MG1225H-XN2MM Datasheet by Littelfuse Inc.

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% Litleltuse“ ExpemxeADnllzd \ Amway
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
181
MG1225H-XN2MM
1200V 25A IGBT Module
Features
RoHS
• High level of integration
IGBT3 CHIP(Trench+Field
Stop technology)
Low saturation voltage
and positive temperature
coefficient
Fast switching and short
tail current
Free wheeling diodes
with fast and soft reverse
recovery
Solderable pins for PCB
mounting
Temperature sense
included
AC motor control
Motion/servo control
Inverter and power
supplies
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Values Unit
IGBT
VCES Collector - Emitter Voltage TJ=25°C 1200 V
VGES Gate - Emitter Voltage ±20 V
ICDC Collector Current TC=25°C 40 A
TC=80°C 25 A
ICM Repetitive Peak Collector Current tp=1ms 50 A
Ptot Power Dissipation Per IGBT 147 W
Diode
VRRM Repetitive Reverse Voltage TJ=25°C 1200 V
IF(AV) Average Forward Current TC=25°C 35 A
TC=80°C 25 A
IFRM Repetitive Peak Forward Current tp=1ms 50 A
I2t TJ =125°C, t=10ms, VR=0V 200 A2s
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
TJ max Max. Junction Temperature 150 °C
TJ op Operating Temperature -40 125 °C
Tstg Storage Temperature -40 125 °C
Visol Insulation Test Voltage AC, t=1min 3000 V
CTI Comparative Tracking Index 250
MdMounting Torque Recommended (M5) 2.5 5N·m
Weight 180 g
MG1225H-XN2MM
1
Applications
% Litleltuse“ ExpemxeADnllzd \ Amway
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
182
MG1225H-XN2MM
1200V 25A IGBT Module
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=1mA 5.0 5.8 6.5 V
VCE(sat)
Collector - Emitter IC=25A, VGE=15V, TJ=25°C 1. 7 V
Saturation Voltage IC=25A, VGE=15V, TJ=125°C 1. 9 V
IICES Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25°C 0.1 mA
VCE=1200V, VGE=0V, TJ=125°C 1mA
IGES Gate Leakage Current VCE=0V, VGE=±15V, TJ=125°C -400 400 nA
RGint Integrated Gate Resistor 8.0 Ω
Qge Gate Charge VCE=600V, IC=25A , VGE=±15V 0.24 μC
Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 1.81 nF
Cres Reverse Transfer Capacitance 0.08 nF
td(on) Turn - on Delay Time
VCC=600V
IC=25A
RG =36Ω
VGE=±15V
Inductive Load
T J=25°C 90 ns
TJ=125°C 90 ns
trRise Time T J=25°C 30 ns
TJ=125°C 50 ns
td(off) Turn - off Delay Time T J=25°C 420 ns
TJ=125°C 520 ns
tfFall Time T J=25°C 70 ns
TJ=125°C 90 ns
Eon Turn - on Energy T J=25°C 2.4 mJ
TJ=125°C 3.5 mJ
Eoff Turn - off Energy T J=25°C 1. 8 mJ
TJ=125°C 2.1 mJ
ISC Short Circuit Current tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 10 0 A
RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.85 K/W
Diode
VFForward Voltage IF=25A, VGE=0V, TJ =25°C 1.55 V
IF=25A, VGE=0V, TJ =125°C 1.54 V
tRR Reverse Recovery Time IF=25A, VR=600V
diF/dt=-400A/µs
TJ=125°C
200 ns
IRRM Max. Reverse Recovery Current 20 A
Erec Reverse Recovery Energy 1. 5 mJ
RthJCD Junction-to-Case Thermal Resistance (Per Diode) 1. 4 K/W
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
2
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
R25 Resistance Tc=25°C 5 KΩ
B25/50 3375 K
% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
183
MG1225H-XN2MM
1200V 25A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
I
C
(A)
V
CE
˄V˅
T
j
=125°C
T
j
=25°C
50
40
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V
GE
=15V
3.5
Figure 2: Typical Output Characteristics
for IGBT Inverter
VGE˄V˅
0
10
IC (A)
20
30
40
50
Tj
=125°C
Tj
=25°C
VCE =20V
1210 9 7 6 5 8 11
Figure 3: Typical Transfer Characteristics
for IGBT Inverter
4
5
2
3
1
001020 30 40 70
E
on
E
off
(
mJ
)
E
on
E
of
f
R
G
˄˅
V
CE
=600V
I
C
=25A
V
GE
=±15V
T
j
=125°C
50 60
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
0 10
I
C
˄A˅
V
CE
=600V
R
G
=36
V
GE
=±15V
T
j
=125°C
40 30
20
E
off
E
on
0
2
4
6
10
E
on
E
off
(
mJ
)
8
50
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
Figure 6: Reverse Biased Safe Operating Area
for IGBT Inverter
0
10
20
30
40
50
0200 400 600 800 1000 1200
V
CE
˄V˅
1400
RG=36Ω
VGE=±15V
T
j
=125°C
I
C
(A)
V
CE
˄V˅
4.0 3.5 3.0 2.5 1.51.00.50
I
C
(A)
2.04.5 5.0
50
40
30
20
10
0
T
J
=125°C
GE
V=11V
GE
V= 9V
GE
V=13V
GE
V=15V
GE
V=17V
GE
V=19V
3
% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn 100 T: (“0)
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
184
MG1225H-XN2MM
1200V 25A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
VF˄V˅
0.5
0 1.0 1.5 2.0 3.0
0
10
30
40
50
20
IF
(
A
)
Tj
=25°C
Tj
=125°C
2.5
E
rec
mJ
RG˄˅
010 20 30 40 50 60 70
2.0
1.5
1.0
0.5
0
2.5
3.0
I
F
=25
A
V
CE
=600V
T
j
=125°C
Figure 8: Switching Energy vs. Gate Resistort
for Diode Inverter
E
rec
(
mJ
)
2.0
1.5
1.0
0.5
0 10
IF (A)
50
30 20
0
2.5
3.0
RG=36
VCE=600V
T
j
=125°C
40
Figure 9: Switching Energy vs. Forward Current
Diode-inverter
Rectangular Pulse Duration (seconds)
T
J
=150°C
T
C
=25°C
V
GE
=15V
t
sc
İ10µs
0.001 0.01 0.1 1 10
0.01
0.1
1
10
Diode
IGBT
Figure 10: Transient Thermal Impedance of
Diode and IGBT-inverter
4
T
C
˄°C˅
100000
10000
1000
100020 40 60 80 100 140
120 160
R
Figure 11: NTC Characteristics
% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn mo us
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
185
MG1225H-XN2MM
1200V 25A IGBT Module
Part Numbering System Part Marking System
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
CIRCUIT TYPE
WAFER TYPE
PACKAGE TYPE
MG12 25
H
-
X
N2
MM
VOLTAGE RATING
CURRENT RATING
ASSEMBLY SITE
12: 1200V
25: 25A
MG1225H-XN2MM
LOT NUMBER
Space
reserved
for QR
code
Packing Options
Part Number Marking Weight Packing Mode M.O.Q
MG1225H-XN2MM MG1225H-XN2MM 180g Bulk Pack 40
5
The foot pins are in gold / nickel coating
Dimensions-Package H
Circuit Diagram

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