AOT(F)8N80 Datasheet by Alpha & Omega Semiconductor Inc.

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AOT8N80L/AOTF8N80
800V, 7.4A N-Channel MOSFET
General Description Product Summary
V
DS
ID (at VGS=10V) 7.4A
RDS(ON) (at VGS=10V) < 1.63
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAR
EAR
EAS
Peak diode recovery dv/dt dv/dt
TJ, TSTG
TL
Symbol
R
θ
JA
RθCS
RθJC
* Drain current limited by maximum junction temperature.
0.51
--
Units
°C/W65
0.5
65
2.5
PD
TC=25°C
Thermal Characteristics
300
-55 to 150
2.0 0.4
Avalanche Current
C
217
Single pulsed avalanche energy
G
433
3.8
Repetitive avalanche energy
C
Gate-Source Voltage
TC=100°C A
26Pulsed Drain Current
C
Continuous Drain
Current
TC=25°C 7.4
ID4.6
7.4*
4.6*
V±30
The AOT8N80L & AOTF8N80 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
V
UnitsParameter
Absolute Maximum Ratings T
A
AOT8N80L AOTF8N80
900V@150
Drain-Source Voltage 800
Maximum Case-to-sink A
Maximum Junction-to-Case
mJ
°C/W
°C/W
Derate above 25
o
C
Parameter AOT8N80L AOTF8N80
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
5
50245
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
A,D
Power Dissipation B
A
W
W/ oC
°C
mJ
V/ns
°C
G
D
S
GDS
GDS
Top View
TO
-
220F
TO
-
220
AOT8N80L AOTF8N80
D
Rev1.0: Sepetember 2017 www.aosmd.com Page 1 of 6
ALPHA & OMEGA SEMICDND UCTDR
Symbol Min Typ Max Units
800
900
BVDSS
/∆TJ 0.86 V/ oC
1
10
IGSS Gate-Body leakage current ±100 nΑ
VGS(th) Gate Threshold Voltage 3.3 3.9 4.5 V
RDS(ON) 1.35 1.63
gFS 9 S
VSD 0.72 1 V
ISMaximum Body-Diode Continuous Current 7.4 A
ISM 26 A
Ciss 1100 1375 1650 pF
Coss 70 101 132 pF
Crss 6 11 16 pF
Rg1.7 3.5 5.3
Qg20 26 32 nC
Qgs 7.3 nC
Qgd 9.1 nC
tD(on) 35 ns
tr51 ns
tD(off) 69 ns
tf41 ns
trr 380 484 585 ns
Qrr 4.5 6 7.5 µC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
Gate Drain Charge
Total Gate Charge
VGS=10V, VDS=640V, ID=8A
Gate Source Charge
Static Drain-Source On-Resistance VGS=10V, ID=4A
Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=8A,
RG=25
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Turn-On Rise Time
Body Diode Reverse Recovery Time
Reverse Transfer Capacitance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
VDS=5V, ID=250µA
VDS=640V, TJ=125°C
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current VDS=800V, VGS=0V
BVDSS
ID=250µA, VGS=0V
µA
VDS=0V, VGS=±30V
V
Drain-Source Breakdown Voltage
IF=8A,dI/dt=100A/µs,VDS=100V
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
IS=1A,VGS=0V
VDS=40V, ID=4A
Forward Transconductance
Diode Forward Voltage
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.8A, VDD=150V, RG=25, Starting TJ=25°C
Rev1.0: Sepetember 2017 www.aosmd.com Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0
3
6
9
12
15
0 5 10 15 20 25 30
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=5V
5.5V
10V
6V
0.1
1
10
100
2 4 6 8 10
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
-55°C
VDS=40V
25
°
C
125°C
0.5
1.0
1.5
2.0
2.5
3.0
0 2 4 6 8 10 12
RDS(ON) ()
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
VGS=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
6.5V
Rev1.0: Sepetember 2017 www.aosmd.com Page 3 of 6
441L1’Iili 4k ()A42?(2A SEMICONDUCTOR 1ODus 10mg
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 8 16 24 32 40
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=640V
ID=8A
1
10
100
1000
10000
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
0.01
0.1
1
10
100
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT8N80L (Note F)
10µs
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
0.01
0.1
1
10
100
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF8N80 (Note F)
10µs
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
1s
0
2
4
6
8
10
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev1.0: Sepetember 2017 www.aosmd.com Page 4 of 6
ALPI-IA&0MEGA SEMICONDUCTOR TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N80L (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.51°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Ton
T
P
D
Single Pulse
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N80 (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse Ton
T
P
D
Rev1.0: Sepetember 2017 www.aosmd.com Page 5 of 6
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t r
d(on)
ton
td(off) tf
toff
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
trr
AR
AR
Rev1.0: Sepetember 2017 www.aosmd.com Page 6 of 6

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