2SA1576UB Datasheet by Rohm Semiconductor

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39“.!!! ‘L Data Sheet www.mhrrmom
2SA1576UB
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c 2009 ROHM Co., Ltd. All rights reserved. 2010.09 - Rev.D
General purpose small signal amplifier
(50V, 0.15A)
2SA1576UB
Applications Dimensions (Unit : mm)
General purpose small signal amplifier.
Features
1) Excellent hFE linearity.
2) Complements the 2SC4081UB.
Structure
PNP silicon epitaxial planar transistor.
Absolute maximum ratings (Ta=25C)
1
1 Pw=1ms Single pulse
2 Each terminal mounted on a recommended land
2
Parameter
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
60 V
V
V
mA
mA
˚C
˚C
50
6
150
mW
200
200
150
55 to +150
Symbol Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Electrical characteristics (Ta=25C)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
6
120
140
4.0
100
100
390
0.5
5.0
VI
C
= 50μA
I
C
= 1mA
I
E
= 50μA
V
CB
= 60V
V
EB
= 6V
V
CE
= 6V, I
C
= 1mA
I
C
/I
B
= 50mA/5mA
V
CE
= 12V, I
E
=2mA, f=100MHz
V
CB
= 12V, I
E
=0A, f=1MHz
V
V
nA
nA
V
MHz
pF
Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
UMT3F
Each lead has same dimensions
2.0
0.32
0.65 0.65
1.3
2.1
1.25
0.4250.425
(1) (2)
(3)
0.9
0.530.53
0.13
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : F
∗ = Denotes h
FE
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2/2
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c 2009 ROHM Co., Ltd. All rights reserved. 2010.09 - Rev.D
Data Sheet 2SA1576UB
hFE rank categories
Rank
hFE
Q
120 to 270
R
180 to 390
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
0.2
COLLECTOR CURRENT : Ic (
mA)
50
20
10
5
2
1
0.5
0.2
0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VCE= 6V
BASE TO EMITTER VOLTAGE : VBE (
V
)
Ta=100˚C
25˚C
40˚C
Fig.2 Grounded emitter output
characteristics (I)
0.4
4
8
1.20
2
6
10
0.8 1.6 2
.0
3.5μA
7.0
10.5
14.0
17.5
21.0
24.5
28.0
31.5
I
B
=0
Ta=25˚C
35.0
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO MITTER VOLTAGE : V
CE
(
V
)
Fig.3 Grounded emitter output
characteristics (II)
40
80
5
3421
20
60
100
0
I
B
=0
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V
)
50μA
100
150
200
250
500
450
400
350
300
Fig.4 DC current gain vs.
collector current (I)
500
200
100
50
0.2 0.5 12510 20 50 10
0
DC CURRENT GAIN : h
FE
Ta=25˚C V
CE
= 5V
3V
1V
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 DC current gain vs.
collector current (II)
500
200
100
50
0.2 0.5 12510 20 50 10
0
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
V
CE
= 6V
Ta=100˚C
40˚C
25˚C
Fig.6 Collector-emitter saturation
voltage vs. collector current (
I)
0.1
0.2 0.5 12510 20 50 10
0
1
0.5
0.2
0.05
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA)
I
C
/I
B
=50
20
10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (
V
)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
0.1
0.2 0.5 12510 20 50 10
0
1
0.5
0.2
0.05
COLLECTOR CURRENT : I
C
(
mA)
l
C
/l
B
=10
Ta=100˚C
25˚C
40˚C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (
V)
Fig.8 Gain bandwidth product vs.
emitter current
50 10
0.5 20
50
100
200
500
12 510
EMITTER CURRENT : I
E
(
mA)
TRANSITION FREQUENCY : f
T
(
MHz)
Ta=25˚C
V
CE
= 12V
Fig.9
Collector output capacitance vs
.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V
)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
0.5 20
2
5
10
12510
20
Cib
Cob
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
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