ST300SPbf Series Datasheet by Vishay Semiconductor Diodes Division

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VS-ST300SPbF Series
www.vishay.com Vishay Semiconductors
Revision: 27-Sep-17 1Document Number: 94406
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Phase Control Thyristors
(Stud Version), 300 A
FEATURES
Center amplifying gate
International standard case TO-118 (TO-209AE)
Hermetic metal case with ceramic insulator
Threaded studs UNF 3/4"-16UNF-2A or
ISO M24 x 1.5
Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
DC motor controls
Controlled DC power supplies
AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 300 A
VDRM/VRRM 400 V, 800 V, 1200 V, 1600 V,
1800 V, 2000 V
VTM 1.28 V
IGT 200 mA
TJ-40 °C to +125 °C
Package TO-118 (TO-209AE)
Circuit configuration Single SCR
TO-118 (TO- 209AE)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
300 A
TC75 °C
IT(RMS) 470
A
ITSM
50 Hz 8000
60 Hz 8380
I2t50 Hz 320 kA2s
60 Hz 292
VDRM/VRRM 400 to 2000 V
tqTypical 100 μs
TJ-40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
VS-ST300S
04 400 500
50
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
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VS-ST300SPbF Series
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Revision: 27-Sep-17 2Document Number: 94406
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV)
180° conduction, half sine wave 300 A
75 °C
Maximum RMS on-state current IT(RMS) DC at 64 °C case temperature 470
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
8000
t = 8.3 ms 8380
t = 10 ms 100 % VRRM
reapplied
6730
t = 8.3 ms 7040
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
320
kA2s
t = 8.3 ms 292
t = 10 ms 100 % VRRM
reapplied
226
t = 8.3 ms 207
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 3200 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.97 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.98
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.74 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.73
Maximum on-state voltage VTM Ipk = 940 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.66 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/μs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
μs
Typical turn-off time tqITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA
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Revision: 27-Sep-17 3Document Number: 94406
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Note
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp 5 ms 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = -40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200 -
mATJ = 25 °C 100 200
TJ = 125 °C 50 -
DC gate voltage required to trigger VGT
TJ = -40 °C 2.5 -
VTJ = 25 °C 1.8 3
TJ = 125 °C 1.1 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance, junction to case RthJC DC operation 0.10 K/W
Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.03
Mounting torque, ± 10 % Non-lubricated threads 48.5
(425)
N · m
(lbf · in)
Approximate weight 535 g
Case style See dimensions - link at the end of datasheet TO-118 (TO-209AE)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.011 0.008
TJ = TJ maximum K/W
120° 0.013 0.014
90° 0.017 0.018
60° 0.025 0.026
30° 0.041 0.042
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VS-ST300SPbF Series
www.vishay.com Vishay Semiconductors
Revision: 27-Sep-17 4Document Number: 94406
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
Maximum Allowable Case Temperature (°C)
30° 60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
ST3 0 0 S Se r i e s
R (DC) = 0.10 K/ W
thJC
60
70
80
90
100
110
120
130
0100200300400500
DC
30° 60°
90°
120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
ST3 0 0 S Se r i e s
R (DC) = 0.10 K/ W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
0.08K
/W
0.2K
/W
0.3K
/W
0.4K
/W
0.6K
/W
1.2K/W
R=0.03K
/W-DeltaR
thS
A
0.12K
/W
0
40
80
120
160
200
240
280
320
360
400
440
480
04080120160200240280320
180°
120°
90°
60°
30°
RM S Li m it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST300S Series
T = 125°C
J
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R = 0 . 0 3 K/ W-DeltaR
thS
A
0.08K
/W
0.12K
/W
0.2K/W
0.3K
/W
0.6K
/W
1.2K
/W
0
50
100
150
200
250
300
350
400
450
500
550
600
650
0
100 200 300 400 500
DC
180°
120°
90°
60°
30°
RM S Lim it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST300S Se ries
T = 125°C
J
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VS-ST300SPbF Series
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Revision: 27-Sep-17 5Document Number: 94406
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
110100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Pe a k Ha lf Sine Wave On-state Current (A)
ST3 0 0 S Se r i e s
Init ia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
0.01 0.1 1
Pulse Tra in Dura t io n ( s)
Versus Pulse Train Duration. Control
Peak Half Sine Wave On-state Current (A)
ST300S Series
Initia l T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
100
1000
10000
0123456789
T = 25 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 1 25 ° C
J
ST3 0 0 S Se r i e s
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e Wa v e Pu l se D u r a t i o n ( s)
thJC
ST3 0 0 S Se r i e s
Transient Thermal Impedanc e Z (K/ W)
Steady State Value
R = 0 . 1 0 K/ W
(DC Operation)
thJC
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Revision: 27-Sep-17 6Document Number: 94406
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95084
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 12 5 ° C
Tj = - 4 0 ° C
(2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Fre q u e n c y Li m i t e d b y PG ( A V )
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
Device: ST300S Series
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(4)
- Thyristor
1- Vishay Semiconductors product
2
- Essential part number
3
- 0 = Converter grade
4
- S = Compression bonding stud
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
- P = stud base 3/4" 16UNF-2A threads
7
- 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
M = stud base metric threads (M24 x 1.5)
3 = Threaded top terminal 3/8" 24UNF-2A
9
10 - None = Standard production
- PbF = Lead (Pb)-free
8
- Critical dV/dt: None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9 10
STVS- 30 0 S 20 P 0 - PbF
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Revision: 02-Aug-07 1
TO-209AE (TO-118)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS - TO-209AE (TO-118) in millimeters (inches)
Note
(1) For metric device: M24 x 1.5 - length screw 21 (0.83) maximum
DIMENSIONS - TO-209AE (TO-118) WITH TOP THREAD TERMINAL 3/8" in millimeters (inches)
Note
(1) For metric device: M24 x 1.5 - length screw 21 (0.83) maximum
47 (1.85)
MAX.
27.5 (1.08)
MAX. 77.5 (3.05)
80.5 (3.17)
38 (1.5) DIA. MAX.
Ceramic housing
SW 45
21 (0.83) MAX.
3/4"-16UNF-2A (1)
25 (0.98)
3/8"-24UNF-2A
17 (0.67) DIA.
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Revision: 08-Feb-17 1Document Number: 91000
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