IPT007N06N Datasheet by Infineon Technologies

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(in/frineon
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V
IPT007N06N
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
(iflreon Table 1 Key Performance Parameters @@ ={R0HS
2
OptiMOSTMPower-Transistor,60V
IPT007N06N
Rev.2.1,2014-02-20Final Data Sheet
Tab
12345
8
67
HSOF
Drain
Tab
Gate
Pin 1
Source
Pin 2-8
1Description
Features
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 60 V
RDS(on),max 0.75 m
ID300 A
Qoss 227 nC
QG(0V..10V) 216 nC
Type/OrderingCode Package Marking RelatedLinks
IPT007N06N PG-HSOF-8-1 007N06N -
1) J-STD20 and JESD22
(ifileon
3
OptiMOSTMPower-Transistor,60V
IPT007N06N
Rev.2.1,2014-02-20Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
(ifileon Table 2 Maximum ratings Table 3 Thermal characteristics
4
OptiMOSTMPower-Transistor,60V
IPT007N06N
Rev.2.1,2014-02-20Final Data Sheet
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID
-
-
-
-
-
-
300
300
52
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=40K/W
1)
Pulsed drain current 2) ID,pulse - - 1200 A TC=25°C
Avalanche energy, single pulse 3) EAS - - 1100 mJ ID=150A,RGS=25
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 375 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;
DIN IEC 68-1: 55/175/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - 0.2 0.4 K/W -
Device on PCB, minimal footprint RthJA - - 62 K/W -
Device on PCB, 6 cm² cooling area 1) RthJA - - 40 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
infineon Table 4 Static characteristics Table 5 Dynamic characteristics Table 6 Gate char e characteristics ‘
5
OptiMOSTMPower-Transistor,60V
IPT007N06N
Rev.2.1,2014-02-20Final Data Sheet
4Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=280µA
Zero gate voltage drain current IDSS -
-
0.5
10
1
100 µA VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.66
0.85
0.75
1mVGS=10V,ID=150A
VGS=6V,ID=75A
Gate resistance RG- 1.8 2.7 -
Transconductance gfs 160 320 - S |VDS|>2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 16000 21280 pF VGS=0V,VDS=30V,f=1MHz
Output capacitance Coss - 3400 4522 pF VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance Crss - 229 458 pF VGS=0V,VDS=30V,f=1MHz
Turn-on delay time td(on) - 38 - ns VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8
Rise time tr- 18 - ns VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8
Turn-off delay time td(off) - 76 - ns VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8
Fall time tf- 22 - ns VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8
Table6Gatechargecharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 67 - nC VDD=30V,ID=100A,VGS=0to10V
Gate charge at threshold Qg(th) - 47 - nC VDD=30V,ID=100A,VGS=0to10V
Gate to drain charge Qgd - 39 - nC VDD=30V,ID=100A,VGS=0to10V
Switching charge Qsw - 58 - nC VDD=30V,ID=100A,VGS=0to10V
Gate charge total Qg- 216 287 nC VDD=30V,ID=100A,VGS=0to10V
Gate plateau voltage Vplateau - 4.2 - V VDD=30V,ID=100A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 192 255 nC VDS=0.1V,VGS=0to10V
Output charge Qoss - 227 - - VDD=30V,VGS=0V
1) See Gate charge waveforms for parameter definition
(ifileon
6
OptiMOSTMPower-Transistor,60V
IPT007N06N
Rev.2.1,2014-02-20Final Data Sheet
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - 300 A TC=25°C
Diode pulse current IS,pulse - - 1200 A TC=25°C
Diode forward voltage VSD - 0.87 1 V VGS=0V,IF=150A,Tj=25°C
Reverse recovery time trr - 87 174 ns VR=30V,IF=100A,diF/dt=100A/µs
Reverse recovery charge Qrr - 144 - nC VR=30V,IF=100A,diF/dt=100A/µs
(imeon
7
OptiMOSTMPower-Transistor,60V
IPT007N06N
Rev.2.1,2014-02-20Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
400
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 25 50 75 100 125 150 175 200
0
50
100
150
200
250
300
350
ID=f(TC);VGS10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102
10-1
100
101
102
103
104
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
(ifleon
8
OptiMOSTMPower-Transistor,60V
IPT007N06N
Rev.2.1,2014-02-20Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
200
400
600
800
1000
1200
7 V
10 V 6 V
5.5 V
5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[m]
0 200 400 600 800 1000 1200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
5 V
5.5 V
6 V
7 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
02468
0
200
400
600
800
1000
1200
175 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 50 100 150 200
0
50
100
150
200
250
300
350
400
450
gfs=f(ID);Tj=25°C
(imeon
9
OptiMOSTMPower-Transistor,60V
IPT007N06N
Rev.2.1,2014-02-20Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[m]
-60 -20 20 60 100 140 180
0.0
0.4
0.8
1.2
1.6
max
typ
RDS(on)=f(Tj);ID=150A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0
1
2
3
4
2800 µA
280 µA
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 20 40 60
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
100
101
102
103
104
25 °C
175 °C
25 °C, 98%
175 °C, 98%
IF=f(VSD);parameter:Tj
infineon V9 srm Gum a“...
10
OptiMOSTMPower-Transistor,60V
IPT007N06N
Rev.2.1,2014-02-20Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
100101102103
100
101
102
103
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 50 100 150 200 250
0
2
4
6
8
10
12
48 V
30 V
12 V
VGS=f(Qgate);ID=100Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
52
54
56
58
60
62
64
66
68
VBR(DSS)=f(Tj);ID=1mA
Gate charge waveforms
(imeon a L1 (\ 1:1 \‘/ T 1 K 1 X 1 N 4 EL. E1 1 =7 1 g 1 1 1 m 1 1 I g E J x 1; J 1] Mold Hash area < 4="">
11
OptiMOSTMPower-Transistor,60V
IPT007N06N
Rev.2.1,2014-02-20Final Data Sheet
6PackageOutlines
Z8B00169619
REVISION
ISSUE DATE
EUROPEAN PROJECTION
02
20-02-2014
DOCUMENT NO.
E5
E4
K1
e
MILLIMETERS
A
DIM MIN MAX
INCHES
MIN MAX
b1
c
D
D2
E
E1
N
L
2.20 2.40 0.087 0.094
9.70
0.40
10.28
9.70
1.60
9.90
0.60
10.58
10.10
2.10
0.382
0.016
0.405
0.382
0.063
0.390
0.024
0.416
0.398
0.083
8 8
1.20 (BSC) 0.047 (BSC)
b 0.70 0.90 0.028 0.035
1) partially covered with Mold Flash
b2 0.42 0.50 0.017 0.020
H
H1
11.48 11.88 0.452 0.468
H2 7.15 0.281
H3 3.59 0.141
H4 3.26 0.128
L1 0.70 0.028
3.30 0.130
7.50 0.295
8.50 0.335
9.46 0.372
6.55 6.75 0.258 0.266
4.18 0.165
L4 1.00 1.30 0.039 0.051
L2 0.60 0.024
2
SCALE
0
4mm
0
2
Figure1OutlinePG-HSOF-8-1,dimensionsinmm/inches
(ifileon
12
OptiMOSTMPower-Transistor,60V
IPT007N06N
Rev.2.1,2014-02-20Final Data Sheet
RevisionHistory
IPT007N06N
Revision:2014-02-20,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-02-06 Release of final version
2.1 2014-02-20 Update Diagram 12
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