NPTB00025 Datasheet by MACOM Technology Solutions

View All Related Products | Download PDF Datasheet
NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 1
FEATURES
• Optimized for broadband operation from
DC - 4000MHz
• 25W P3dB CW narrowband power
• 10W P3dB CW broadband power from 500-1000MHz
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 export control
Gallium Nitride 28V, 25W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Broadband
25 Watt, 28 Volt
GaN HEMT
RF Specifications (CW): VDS = 28V, IDQ = 225mA, Frequency = 3000MHz, TC = 25°C, Measured in Nitronex Test Fixture
Symbol Parameter Min Typ Max Units
P3dB Average Output Power at 3dB Gain Compression 22 25 -W
P1dB Average Output Power at 1dB Gain Compression 18 21 -W
GSS Small Signal Gain 12.5 13.5 -dB
hDrain Efficiency at 3dB Gain Compression 60 65 -%
yOutput mismatch stress, VSWR = 10:1, all phase
angles, POUT = PSAT
No Performance Degradation After Test
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol Parameter Max Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage -10 to 3 V
IGGate Current 40 mA
PTTotal Device Power Dissipation (Derated above 25°C) 33 W
qJC Thermal Resistance (Junction-to-Case) 5.25 °C/W
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature 200 °C
HBM Human Body Model ESD Rating (per JESD22-A114) 1A (>250V)
MM Machine Model ESD Rating (per JESD22-A115) M1 (>50V)
[\57 NITRON EX
NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 2
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency (MHz) ZS (W)ZL (W)
800 3.9 + j5.9 12.2 + j6.1
2000 3.7 - j5.1 7.7 - j1.1
3000 4.7 - j15.3 7.4 - j5.8
Figure 1 - Optimal Impedances for CW Performance, VDS = 28V, IDQ = 225mA
Symbol Parameter Min Typ Max Units
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 8mA) 100 - - V
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V) - 1 5 mA
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID = 8mA) -2.3 -1.8 -1.3 V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID = 225mA) -2.0 -1.5 -1.0 V
RON
On Resistance
(VGS = 2.0V, ID = 60mA) -0.44 0.55 W
ID
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS = 2.0V)
4.9 5.4 -A
DC Specifications: TC = 25°C
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted
Gain (:15) MTTF (hauls) 2x NITRON EX 2w 24 wk 10 A .3 5 z» 641 a ,. A h u a g 1 0 5 ; .. 5. E u ,. . u “I .E + so mA T: g + mum - am] 1000 3000 MHz = + 225 mA D s / + 7 7 + a... so + 450 mA + a; + DE 0 ¢ 20 ”u M In «I 42 «2 so )8 w u u m I:WY (dam) Pam (dBm) rlgure a - Iyplcal \va renormance an 70 so g A 59 E g E. = 4n 5 3 t (9 :n W E a 2n 5 1o 315 2a 30 :1 34 as an «a 42 u 4:? waam) in" 41 N 10‘ 1a“ u as i A >. u 10' g 5 E 45 an -; 1n‘ 5 E '- 'fi 1n‘ .5 44 DE 55 5 1". ‘P PW 1n‘ A: n 100 120 m 160 no 200 220 24a 40 4° '2“ " 2“ ‘“ 5° "5 Juncflan Tempgralure ('C) c. n romp-mum (‘11)
NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 3
Figure 2 - Typical CW Performance,
Over Current, Frequency = 3000MHz
Figure 3 - Typical CW Performance
Over Frequency
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted.
Figure 4 - Typical CW Performance Over Voltage,
Impedances Held Constant, Frequency = 1800MHz
Typical Device Characteristics
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted.
Figure 5 - MTTF of NRF1 Devices as a
Function of Junction Temperature
Figure 6 - Typical CW Performance
in Nitronex Test Fixture, Frequency = 3000MHz
RON EX
NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 4
NPT B0 002 0 A
035274 R
G041200000
V GATE
V DRAIN
RF OUT
RF IN
Nitronex
NPTB00020
8/01/2006
Figure 7 - NPTB00025 3000MHz Test Fixture
NPTB00025
032574R
G041200000
Name Value Vendor Part Number
C1 150uF Nichicon UPW1C151MED
C10 270uF United Chmi-Con ELXY630ELL271MK25S
C2, C8 0.1uF Kemet C1206C104K1RACTU
C3, C7 0.01uF AVX 120 61C103 K AT2 A
C4, C9 1.0 uF Panasonic ECJ-5YB2A105M
C5, C6, C11, C12 5.6pF ATC ATC600F5R6CT
C13 1.2pF ATC ATC600F1R2AT
R2 49.9 ohm Panasonic ERJ-6ENF49R9V
R3 0.33 ohm Panasonic ERJ-6RQFR33V
Substrate -Taconic RF35, t=30mil, er=3.5
Table 2: NPTB00025 3000MHz Test Fixture Bill of Materials
VGS
RFIN
VDS
RFOUT
NPTB00025, 3000MHz CW Production Test Fixture
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted. Additional design information and data available at www.nitronex.com.
TL3
281mils
424mils
C12
C13
R2
TL4
265mils
441mils
C6 R3 C10
+
C8 C9
C7
VDS
TL5
65mils
930mils
RFOUT
C11
C5
VGS
RFIN
C4
C3
C2
TL1
65mils
345mils
TL6
65mils
600mils
TL7
65mils
600mils
TL2
65mils
397mils
C1
+
NPTB00025
[\57 N TRON EX 2x 037 [0.94] REF .375 [9.53] .030 L [0 76]T ‘ «Drum .030 .1601005 I [0.76] l [4 0610.13] i } 2x 9,100 2x 0301.020 *Gote / [02.54] [2030.51] Sou rce [ A P 2x 050:.005 [1.271013] ¢ 200::005 [5.05:013] ’ 0051001 [0.13:003] "4"— REF [8 320 [3] .1 601.005 [4.061013] 052:,005 [1.561013] ¢ [ + 122i 020 51010 51] V f .550i.005 [13.97i0.13] OAOiDOS [1.021013]
NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 5
Ordering Information1
Part Number Description
NPTB00025B NPTB00025 in AC200B-2 Metal-Ceramic Bolt-Down Package
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
Figure 8 - AC200B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
N NITRON EX
NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 6
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
Important Notice
Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to
its products and services at any time and to discontinue any product or service without notice. Customers should obtain
the latest relevant information before placing orders and should verify that such information is current and complete. All
products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest
information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at
www.nitronex.com.
Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in
accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters
of each product is not necessarily performed.
Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their
product and applications using Nitronex semiconductor products or services. To minimize the risks associated with
customer products and applications, customers should provide adequate design and operating safeguards.
Nitronex does not warrant or represent that any license, either express or implied, is granted under any Nitronex patent right,
copyright, mask work right, or other Nitronex intellectual property right relating to any combination, machine or process in
which Nitronex products or services are used.
Reproduction of information in Nitronex data sheets is permitted if and only if said reproduction does not alter any of the
information and is accompanied by all associated warranties, conditions, limitations and notices. Any alteration of the
contained information invalidates all warranties and Nitronex is not responsible or liable for any such statements.
Nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical
implants into the body or any other application intended to support or sustain life. Should Buyer purchase or use Nitronex,
LLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold Nitronex, LLC, its
officers, employees, subsidiaries, affiliates, distributors, and its successors harmless against all claims, costs, damages,
and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, notwithstanding if such claim alleges that Nitronex was negligent
regarding the design or manufacture of said products.
Nitronex and the Nitronex logo are registered trademarks of Nitronex, LLC.
All other product or service names are the property of their respective owners.
© Nitronex, LLC 2012. All rights reserved.

Products related to this Datasheet

HEMT N-CH 28V 25W DC-4000MHZ