IXHH40N150HV Datasheet by IXYS

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:I IXYS
© 2014 IXYS CORPORATION, All Rights Reserved
1500V MOS Gated
Thyristor
VDM = 1500V
Symbol Test Conditions Maximum Ratings
VDM TJ = 25°C to 150°C 1500 V
VGK Continuous ±30 V
VGK Transient ±40 V
ITSM TC = 25°C, 1μs 7.6 kA
TC = 25°C, 10μs 3.5 kA
PDTC = 25°C 695 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062 in.) from Case for 10s 260 °C
MdMounting Torque 1.13/10 Nm/lb.in
Weight 6 g
DS100611A(6/14)
Features
Very High Voltage Package
Very High Current Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Capacitive Discharge Circuits
Ignition Circuits
Solid State Surge Protection
IXHH40N150HV
K
A
G
G = Gate K = Cathode
A = Anode Tab = Anode
TO-247HV
Tab
G
K
A
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
VBR IA = 250A, VGK = 0V 1500 V
VGK(th) IA= 250μA, VAK = VGK 2.5 5.0 V
VTIT= 1000A, VGK = 15V 5.95 7.5 V
rT IT> IL, VGK = 15V 1.20 m
VBO VGK = 15V 6.45 V
IDVAK = 1500V, VGK = 0V 15 A
TJ = 125C 1 mA
IL 250 A
IH 200 A
IGKS VAK = 0V, VGK = 30V 200 nA
Preliminary Technical Information
and
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXHH40N150HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
Ciks 2825 pF
Coks VAK = 25V, VGK = 0V, f = 1MHz 164 pF
Crks 50 pF
Qg(on) 99 nC
Qgk IC = 40A, VGK = 15V, VAK = 600V 22 nC
Qga 36 nC
tri 100 ns
td 50 ns
tri 100 ns
td 50 ns
RthJC 0.18 °C/W
RthCS 0.21 °C/W
Capacitive Discharge, TJ = 25°C
IA = 2000A, VGK = 15V, RG = 1
VAK = 1000V, L < 20nH, Notes 2 & 3
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. It is recommended to use a gate driver capable of supplying more than 4Amps
and >15V gate voltage.
3. Refer to fig. 8 & 9.
Capacitive Discharge, TJ = 125°C
IA = 2000A, VGK = 15V, RG = 1
VAK = 1000V, L < 20nH, Notes 2 & 3
TO-247HV Outline
PINS:
1 - Gate 2 - Cathode
3, 4 - Anode
E
RA
QS
A3
e
D
cb
A1
L1
D3
D1
D2
E2
E3
3X
2X
4X
3X
A2
b1
0P
E1
0P1
4
31 2
e1
L
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
moan Capamtanee APxenFarads m Fig. 5. Capacitance VGK A VUHS < c="" ,="" 1="" mhz="" ka5="" m="" \\\="" kr="" \\="" cm="" u="" m="" \\\="" cm;="" u="" um="" a="" 5="" m=""><5 2d="" 25="" an="" 35="" on="" a="" mom="" vak="" ,="" vo‘s="" ©="" 2014="" ixys="" corporation,="" au="" hiqms="" reserved="">
© 2014 IXYS CORPORATION, All Rights Reserved
IXHH40N150HV
Fig. 6. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 5. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VAK - Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
Ciks
Coks
Crks
Fig. 1. Extended Output Characteristics @ T
J
= 25ºC
0
200
400
600
800
1000
1200
012345678910
V
AK
- Volts
I
A -
Amperes
10
V
9V
8V
V
GK
= 20V
17V
15V
13V
12V
11V
Fig. 4. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090100
Q
G
- NanoCoulombs
V
GK
- Volts
V
AK
= 600V
I
A
= 40A
I
G
= 10mA
Fig. 2. Extended Output Characteristics @ T
J
= 125ºC
0
200
400
600
800
1000
1200
012345678
V
AK
- Volts
I
A
- Amperes
V
GK
= 20V
17V
15V
13V
11V
10V
9V
8V
6V
Fig. 3. Extended Output Characteristics @ T
J
= - 40ºC
0
200
400
600
800
1000
1200
012345678910
V
AK
- Volts
I
A
- Amperes
V
GK
= 20V
18V
16V
15V
14V
13V
12V
11V
9V
7V
:I IXYS a4 * = v“ ‘ !_ 1 mm- u ‘‘‘‘‘‘‘‘‘‘ l" 3. in
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXHH40N150HV
IXYS REF: IXH_40N150HV(7A) 5-13-14
Fig. 8. Capacitive Discharge
Fig. 9. Capacitive Discharge Waveform
Fig. 7. Cauer Thermal Network
i Ri () Ci (F)
1 0.015004 0.005397
2 0.071079 0.028026
3 0.051007 0.121930
4 0.002310 2.500000

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