SUD20N10-66L Datasheet by Vishay Siliconix

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Vishay Siliconix
SUD20N10-66L
Document Number: 62815
S13-0629-Rev. A, 25-Mar-13
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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N-Channel 100 V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
•100 % R
g and UIS Tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
DC/DC Converters
DC/AC Inverters
Motor Drives
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Base on TC = 25 °C.
PRODUCT SUMMARY
VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)
100 0.066 at VGS = 10 V 18.2 19.8
0.080 at VGS = 4.5 V 13.2
TO-252
SG D
Top View
Drain Connected to Tab
Ordering Information:
SUD20N10-66L-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
16.9
A
TC = 70 °C 13.6
Pulsed Drain Current (t = 300 µs) IDM 25
Avalanche Current IAS 15
Single Avalanche EnergyaL = 0.1 mH EAS 11.25 mJ
Maximum Power DissipationaTC = 25 °C PD
41.7b
W
TA = 25 °Cc2.1
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mount)cRthJA 60 °C/W
Junction-to-Case (Drain) RthJC 3
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Vishay Siliconix
SUD20N10-66L
Document Number: 62815
S13-0629-Rev. A, 25-Mar-13
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 3
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA
Zero Gate Voltage Drain Current IDSS
VDS = 100 V, VGS = 0 V 1
µAVDS = 100 V, VGS = 0 V, TJ = 125 °C 50
VDS = 100 V, VGS = 0 V, TJ = 150 °C 250
On-State Drain CurrentaID(on) V
DS 10 V, VGS = 10 V 20 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 10 V, ID = 6.6 A 0.055 0.066
VGS = 4.5 V, ID = 6 A 0.066 0.080
Forward Transconductanceagfs VDS = 15 V, ID = 6.6 A 25 S
Dynamicb
Input Capacitance Ciss
VDS = 50 V, VGS = 0 V, f = 1 MHz
860
pFOutput Capacitance Coss 85
Reverse Transfer Capacitance Crss 40
Total Gate ChargecQg
VDS = 50 V, VGS = 10 V, ID = 6.6 A
19.8 30
nC
Gate-Source ChargecQgs 3.6
Gate-Drain ChargecQgd 4.1
Gate Resistance Rgf = 1 MHz 0.4 2 4
Tur n - O n D e l ay Timectd(on)
VDD = 50 V, RL = 9.6
ID 5.2 A, VGEN = 10 V, Rg = 1
816
ns
Rise Timectr11 20
Turn-Off Delay Timectd(off) 18 27
Fall Timectf510
Tur n - O n D e l ay Timectd(on)
VDD = 50 V, RL = 9.6
ID 5.2 A, VGEN = 4.5 V, Rg = 1
38 57
Rise Timectr58 87
Turn-Off Delay Timectd(off) 18 27
Fall Timectf816
Drain-Source Body Diode Ratings and Characteristicsb TC = 25 °C
Continuous Current IS16.9 A
Pulsed Current ISM 25
Forward VoltageaVSD IF = 5.2 A, VGS = 0 V 0.8 1.5 V
Reverse Recovery Time trr
IF = 5.2 A, dI/dt = 100 A/µs
34 51 ns
Peak Reverse Recovery Current IRM(REC) 35A
Reverse Recovery Charge Qrr 50 75 nC
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Vishay Siliconix
SUD20N10-66L
Document Number: 62815
S13-0629-Rev. A, 25-Mar-13
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
Transconductance
0
5
10
15
20
25
0 0.5 1 1.5 2
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 7 V
V
GS
= 3 V
VGS = 4 V
0
1
2
3
4
5
0 1 2 3 4
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
10
20
30
40
0 3 6 9 12
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
T
= 25
C
T
C
= 125
°
C
T
C
= - 55
°
C
On-Resistance vs. Drain Current
On-Resistance vs. Gate-to-Source Voltage
Gate Charge
0.04
0.05
0.06
0.07
0.08
0.09
0 5 10 15 20 25
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
V
GS
=4.5V
VGS = 10 V
0.03
0.06
0.09
0.12
0.15
2 4 6 8 10
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
T
J
= 125 °C
TJ = 25 °C
I
D
= 6.6 A
0
2
4
6
8
10
0 6 12 18 24
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 80 V
V
DS
= 25 V
V
DS
= 50 V
I
D
= 6.6 A
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Vishay Siliconix
SUD20N10-66L
Document Number: 62815
S13-0629-Rev. A, 25-Mar-13
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Capacitance
On-Resistance vs. Junction Temperature
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0
250
500
750
1000
1250
0 20 40 60 80 100
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.45
0.9
1.35
1.8
2.25
- 50 - 25 0 25 50 75 100 125 150
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
VGS = 4.5 V, ID = 6 A
VGS = 10 V, ID = 6.6 A
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
Current Derating
1.2
1.5
1.8
2.1
2.4
2.7
- 50 - 25 0 25 50 75 100 125 150
VGS(th) (V)
TJ - Temperature (°C)
I
D
= 250 μA
102
107
112
117
122
127
- 50 - 25 0 25 50 75 100 125 150
V
DS
(V) Drain-to-Source Voltage
T
J
- Temperature (°C)
I
D
= 250 μA
0
5
10
15
20
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
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Vishay Siliconix
SUD20N10-66L
Document Number: 62815
S13-0629-Rev. A, 25-Mar-13
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62815.
Single Pulse Avalanche Current Capability vs. Time
1
10
0.00010.000010.000001 0.001 0.01
I
DAV
(A)
Time (s)
T
J
= 25 °C
T
J
= 150 °C
Safe Operating Area
0.01
0.1
1
10
100
0.1 1 10 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
DC, 10 s 1 s, 100 ms
Limited by RDS(on)*
1 ms
TC
= 25 °
C
Single Pulse
BVDSS Limited
10 ms
100 μs
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 11010-1
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
30
0.02
0.05
Single Pulse
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Package Information
www.vishay.com Vishay Siliconix
Revision: 16-May-16 1Document Number: 71197
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-252AA Case Outline
Notes
Dimension L3 is for reference only.
L3
D
L4
L5
bb2
e1
E1
D1
C
A1
gage plane height (0.5 mm)
e
b3
E
C2
A
L
H
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
D 5.97 6.22 0.235 0.245
D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
— VISHAY.. RECOMMENDED MINIMUM PADS FOR D (5 59m n 420 110.668) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} Docq'vve'n Number 72594
Application Note 826
Vishay Siliconix
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.420
(10.668)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
0.243
(6.180)
0.087
(2.202)
0.090
(2.286)
Return to Index
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Revision: 08-Feb-17 1Document Number: 91000
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