SMB10(8)J5.0(C)A - SMB10(8)J40(C)A Datasheet by Vishay Semiconductor Diodes Division

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SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com Vishay General Semiconductor
Revision: 16-Jan-18 1Document Number: 89424
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Density Surface Mount TRANSZORB®
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated pellet chip junction
Available in uni-directional and bi-directional
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: for uni-directional types the color band denotes
cathode end, no marking on bi-directional types
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
PRIMARY CHARACTERISTICS
VBR (uni-directional) 6.4 V to 49.1 V
VBR (bi-directional) 6.4 V to 49.1 V
VWM 5.0 V to 40 V
PPPM (uni-directional) 1000 W
PPPM (bi-directional) 800 W
IFSM (uni-directional only) 100 A
TJ max. 150 °C
Polarity Uni-directional, bi-directional
Package SMB (DO-214AA)
SMB (DO-214AA)
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) uni-directional PPPM (1)(2) 1000 W
bi-directional 800
Peak pulse current with a 10/1000 μs waveform IPPM (1) See next table A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only IFSM (2) 100 A
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
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SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com Vishay General Semiconductor
Revision: 16-Jan-18 2Document Number: 89424
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UNI-DIRECTIONAL
Notes
(1) Pulse test: tp 50 ms
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
(4) VF = 3.5 V at IF = 50 A (uni-directional only)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (V) (1)
TEST CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM
PEAK PULSE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MIN. MAX.
SMB10J5.0A 1AE 6.40 7.07 10 5.0 1000 108.7 9.2
SMB10J6.0A 1AG 6.67 7.37 10 6.0 1000 97.1 10.3
SMB10J6.5A 1AK 7.22 7.98 10 6.5 500 89.3 11.2
SMB10J7.0A 1AM 7.78 8.60 10 7.0 200 83.3 12.0
SMB10J7.5A 1AP 8.33 9.21 1.0 7.5 100 77.5 12.9
SMB10J8.0A 1AR 8.89 9.83 1.0 8.0 50 73.5 13.6
SMB10J8.5A 1AT 9.44 10.4 1.0 8.5 20 69.4 14.4
SMB10J9.0A 1AV 10.0 11.1 1.0 9.0 10 64.9 15.4
SMB10J10A 1AX 11.1 12.3 1.0 10 5.0 58.8 17.0
SMB10J11A 1AZ 12.2 13.5 1.0 11 5.0 54.9 18.2
SMB10J12A 1BE 13.3 14.7 1.0 12 5.0 50.3 19.9
SMB10J13A 1BG 14.4 15.9 1.0 13 1.0 46.5 21.5
SMB10J14A 1BK 15.6 17.2 1.0 14 1.0 43.1 23.2
SMB10J15A 1BM 16.7 18.5 1.0 15 1.0 41.0 24.4
SMB10J16A 1BP 17.8 19.7 1.0 16 1.0 38.5 26.0
SMB10J17A 1BR 18.9 20.9 1.0 17 1.0 36.2 27.6
SMB10J18A 1BT 20.0 22.1 1.0 18 1.0 34.2 29.2
SMB10J20A 1BV 22.2 24.5 1.0 20 1.0 30.9 32.4
SMB10J22A 1BX 24.4 26.9 1.0 22 1.0 28.2 35.5
SMB10J24A 1BZ 26.7 29.5 1.0 24 1.0 25.7 38.9
SMB10J26A 1CE 28.9 31.9 1.0 26 1.0 23.8 42.1
SMB10J28A 1CG 31.1 34.4 1.0 28 1.0 22.0 45.4
SMB10J30A 1CK 33.3 36.8 1.0 30 1.0 20.7 48.4
SMB10J33A 1CM 36.7 40.6 1.0 33 1.0 18.8 53.3
SMB10J36A 1CP 40.0 44.2 1.0 36 1.0 17.2 58.1
SMB10J40A 1CR 44.4 49.1 1.0 40 1.0 15.5 64.5
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SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com Vishay General Semiconductor
Revision: 16-Jan-18 3Document Number: 89424
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BI-DIRECTIONAL
Notes
(1) Pulse test: tp 50 ms
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Note
(1) Mounted on minimum recommended pad layout
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (V) (1)
TEST CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (3)
MAXIMUM
PEAK PULSE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MIN. MAX.
SMB8J5.0CA 1AE 6.40 7.25 10 5.0 2000 87.0 9.2
SMB8J6.0CA 1AG 6.67 7.37 10 6.0 2000 77.7 10.3
SMB8J6.5CA 1AK 7.22 7.98 10 6.5 1000 71.4 11.2
SMB8J7.0CA 1AM 7.78 8.60 10 7.0 400 66.7 12.0
SMB8J7.5CA 1AP 8.33 9.21 1.0 7.5 200 62.0 12.9
SMB8J8.0CA 1AR 8.89 9.83 1.0 8.0 100 58.8 13.6
SMB8J8.5CA 1AT 9.44 10.4 1.0 8.5 40 55.6 14.4
SMB8J9.0CA 1AV 10.0 11.1 1.0 9.0 20 51.9 15.4
SMB8J10CA 1AX 11.1 12.3 1.0 10 10 47.1 17.0
SMB8J11CA 1AZ 12.2 13.5 1.0 11 5.0 44.0 18.2
SMB8J12CA 1BE 13.3 14.7 1.0 12 5.0 40.2 19.9
SMB8J13CA 1BG 14.4 15.9 1.0 13 1.0 37.2 21.5
SMB8J14CA 1BK 15.6 17.2 1.0 14 1.0 34.5 23.2
SMB8J15CA 1BM 16.7 18.5 1.0 15 1.0 32.8 24.4
SMB8J16CA 1BP 17.8 19.7 1.0 16 1.0 30.8 26.0
SMB8J17CA 1BR 18.9 20.9 1.0 17 1.0 29.0 27.6
SMB8J18CA 1BT 20.0 22.1 1.0 18 1.0 27.4 29.2
SMB8J20CA 1BV 22.2 24.5 1.0 20 1.0 24.7 32.4
SMB8J22CA 1BX 24.4 26.9 1.0 22 1.0 22.5 35.5
SMB8J24CA 1BZ 26.7 29.5 1.0 24 1.0 20.6 38.9
SMB8J26CA 1CE 28.9 31.9 1.0 26 1.0 19.0 42.1
SMB8J28CA 1CG 31.1 34.4 1.0 28 1.0 17.6 45.4
SMB8J30CA 1CK 33.3 36.8 1.0 30 1.0 16.5 48.4
SMB8J33CA 1CM 36.7 40.6 1.0 33 1.0 15.0 53.3
SMB8J36CA 1CP 40.0 44.2 1.0 36 1.0 13.8 58.1
SMB8J40CA 1CR 44.4 49.1 1.0 40 1.0 12.4 64.5
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient RJA (1) 72 °C/W
Typical thermal resistance, junction to lead RJL 20 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SMB10J5.0A-M3/52 0.106 52 750 7" diameter plastic tape and reel
SMB10J5.0A-M3/5B 0.106 5B 3200 13" diameter plastic tape and reel
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SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com Vishay General Semiconductor
Revision: 16-Jan-18 4Document Number: 89424
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
SMB8J5.0C -
SMB8J40CA
SMB10J5.0 -
SMB10J40A
0.1
1
10
100
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
P
PPM
- Peak Pulse Power (kW)
td - Pulse Width (s)
0 25 50 75 100
100
75
50
25
0
125 150 175 200
TJ - Initial Temperature (°C)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
0
50
100
150
t
d
01.0 2.0 3.0 4.0
I
PPM
- Peak Pulse Current, % I
RSM
t - Time (ms)
tr = 10 µs
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 µs Waveform
as defined by R.E.A.
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
10
100
1000
10 000
10
1
Bi-Directional
100 200
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
VR, Measured at
Stand-Off
Voltage VWM
C
J
- Junction Capacitance (pF)
VWM - Reverse Stand-Off Voltage (V)
1.0
10
100
0.01 0.1 101 100 1000
t
p
- Pulse Duration (s)
Transient Thermal Impedance (°C/W)
10
200
100
100
110
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
8.3 ms Single Half Sine-Wave
Uni-Directional Only
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SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com Vishay General Semiconductor
Revision: 16-Jan-18 5Document Number: 89424
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.180 (4.57)
0.160 (4.06) 0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
SMB (DO-214AA)
Mounting Pad Layout
0.085 (2.159)
MAX.
0.220 REF.
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
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