1N914 Datasheet by Vishay Semiconductor Diodes Division

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VISHAY. www.vi5hay.com/doc?99912 DESIGN SUPPORT TOOLS click ‘090 to get started SD ls me ® RDHS comma HALOGEN FREE DwodesAmencasw/wshayxom DwodesAswaviwshaywm DwodesEuvogemusnauom www.v\shay,com/doc?91000
1N914
www.vishay.com Vishay Semiconductors
Rev. 1.9, 07-Jul-17 1Document Number: 85622
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diodes
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
Fast switching speed
High reliability
High conductance
For general purpose switching applications
AEC-Q101 qualified
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
Models
PARTS TABLE
PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS
1N914 1N914TR or 1N914TAP 1N914 Single Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 100 V
Working peak reverse voltage VRWM 75 V
DC blocking voltage VR75 V
RMS Reverse voltage VR(RMS) 53 V
Forward continuous current IF300 mA
Average rectified current Half wave rectification with
resistive load and f > 50 MHz IF(AV) 200 mA
Non repetitive peak forward surge current t = 1 s IFSM 1A
t = 1 μs IFSM 4A
Power dissipation l = 4 mm, TL = 25 °C Ptot 500 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 300 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg -65 to +175 °C
VISHAY. 1 000 DwodesAmencasmwshaywm DwodesAswa@wshay,com DwodesEuvogemusnauom www.v\shay,com/doc?91000
1N914
www.vishay.com Vishay Semiconductors
Rev. 1.9, 07-Jul-17 2Document Number: 85622
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Reverse Current vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 10 mA VF1V
Breakdown voltage IR = 100 μA V(BR) 100 V
Peak reverse current
VR = 75 V IRA
VR = 20 V, Tj = 150 °C IR50 μA
VR = 20 V IR25 nA
Diode capacitance VR = 0, f = 1 MHz CD4pF
Reverse recovery time IF = 10 mA, iR = 1 mA,
VR = 6 V, RL = 100 Ωtrr 4ns
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V
F - Forward Voltage (V)
2.0
94 9170_1
Scattering Limit
T = 25 °C
j
1N914
1
10
100
1000
I
R
- Reverse Current (nA)
V
R
- Reverse Voltage (V)
10 1 100
94 9098
T
j
= 25 °C
Scattering Limit
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identification
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
— VISHAY. V
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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