MG12100S-BN2MM Datasheet by Littelfuse Inc.

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Power Module
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
76
MG12100S-BN2MM
1200V 100A IGBT Module
MG12100S-BN2MM
Features
Applications
High short circuit
capability, self limiting
short circuit current
IGBT3 CHIP(Trench+Field
Stop technology)
VCE(sat) with positive
temperature coefficient
Fast switching and short
tail current
Free wheeling diodes
with fast and soft reverse
recovery
Low switching losses
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Values Unit
IGBT
VCES Collector - Emitter Voltage TJ=25°C 1200 V
VGES Gate - Emitter Voltage ±20 V
ICDC Collector Current TC=25°C 140 A
TC=80°C 10 0 A
ICM Repetitive Peak Collector Current tp=1ms 200 A
Ptot Power Dissipation Per IGBT 450 W
Diode
VRRM Repetitive Reverse Voltage TJ=25°C 1200 V
IF(AV) Average Forward Current TC=25°C 140 A
TC=80°C 10 0 A
IFRM Repetitive Peak Forward Current tp=1ms 200 A
I2t TJ =125°C, t=10ms, VR=0V 1850 A2s
Module Characteristics (TC = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
TJ max Max. Junction Temperature 150 °C
TJ op Operating Temperature -40 125 °C
Tstg Storage Temperature -40 125 °C
Visol Insulation Test Voltage AC, t=1min 3000 V
CTI Comparative Tracking Index 350
Torque Module-to-Sink Recommended (M6) 3 5 N·m
Torque Module Electrodes Recommended (M5) 2.5 5N·m
Weight 160 g
High frequency
switching application
• Medical applications
• Motion/servo control
• UPS systems
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
®
RoHS
Agency Approvals
1
AGENCY AGENCY FILE NUMBER
E71639
% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn
Power Module
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
77
MG12100S-BN2MM
1200V 100A IGBT Module
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=4mA 5.0 5.8 6.5 V
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=100A, VGE=15V, TJ=25°C 1. 7 V
IC=100A, VGE=15V, TJ=125°C 1. 9 V
ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25°C 1mA
VCE=1200V, VGE=0V, TJ=125°C 5mA
IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=125°C -400 400 nA
RGint Integrated Gate Resistor 7. 5 Ω
Qge Gate Charge VCC=600V, IC=100A , VGE=±15V 0.9 μC
Cies Input Capacitance
VCE=25V, VGE=0V, f =1MHz
7. 1 nF
Cres Reverse Transfer Capacitance 0.3 nF
td(on) Turn - on Delay Time
VCC=600V
IC=100A
RG =3.9Ω
VGE=±15V
Inductive Load
TJ =25°C 260 ns
TJ =125°C 290 ns
trRise Time TJ =25°C 30 ns
TJ =125°C 50 ns
td(off) Turn - off Delay Time TJ =25°C 420 ns
TJ =125°C 520 ns
tfFall Time TJ =25°C 70 ns
TJ =125°C 90 ns
Eon Turn - on Energy TJ =25°C 7. 8 mJ
TJ =125°C 10 mJ
Eoff Turn - off Energy TJ =25°C 8mJ
TJ =125°C 10 mJ
ISC Short Circuit Current tpsc≤10μS , VGE=15V
TJ=125°C,VCC=900V 400 A
RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.28 K/W
Diode
VFForward Voltage IF=100A , VGE=0V, TJ =25°C 1.65 V
IF=100A , VGE=0V, TJ =125°C 1.65 V
IRRM Max. Reverse Recovery Current IF=100A , VR=600V
diF/dt=-2500A/μs
TJ =125°C
140 A
Qrr Reverse Recovery Charge 20.0 μC
Erec Reverse Recovery Energy 9 mJ
RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.5 K/W
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
2
leltuse" ExpemxaADnllzd \ Anxwux Damn
Power Module
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
78
MG12100S-BN2MM
1200V 100A IGBT Module
Figure 1: Typical Output Characteristics
I
C
(A)
V
CE
˄V˅
T
J
=125°C
T
J
=25°C
200
160
80
40
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V
GE
=15V
3.5
120
Figure 2: Typical Output characteristics
VGE˄V˅
0
40
IC (A)
80
200
TJ
=125°C
TJ
=25°C
V
CE
=20V
1210 9 7 6 5 8 11
120
160
Figure 3: Typical Transfer characteristics
15
30
10
5
004816 24
E
on
E
off
(
mJ
)
E
on
E
of
f
R
G
˄˅
V
CE
=600V
I
C
=100A
V
GE
=±15V
T
J
=125°C
25
12 20 32 36
28
20
Figure 4: Switching Energy vs. Gate Resistor
0 50
I
C
˄A˅
V
CE
=600V
R
G
=3.9
V
GE
=±15V
T
J
=125°C
200
100
E
off
E
on
0
10
15
30
E
on
E
off
(
mJ
)
20
150
25
5
Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area
0
50
100
200
250
0200400600800 1000 1200
VCE˄V˅
1400
R
G
=3.9
V
GE
=±15V
T
J
=125°C
IC (A)
150
V
CE
˄V˅
4.0 3.5 3.0 2.5 1.51.00.50
I
C
(A)
T
J
=125°C
2.04.5 5.0
200
160
80
40
0
120
GE
V=11V
GE
V= 9V
GE
V=13V
GE
V=15V
GE
V=17V
GE
V=19V
3
% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn 0.6 1.2 1.5 ncl vac( Rectangular Pulse Duration (seconds)
Power Module
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
79
MG12100S-BN2MM
1200V 100A IGBT Module
Figure 7: Diode Forward Characteristics
VF˄V˅
0.6 8.1 2.1 0
0
40
120
200
80
TJ =25°C
TJ
=125°C
2.4
160
E
rec
mJ
R
G
˄˅
0
6.0
4.0
2.0
0
12.0
I
F
=100
A
V
CE
=600V
T
J
=125°C
8.0
10.0
4816 24
12 20 32 36
28
Figure 8: Switching Energy vs. Gate Resistor
E
rec
(
mJ
)
4.0
2.0
0 50
IF (A)
100
0
12.0
14.0
RG=3.9
VCE=600V
TJ
=125°C
200
150
6.0
8.0
10.0
Figure 9: Switching Energy vs. Forward Current
Rectangular Pulse Duration (seconds)
ZthJC
(
K/W
)
0.001 0.01 0.1 1 10
0.01
0.1
1
Diode
IGBT
Figure 10: Transient Thermal Impedance
4
#2 No.8 1% ZSJ 305105 t
Power Module
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
80
MG12100S-BN2MM
1200V 100A IGBT Module
Packing Options
Part Number Marking Weight Packing Mode M.O.Q
MG12100S-BN2MM MG12100S-BN2MM 160g Bulk Pack 10 0
Part Numbering System Part Marking System
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
CIRCUIT TYPE
WAFER TYPE
PACKAGE TYPE
MG12100S-BN2MM
VOLTAGE RATING
CURRENT RATING
ASSEMBLY SITE
12: 1200V
100: 100A S: Package S
B: 2x(IGBT+FWD)
Dimensions-Package S Circuit Diagram
5
MG12100S-BN2MM
LOT NUMBER
Space
reserved
for QR
code

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