MRF148A Datasheet by MACOM Technology Solutions

View All Related Products | Download PDF Datasheet
MACOMW (a CASE 211417, STYLE 2 U S MAXIMUM RATINGS Raling Symbol Value Unit Dram—Source Voltage VDss 120 Vdc Drawn—Gale Voltage VDGO 120 Vdc GaleaSource Voltage V65 1: 40 Vdc Dram Current 7 Dommuous ID 6 0 Ad: Talal Device Dissipation @ Tc : 25 c PD 115 Wans Derale above ZS’C 0 55 WI C Staage Temperature Range Tstg 765 ID i ISO ‘C Operallng Juncuan Temperature TJ 200 ‘c THERMAL CHARACTERISTICS Chalaclerislic Symbol Max Unit Thermal Resislanne. Juncmn to Case Raw 1 52 "C/W packaging MOS dewces should be observed NOTE — mum — MOS devices are suscepllble lo damage from electruslallc charge. Reasonable precauuons In handling and www macum wm
Linear RF Power FET
30W, to 175MHz, 50V
Rev. V1
MRF148A
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1
Product Image
Designed for power amplifier applications in industrial,
commercial and amateur radio equipment to 175MHz.
Superior high order IMD
IMD(d3) (30W PEP): 35 dB (Typ.)
IMD(d11) (30W PEP): 60 dB (Typ.)
Specified 50V, 30MHz characteristics:
Output power: 30W
Gain: 18dB (Typ.)
Efficiency: 40% (Typ.)
100% tested for load mismatch at all phase angles
with 30:1 VSWR
Lower reverse transfer capacitance (3.0 pF typ.)
MACOMW ELECTRICAL CHARACTERISTICS (Tc : 25 C unless othelwlse noted) Characteristic | Symbol I Min Typ I Max UniI OFF CHARACTERISTICS Drawn—Source Breakdown Vonage (Veg : 0 \D : I0 mA) VlER)DSS 125 7 7 Vdc Zero Gate Vollage Dram Currenl (VDS : 50 V V65 : U) IDSS — — I U mAdc Gale—Body Leakage Current (VGS = 20V, VDS = 0) IGSS — — I00 nAdC ON CHARACTERISTICS Gale Threshold Vonage (VDS : 10 V In : 10 mA] VGSuh) l o 2 5 5 u Vdc Drawn—Source kaVolIage Wes : 10 V. In : 2,5 A) VDSW, l o 3 o 5 u Vdc Forward Transconductanoe (V03 = Io V. ID = 2 5 A) 915 o 8 ‘ 2 — mhos DYNAMIC CHARACTERISTICS Input Capacnance (VDS : 50 \L VGS : 0‘ I: I 0 MHZ) CISS 7 52 7 pF OquuI Capacllance (VDS = 50 V, VGS = 0, I = 1 0 MHZ) C055 7 35 7 pF Reverse Transler Capaulance [VDS : 50 V, VGS : 0‘ I: I 0 MHZ) Crss — 3 D — pF FUNCTIONAL TESTS (555) Common Source Amplifier Power Gain (30 mm em 7 r5 7 dB NDD=5W Pom=3OW(FEF).IDQ=1OUmA| (175 MHz) 7 ‘5 — Dvaln Efficiency (30 W PEP) V) 7 40 7 Wu NDD=5DVI=30MHLIDQ=100mA| (30 w CW) 7 50 7 Intermodumlon Dws‘omon dB erD : 50 \L PW. : 30 w (PEP), IMD(d3) 7 735 7 (:30‘ 30 001 MHz ‘00: IOO mA) IMDwm — —60 — Load Mismalm w (vDD = 50 v, Pom = 30 w (PEP), I = 30, 30 001 MHz No Degradation In Output Power IDQ = 100 mA. vsz 30 1 313” Phase Ang‘es) CLASS A PERFORMANCE Intermodmzuon Drsmman (I) and Power Garn Gps 7 20 7 dB (VDD = 50 v. PM. = In w (PEPI. f1 = 30 MHz. IMDmr — —50 — 12:30 um MHz. I30: V 0A) \MDrd943) 7 40 7 NOTE I To MIL—STD— |3|| Verslon A‘ Test Method 22043, Two Tone Reference Each Tonev www macum wm
Linear RF Power FET
30W, to 175MHz, 50V
Rev. V1
MRF148A
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
MACOMW BIAS _ 0—111 v , >—_L 01 _L = l m 02 T2 RF R3 T RF Tl : 0U PUT NFUT | CE | R2 = = = ‘53 m 01‘ (32,01 CACE‘CG — D I u? Ceramic Chip or Equwa‘eni R1. R2 —200 0. 1/2 W Carbon C7710||EIOOVEIEL1IDIWC R3747LL1I’2WCarlin CB—1DDpF Dipped Mica R4—4701L10WCarbon L1 7VK200 20MB Femte Choke or Equivalent (3 fl uH) T1 74 1 Impedance Transformer L2 — Ferrite Bead(s], 2 0 pH T2 — 1:2 Impedance Transformer Figure 1. 2.0 to 50 MHz Broadband Tesl Circuit 25 a E ZCI : A E 53 3 i g 15 g 3 . 8 m IDQ 10D m ,_ 3 10 PM: 30 w (PEP‘i E E 0 vDD : 50v é z“. 5 “9 AJV 5 CI . U , 2 : 10 20 50 1M ZOE 3 35 1 1 5 2 23 1 FREQUENCVIVHzi Pm \NPUT POWERMATTSi Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power www macum wm
Linear RF Power FET
30W, to 175MHz, 50V
Rev. V1
MRF148A
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
MACOMW MD TNTERMODULATION USTORHONME) VDD = 51! V |DQ= TOG mA TONE SEPARATION i kHz d: (1 ii] 20 2000 a i. = E 5 g m 3 a $10M E .1 a r: g g 3' 5 3O 40 J] i Pout OUTPU' POWER [WATTS PEP} Figure 4. IMD versus Pour RF INPUT C i— 0- Ti i c1- 91 pF Unelco Type MCM 01/010 02, c4 —0,1iAF Ene Red Cap (:3 — Allen Bradiey 680 pF Feed Thru c5 — 1 0 HF. so Vdc Electrolytic cs — 15 pF UnelcoType J101 C7 — 24 pF Unelco Type MCM 01/010 L1— 2 Tumsm AWG, sue" ID DUT L2 —4 Turns #18 AWG, 5116" ID R1—l00hm,1/4 W Carbon R2 —2000 Ohm. 1/4 W Carbon RFCI —VK200 21MB T1 —A 1 Transiormen 1 75“ Submlnlamre Coaxial Cable Figure 6. 150 MHz Test Circuit 2 TD, DRAIN CURRENT [AMPST Figure 5. Common Source Unity Gain Frequency versus Drain Current C7 in RF OUTPUT T1 74 1 Impedance Rahn E-Un —>i25$2 Transformer, Line Impedance : 25 u www macum wm
Linear RF Power FET
30W, to 175MHz, 50V
Rev. V1
MRF148A
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
4
MACOMW w 7 A 5 g a 3 a E E ,_ 2 w 2 g & 8 5 ‘ z ‘2’ 07 g E 05 :3 vDs=wv 903 - mfitho 02 o 012345678910 . 1 v65. GATESOURCE VOLTAGE (VOLTS) v05, DRAIMSOURCE VOLTAGE (VOLTS) Figure 7, Gate Voltage versus Drain current Figure a, DC safe Operating Area (SOA) Pom=3DWPEP ‘ LC " * 5 “ GaieShunled By1000 _7 ‘ ‘ / «r r ’ g5 (:2ACIMH2 . x 73 ‘ k m . . ‘ ’\ ZOL' = Conlugaie of ihe agiimum load Impedance mio which the dewoe output operates at a glven ouiput pmr, voiizge and frewency Ham. 9. Impedance Coordinams — 50 Ohm Characterisric Impedance www.macum.oam hugs:llwww.macam.comlsugmfl
Linear RF Power FET
30W, to 175MHz, 50V
Rev. V1
MRF148A
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5
MAGGIE RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physlcal structure at a MOSFET results in capacitors between the termmals. The metal oxide gate stmcture determines the capacitors from gate—to—dmin (CW)- and gate—to—source (Cgsl. The PM Junction torrned during the fabrication ot the RF MOSFET results In a junction capaci- tance from dI'ain—to—source (Gas). These capacitances are characterized as Input (0:55). output (Cm) and reverse transler (Cm) capacitances on data sheets, The relationszs between the imer—temtinal mpaci- tances and those given on data sheets are shown below. The (Dis, can be specified in two ways: 1, Drain shorted to source and positive voltage at the gate 2. Positive voltage ot the drain in respectto source and zero volts at the gate In the latter case the numbers are lower. However, neither method represents the actual operat- Ing commons in RF applications. DRAN Cg: GAlE—< c-_="c,fl" t="" c,="" cd:="" c.“="cw" t="" ch="" 1="" 9-4“="" source="" linearity="" and="" gain="" characteristics="" in="" addition="" to="" the="" typical="" imd="" and="" power="" gain="" data="" presented,="" figure="" 5="" may="" give="" the="" designer="" additional="" intorma-="" tionon="" the="" capaoiimesotthis="" device,="" the="" graph="" represents="" the="" small="" signal="" unity="" current="" gain="" frequency="" at="" a="" given="" drain="" current="" level,="" fine="" is="" equivalent="" to="" 17="" for="" bipolar="" transistors="" since="" this="" test="" is="" performed="" at="" a="" last="" sweep="" speed,="" heating="" ot="" the="" device="" does="" not="" occur.="" thus,="" in="" normal="" use,="" the="" higher="" temperatures="" may="" degrade="" these="" characteristics="" to="" some="" extent.="" drain="" characteristics="" one="" figure="" at="" merit="" for="" a="" fet="" is="" its="" static="" resistance="" in="" the="" full—on="" condition.="" this="" on—resistance.="" v95“,="" occurs="" in="" the="" iinearregion="" ot="" the="" output="" charactensttc="" and="" is="" specmed="" under="" specific="" test="" conditions="" tor="" gate—source="" voltage="" and="" drain="" current,="" for="" mosfets.="" vow...)="" has="" a="" positive="" temperature="" comment="" and="" constitutes="" an="" important="" design="" constderahon="" at="" high="" temperatures.="" because="" it="" contributes="" to="" the="" power="" dissipation="" mm="" the="" device="" gate="" characteristics="" the="" gate="" or="" the="" rf="" mosfet="" is="" a="" polysilicon="" material,="" and="" is="" electrically="" isolated="" from="" the="" source="" by="" a="" layer="" at="" oxide.="" the="" input="" resistance="" is="" very="" high="" —="" on="" the="" order="" of="" 10°="" ohms="" —="" resulting="" in="" a="" leakage="" current="" 01a="" tew="" nanoamperes.="" gate="" control="" is="" achieved="" by="" applying="" a="" positive="" vottage="" slightly="" in="" excess="" oi="" the="" gate—to—source="" threshold="" voltage.="" vesuv-="" gate="" voltage="" rating="" —="" never="" exceed="" the="" gate="" vottage="" rating.="" exceeding="" the="" rated="" v55="" can="" result="" in="" permanent="" damage="" to="" the="" oxide="" layer="" in="" the="" gate="" region.="" gate="" termination="" —="" the="" gates="" at="" these="" devices="" are="" essentially="" capacitors="" circuits="" that="" leave="" the="" gate="" open—cir-="" cuited="" or="" tloating="" should="" be="" avoided.="" these="" conditions="" can="" result="" in="" tum—on="" oi="" the="" devrces="" due="" to="" voltage="" build—up="" on="" the="" input="" capacitor="" due="" to="" leakage="" currents="" or="" pickup="" gate="" protection="" —="" these="" devices="" do="" not="" have="" an="" internal="" monolithic="" zener="" diode="" from="" gate-to—source.="" ll="" gate="" protection="" is="" manned,="" an="" external="" zener="" diode="" is="" recommended,="" www.macom.oom="">
Linear RF Power FET
30W, to 175MHz, 50V
Rev. V1
MRF148A
6
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
6
MACOMW EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Colleclor V V . Drain Emmer V . Source Base , .. Gate VLERKDE - szswss Vcac - VDGO I: , ID ICES - IDSS lac . less VsEIw: Ves-w VCEIsil: . VDSIMI Cm - C‘s; Ca: - cuss We » . 9's \ ICE, _ mam Reasm= If“ - manni— ID PACKAGE DIMENSIONS Mavis I :mmmwc Nu nzmmms Fm msl mswvsz sums mu: CASE 211—07 ISSUE N 2 commune DIMENSION wcu www macum wm httgs://www.macnm.comlsuggon
Linear RF Power FET
30W, to 175MHz, 50V
Rev. V1
MRF148A
7
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
7
MACOM www macum com Img Ilwww macnm com/suggnn
Linear RF Power FET
30W, to 175MHz, 50V
Rev. V1
MRF148A
8
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
8
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.

Products related to this Datasheet

FET RF 120V 175MHZ 211-07