BAT85S Datasheet by Vishay Semiconductor Diodes Division

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BAT85S
www.vishay.com Vishay Semiconductors
Rev. 1.9, 02-Jun-17 1Document Number: 85513
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
Integrated protection ring against static
discharge
Very low forward voltage
AEC-Q101 qualified
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Applications where a very low forward voltage is required
MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAT85S BAT85S-TR or BAT85S-TAP Single BAT85S Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR30 V
Peak forward surge current tp 10 ms IFSM 5A
Repetitive peak forward current tp < 1 s IFRM 300 mA
Forward continuous current IF200 mA
Average forward current PCB mounting, I = 4 mm;
VRWM = 25 V, Tamb = 50 °C IFAV 200 mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air I = 4 mm, TL = constant RthJA 350 K/W
Junction temperature Tj125 °C
Storage temperature range Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 0.1 mA VF240 mV
IF = 1 mA VF320 mV
IF = 10 mA VF400 mV
IF = 30 mA VF500 mV
IF = 100 mA VF800 mV
Reserve current VR = 25 V IRA
Diode capacitance VR = 1 V, f = 1 MHz CD10 pF
Reserve recovery time IF = 10 mA to IR = 10 mA to iR = 1 mA trr 5ns
VISHAY. DwodesAmencasw/wshayxom DwodesAswaviwshaywm DwodesEuvogemusnauom www.v\shay,com/doc?91000
BAT85S
www.vishay.com Vishay Semiconductors
Rev. 1.9, 02-Jun-17 2Document Number: 85513
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Maximum Reverse Power Dissipation vs.
Junction Temperature
Fig. 2 - Reverse Current vs. Junction Temperature
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
0
20
40
60
80
100
120
140
160
180
200
25 50 75 100 125 150
Tj - Junction Temperature (°C)
15822
VR = 30 V
PR - Reverse Power Dissipation (mW)
RthJA = 540 kW
PR - Limit
at 100 % VR
PR - Limit
at 80 % VR
1
10
100
1000
25 50 75 100 125 150
15823
VR = VRRM
IR - Reverse Current (µA)
Tj - Junction Temperature (°C)
0 0.5 1.0 1.5
15824
0.1
1
10
100
1000
Tj = 125 °C
IF - Forward Current (mA)
VF - Forward Voltage (V)
Tj = 25 °C
0
1
2
3
4
5
6
7
8
9
10
0.1 1 10 100
15825
f = 1 MHz
VR - Reverse Voltage (V)
CD - Diode Capacitance (pF)
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identification
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
— VISHAY. V
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Revision: 08-Feb-17 1Document Number: 91000
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