125°C
Capacitance Capacitance
Total Ratio Ratio
Capacitance CTat 0 V CTat 4 V Q min
CT(pF) at 4 V CTat 4 V CTat 30 V at 4 V Model
(±10%) min min (50 MHz) Number*
0.8 1.5 1.45 3900 GVD91300 _ _ _
1.0 1.6 1.55 3800 GVD91301 _ _ _
1.2 1.7 1.60 3700 GVD91302 _ _ _
1.5 1.8 1.65 3600 GVD91303 _ _ _
1.8 1.9 1.70 3500 GVD91304 _ _ _
2.2 2.0 1.75 3400 GVD91305 _ _ _
2.7 2.0 1.80 3300 GVD91306 _ _ _
3.3 2.1 1.85 3100 GVD91307 _ _ _
3.9 2.1 1.90 2700 GVD91308 _ _ _
4.7 2.2 1.95 2600 GVD91309 _ _ _
5.6 2.2 2.00 2500 GVD91310 _ _ _
FEATURES
Mesa epitaxial silicon construction
Silicon dioxide passivated
Fits Footprint for SOD-323, SOD-123 and smaller
High Frequency (VHF to 8 GHz)
Available on carrier and reel
Available in chip form (add suffix -000)
Two package styles including lower cost, flat
top version
Alternate notched termination version available,
contact factory for outline drawing
All dimensions are in /mm. Unless otherwise specified, the tolerance on dimensions is ± 0.003/0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
package can be used for multiple diode designs (such as common cathode or common anode). Contact factory
for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
D TYP
M
L
TERMINATIONS (GOLD PLATED)
BOTTOM VIEW
MOUNTING PAD LAYOUT
A
TOP VIEW
B
DOT INDICATES
CATHODE END
C1
SIDE VIEW FOR - 01__
EPOXY
ENCAPSULANT
EPOXY
ENCAPSULANT C2
SIDE VIEW FOR - 11__
K TYP
Dash
No. ABC
1C2DKLM
- 011 0.10 0.050 0.035 0.050 0.015 ± 0.004 0.030 0.070 0.112
- 111 2.5 1.3 0.89 1.3 0.38 ± 0.1 0.76 1.8 2.84
- 012 0.12 0.060 0.035 0.050 0.020 ± 0.005 0.030 0.080 0.132
- 112 3.0 1.5 0.89 1.3 0.51 ± 0.1 0.76 2.0 3.35
- 013 0.200 0.100 0.035 0.050 0.020 ± 0.005 0.030 0.120 0.212
- 113 5.08 2.54 0.89 1.3 0.51 ± 0.1 0.76 3.05 5.38
- 014 0.075 0.050 0.035 0.050 0.015 ± 0.004 0.030 0.070 0.087
- 114 1.9 1.3 0.89 1.3 0.38 ± 0.1 0.76 1.8 2.2
- 015 0.062 0.042 0.030 0.050 0.011 ± 0.003 0.020 0.060 0.072
- 115 1.6 1.1 0.76 1.3 0.28 ± 0.08 0.51 1.5 1.8
*For complete model number, select Dash No. from chart below.
SPRQGUE Goonmnn mm max mm max 7-x #74 #7
12
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES SG-950
MINIATURE MICROWAVE SILICON VARACTOR DIODES
Surface Mount Monolithic Package (SMMP)
APPLICATIONS
Microwave Voltage Controlled Oscillators (VCOs)
Ideal for Wide Bandwidth Applications (VHF-10 GHz)
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): See below
Maximum reverse leakage current at 10 V
(at 25°C): 0.05 µA DC
Operating junction temperature: 65°C to +125°C
Storage temperature: 65°C to +125°C
All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 /0.1.
FEATURES
Multilayer construction
Low SMT profile
Low series inductance
Low parasitic capacitance (0.06 pF )
High Q
Available on carrier and reel
Capacitance Capacitance
Total Ratio Ratio
Capacitance CTat 1 V CTat 1 V Q min
CT(pF) at 1 V CTat 3 V CTat 6 V at 4 V Model
min max min max min max (50 MHz) Number
2.6 3.8 1.4 2.2 2.6 3.6 1500 GVD60100
Reverse breakdown voltage at 10 µA DC: 15 V min
Total Total Total
Capacitance Capacitance Capacitance Q min
CT(pF) at 0 V CT(pF) at 4 V CT(pF) at 20 V at 4 V Model
typical min max max max (50 MHz) Number
3.25 0.9 1.5 0.2 0.45 1000 GVD60200
Reverse breakdown voltage at 10 µA DC: 22 V min
Models shown above supplied bulk in vials.
For 300 pc gel pack, add -03" to the model number.
For 5000 pc carrier and reel, add -50" to the model number.
0.040
1.02
0.019
0.48
0.020
0.51
0.016
0.41
0.015
0.38
0.012
0.30
MARKING FOR
CATHODE END
GOLD METALIZED
PADS (2 PLACES)
0.011
0.28
TOP VIEW
SIDE VIEW
BOTTOM VIEW
© 2000 SPRAGUE-GOODMAN ELECTRONICS, INC., ALL RIGHTS RESERVED. PRINTED IN THE U.S.A. 50104

Products related to this Datasheet

CAPACITOR
CAPACITOR
CAPACITOR
CAPACITOR
CAPACITOR
CAPACITOR
CAPACITOR
CAPACITOR
CAPACITOR
CAPACITOR