MG12400D-BN2MM Datasheet by Littelfuse Inc.

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Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
115
MG12400D-BN2MM
1200V 400A IGBT Module
MG12400D-BN2MM
Features
Applications
High short circuit
capability, self limiting
short circuit current
IGBT3 CHIP(Trench+Field
Stop technology)
VCE(sat) with positive
temperature coefficient
Fast switching and short
tail current
Free wheeling diodes
with fast and soft reverse
recovery
Low switching losses
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Values Unit
IGBT
VCES Collector - Emitter Voltage TJ =25°C 1200 V
VGES Gate - Emitter Voltage ±20 V
ICDC Collector Current TC=25°C 580 A
TC=80°C 400 A
ICM Repetitive Peak Collector Current tp=1ms 800 A
Ptot Power Dissipation Per IGBT 1925 W
Diode
VRRM Repetitive Reverse Voltage TJ =25°C 1200 V
IF(AV) Average Forward Current TC=25°C 580 A
TC=80°C 400 A
IFRM Repetitive Peak Forward Current 800 A
I2t TJ =125°C, t=10ms, VR =0V 30000 A2s
Medical applications
High frequency switching
application
Motion/servo control
UPS systems
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
®
RoHS
Agency Approvals
1
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
TJ max Max. Junction Temperature 150 °C
TJ op Operating Temperature -40 125 °C
Tstg Storage Temperature -40 125 °C
Visol Insulation Test Voltage AC, t=1min 3000 V
CTI Comparative Tracking Index 350
Torque Module-to-Sink Recommended (M6) 35 N·m
Torque Module Electrodes Recommended (M6) 2.5 5 N·m
Weight 320 g
AGENCY AGENCY FILE NUMBER
E71639
% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
116
MG12400D-BN2MM
1200V 400A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
2
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=16mA 5.0 5.8 6.5 V
VCE(sat)
Collector - Emitter IC=400A, VGE=15V, TJ=25°C 1. 7 V
Saturation Voltage IC=400A, VGE=15V, TJ=125°C 1. 9 V
IICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25°C 2mA
VCE=1200V, VGE=0V, TJ=125°C 10 mA
IGES Gate Leakage Current VCE=0V, VGE=±15V, TJ=125°C -400 400 nA
RGint Integrated Gate Resistor 1. 9 Ω
Qge Gate Charge VCE=600V, IC=400A , VGE=±15V 3.8 μC
Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 28 nF
Cres Reverse Transfer Capacitance 1. 0 nF
td(on) Turn - on Delay Time
VCC=600V
IC=400A
RG =1.8Ω
VGE=±15V
Inductive Load
T J=25°C 160 ns
TJ=125°C 170 ns
trRise Time T J=25°C 40 ns
TJ=125°C 45 ns
td(off) Turn - off Delay Time T J=25°C 450 ns
TJ=125°C 520 ns
tfFall Time T J=25°C 10 0 ns
TJ=125°C 160 ns
Eon Turn - on Energy T J=25°C 20 mJ
TJ=125°C 30 mJ
Eoff Turn - off Energy T J=25°C 33 mJ
TJ=125°C 50 mJ
ISC Short Circuit Current tpsc≤10μS , VGE=15V, TJ=125°C , VCC=900V 1550 A
RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.065 K/W
Diode
VFForward Voltage IF=400A, VGE=0V, TJ =25°C 1.65 V
IF=400A, VGE=0V, TJ =125°C 1.65 V
tRR Reverse Recovery Time IF=400A, VR=600V
diF/dt=-8000A/µs
TJ=125°C
450 ns
IRRM Max. Reverse Recovery Current 75 A
Erec Reverse Recovery Energy 35 mJ
RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.12 K/W
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Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
117
MG12400D-BN2MM
1200V 400A IGBT Module
Figure 1: Typical Output Characteristics
IC (A)
VCE˄V˅
TJ
=125°C
T
J
=25°C
800
640
320
160
0
0 0.5 1.0 1.5 2.0 2.5
V
GE
=15V
3.0
480
Figure 2: Typical Output Characteristics
VGE˄V˅
0
160
IC (A)
320
800
TJ
=125°C
TJ
=25°C
V
CE
=20V
1210 9 7 6 5 8 11
480
640
Figure 3: Typical Transfer characteristics
200
40
002410
E
on
E
off
(
mJ
)
E
on
E
of
f
R
G
˄˅
V
CE
=600V
I
C
=400A
V
GE
=±15V
T
J
=125°C
6814 18
12
120
80
16
160
Figure 4: Switching Energy vs. Gate Resistor
0 100
I
C
˄A˅
V
CE
=600V
R
G
=1.8
V
GE
=±15V
T
J
=125°C
800
200
E
off
E
on
0
20
40
120
E
on
E
off
(
mJ
)
300
80
400 700
60
600 500
100
Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area
0
100
200
600
900
0200 400 600 800 1000 1200
V
CE
˄V˅
1400
R
G
=1.8
V
GE
=±15V
T
J
=125°C
I
C
(A)
300
400
500
800
700
V
CE
˄V˅
4.0 3.5 3.0 2.5 1.51.00.50
I
C
(A)
T
J
=125°C
2.04.5 5.0
800
640
320
160
0
480
GE
V=11V
GE
V= 9V
GE
V=13V
GE
V=15V
GE
V=17V
GE
V=19V
3
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Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
118
MG12400D-BN2MM
1200V 400A IGBT Module
Figure 7: Diode Forward Characteristics
V
F
˄V˅
0.6 8.1 2.1 0
0
160
480
800
320
I
F
(
A
)
T
J
=25°C
T
J
=125°C
2.4
640
E
r
ec
(
mJ
)
RG˄˅
0
8
4
0
24
I
F
=400A
V
CE
=600V
TV
=125°C
20
24812
61618
14
10
16
12
Figure 8: Switching Energy vs. Gate Resistor
E
rec
(
mJ
)
16
8
0 100
IF (A)
200
0
RG=1.8
VCE=600V
TV
j
=125°C
800
300
40
48
400 500 600 700
32
24
Figure 9: Switching Energy vs. Forward Current
Rectangular Pulse Duration (seconds)
ZthJC
(
K/W
)
0.001 0.01 0.1 1 10
0.001
0.1
1
Diode
IGBT
0.01
Figure 10: Transient Thermal Impedance
4
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Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
119
MG12400D-BN2MM
1200V 400A IGBT Module
Packing Options
Part Number Marking Weight Packing Mode M.O.Q
MG12400D-BN2MM MG12400D-BN2MM 320g Bulk Pack 60
Part Numbering System Part Marking System
Dimensions-Package D Circuit Diagram
3-M6
2.8x0.5
5
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
CIRCUIT TYPE
WAFER TYPE
PACKAGE TYPE
MG12400
D - B N2 MM
VOLTAGE RATING
CURRENT RATING
ASSEMBLY SITE
12: 1200V
400: 400A
2x(IGBT+FWD)
MG12400D-BN2MM LOT NUMBER

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